KAUST-IEMN WORKSHOP ON NANOTECHNOLOGY & PHOTONICS KAUST, Thuwal, Saudi Arabia May 6th, 2015 1 KAUST-IEMN WORKSHOP ON NANOTECHNOLOGY & PHOTONICS King Abdullah University of Science & Technology (KAUST) Thuwal, Saudi Arabia May 6th, 2015 (Wednesday) Venue: Building 3 (Ibn Sina West, Redsea view), 5th floor, room 5220 Sponsors: King Abdullah University of Science & Technology (KAUST), KSA King Abdulaziz City for Science and Technology (KACST), KSA University of Valenciennes (UVHC), France Institute of Electronics Microelectronics & Nanotechnology (IEMN), France Objective: The objective of the joint KAUST-IEMN/UVHC workshop is to provide a forum for interaction between the leading scientists who are at the cutting edge of nanotechnology and photonics, and the faculty at KAUST and other institutions in the Kingdom of Saudi Arabia. The workshop is supported in part by KAUST and IEMN/UVHC Schedule: Breakfast 9:00-9:30am Session 1 (09:30 am – 11:00 am) Chair: Prof. Boon S. Ooi (KAUST) (9:30-10:00am) Semiconductor laser and LED research at KAUST, Prof. Boon S. Ooi (KAUST) (10-10:30am) Application of Nitride-based Semiconductors to High-speed Optoelectronics, Prof. Elhadj Dogheche (IEMN) (10:30-11:00) Semiconductor Nanowires for Optoelectronics Device Applications, Prof. Chennupati Jagadish (ANU) Break and lunch (11:00 am – 01:30 pm) Session 2 (01:30 pm – 3:10 pm) Chair: Prof. Elhadj Dogheche (IEMN) (1:30–2:10pm) High Frequency Electrical Characterization in Nano-electronics, Prof. Tuami Lasri (IEMN) (2:10–2:40pm) Magneto Transport Properties of Three-dimensional Flexible and Conductive Interconnected Graphene Networks, Prof. Xixiang Zhang (KAUST) (2:40–3:10pm) Electrical Modes of Scanning Probe Microscopy for Charge Dynamics at the Nanoscale - from static toward THz, Dr. Heinrich Diesinger (IEMN) Break (3:10-3:30pm) Session 3 (3:30-5:00pm) Chair: Assistant Prof. Osman Bakr (KAUST) (3:30-4:00pm) Perovskite Materials and their applications, Assistant Prof. Osman Bakr (KAUST) (4:00-4:30pm) Nanocomposites of Reduced Graphene Oxide: Preparation, Characterization and Applications, Dr. Rabah Boukherroub (IEMN) (4:30-5:00pm) Photon Managements by Employing Nanostructures for Optoelectronics Devices, Assoc. Prof. Jr-Hau He (KAUST) Semiconductor Laser and LED Research at KAUST Boon S. Ooi Photonics Laboratory,Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia [email protected] The photonics laboratory at KAUST aims at delivering compact and energy saving integrated laser-diode based devices and solutions for applications requiring light spanning the ultra-violet to visible and nearinfrared regime. A plethora of practical laser-based solutions were conceived, and proof-of-concept models were built for data collection and testing of new class of innovative multi-function laser devices. The research into laser device physics and group III-V nanostructure for eventual lasing applications further enable practical solutions to be applied to exiting issues related to energy, water and food. The laboratory has thus far embarked upon innovative lasers for solid-state lighting, broadband optical telecommunication, and laser based horticulture applications. The in-house laser-diode and related characterization knowhow, molecular beam epitaxy growth capability, and advanced fabrication technique further fuel the innovative and creative activities within the laboratory, and collaboration within KAUST, in-kingdom universities as well as international partners. Professor Ooi's research is primarily concerned with the study of semiconductor lasers and photonic integrated circuits. Specifically, he has contributed significantly to the development of practical technologies for semiconductor photonics integrated circuits, and the development of novel broadband semiconductor lasers, multiple-wavelength lasers and superluminescent diodes. Most recently, he focuses his research on the areas of GaN-based nanostructures and lasers for applications such as solid-state lighting and visible light communications. Boon is the principal investigator for the photonics laboratory, and director for KACST Technology Innovation Center for Solid State Lighting at KAUST. 3 Application of Nitride based Semiconductors to High-speed Optoelectronics Bandar AlShehri, Karim Dogheche and Elhadj Dogheche Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), Cité Scientifique, Avenue Poincaré, CS 60069, 59652 Villeneuve d’Ascq, France [email protected] III-nitrides materials are very promising ternary alloy system that receives a lot of attentions thanks to theirs tunable bandgap that varies from near infrared to near ultraviolet regions. Until now, InGaN/GaN materials have been widely used in various applications like high efficiency solar cells, high-brightness blue to green LED as well as non-phosphor based direct white light generation. Their unique set of properties (optical index, electrooptic & piezoelectric effects) makes them suitable candidates for a number of potential optoelectronic applications as well for modulation, high speed switching, optical interconnection required for future full optical fiber links. In order to design efficient GaN-based active devices, it is