Curriculum Vitae
Date: March 20th 2015
Personal Information
Name: Yijin Zhang
Sex: Male
Date of Birth: February 13 th, 1989
Nationality: China
Home Address: #1002, 1-8-11, Mukougaoka, Bunkyo-ku, Tokyo-to, 113-0023
Office Address: #309, Faculty of Engineering Bldg. 8, The University of Tokyo.
1-8-11, Hongo, Bunkyo-ku, Tokyo-to, 113-0023
Phone Number: 03-5841-6822
Mobile Phone: 090-6850-4875
E-mail: [email protected]
Education
April, 1995 – March, 2001
Sendai Kunimi Elementary School, Miyagi-ken
April, 2001 – March, 2004
Sendai dai-ichi Junior High School, Miyagi-ken
April, 2004 – March, 2007
Sendai dai-ni High School, Miyagi-ken
April, 2007 – March, 2011
The University of Tokyo, Tokyo-to (undergraduate)
April, 2011 – March, 2013
The University of Tokyo, (master course)
April, 2013 – now
The University of Tokyo, (PhD course)
April, 2014 – July, 2014
Massachusetts Institute of Technology, MA
Degrees
2011. Bachelor of engineering, School of Engineering, The University of Tokyo.
2013. Master of engineering, School of Engineering, The University of Tokyo.
Research activities
 Physics of low dimensional materials (transport measurement at low temperature and
under magnetic field)
 Transistors based on transition-metal dichalcogenides (material growth by CVT,
mechanical exfoliation, micro fabrication, and measurements)
 Electric double layer transistor (transistor device fabrication and measurement using liquid
gate dielectrics, gate control of electronic phases)
 Optical measurement (Raman spectroscopy and polarization-resolved photoluminescence)
Experimental skills
 Familiar with single crystal growth of MoS2 and WSe2 by chemical vapour transport
(CVT).
 Familiar with mechanical exfoliation, electron-beam lithography, and vacuum deposition
of metals.
 Expert of EDLT technique.
 Modification of commercial Raman spectroscopy system for micro PL measurement.
 Making a program for transport measurements (automatic control of temperature, magnetic
field, chamber atmosphere, and voltages) with either LabView or Agilent VEE.
Awards / Honours
1. Poster award, 1st International Workshop on Topological Electronics (Topotronics2015),
2015
2. Research Fellowship for Yong Scientists, Japan Society for the Promotion of Science
(JSPS), 2013 – now
3. Best poster award, Annual Research Meeting of Cryogenic Research Center of The
University of Tokyo, 2012
4. Scholarship from “Leading Graduate School Doctoral Program”, JSPS and Ministry of
Education, Culture, Sports, Science and Technology”, 2012 – now
List of Publications
1. M. Yoshida, Y. J. Zhang, J. T. Ye, R. Suzuki, Y. Imai, S. Kimura, A. Fujiwara, and Y.
Iwasa.
“Controlling charge-density-wave states in nano-thick crystals of 1T-TaS2.”
Sci. Rep. 4, 7302 (2014).
2. R. Suzuki, M. Sakano, Y. J. Zhang, R. Akashi, D. Morikawa, A. Harasawa, K. Yaji, K.
Kuroda, K. Miyamoto, T. Okuda, K. Ishizaka, R. Arita, and Y. Iwasa.
“Valley-dependent spin polarization in bulk MoS 2 with broken inversion symmetry”
Nat. Nanotechnol. 9, 611-617 (2014).
3. Y. J. Zhang, T. Oka, R. Suzuki, J. T. Ye, and Y. Iwasa.
“Electrically switchable chiral light-emitting transistor”
Science 344, 725-728 (2014).
4. Y. J. Zhang, J. T. Ye, Y. Yomogida, T. Takenobu, and Y. Iwasa.
“Formation of a Stable p-n Junction in a Liquid-Gated MoS 2 Ambipolar Transistor”
Nano Lett. 13, 3023-3028 (2013).
5. J. Pu, Y. J. Zhang, Y. Wada, J. Wang, L. Li, Y. Iwasa, and T. Takenobu.
“Fabrication of stretchable MoS 2 thin-film transistors using elastic ion-gel gate
dielectrics”
Appl. Phys. Lett. 103, 23505 (2013).
6. J. T. Ye, Y. J. Zhang, Y. Kasahara, and Y. Iwasa.
“Interface transport properties in ion-gated nano-sheets”
Eur. Phys. J. Special Topics 222, 1185-1201 (2013).
7. J. T. Ye, Y. J. Zhang, R. Akashi, M. S. Bahramy, R. Arita, and Y. Iwasa.
“Superconducting Dome in a Gate-Tuned Band Insulator”
Science, 338, 1193-1196 (2012).
