OPTODEVICES Product Information Nov. 2014 USHIO OPTO SEMICONDUCTORS, INC. UOS-GC001 Vol. 1 New Product New Product HL40053MG Applications Direct Imaging Bio & Medical Measurement Features Optical output power: 400mW CW Violet lasing: 398 - 410nm @ 400mW Low operating current: 370mA typ @ 400mW Low operating voltage: 4.9V max @ 400mW Small package: 5.6mm Multiple transverse mode TE mode oscillation Optical Output Power vs. Forward Current Outtput Power Po (mW) 500 400 Tc=0℃ 25℃ Unit :(mm) 300 30℃ Internal circuit 200 ((1)) ((3)) 100 LD 0 0 200 400 Forward current If (mA) 600 (flange) (2) 2 www.ushio-optosemi.com HL40053MG specifications Absolute Maximum Ratings (Tc=25 oC) Note1) Note1) These values should not be exceeded under any conditions. N t 2) Operating Note2) O ti temperature t t “Topr” “T ” is i defined d fi d b by C Case ttemperature t “T “Tc”. ” LD chip hi temperature t t is i getting tti higher during operation due to its high current density and small package. Thus, without proper heat dissipation less optical output power than specified one could be observed or it results to LD degradation. It is advised that sufficient heat dissipation should be taken not to exceed the maximum operating temperature during actual operation. Optical and Electrical Characteristics (Tc=25 oC) 3 www.ushio-optosemi.com New Product New Product HL40041MG Applications Bio & Medical Measurement Features Operation temperature: -10~+50℃ Optical output power: 150mW CW Violet lasing: 404 nm typ @ 150mW Low operating voltage: 5.0V max @ 150mW Small package: 5.6mm Multiple transverse mode TE mode oscillation Optical Output Power vs. Forward Current Outp put Power Po (mW) 150 10℃ 50℃ 0℃ 100 Unit :(mm) 40℃ -10℃ 25℃ Internal circuit ((1)) 50 ((3)) LD 0 0 100 200 300 (flange) Forward current If (mA) (2) 4 www.ushio-optosemi.com HL40041MG specifications Absolute Maximum Ratings (Tc=25 oC) Optical and Electrical Characteristics (Tc=25 oC) 5 www.ushio-optosemi.com Preliminary Under Development HL40033G Applications Direct Imaging for PCB Industry Display Bio & Medical Glass Features Emitting point Optical output power: 1,000mW CW Violet lasing: 405 nm typ. Low operating current: 900mA typ. Low operating voltage: 5.5V max Package: 9.0mm 9 0mm Multiple transverse mode TE mode oscillation Unit :(mm) Internal circuit ((1)) ((3)) LD (flange) (2) 6 www.ushio-optosemi.com HL40033G specifications Absolute Maximum Ratings (Tc=25 oC) Note1) Note1) These values should not be exceeded under any conditions conditions. Note2) Operating temperature “Topr” is defined by Case temperature “Tc”. LD chip temperature is getting higher during operation due to its high current density and small package. Thus, without proper heat dissipation less optical output power than specified one could be observed or it results to LD degradation. It is advised that sufficient heat dissipation should be taken not to exceed the maximum operating temperature during actual operation. Optical and Electrical Characteristics (Tc=25 oC) * This specification may change without notice. 