a prerequisite to fully characterize the optical properties of IIInitrides materials. In this research, we report the optical indices and the losses of InxGa1-xN films grown by MOCVD. We report experimental results on a field effect refractive index change into gallium nitride structures using surface Plasmon. In order to understand the origin of the index modulation, we conducted a TEM analysis and discussed the influence of threading dislocations density. We discuss the design and the fabrication process of InGaN-based ultrafast devices. Keywords: Indium gallium nitride, refractive index, electrooptic effects, surface plasmon, high-speed optoelectronics Dr Elhadj Dogheche is Professor at the University of Valenciennes and Hainaut-Cambrèsis. He received his Ph.D. degree in Electrical Engineering from the University of Sciences & Technology in 1993 at Lille. His research interests at the Institute of Electronic, Microelectronic & Nanotechnology (IEMN CNRS), are in the area of III-nitride materials and nanostructures. The applications are more focused in high-speed optoelectronics and active photonic devices such as guided-wave, plasmonics and optical interconnections. He is a co-author of 80+ research publications and he has 2 patents or patents pending. He has established international collaborations with different institutes and Universities in Europe, USA, Korea, Singapore, Indonesia, China, Saudi Arabia and Algeria. Semiconductor Nanowires for Optoelectronics and Energy Applications Chennupati Jagadish, FAA, FTSE Research School of Physics and Engineering The Australian National University Canberra, ACT0200, Australia [email protected] Semiconductors have played an important role in the development of information and communications technology, solar cells, solid state lighting. Nanowires are considered as building blocks for the next generation electronics and optoelectronics. In this talk, I will introduce the importance of nanowires and their potential applications and discuss about how these nanowires can be synthesized and how the shape, size and composition of the nanowires influence their structural and optical properties. I will present results on axial and radial heterostructures and how one can engineer the optical properties to obtain high performance optoelectronic devices such as lasers, THz detectors, solar cells. Future prospects of the semiconductor nanowires will be discussed. Professor Jagadish is an Australian Laureate Fellow, Distinguished Professor and Head of Semiconductor Optoelectronics and Nanotechnology Group in the Research School of Physics and Engineering, Australian National University. He is also serving as Vice-President and Secretary Physical Science of the Australian Academy of Science. Prof. Jagadish is an Editor/Associate editor of 6 Journals, 3 book series and serves on editorial boards of 17 other journals. He has published more than 810 research papers (540 journal papers), holds 5 US patents, co-authored a book, co-edited 5 books and edited 12 conference proceedings and 15 special issues of Journals. He won the 2000 IEEE Millennium Medal and received Distinguished Lecturer awards from IEEE NTC, IEEE LEOS and IEEE EDS. He is a Fellow of the Australian Academy of Science, Australian Academy of Technological Sciences and Engineering, IEEE, APS, MRS, OSA, AVS, ECS, SPIE, AAAS, IoP (UK), IET (UK), IoN (UK) and the AIP. He received Peter Baume Award from the ANU in 2006, the Quantum Device Award from ISCS in 2010, IEEE Photonics Society Distinguished Service Award in 2010, IEEE Nanotechnology Council Distinguished Service Award in 2011 and Electronics and Photonics Division Award of the Electrochemical Society in 2012, 2013 Walter Boas Medal and 2015 IEEE Pioneer Award in Nanotechnology. 5 High Frequency Electrical Characterization in Nano-electronics A. El Fellahi, J. Marzouk, K. Haddadi, S. Arscott, C. Boyaval, G. Dambrine and T. Lasri Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), Université Lille1, Avenue Poincaré, CS 60069, 59652 Villeneuve d’Ascq, France [email protected] In the perspective of compliance with the timeline of nanoelectronic technologies, that assumes the continuation of downscaling laws and performance increase, bottlenecks are still to be overcome. Indeed, nanoelectronics and future silicon technologies are carriers of new measurement challenges especially in high frequency electronics. In particular, microwave characterization of nanodevices (nanotubes, nanowires, atto Farad capacitance,…) is still demanding research efforts to respond to the new requirements imposed in terms of spatial resolution and frequency range. Two major issues when considering this kind of measurement are the scale mismatch and the electrical impedance mismatch between the probe and the device to be measured. Actually, the nanometer sizes of devices do not match those of the conventional measurement instruments. In particular, because of the pitch of the HF probes (between 50 and 100µm), the devices have to be inserted into specific test fixtures leading to large scale discontinuity and inaccurate results. The second challenge is related to the difference between the impedance value