Thermal and Structural Characterizations of Individual Carbon Nanotubes Michael Thompson Pettes and Li Shi Department of Mechanical Engineering and the Center for Nano and Molecular Science and Technology, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, USA Background Conclusions Several thermal conductance measurements have been made on individual carbon nanotubes (CNTs) since 2001. A major deficiency in these measurements is that the chiral angle, defect concentration, and thermal contact resistance of the individual nanotubes were not characterized in detail. Additionally, thermal transport in CNTs with high electrical bias have been shown to have large non-equilibrium phonon populations, exhibiting different thermal transport characteristics than in CNTs with thermalized phonons. • Defect concentration appears to increase with number of walls • Thermal contact resistance per unit length obtained for three as-grown multi-walled carbon nanotubes (MWCNTs) is in the range of 78 – 585 mKW-1 at room temperature Objectives • Intrinsic thermal conductivity for three MWCNTs is in the range of 42 – 343 Wm-1K-1; the calculated phonon mean free path correlates well with the TEM observed defect concentration • Establish the structure-thermal property relationship by conducting thermal conductance and transmission electron microscopy (TEM) on the same individual single-walled (SW), double-walled (DW), and multi-walled (MW) CNTs grown by thermal chemical vapor deposition (CVD) between two suspended microthermometers • Large thermal contact resistance limits effective for asgrown SW and DW CNTs to ~ 600 Wm-1K-1 at room temperature • Quantify the thermal contact resistance to CNTs by conducting thermal measurements before and after deposition of platinum-carbon (Pt-C) composites at the contacts. CNT Growth Method Suspended Microthermometer Device • Methods Updated design of Shi, L., et al., ASME J. Heat Transfer 125, 881 (2003) Thermal Resistance Circuit • 1 nm Fe, 0.5 nm Ru thin-film evaporated / sputtered onto electrodes • Growth at 900 oC with 200 cm3min-1 flowing methane. Qh=Idc2Rh = Joule heating generated on heating membrane Ql=Idc2Rl = Joule heating generated in each of the two DC current-carrying leads dR Th Th T0 Relectrical ,h Th electrical ,h dT dRelectrical , s Ts Ts T0 Relectrical , s Ts dT Fe-Ru Catalyst 1 1 Q Ts / RB Th Ts / Rs Th Ts RB Qh Ql Methane Hinged Furnace T - Ts Rs Rc ,l Rc ,r RNT RB h T s 1" Quartz Tube T + Ts Th - Ts Rs h Q +Q T L s h 900 °C Dimensions SWCNT Sample S1 SWCNT Sample S2 MWCNT Sample M1 Sample # Walls di / do [nm] L [µm] Lc,l [µm] Lc,r [µm] S1 1 2.34 4.31 N/A 2.10 S2 1 1.5 2.03 0.72 N/A D1 Samples Frontispiece for M.T. Pettes, L. Shi, Adv. Funct. Mater.; DOI: 10.1002/adfm.200900932 to appear in issue 24/2009 Presented at the 2009 Fall Meeting of The Materials Research Society, 2009 Nov 30 – Dec 4, Boston, MA; Session K – Nanotubes and Related Structures, K18.31. 2 2.1 / 2.7 4.02 0.40 0.64 A 5 7.0 / 10.3 3.02 0.92 2.53 M1 B 5 7.0 / 10.5 2.83 2.44 2.53 C 5 6.9 / 9.9 3.06 0.80 1.63 M2 5 6.8 / 9.9 1.95 2.14 0.40 M3 7 6.7 / 11.4 1.97 3.28 0.57 Before Pt-C Grain size, La ~ 29 nm After Pt-C DWCNT Sample D1 Grain size, La ~ 33 nm MWCNT Sample M3 11 6.6 / 14.0 3.31 2.29 MWCNT Sample M4 Before Pt-C Grain size, La ~ 20 nm Before Pt-C M4 MWCNT Sample M2 5.63 After Pt-C di and do are the inner and outer CNT diameters, respectively. L is the as-grown CNT suspended length. Lc,l and Lc,r are left and right CNT-membrane contact lengths. MWCNT sample M1 consists of three individual CNTs in parallel, labeled A, B, and C. N/A = not available. After Pt-C After Pt-C Grain size, La ~ 13 nm Chirality determined from electron diffraction per Gao et al., Appl. Phys. Lett. 82, 2703 (2003) Effective Thermal Conductivity Thermal Contact Resistance and Intrinsic Thermal Conductivity We express the thermal contact resistance using the fin heat transfer model: 1 Rc , j A L c, j NT tanh R ' c NT AR' c Results To estimate the per unit length thermal contact resistance value after Pt-C deposition, R'c,a, we analyze the work of Chang et al., Phys. Rev. Lett. 101, 075903 (2008) to obtain We use the obtained intrinsic thermal conductivity, and the specific heat, C, and basal plane debye velocity, n, for graphite to obtain the phonon mean free path, l, using the expression from kinetic theory: 12 Cn l • R'c,a = 10 – 41 mKW-1 We use the measured thermal resistance before and after Pt-C deposition along with the R'c,a value to calculate the R'c,b value before Pt-C deposition and the intrinsic axial thermal conductivity, NT: As-measured effective thermal conductivity () versus temperature (T) for the two SWCNT, one DWCNT, and four MWCNT samples in this work. Filled symbols and unfilled symbols are results measured before and after Pt-C deposited at the contacts, respectively. Acknowledgements Measured thermal resistance (Rs) versus temperature (T) for three MWCNT samples before (filled symbols) and after (unfilled symbols) Pt-C was deposited at the contacts. U.S. Department of Energy award DE-FG02-07ER46377 Sample R'c,b [mKW-1] NT [Wm-1K-1] M1 201 – 258 269 – 343 M3 78 – 125 178 – 336 M4 439 – 585 42 – 48 Phonon mean free path (l) determined from the obtained intrinsic thermal conductivity versus the effective grain size (La) obtained by TEM for three MWCNTs. E-mail: [email protected] National Science Foundation Graduate Research FellowshipWeb: Program http://www.me.utexas.edu/~lishi National Science Foundation Thermal Tel: Transport (512) 471 Processes – 6133 Program Fax: (512) 471 – 1045 Contact
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