ASDAM 2014 10th International Conference on Advanced Semiconductor Devices and Microsystems th Sunday 19 October 2014 15:00 20:00 Registration 19:00 22:00 Welcome Party th Monday 20 October 2014 th Tuesday 21 October 2014 th Wednesday 22 October 2014 8:00 9:00 Registration 9:00 9:20 Introduction & Welcome 9:20 10:00 Invited Talk 1 9:00 9:40 Invited Talk 4 9:00 9:40 Invited Talk 7 10:00 11:00 Sensors & Microsystems 1 9:40 11:00 GaN Based Structures & Devices 3 9:40 11:00 Solar cells 11:00 11:20 Coffee Break 11:00 11:20 Coffee Break 11:00 11:20 Coffee Break 11:20 12:00 Invited Talk 2 11:20 12:00 Invited Talk 5 12:00 13:00 Organic electronics 12:00 13:00 Advanced Devices 11:20 13:00 Photovoltaics – LED’s 13:00 14:00 Lunch 13:00 14:00 Lunch 13:00 14:00 Lunch 14:00 14:50 Poster Session 1 Technology & Devices 14:00 14:50 Poster Session 2 Characterization & Sensors 14:00 15:40 SMArt System Co-design - Special session of 7 FP project SMAC 15:00 15:40 Invited Talk 3 15:00 15:40 Invited Talk 6 15:40 Closing Address 15:40 16:40 GaN Based Structures & Devices 1 15:40 16:40 Sensors & Microsystems 2 16:40 17:00 Coffee Break 16:40 17:00 Coffee Break 17:00 19:00 GaN Based Structures & Devices 2 17:00 19:00 Characterization & Modeling 19:30 Dinner & Wine Testing 19:30 Conference Dinner Monday 20th October 2014 Invited Talk 1 9:20 - 10:00 Functional Materials for MEMS Fabrication at C2MI’s Microsystems Integration Lab Luc Ouellet Sensors & Microsystems 1 10:00 - 10:20 Energy Harvesting Using Thermoelectric Microgenerators: A Critical Analysis G. Wachutka 10:20 - 10:40 Influence of temperature on the sensitivity of the AlGaN/GaN C-HEMT-based piezoelectric pressure sensor J. Dzuba, G. Vanko, I. Ryger, M. Vallo, V. Kutis, T. Lalinsky 10:40 - 11:00 Temperature sensor on flexible substrate patterned by laser ablation M. D. Dankoco , E. Benevent, E. Bergeret, L. Gallais, M. Bendahan Invited Talk 2 11:20 - 12:00 Organic semiconductor based electronics M. Weis Organic Electronics 12:00 - 12:20 Analysis on carrier trapping mechanism in organic devices by charge modulation spectroscopy and nonlinear optical polarization E. Lim 12:20 - 12:40 Probing and Modelling of Carrier Transport in Organic Devices by Optical Second Harmonic Generation M. Iwamoto, T. Manaka, D. Taguchi 12:40 - 13:00 Technology of conductive polymer PEDOT:PSS films J. Nevrela, M. Micjan, M. Novota, S. Flickyngerova, J. Kovac Jr, M. Pavuk, P. Juhasz, J. Jakabovic, M. Weis Poster Session 1 Technology & Devices 1.1. SiC graphene FET with polydimethylglutarimide as a gate dielectric layer J. Nahlik, Z. Soban, J. Voves, V. Jurka, P. Vasek 1.2. Electrical characterization of diamond films deposited in nitrogen and oxygen containing gas mixture M. Mikolasek, M. Vojs, M. Varga, O. Babchenko, T. Izak, M. Marton, A. Kromka, L. Harmatha 1.3. Radiation Hardness of 4H-SiC Structures A. Kosa, J. Benkovska, L. Stuchlikova, D. Buc, F. Dubecky, L. Harmatha 1.4. Electrical properties of semi-insulating GaAs irradiated with 5 MeV electrons P. Bohacek, B. Zatko, A. Sagatova, P. Hybler, M. Sekacova 1.5. M/SI-GaAs/M diode: Role of the metal contact in electrical transport, particle and photon detection F. Dubecky, B. Zatko, G. Vanko, M. Dubecky, P. Hubik, J. Oswald, D. Kindl, E. Gombia, M. Micusik, J. Kovac, A. Sagatova, V. Necas 1.6. Transition from amorphous silicon to silicon nitride in thin films deposited by PECVD technology from silane diluted with nitrogen P. Sutta, P. Calta, J. Mullerova, M. Netrvalova, J. Savkova, V. Vavrunkova 1.7. Development issue in mushroom-like profile fabrication in EBL double step exposure method K. Indykiewicz, B. Paszkiewicz, R. Paszkiewicz 