of nanometer devices that is very high and the 50 Ohm impedance of the commercial measurement systems (ie. Vector Network Analyzers). This impedance mismatch makes such conventional measurement instrument practically unusable for the measurement of such devices. At IEMN, solutions are being developed to bring answers to these important challenges. These studies are conducted in the framework of Excelsior (Experimental CEnter for Large Spectrum prOpeRties of nanostructures from DC to Mid-Infrared) project. Efforts are made to develop a new generation of on-wafer probing instrumentation dedicated to HF characterization of nano-devices. T. Lasri received the Ph.D. degree in electronic from the University of Lille 1 in 1992. Since 2002 he has been Professor of Electronics and Electrical Engineering in the University of Lille 1. His main research interests, in the Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), encompass the development of measurement techniques, and the conception and realization of systems for microwave and millimeter wave Non Destructive Evaluation (NDE) purposes including the characterization of nano-devices. Another interest is in the area of energy with the development of microgenerators based on thermoelectric transduction. He is author or co-author of about 100 publications and communications. Magneto Transport Properties of Three-Dimensional Flexible and Conductive Interconnected Graphene Networks Q. Zhang1, P. Li1, Xin He1, W.C. Ren2. H.M. Cheng2 and X.X. Zhang1 1 Physical Sciences and Engineering, King Abdullah University of Science and Technology, 23955-6900, Thuwal, Saudi Arabia. 2 Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China. [email protected] A new type of graphene material, three-dimensional flexible and conductive interconnected graphene networks (graphene foam) has been synthesized using chemical vapor deposition with Ni foam as a template [1]. This material exhibit interesting properties and has found a number a applications, such as, flexible lithium ion batteries with ultrafast charge and discharge rates [2], electromagnetic interference (EMI) shielding materials [3]. In this work we present the study of magneto-transport properties of the threedimensional flexible and conductive interconnected graphene networks. The temperature dependent resistivity of the graphene networks of dimension of 1x3x10 mm was measured with four probe techniques in the temperature range of 1.8 K to 300 K. With decreasing temperature from 300K, the resistance increases monotonically till a maximum at 23 K, in which resistance increased about 50%. With further decreasing temperature form 23K to 1.8K, the resistance decreases linearly. The magnetoresistance (MR) as a function of applied magnetic field was measured in different configurations: a) magnetic field being perpendicular to both the foam plane and the current; b) magnetic field being parallel the foam plane and the current; and c) magnetic field being perpendicular to the current, but angle between the magnetic field and normal direction of the foam plane being changed. As large as 300% of magnetoresistance was observed in two both configurations of (a) and (b). More importantly, the observed MR is not only very large, but also nearly temperature independent over the whole temperature range. The characteristic of the MR qualifies the graphene foam as a potential material candidate for the field sensors operating in both wide temperature range and with magnetic field range. Another very interesting observation is that an anisotropic MR was observed in the third configuration, which was not expected for three dimensional nature of the material. All the above observation indicates that this novel material opens a wide possibility not only for applications but also for the fundamental research. References: (1) Z.P. Chen,W.C. Ren, L.B. Gao, B.L. Liu, S. F. Pei and H. M. Cheng, Nature Materials 10, 424 (2011). (2) N. Lia, Z. P. Chen, W.C. Ren, F. Li and H. M. Cheng PNAS 109, 17360–17365 (2012). (3) Z. P. Chen , C. Xu , C.Q. Ma , W. C. Ren and H.M. Cheng Adv. Mater. 2013, 25, 1296–1300 (2013). Dr. Xixiang Zhang is currently a professor in the Divison of Physical Sciences and Engineering at King Abdullah University of Science and Technology (KAUST). He was the director of core labs at KAUST before he became a faculty member. Previously, Dr. Zhang served as the funding manager of the Advanced Nanofabrication, Imaging & characterization (ANIC) core labs from September 2008. Before joining KAUST in September 2008, he served as faculty member for 11 years in Physics Department at Hong Kong University of Science and Technology (HKUST). Dr. Zhang obtained his Ph.D from Universitat de Barcelona. Xixiang Zhang has co-authored more than 350 publications. The number of total citation of these papers (Web of Science) is larger than 12400 with h-index 56. The number of citation after excluding the self citation is larger than 11900. He also holds more than 15 patents. His research interests include magnetism, magnetic materials, Spintronics and Nano materials. 