7 www.ushio-optosemi.com N New P Product d t New Product HL63193MG Applications Laser projector Show Laser Features Optical output power: 700mW CW Red light emitting: 638 nm typ @ 700mW Low operating current: 820mA typ @ 700mW Low operating voltage: 2.2V typ @ 700mW Small package: 5.6mm Multiple transverse mode TM mode oscillation Optical Output Power vs. Forward Current 700 Tc=0oC 25oC Outp put Power Po (mW) 600 40oC 500 Unit :(mm) 400 Internal circuit 300 (3) (1) 200 100 LD 0 0 500 1000 Forward current If (mA) 1500 (flange) (2) 8 www.ushio-optosemi.com HL63193MG specifications Absolute Maximum Ratings (Tc=25 oC) Note1) Note1) These values should not be exceeded under any conditions. Note2) Operating temperature “Topr” is defined by Case temperature “Tc”. LD chip temperature is getting higher during operation due to its high current density and small package. Thus, without proper heat dissipation less optical output power than specified one could be observed or it results to LD degradation. It iis advised d i d th thatt sufficient ffi i t h heatt di dissipation i ti should h ld be b ttaken k nott to t exceed d the th maximum i operating ti temperature during actual operation. Note3) Pulse condition: Pulse frequency : f ≧ 50Hz, duty ≦ 33% Note4) The long term reliability such as lifetime is not guaranteed. Optical and Electrical Characteristics (Tc=25 oC) 9 www.ushio-optosemi.com Preliminary HL63253MG Under Development Applications Laser projector Show Laser Laser module Features Optical output power: 450mW CW Red light emitting: 638nm typ @ 450mW Low operating current: 600mA typ @ 450mW Low operating voltage: 2.2V typ @ 450mW Small package: 5.6mm Multiple transverse mode TM mode oscillation Unit :(mm) Internal circuit (3) (1) LD (flange) (2) 10 www.ushio-optosemi.com HL63253MG specifications Absolute Maximum Ratings (Tc=25 oC) Note1) Note1) These values should not be exceeded under any conditions. Note2) Operating temperature “Topr” Topr is defined by Case temperature “Tc” Tc . LD chip temperature is getting higher during operation due to its high current density and small package. Thus, without proper heat dissipation less optical output power than specified one could be observed or it results to LD degradation. It is advised that sufficient heat dissipation should be taken not to exceed the maximum operating temperature during actual operation. Optical and Electrical Characteristics (Tc=25 oC) * This specification may change without notice. 11 www.ushio-optosemi.com New Product New Product HL63153AT 0.8+/-0.1 Applications (0.25) Pico projector +0 3.8 -0.025 Features 0.9+/-0.2 Optical output power: 150mW CW Red light emitting: 638 nm typ @ 150mW Low operating current: 230mA typ @ 150mW Low operating voltage: 2.7V typ @ 150mW Small package: 3.8mm Single transverse mode TE mode oscillation 3.0 2.5 3- 0.3+/-0.1 Optical Output Power vs. Forward Current 150 Outtput Power Po (mW) 40oC 1 2 3 3 1 50oC 25oC Tc=0oC 100 1.43+/-0.2 2 60oC Unit :(mm) Internal circuit 1 50 3 LD 0 0 100 200 300 Forward current If (mA) 400 2 (flange) 12 www.ushio-optosemi.com HL63153AT specifications Absolute Maximum Ratings (Tc=25 oC) No . Items Symbol Ratings Unit 1 Optical output power(1) (-10 to +50oC) Po(1) 150 mW 2 Optical output power(2) (+50 to +60oC) Po(2) 120 mW 3 LD reverse voltage VR(LD) 2 V 4 Operating temperature Topr -10 ~ +60 ℃ 5 Storage temperature Tstg -40 ~ +85 ℃ Note Operating temperature “Topr” is defined by Case temperature “Tc”. High increase in temperature of LD chip itself is expected during operation due to high current density and small package. Thus, without proper heat dissipation, it is observed that no specific output power is achieved or it results to LD degradation. It is advised