Current mirrors/sources

Current mirrors/sources
• Reproduce specific current value in different parts of a circuit. Initially assume that:
– The transistors output impedance ro .
– Identical Transistors,  IC1 = IC2 as Vbe1 = Vbe2.
• As  IC1 = IC2
• Summing currents at collector of Q1.
I ref  I C1 
This is easier on ICs due to transistors being on
the same substrate. Match around 1%.
2 I C1

0
 2
I C1 1    I ref
 
• Remember IC1 = IC2
IC 2 
Op Amp
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How to change current ratio in Q1 and Q2
•
•
•
•
Vary the transistor emitter area and hence Is.
Typical ratios up to ~ 5
There are other methods to be described later.
The output impedance of the current source can be very important if the collector voltage on Q2 varies. Look at Early voltage.
©2013 J Everard, University of York
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I ref
For large 
 2
1  
 
I C 2  I ref 
VCC  Vbe
R
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Simple current mirror with gain
• Add Q3 to reduce the effect of base currents in Q1, Q2 etc
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Ignoring O/P impedance of Q2
• As IC1 = IC2
I E3 
ib 3 
I C1


F
IC 2


F
2

Use emitter degeneration to:
IC 2
• Increase O/P resistance. Remember that for common emitter amp with external RE:
F
I E3
IC 2
2

 3  1  F  3  1
As I ref  I C1  ib 3 
As I C 2  I C1
2

F
Ro  ro 1  g m RE 
IC 2
 3  1

I C 2 1 
 
IC 2 

  I ref
2

F   3  1 
Let VRE  250mV
I ref

1 
 


F   3  1 
2
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Remember that:
I E1 RE1  Vbe1  I E 4 RE 4  Vbe 4
I
Vbe1  VT ln E1
I S1
RE
Then R0  r0 11
©2013 J Everard, University of York
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I E1
I
 I E 4 R4  VT ln E 4
I S1
IS4
1 
I I 
 I E1 R1  VT ln E1 S 4 
R4 
I S1 I E 4 
Take example : Let I C 4  2 I C1  2 I ref
• Note that
I E 4  I S 4 exp
R4
IE4 
– In this case also scale RE to keep VRE constant.
– Take base to ground voltages then:
Vbe1
VT
R1
I E1 R1  VT ln
• We can scale the emitter area to scale currents.
I E1  I S1 exp
 R I mA 
 R 

Ro  ro 1  E   ro 1  E E
25 mV 
 re 

V


 ro 1  RE 
 25mV 
Make I S 4  2 I S 1 and R1  2 R4
Vbe 4
VT
IC 4 
I
Vbe 4  VT ln E 4
IS4
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R1
I ref  2 I ref
R4
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Suppose emitter scaling not very accurate
• Suppose very low current sources are required and the resistor values need to be kept low. Use emitter resistor in one arm.
IS4
2
I S1
• Hence
• Then ‘ln’ term in equation is not zero however ‘ln’ term varies slowly.
ln 1  0
ln 0.5   0.6
ln 2   0.6
I E1 R1  VT
• If we ensure that then: IC 4 
R1
I ref
R4
Vbe1  Vbe 2  I E 2 R2
VT ln
I E1
IE2
I
Ignoring base currents I C 2 R2  VT ln E1
IE2
160
©2013 J Everard, University of York
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CASCODE current source
EOL
• Remember for simple Cascode the output impedance is increased to: Ro = ro. • Let VCC = 30V and R1 = 29.3k.
• Calculate R2 to obtain IC2 = 10A
Ignoring base currents
V  0 .7
I C1  CC
1mA
29.3k
VT ln
I E1
I
 VT ln E 2  I E 2 R2
IS2
I S1
Assume I S 1  I S 2 then I E 2 R2  VT ln
©2013 J Everard, University of York
Example
Widlar current source
 1mA 
I C1
  115mV
 25mV ln

IC 2
10
A


I E 2 R2 115mV
If we include the effect
of Q1 and Q3 then
Ro = (ro)/2
Basic Current Source
R2 11.5k
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• As Q1and Q3 are the same:
WILSON Current mirror
 2
I E 2  I C 3 1  
 
• High Output impedance
• Good current match
• Uses negative feedback
• Collector current of Q2=IC2
  
 2   
  I C 3 1  

I C 2  I E 2 
   1   
 1  
– For this calculation of IC2
assume that VA .
 IC3 
• Q2 emitter current is:
I E 2  I C 3  ib 3  ib1
 1 I
 I E 2  I C 3 1    C1
  
