NaPiCa Light Sensor Panasonic Electric Works Corporation of America Oct 2009

NaPiCa
Light Sensor
Oct 2009
Panasonic Electric Works Corporation of America
NaPiCa Light Sensor
SMD
Description
NaPiCa is a visible light sensor (photo IC). Design consists
of a photodiode and a built-in current amplifier.
Through-hole
Function
NaPiCa sensor works by detecting visible light and
converting it to electrical current. A special filter allows
sensitivity that resembles the human eye.
Usage
Visible light sensors are used to conserve energy, reduce
environmental impact, improve safety and convenience.
Chip
2
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Technology Comparison
Material
Product Name
Photodiode
Visible Light
Sensor
Silicon
Silicon Photo IC
Solar cell
Cadmium sulfide
Photodiode
3
Phototransistor
NaPiCa
Amorphous silicon
CdS photoconductive
cell
Output current is low and requires an amplifier for high output current.
Phototransistor
Integrated photodiode combined with a transistor. Good performance with low output current.
Silicon Photo IC
Integrated photodiode and amplifier IC with a high photocurrent output.
Amorphous silicon
High visual sensitivity with low photocurrent. Requires an amplifier and optical filter.
CdS photoconductive
cell
Diode becomes conductive when internal resistance changes due to the illumination level.
Features response similar to the human eye. Contains cadmium and not RoHS compliant.
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Wavelength Sensitivity Characteristics
• Built-in optical filter provides sensitivity characteristics near human vision spectral sensitivity
⇒ Peak sensitivity wavelength: 580nm (Chip design: 560nm)
UV spectrum
Visible light spectrum
Infrared spectrum
1
Relative sensitivity
0.8
0.6
Human
spectral
sensitivity
NaPiCa spectral sensitivity
(SMD, through-hole)
NaPiCa spectral sensitivity
(Chip)
0.4
0.2
0
300
400
500
600
700
800
900
1000
1100
Wavelength (nm)
4
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Linear Output
10000
Photocurrent
1000
SMD,
through-hole
Chip
100
10
(μA)
1
0.1 1
10
100
1000
10000
Brightness (lx)
Typical Characteristics
5
Item
Symbol
SMD / Through-hole
Chip
Illumination
(fluorescent light)
Photocurrent 1
IL1
13A
1A
5 lx
Photocurrent 2
IL2
260A
20A
100 lx
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No Need for External Amplifier
Internal circuit
Built-in amp
AMS104
SMD
Amp
AMS402
Chip
AMS302
Through-hole
High sensitivity
(photocurrent output)
6
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Sensor Enclosure
NaPiCa
Others
Incident light
Incident light
Cover
Cover
Incident light attenuation
7
Incident light attenuation
High
sensitivity
Low
sensitivity
Sufficient output
Insufficient output
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Temperature Stability
NaPiCa
Others
Approx. -50% to +100%
Approx. 5%
Sensitivity
Sensitivity
-30℃
8
Temperature
+85℃
-30℃
Temperature
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+85℃
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Terminal Shape
NaPiCa SMD
Close-up of terminal soldering inspection
9
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Chip Version
AMS104
AMS402
Compact,
small current
consumption
1.0
0.55
1.25
2.0
3.2
※ Built-in amp circuit
2.0
※ Built-in amp circuit
Photocurrent = 260μA @100 lx
Photocurrent = 20μA @100 lx
(Dimension unit: mm)
10
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Brightness vs. Output Voltage
Vcc
Light
AMS104
Vo
IL
11
RL
Output voltage V O( V)
Light source: fluorescent, power voltage: 5V, ambient temperature: 25 oC
5
4
3
2
Load resistance RL
1
1kΩ
5.1kΩ
0
0
200
400
600
Brightness (lx)
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2kΩ
10kΩ
800
3kΩ
20kΩ
1000
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Reverse Voltage & Photocurrent
Input side (cathode)
Apply voltage to photodiode
Light
Forward
voltage
+
Reverse
voltage
+
+
×
NO
-
-
uA
-
YES
Amp
pA
Output side (anode)
Figure 1 – Reverse voltage applied
to photodiode
12
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Dark Current (Leakage Voltage)
Input side(cathode)
When reverse voltage is applied into a sensor at a dark place, leakage
voltage occurs. This value is called “dark state current”.
Sensors have leakage current because of semiconductor
characteristics.
Amp
nA
Output side(anode)
Maximum 0.3μA (SMD, through-hole), maximum 0.05μA (Chip)
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Light Sensor Reference Data
10,000
Photocurrent (μA)
1,000
100
100 lx:260A
10
5 lx:13A
1
1
10
100
1000
10000
Brightness (lx)
Figure 2 – Photocurrent vs. brightness characteristics
Photocurrent
Reverse voltage
Output voltage
Load resistance
Power voltage
Vcc
Cathode
Anode
Microcomputer
Comparator
Figure 3 – General circuit configuration
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Power dissipation
(mW)
Dark current (uA)
Power Dissipation, Dark Current, Photocurrent
Ambient temp.
(°C)
Ambient temp.
(°C)
Figure 4 – Power dissipation vs.
ambient temperature characteristics
Figure 5 – Dark current vs. ambient
temperature characteristics
Light source: fluorescent, CEI standard A light source;
Reverse voltage: 5V; Ambient temp.: 25oC
Photocurrent (uA)
Figure 6 – Photocurrent vs. brightness
characteristics
Brightness (lx)
15
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Relative Current, Switching Time
Relative
photocurrent (uA)
Light source: fluorescent; Brightness: 100 lx; Reverse voltage: 5 V
Figure 7 – Relative photocurrent vs.
ambient temp. characteristics
Ambient temp.
(°C)
Relative
photocurrent (uA)
Figure 8 – Relative photocurrent vs.
reverse voltage characteristics
Figure 9 – Switching time vs. load
resistance characteristics
NaPiCa SMD
Ambient temp.
(°C)
16
Light source: White LED; Reverse voltage: 2.5 V;
Load resistance power: 2.5 V; Ambient temp.: 25oC
Switching time (ms)
Light source: fluorescent lamp; Brightness: 100 lx;
Ambient temp: 25oC
Load resistance (kΩ)
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NaPiCa Product Line
AMS302
Through-hole
• CdS replacement
• 260μA photo current
• Automatic mounting
• 260μA photo current
AMS104
• Compact design
• Low current
consumption
SMD
AMS402
Chip
17
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Display Backlight Control
NaPiCa
light sensor
Vcc
Light
② Change of
load resistance
voltage
18
Amp
Photocurrent
μP
Driver
① Photocurrent of
light sensors
varies depending
on ambient
temperature
③ Microcomputer adjusts the brightness of LCD backlight
R Load
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Sensor Applications
19
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NaPiCa Advantage
• Built-in amplifier eliminates external amplification
• Photo IC with high sensitivity
• Temperature stability with minimum sensitivity effect
• RoHS friendly silicon design and easy CdS cell replacement
• SMD, through-hole and chip design
20
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End
Panasonic Electric Works Corporation of America