7 Electrical modes of Scanning Probe Microscopy for Charge Dynamics at the Nanoscale - from Static Toward THz Heinrich Diesinger Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), Cité Scientifique, Avenue Poincaré, CS 60069, 59652 Villeneuve d’Ascq, France [email protected] The development of electrical AFM based characterization techniques, conducting (c-AFM), electric force microscopy (EFM) and Kelvin force microscopy (KFM) will be presented along with their applications at IEMN. Examples of static measurement include force-current measurements on colloidal nanoparticle arrays and 4-probe sheet resistance on silicone. The dynamic aspect is then first addressed in a fundamental study of KFM noise-bandwidth behavior, aiming at the best performance in terms of acquisition/accuracy tradeoff that can be directly related to the parameters of the used oscillating sensor. Different widespread sensors are compared with respect to their KFM performance. Finally, the development of KFM combined with optical pump-probe spectroscopy is presented. The scanning probe component adds nanoscale resolution to ultrafast all-optical spectroscopic approaches. The method is complimentary to the pump-probe STM developed by the Shigekawa group [1] by using a different detection mechanism. Its intended use is the study of charge dynamics in nanostructured materials and devices. It obviously addresses the morphology problem of photovoltaic (absorption depth vs charge extraction), and may play a major role in photovoltaic devices based on charge multiplication or multiple exciton generation. [1] S. Yoshida, Y. Terada, M. Yokota, O. Takeuchi, H. Oigawa, H. Shigekawa. Optical pump-probe scanning tunneling microscopy for probing ultrafast dynamics on the nanoscale. The European Physical Journal, 222, 2013 . Dr. Heinrich Diesinger is a CNRS Senior Scientist at the Institute of Electronics, Microelectronics and Nanotechnology (IEMN), Unversity Lille1, France. His research interests are in the area of electrical modes of Near Field Microscopy using high-frequency probes (KFM/STM/EFM), application in liquid environment; combination of ultrashort spectroscopy with near field microscopy; organic semiconductors. He is a co-author of 40+ research publications in subjects related to nanotechnology, Kelvin Probe Force Microscopy imaging and spectroscopy. He has developed number of collaborations with Singapore where he was adjunct senior researcher in 2011-2013 at the joint International Center “Cintra” with Thales, CNRS & NTU. Perovskite Materials and Their Applications Osman Bakr Physical Sciences and Engineering, King Abdullah University of Science and Technology, 23955-6900, Thuwal, Saudi Arabia. [email protected] Along with the rapid progress in power conversion efficiency of perovskite solar cells, the key materialsbased aspects behind the photovoltaic superiority of organolead trihalide perovskites are being vigorously pursued. However, the fundamental properties, and ultimate performance limits, of organolead trihalide MAPbX3 (MA = CH3NH3+; X = Br–, or I–) perovskites remain obscured by extensive disorder in polycrystalline MAPbX3 films. We report an antisolvent vapor-assisted crystallization (AVC) approach that enables us to create sizable crack-free MAPbX3 single crystals with volumes exceeding 100 cubic millimeters. These large single crystals enabled a detailed characterization of their optical and charge transport characteristics. We observed exceptionally low trap-state densities of order 109 to 1010 per cubic centimeter MAPbX3 single crystals (comparable to the best photovoltaic-quality silicon), which is ~ 7-orderof-magnetitude lower than nanocrystalline perovskite thin films. The low trap-state density leads to both superior photophysical and transport charachteristics of the MAPbX3 single crystals over nanocrystalline thin films. Exceptionally long photoluminescence (PL) lifetime, up to a microsecond time scale, and high charge-carrier mobility, up to a hundred cm2/Vs. was obtained in MAPbX3 single crystals. Charge-carrier diffusion lengths exceeding 10 μm in MAPbX3 single crystals were calculated based on the measured PL lifetime and charge-carrier mobility. By revealing the intrinsic properties of hybrid halide perovskites – here shown to be comparable to the best optoelectronic grade semiconductors – and conditions for their highquality growth, this study demonstrates that perovskite photovoltaics stand to see further breakthroughs through substantial improvement in material purity. The emergence of these intrinsically high-quality materials suggests new avenues to deploy hybrid perovskites in an even wider range of semiconductor and optoelectronic devices. Osman M. Bakr is an Assistant Professor of Materials Science and Engineering, SABIC Presidential Career Development Chair, at King Abdullah University of Science and Technology (KAUST), Saudi Arabia. He holds a B.Sc. in Materials Science and Engineering from MIT (2003) as well as a M.S. and Ph.D. in Applied Physics from Harvard University (2009). He was a post-doctoral fellow in the Laboratory for Nanoscale Optics at Harvard University. In 2010 he moved to KAUST and founded the Functional Nanomaterials Lab, a research group dedicated towards the study of nanoparticles and hybrid nanomaterials; particularly advancing their synthesis and self-assembly for applications in photovoltaics, optoelectoronics, and photocatalysis. 