1.8. Electron irradiation effects on the characteristics of GaAs detectors A. Sagatova, B. Zatko, K. Sedlackova, P. Hybler, V. Necas 1.9. Analysis of detection properties of particle detectors based on 4H-SiC high quality epitaxial layer B. Zatko, F. Dubecky, K. Sedlackova, A. Sagatova, L. Ryc, P. Bohacek, M. Sekacova, V. Necas 1.10. Determination of elastic properties of surface layers and coatings M. Sevcik, M. Husak 1.11. Precise etching of AlGaN/GaN HEMT structures with Cl2/BCl3/Ar plasma J. Gryglewicz, R. Paszkiewicz, W. Macherzynski, M. Wosko 1.12. Application of real time in-situ interferometry for the observation of GaN/Si MOVPE growth process T. Szymanski, M. Wosko, B. Paszkiewicz, R. Paszkiewicz 1.13. Different buffer aproaches for AlGaN/GaN heterostructures epitaxy on Si(111) substrates M. Wosko, B. Paszkiewicz, T. Szymanski, R. Paszkiewicz 1.14. III-nitride nano-LEDs for single photon lithography St. Trellenkamp, M. Mikulics, Y. C. Arango, A. Winden, R. Adam, J. Moers, M. Marso, D. Grutzmacher, H. Hardtdegen 1.15. Electromagnetic energy absorption potential in the GHz frequency range of SiC films prepared by PECVD technology J. Huran 1.16. Ferroelectric polymer films for flexible memory devices M. Micjan, J. Nevrela, M. Novota, S. Flickyngerova, P. Juhasz, J. Uhrik, J. Jakabovic, M. Weis 1.17. New phenyl-based organic semiconductor material for electronic devices M. Novota, M. Micjan, J. Nevrela, S. Flickyngerova, P. Juhasz, R. Misicak, M. Putala, J. Jakabovic, M. Weis 1.18 Novel Double-Level-Gate Technology A. Fox, M. Mikulics, H. Hardtdegen, St. Trellenkamp, Y. C. Arango, D. Grutzmacher, Z. Sofer, D. Gregusova, J. Novak, P. Kordos , M. Marso Invited Talk 3 15:00 - 15:40 Novel GaN-based transistors using polarization engineering A. Vescan GaN Based Structures & Devices 1 15:40 - 16:00 Design of GaN Trig-Gate HEMTs M. Alsharef, R. Granzner, E. Ture1, R. Quay, J. Racko, J. Breza, and F. Schwierz 16:00- 16:20 Modeling and characterization of power InAlN/GaN HEMTs supported by 3-D electrothermal simulation M. Molnar, D. Donoval, A. Chvala, J. Marek, P. Pribytny 16:20 - 16:40 AlN/GaN/AlN double heterostructures with thin AlN top barriers Ch. Zervos, A. Bairamis, A. Adikimenakis, A. Kostopoulos, M. Kayampaki, K. Tsagaraki, G. Konstantidis, A. Georgakilas GaN Based Structures & Devices 2 17:00 - 17:20 Impact of off-state stress on electrical parameters of AlGaN/GaN HEMTs P. Benko, M. Florovic, J. Kovac, P. Kordos, L. Harmatha 17:20 - 17:40 Impact of the buffer structure on trapping characteristics of normally-off pGaN/AlGaN/GaN HEMTs for power switching applications M. Tapajna, L. Valik, P. Kotara, R. Zhytnytska, F. Brunner, O. Hilt, E. B. Treidel, J. Wuerfl, J. Kuzmik 17:40 - 18:00 Investigation of defects in GaN HFET structures by electroluminescence J. Priesol, A. Satka, L. Sladek, D. Donoval 18:00 - 18:20 Different polarities of InN (0001) heterostructures on Si (111) substrates A. Bairamis, A. Adikimenakis, A.O. Ajagunna, Th. Kehagias, G.P. Dimitrakopulos, J. Kioseoglou, Ph. Komninou, J. Kuzmik, A. Georgakilas 18:20 -18:40 Gate leakage reduction of AlGaN/GaN MOSHFET with HfO2 prepared by ALD R. Stoklas, D. Gregusova, M. Blaho, K. Cico, K. Frohlich, J. Novak, P. Kordos 18:40 - 19:00 GaN HEMTs on Si Substrate with High Cutoff Frequency W. Jatal, K. Tonisch, U. Baumann, F. Schwierz, J. Pezoldt Tuesday 21th October 2014 Invited Talk 4 9:00 - 9:40 GaN transistor instabilities and reliability M. Uren GaN Based Structures & Devices 3 9:40 - 10:00 Time Resolved EBIC Study of InAlN/GaN HFETs A. Satka et al. 10:00 - 10:20 Analysis of Time Dependent Current