8. J. T. Ye, Y. J. Zhang, Y. Matsuhashi, M. F. Craciun, S. Russo, Y. Kasahara, A. F.
Morpurgo, and Y. Iwasa.
“Gate-induced superconductivity in layered-material-based electric double layer
transistors”
J. Phys.: Conf. Ser. 400, 022139 (2012).
9. Y. J. Zhang, J. T. Ye, Y. Matsuhashi, and Y. Iwasa.
“Ambipolar MoS 2 Thin Flake Transistors”
Nano Lett. 12, 1136-1140 (2012).
<Invited>
1. Y. J. Zhang and Y. Iwasa.
“Two-dimensional Crystals of Transition Metal Dichalcogenides
–From
Superconductivity to Circularly Polarized Light Source–”
Butsuri (Membership Journal of The Physical Society of Japan”. 69, 771 (2014).
Invited Presentations
2014 Dec. 16
“Spin and valley pseudo-spin in transition-metal dichalcogenides”
The 19th Physics and Applications of Spin-related Phenomena in
Semiconductors (PASPS-19), University of Tokyo, Tokyo, Japan
2014 Sep. 2
“Electronic and optical properties of Transition-Metal Dichalcogenides”
State Key Laboratory of Precision Spectroscopy, East China Normal University,
Shanghai, China
2012 Sep. 9
“Ambipolar Transport and Field Effect Superconductivity in MoS2”
EDLT Tokyo, University of Tokyo, Tokyo, Japan
Conference Presentations (Oral)
1. ○M. Yoshida, Y. J. Zhang, R. Suzuki, J. T. Ye, Y. Iwasa.
“Controlling non-equilibrium CDW states in 1T-TaS2 nano-thick crystals”
APS March Meeting, San Antonio, TX, US, 2015
2. ○W. Shi, J. T. Ye, Y. J. Zhang, R. Suzuki, M. Yoshida, N. Inoue, Y. Saito, Y. Iwasa.
“Superconductivity series of ion-gated transition metal dichalcogenides”
APS March Meeting, San Antonio, TX, US, 2015
3. ○Y. J. Zhang, M. Onga, and Y. Iwasa.
“Circularly polarized luminescence from lateral TMD p-i-n junctions”
The 48th Fullerenes-Nanotubes-Graphene General Symposium, Tokyo, Japan, 2015
4. ○Y. J. Zhang, R. Suzuki, and Y. Iwasa.
“Ambipolar light emitting transistors on transition-metal dichalcogenides”
APS March Meeting, Denver, CO, US, 2014
5. ○W. Shi, J. T. Ye, Y. J. Zhang, et al.
“Ambipolar transport and gate-induced superconductivity in layered transition metal
dichalcogenides”
APS March Meeting, Denver, CO, US, 2014
6. ○R. Suzuki, Y. J. Zhang, Y. Iwasa, et al.
“Enhanced valley polarization in 3R-MoS2”
APS March Meeting, Denver, CO, US, 2014
7. ○M. Sakano, R. Suzuki, Y. J. Zhang, et al.
“Observation of out-of-plane spin-polarization in bulk 3R-MoS2”
APS March Meeting, Denver, CO, US, 2014
8. ○Y. Saito, J. T. Ye, Y. J. Zhang, et al.
“Two dimensionality in electric field induced superconductivity”
APS March Meeting, Denver, CO, US, 2014
9. Y. J. Zhang, ○J. T. Ye, Y. Iwasa.
“Field induced superconductivity in MoS 2”
MRS Spring Meeting, San Francisco, CA, US, 2013
10. ○Y. J. Zhang, J. T. Ye, Y. Iwasa.
“Liquid-Gated Ambipolar Transistor with Transition-Metal Dichalcogenides”
APS March Meeting, Baltimore, MD, US, 2013
Conference Presentations (Poster)
1. ○Y. J. Zhang, M. Onga, R. Suzuki, and Y. Iwasa
“Chiral electroluminescence from 2D materials based transistors”
1st International Workshop on Topological Electronics (Topotronics2015), Okinawa, Japan,
2015
* Poster award
2. ○Y. J. Zhang, T. Oka, R. Suzuki, J. T. Ye, and Y. Iwasa.
“Electrically switchable chiral light-emitting transistor”
FET2014, Kashiwa, Japan, 2014
3. Y. J. Zhang, ○J. T. Ye, R. Suzuki, A. Mori, Y. Saito, and Y. Iwasa.
“Electric control of spin and valley polarization in WSe2”
QS2C Theory Forum, Tokyo, Japan, 2013
4. ○Y. J. Zhang, J. T. Ye, and Y. Iwasa.
“Electric double layer transistor based on MoS2”
Annual Research Meeting of Cryogenic Research Center of The University of Tokyo, Tokyo,
Japan, 2012
* Best poster award