As I C1  I ref 
©2013 J Everard, University of York
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
and I C1  I C 3
It can be shown that :


2

I C2  I ref 1 - 2
   2  2 
r
Note also Ro  o 2
2
From Gray and Meyers
©2013 J Everard, University of York
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Active Loads (continued)
• Notes on resistive loads.
• To obtain high voltage gain use active load
to produce near horizontal load line without
large resistor.
– To obtain high voltage gain require large gmRL.
RL I C RL

re
VT
IC 2
Eol_11_wk_9_4_Dec_2012
Active Loads
g m RL 
1
IC 2
 2   

1  
   1   
Small
error
Needs to be large
Active
load
Active
load I/V
characteristic
• Therefore need large RL and large PSU.
– For example suppose we require a voltage gain of
500. As VT = 25mV, ICRL = 12.5Volts. In fact you
would need an even larger supply voltage to avoid
saturation (say twice!).
– Let IC = 100mA then RL would be 130k which is
very large and takes a large area.
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Biasing is critical to obtain
correct operating point©2013 J Everard, University of York
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Small signal gain (Active Load)
Av   g m ro1 // ro 2  
 g m1
1 1

ro1 ro 2
• Remember that:
1
V
ro 
where   T
 gm
VA
• Find the voltage gain (AV) when:
g m1
 Av  
 npn g m1  

pnp
gm2
Early Voltage
Early Factor
• As collector currents the same gm1 = gm2
 Av  
1
 npn  
(and Inverse sum of two Early Factors)
©2013 J Everard, University of York
pnp
 5.10 4
 npn  2.10 4
Early voltage  50V 
Early voltage  125V 
 Av  
Note Independent of current
pnp
Example
V
 T
VA
168
1
  1428
5.10  4  2.10  4
The voltage gain is only dependent on the transistor
parameters. Why should one use higher currents?
©2013 J Everard, University of York
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Improved difference amplifier with active load Emitter coupled pair (difference amplifier) with active load
Much better rejection of common mode I/P for single O/P than standard circuit.
Problems with current match in current sources
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Op amp
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Emitter coupled Differential Amplifier with Active Load
• Important features:
–
–
–
–
Gain
Output impedance
Offset voltage
Analysis of gain, output impedance & offset are shown in Appendix 1
Analysis of Gain, O/P impedance & offset voltage are
shown in appendix 1. Equivalent circuit shown here:
Use Hybrid  Transistor Model with:
rb = 0 (Base spreading resistance).
REE Current source impedance).
r (Feedback resistance)
Short I/P
to ground for
this analysis
re3
3
2
• The equivalent circuit is shown on the next slide
1
Node numbers
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1
npn  
  g m ro pnp // ronpn 
pnp
173
Require output impedance
Voltage Gain
V0

Vi 
©2013 J Everard, University of York
• As with calculation of Ro for common emitter amplifier with external RE
Short I/P
to ground for
this analysis
– Apply voltage source at O/P and calculate current. (NB short out voltage sources)
Short I/P
to ground for
this analysis
See O/P impedance of emitter follower
Output impedances in parallel
©2013 J Everard, University of York
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Take example (as before)
Voltage Gain
Output impedance
• IEE = 100A
Short I/P
to ground for
this analysis
V
1
Total Rout Ro  x 
 ronpn // ro pnp
1
1
ix

ronpn ro pnp
O/P resistances in parallel
©2013 J Everard, University of York
O/P impedance
Ro  ronpn // ro pnp
ronpn 
1
 npn g m
ro pnp 

1

pnp
gm
1
V
 2.5M  A

A
50
I




mV
25


2.10 
4

V
1
 1M  A
I
 50  A 


 25mV 
5.10 
4
Ro  2.5M // 1M  714k
ro 
VT

1
VT

I  gm
Eol_12_wk9_6_12_2012
NB: O/P impedance is set only by
the transistor parameters and the current!
©2013 J Everard, University of York
Early voltage  50V 
 npn  2.10 4
Early voltage  125V 
pnp
Av 
1
 npn 
  1428
pnp
NB: The voltage gain is set only by
the Transistor parameters!
176
Remember that :
V
ro  A
I
V
 T
VA
VA 
 5.10 4