Collapse in AlGaN/GaN HEMTs R. Maeta, H. Tokuda, M. Kuzuhara 10:20 - 10:40 Modelling and Optimization of GaN Capped HEMTs S. Faramehr, P. Igic, K. Kalna 10:40 - 11:00 Influence of geometry on switching transients of InAlN/GaN HEMT. J. Marek, A. Satka, D. Donoval, M. Molnar, J. Priesol, A. Chvala Invited Talk 5 11:20 - 12:00 Energy efficient computing with tunnel FETs A. Ionescu Advanced Devices 12:00 - 12:20 Simulative Study on Quantum Modelling for Submicrometer Highly-strained In0.8Ga0.2As/AlAs Double Barrier Resonant Tunnelling Diode W. M. Jubadi, M. A. Zawawi, M. Missous 12:20 - 12:40 A Novel Area-Efficient Large-Periphery FD-SOI MOS Device Architecture for the Higher Powers and Efficiency A. H. Tarakji 12:40 - 13:00 Statistical Analysis of Active and Passive RF Devices M. Pak, A. E. Yarimbiyik, G. Dundar, F. Fernandez Poster Session 2 Characterization & Sensors 2.1. Electrical transport characteristics of (Mo/Au)/AlGaN/GaN/Si Schottky diodes as a function of temperature H. Mosbahi 2.2. Model of Coupled Defect Level Recombination with Participation of Multiphonons J. Racko, R. Granzner, P. Benko, M. Mikolášek, L. Harmatha, M. Kittler, F. Schwierz and J. Breza 2.3. Defects in Schottky Diodes Based on AlGaN/GaN Heterostructures L. Stuchlikova, A. Kosa, J. Benkovska, P. Benko, L. Harmatha, J. Kovac, D. Donoval 2.4. DLTS Study of Electrically Active Defects in Triple Quantum Well InGaAsN/GaAs Heterostructures J. Jakus, L. Stuchlikova, A. Kosa, L. Harmatha, J. Kovac, B. Ściana, W. Dawidowski, D. Radziewicz, D. Pucicki, M. Tłaczała 2.5 Degradation process in AlGaN/GaN HEMTs under high drain-bias off-state stress M. Florovic, J. Kovac, P. Benko, P. Kordos, J. Skriniarova, D. Donoval, T. Lalinsky, G. Vanko 2.6. Characterization of Gas Sensor with Polyaniline Film J. Kroutil, A. Laposa, J. Nahlik, A. Boura, M. Husak 2.7. Simulation of Distributed MOEMS for Smart Environments V. Shakhnov, L. Zinchenko, I. Kosolapov 2.8. Quality Water Analyzer M. Husak, A. Laposa, P. Kulha, P. Nepras 2.9. Translator with Magnetic Levitation F. Puci, M. Husak 2.10. Precise beat frequency evaluation circuit for multi-oscillators QCM gas detectors A. Boura, J. Kroutil 2.11. Low and high frequency capacitance of insulator/AlGaN/GaN heterostructure J. Osvald 2.12. Energy harvesting in 3D V. Janicek 2.13. Calculation of accurate channel spacing of an Arrayed Waveguide Grating optical multiplexer/demultiplexer E. Hodzic, D. Seyringer, F. Uherek, J. Chovan, A. Kuzma 2.14. Design of Low Losse 1x64 Y- branch Splitter Having Symmetric Splitting Ratio C. Burtscher, D. Seyringer, F. Uherek, J. Chovan, A. Kuzma 2.15. Methods for lifetime characterization of concentric circuit boards J. Formanek, J. Jakovenko 2.16. Analysis of Interfering Signals in Structures of Integrated Circuits J. Novak, J. Foit 2.17. Modeling of geometrically scalable integrated finger diodes V. Kosel, F. Roger, K. Molnar, W. Posch, E. Seebacher 2.18 Special-purpose oscillators J. Foit, M. Husak Invited Talk 6 15:00 - 15:40 The characterization and use of nanostructured films in sensing applications O. N. De Oliveira Jr. Sensors & Microsystems 2 15:40 - 16:00 Sensitivity and long term stability of -Fe2O3 and CoFe2O4 nanoparticle gas sensors for NO2, CO and acetone sensing - a comparative study S. Luby, M. Jergel, M. Benkovicova, P. Siffalovic, J. Ivanco, K. Vegso, E. Majkova, R. Rella, M. G. Manera, S. Capone 16:00 - 16:20 Complex measurement of human physiology using a miniature wireless sensors E. Vavrinsky, D. Moskalova, J. Mihalov, M. Donoval, M. Daricek, V. Stopjakova 16:20 - 16:40 Using of laser ablation technique in the processing technology