9 Nanocomposites of Reduced Graphene Oxide: Preparation, Characterization and Applications Rabah Boukherroub Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), Cité Scientifique, Avenue Poincaré, CS 60069, 59652 Villeneuve d’Ascq, France [email protected] Recent developments in materials science and nanotechnology have propelled the development of a plethora of materials with unique chemical and physical properties for various applications. Graphitic nanomaterials such as carbon nanotubes, fullerenes and, more recently, graphene oxide (GO) and reduced graphene oxide (rGO), have gained a great deal of interest for their potential applications in various aspects of science and technology. Graphene, the name specified to a one atom-thick two-dimensional (2D) single layer of sp2 hybridized carbon atoms arranged in a honeycombed lattice with large surface area and exceptional thermal, mechanical, optical and structural properties. This wonder material is a “hot topic” of research in interdisciplinary sciences with potential applications in several fields such as nano-electronics, organic catalysis, environmental remediation, drug delivery, etc. Due to its low cost of production, large specific surface area and abundant surface chemistry, reduced graphene oxide (rGO) has shown great promise in the development of novel composites, biosensors and catalysts. The last decade has witnessed an increasing interest for the preparation of graphene-based hybrid nanomaterials, which offer unusual combinations of electrical, thermal, mechanical, catalytic, and optical and magnetic performances that are difficult to attain separately from the individual components. In this presentation, I will focus on the different strategies for the preparation of rGO-based hybrid materials and the various applications of these nanohybrids in biomedicine, biosensing and photocatalysis. Dr Rabah Boukherroub is a CNRS research director at the Institute of Electronics, Microelectronics and Nanotechnology (IEMN), University Lille1, France. His research interests are in the area of functional materials, surface chemistry, and photo-physics of semiconductor/metal nanostructures with emphasis on biosensors and lab-on-chip applications, and development of new tools for studying molecular dynamics in vivo. He is a co-author of 320+ research publications and wrote 25 book chapters in subjects related to nanotechnology, materials chemistry, and biosensors. He has 8 patents or patents pending. Photon Managements for Optoelectronic Devices Jr-Hau He Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia [email protected] It is of current interest to develop the photon management with nanostructures since the ability to suppress the reflection and light trapping over a broad range of wavelengths and incident angles plays an important role in the performance of optoelectronic devices, such as photodetectors, light-emitting diodes, optical components, or photovoltaic systems. Superior light-trapping characteristics of nanowires, including polarization-insensitivity, omnidirectionality, and broadband working ranges are demonstrated in this study. These advantages are mainly attributed to the subwavelength dimensions of the nanowires, which makes the nanostructures behave like an effective homogeneous medium with continuous gradient of refraction index, significantly reducing the reflection through destructive interferences. The relation between the geometrical configurations of nanostructures and the light-trapping characteristics is discussed. We also demonstrated their applications in solar cells and photodetectors. This research paves the way to optimize the nanostructured optoelectronic devices with efficient light management by controlling structure profile of nanostructures. Dr. Jr-Hau He is an Associate Professor at Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science & Technology (KAUST). He was a Visiting Scholar at Georgia Tech (2005), a Postdoc Fellow at National Tsing Hua University (2006) and Georgia Tech (2007), a Visiting Professor at Georgia Tech (2008), UC Berkeley (2010 and 2014), UC San Diego (2012-2013), and HKPolyU (Dec. of 2014), and a tenured Associate Professor at National Taiwan University (2007-2014). He devotes his efforts in the development of transparent and flexible electronics using novel devices based on nanomaterials, including solar cells and photodetectors, LEDs, and memory devices. He is also interested in harsh electronics. His particular interest in solar energy include efforts to understand light scattering and trapping in nanostructured materials and designs for next-generation solar cells. He is also interested in transport of charge carriers across these solar cells as well as the improvement in light coupling with the combined effect to increase the efficiency of separating the photoinduced charges. Dr. He’s group is also currently involving in fundamental physical properties of nanomaterials, such as the transport and switching behavior of 2D nanomaterials. 11
© Copyright 2024