178
©2013 J Everard, University of York
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Output Stages
• These are required to provide:
– Low output impedance
– capability for driving specified load with
• correct bandwidth
• correct slew rate
• specified output swing
– Low distortion
– meet specification for power dissipation
©2013 J Everard, University of York
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Examine large signal behaviour
Take example
Q2 is the current
source
Q1 is the emitter
follower
Diode partly
matches drift
in Q2
• Emitter Follower With a Current Source
– Examine both a large and small signal model:
Vin  Vbe1  Vout
As I E1  I S exp
Vbe1  VT ln
Vbe1
VT
I E1
IS
As I E1  I Q 
Vout
RL
Current source
©2013 J Everard, University of York
V

 I Q  out
RL
Vin  VT ln
 IS




 V
 out


180
V

 I Q  out
RL
Vout  Vin  VT ln
 IS








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Similar circuit with output capacitor
• This removes the offset voltage on the output and removes DC current flowing into the load.
• However the causes of saturation are very similar
Negative swing limited by
Value of current source
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©2013 J Everard, University of York
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Small signal behaviour of emitter follower
Input impedance of Emitter Follower
Work out input impedance
• Look at output impedance
– with finite and zero source impedance
VX    1ib re  RL 
• Look at input impedance when driving load RL
I X  ib
VX
   1re  RL 
IX
Also try with  model
©2013 J Everard, University of York
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O/P impedance of emitter follower
also mentioned earlier in the course
Also try with  model

VX    1ib re  ib RS
I X    1ib
• Need to use a full model, not half mode model as not symmetrical
• Try T model
– Can also use pi model
RS
VX   1ib re  ib RS
 re 

  1ib
  1
IX
©2013 J Everard, University of York
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Comments on differential Amplifier with single ended I/P and O/P
Work out output impedance
IGNORE LOAD RESISTANCE
short circuit
©2013 J Everard, University of York
+15V
CD1
0.1µF
R4
C1
Q1
C2
Q2
BC182 BC182
v
1
R1
10k
10k
R2
v
v0
2
0V
R3
-15V
186
©2013 J Everard, University of York
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• T Model for diff amp with single ended I/P & O/P described in class
Appendix 1
Full analysis Emitter coupled Differential Amplifier with Active Load
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Appendix 1 Emitter coupled Differential Amplifier with Active Load
©2013 J Everard, University of York
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Use Hybrid  Transistor Model with:
rb = 0 (Base spreading resistance).
REE Current source impedance).
r (Feedback resistance)
• Important features
– Gain
– Output impedance
– Offset voltage
re3
3
2
1
Node numbers
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©2013 J Everard, University of York
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• Summing currents at node 1 :
• Summing currents at node 2 :
ro1 current

Vi  V1
1     V2  V1  V3  V1  V1 1     0
r 1
ro1
ro2
r 2
Q1 base current
+ current source
Q2 base current
+ current source
Re-arranging


A   V1  1     1     1  1   V2

r 1
r
2
ro1
ro2

ro1

Re‐arranging
V3
V
  1

ro2
r 1
Note that the impedance presented by Q3 is the parallel combination
of ro3, r3, 1/gm3, r4. In fact re3 = (1/gm3 // r3)
(1/gm3) which is the dominant (smallest) term
©2013 J Everard, University of York

B  V1  1  gm1
 ro1
V3
V V
 V2 gm4  3 1  gm2V1  0
ro4
ro2
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– as currents the same.
1
• Assume that:
 g m
ro
A becomes

 1
1 
1 
  V2 gm4  V3 
  0
 V1  gm2 

ro2 

 ro4 ro2 
©2013 J Everard, University of York


   gmV
i



• Use B and C to eliminate V1 and V2 from A.
• Assume that gm1=gm2=gm3=gm4 Re‐arranging
C



  V2  1  1

 ro1
1


gm3

192
• Summing currents at node 3 :

V2 V2  V1

 Vi  V1 gm1  0
1
ro1
gm3
V0

Vi 
194
V3 
1
npn  
gmVi
1
1

ronpn ro pnp
 Vo
 g m ro pnp // ronpn 
pnp
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Require output impedance
• As with calculation of Ro for common emitter amplifier with external RE
– Apply voltage source at O/P and calculate current. (NB short out voltage sources)
See O/P impedance
of emitter follower
©2013 J Everard, University of York
• Total current is:
196
Same current, same gm
V
 ix 2  ix 4  x
2ro2
• Note this current passes into emitter of Q1
and through Q3 and Q4 with unity gain:
V
 ix 3  ix 2  ix 4  x
2ro2
©2013 J Everard, University of York
ix  ix1  ix 2  ix 3  ix 4
• IEE = 100A