of GaN/SiC based MEMS for extreme conditions J. Zehetner, G. Vanko, P. Choleva, J. Dzuba, I. Ryger, T. Lalinsky Characterization & Modeling 17:00 - 17:20 AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures G. Vanko, M. Vojs, P. Choleva, M. Marton, I. Ryger, J. Dzuba, T. Lalinsky 17:20 - 17:40 Modelling Heating Effects due to Current Crowding in ZnO Nanowires with End-Bonded Metal Contacts O. Kryvchenkova, K. Kalna, R. J. Cobley 17:40 - 18:00 Material and electrical properties of N-polar (GaN)/InN surfaces. K. Cico, A. Adikimenakis, M. Micusik, A. Georgakilas, J. Kuzmik 18:00 - 18:20 Templates for highly ordered SiGe-QD arrays for single photon detection J. Moers, N. P. Stepina, St. Trellenkamp, D. Grutzmacher 18:20 - 18:40 Application of TCAD in a Development of a Fully Complementary Vertical PNP IC Technology for High Performance Analog Applications R. Spetik, S. Kapsia, J. Pjencak 18:40 - 19:00 Total internal reflection ellipsometry in the investigation of phenomena at surfaces and interfaces for biosensing J. Chlpik, K. Bombarova, J. Cirak Wendesday 22th October 2014 Invited Talk 7 09:00 - 09:40 Photonic and plasmonic structures for applications in solar cells M. Zeman Solar cells 09:40 - 10:00 Spectral Analysis of InxGa1-xN/GaN Quantum Well Structures for III-nitride based Solar Cells D. O’Mahony, P. J. Parbrook, B. Corbett, J. Kovac, J. Kovac jr., M. Florovic, A. Vincze 10:00 - 10:20 Determination of defect states in P3HT material for solar cell application P. Juhasz, L. Stuchlikova, M. Micjan, L. Harmatha, J. Jakabovic, M. Weis 10:20 - 10:40 Opto-electrical approaches to make high efficiency ultra-thin crystalline silicon solar cells A. Ingenito, O. Isabella , M. Zeman 10:40 - 11:00 Planar waveguide based structures for integrated optics on PDMS D. Jandura, D. Pudis Photovoltaics - LED's 11:20 - 11:40 Influence of Geometry on the Directionality of Light Emission of Nano-rod Array Vertical Light Emitting Diodes S.A. Fox, S. Lis, S.E.J. O'Kane, D.W.E. Allsopp, J. Sarma 11:40 - 12:00 Investigation of Optical Stability Issues with Embedded Semiconductor Quantum Dots used as Colour Conversion Material in LED Lighting Applications D. Schmidmayr, J. Zehetner 12:00 - 12:20 InGaN nano LEDs for energy saving optoelectronics M. Marso, H. Hardtdegen, A. Winden, Y. C. Arango, Z. Sofer, D. Grutzmacher, M. Mikulics 12:20 - 12:40 Detailed optical and electrical characterisation of green – orange InGaN/GaN LEDs grown by MOVPE K. Cavanagh, C. Liu, T. Martin, M. A. Hopkins, S. Sivaraya, D. W. E. Allsopp 12:40 - 13:00 LEDs with polydimethylsiloxane 2D PhC membrane in the surface D. Pudis, L. Suslik, P. Gaso, S. Slabeyciusova, J. Kovac, P. Hronec, R. Nolte, P. Schaaf SMArt System Co-design - Special session of 7 FP project SMAC 14:00 - 14:20 Homogenous Simulation: the Effective Integration Solution for Smart Systems F. Fummi, M. Lora, D. Trachanis, J. V. Hese, S. Vinco 14:20 - 14:40 Advanced methodology for fast 3-D TCAD electrothermal simulation of power devices A. Chvala, D. Donoval, J. Marek, P. Pribytny, M. Molnar 14:40 - 15:00 A MEMS Design Methodology for Model-Order Reduction, based on Highorder Parametric Elements A. Sanginario, G. Schropfer, S. Zerbini, M. Ekwinska, R. Houlihan, D. Demarchi 15:00 - 15:20 Design and simulation of an integrated optical CMOS heart rate sensor D. He, S. P. Morgan, D. Trachanis, J. V. Hese, D. Drogoudis, F. Fummi, F. Stefanni, V. Guarnieri, B. R. H. Gill 15:20 - 15:40 Simulation Methodology for 3-D TCAD Electrophysical and Optical Analysis of Solar Cell P. Pribytny, A. Chvala, M. Molnar, D. Donoval, J. Marek, M. Mikolasek Closing Address 15:40