Vx
1

 ronpn // ro pnp
1
1
ix

ronpn ro pnp
O/P resistances in parallel
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Take example as before
Voltage Gain
 1
1 

ix  Vx 

ro
ro
2 
 4
Total Rout Ro 
• Current in ro4 is: ix1  Vx ro
4
• Resistance presented to emitter of Q2 =
emitter resistance of Q1 =

1
1 
  2ro2
 Ro2  ro2 1  gm2 .
re1 
gm1
gm
1

198
pnp
 5.10 4
 npn  2.10 4
Av 
Early voltage  50V 
Early voltage  125V 
1
 npn  
 1428
pnp
©2013 J Everard, University of York
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O/P impedance
Ro  ronpn // ro pnp
ronpn 
1
 npn gm

1
V
 2 .5 M   A
I
 50  A 


 25mV 
2.10 
4
Remember that :
V
ro  A
I
V
 T
VA
VA 
ro 
ro pnp 
1

pnp
gm

V
1
1M  A
I
 50  A 


 25mV 
VT

1
VT

I  gm
5.10 
4
Ro  2.5M // 1M  714k
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Offset voltages
©2013 J Everard, University of York
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Offset voltages
• Look at offset for differential amp with active load.
• The offset voltage is the voltage we need to apply to the input to obtain zero volts at the output. • In this case that is when VCE3
= VCE4 and VCE1 = VCE2
• Offset voltages in active load emitter coupled circuits result from:
– Mismatches in Is of I/P transistors and load devices
– Base currents in the load devices
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©2013 J Everard, University of York
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I C1   I C 3  Base currents
Offset voltages calculation
• We therefore want to derive an equation for the offset voltage, VOS, in terms of , Is1, Is2, Is3, Is4 and the base currents.
I
I C 4  I C 3  S 4
• Collector current in Q4 =
 IS3
•
Note as IC2=‐IC4
 IS4 

I C 2   I C 3 
 IS3 
 2
I C1   I C 3 1   (B)
 



• The I/P offset voltage is:
• VOS=VBE1‐VBE2
I C  I S exp
VBE
VT
I
VBE  VT ln C
 IS
I I 
VOS  VT ln C1 . S 2 
 I C 2 I S1 
( A)
©2013 J Everard, University of York
Remember that :
204
©2013 J Everard, University of York
(C)
205
Algebra Page
• Substitute A and B in C.

 2

I C 3 1   
 
I
VOS  VT ln S 2 . 

 I S 1  I C 3  I S 4  
 I 

 S3  

NB
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X  X 1  X 2
X
from 1 X 1  X 2  X
 I I  2 
VOS  VT ln S 2 . S 3 1   
 I S1 I S 4    
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X 1  2 X  X 1  X
X
X1  X 
2
206
X1  X 2
average 2 
2
from (2)
2X  X1  X 2
X 2  2X  X1
2 X 1  2 X  X
Simplify this expression for small purturbations
©2013 J Everard, University of York
X1
X  perturbation
can be represented as
X2
X  perturbation
Let
 difference 1
X1  2X  X 2
X2  X 
X
2



©2013 J Everard, University of York. 207
Algebra page
 X
A  ln 
 X
For
1
2
X

 X 

2
  ln 

 X  X


2




1
  ln 

1




X
2X
X
2X
X
 1 and using Binomial expansion
2X






Small change
for IS of pnp
 X
 
X

Ignore
IS3  IS4
2
For X<<X
©2013 J Everard, University of York
208
Take Example
I S
• Let vary by up to +
5% worse case.
IS
• And  = 20.
VOS  VT 0.05  0.05  0.1  0.2 VT  5mV
©2013 J Everard, University of York
Small change
for IS of npn
 I
I
2
VOS  VT  SP  SN  
I SN

 I SP
 X X 2  X
 X  X 

A  ln1 

  ln1 
1 
X 4 X 2 
X
 2 X  2 X 

X
ln 1
 X2
 I I  2 
As VOS  VT ln S 2 . S 3 1   
 I S1 I S 4    
For small perturbations
Divide top and bottom
by X
210
pnp
npn
I S 2  I S1
2
©2013 J Everard, University of York
209