that sufficient measure of heat dissipation should be taken so that LD’s maximum operating temperature is not exceeded during actual operation operation. Optical and Electrical Characteristics (Tc=25 oC) No. Items Symbol Test condition Min. Typ. Max. Unit 1 Threshold current Ith - - 75 100 mA 2 Operating current Iop Po=150mW Po 150mW - 230 300 mA 3 Operating voltage Vop Po=150mW - 2.7 3.1 V 4 Beam divergence parallel to the junction Po=150mW, FWHM 5 8.5 13 ° 5 Beam divergence perpendicular to th junction the j ti Po=150mW, FWHM 13 18 23 ° 6 Lasing wavelength λp Po=150mW 632 638 643 nm Note 13 www.ushio-optosemi.com Laser Diodes Wavelength Optical Power Part Number AC Connection CC Connection Other Connection New 404nm HL40041MG 150mW New HL40053MG(FN) 500mW UD 405nm 1,000mW HL40033G(FN) 633nm 100mW HL63163DG(FN) 637nm 7mW HL63102MG 120mW HL63142DG HL63101MG HL6388MG(LN)) 250mW 638nm 5mW HL6312G 7mW HL6354MG HL6355MG 10mW HL6320G HL6319G 15mW HL6322G HL6321G HL63603TG(FN) 120mW New HL63153AT(FN) 150mW UD AC Connection: LD: Anode common, PD: Cathode Common BC Connection: LD: Cathode common, PD: Cathode Common CC Connection: LD: Cathode common, PD: Anode Common Under development FN Connection: LD electrode is isolated from stem (common), PD: none LN Connection: LD: Cathode common, PD: none 14 www.ushio-optosemi.com Laser Diodes Wavelength Optical Power Part Number AC Connection CC Connection Other Connection UD 638nm HL63253MG(FN) 450mW New HL63193MG(FN) 700mW 12mW HL6358MG HL6359MG 12mW HL6396MG HL6395MG 25mW HL6360MG HL6361MG 25mW HL6398MG HL6397MG 35mW HL6323MG 640nm 45mW HL6362MG HL6363MG 642nm 65mW HL6364DG HL6365DG 90mW HL6366DG HL6367DG 639nm 60 ℃ operation 60 ℃ operation 150mW HL6385DG(LN) 648nm 150mW HL65014DG(LN) 658nm 50mW* HL6501MG UD AC Connection: LD: Anode common, PD: Cathode Common BC Connection: LD: Cathode common, PD: Cathode Common CC Connection: LD: Cathode common, PD: Anode Common Under development FN Connection: LD electrode is isolated from stem (common), PD: none LN Connection: LD: Cathode common, PD: none www.ushio-optosemi.com 15 Laser Diodes Wavelength Optical Power Part Number AC Connection 660nm 130mW CC Connection Other Connection HL65051DG HL6544FM(FN) HL6545MG(LN) 300mW* 670nm 10mW HL6714G 10mW HL6748MG 15mW HL6756MG 685nm 55mW HL6750MG 690nm 35mW HL6738MG 705nm 50mW HL7002MG HL7001MG 730nm 50mW HL7302MG HL7301MG 830nm 50mW HL8337MG HL8338MG 852nm(±10) 50mW HL8340MG HL8341MG 852nm(±4) 50mW HL8342MG HL8343MG * Pulse optical power AC Connection: LD: Anode common, PD: Cathode Common BC Connection: LD: Cathode common, PD: Cathode Common CC Connection: LD: Cathode common, PD: Anode Common FN Connection: LD electrode is isolated from stem (common), PD: none LN Connection: LD: Cathode common, PD: none 16 www.ushio-optosemi.com Product Map 1000 HL40033G Direct Imaging BioEngineering 500 Po : Maximum Ratings pulse : pulse optical power HL63193MG Mass Production New product HL40053MG Under development HL63253MG CTP Display 300 HL6388MG Optical O Output Powe er, Po(CW) (m mW) Bio-medical HL6545MG pulse Sensor 200 HL63133DG HL40041MG HL63153AT HL6385DG HL63603TG HL63142DG HL63163DG 100 HL65014DG HL65051DG HL6544FM HL6366DG Medical Sensor Laser Aiming Night Vision HL6364DG HL6750MG 50 HL7302MG HL6362MG HL6323MG HL8342MG HL7002MG HL8340MG HL8337MG HL6738MG HL6501MG 30 HL6360MG,HL6398MG 20 Marker Leveler Sensor Multi beam LD for high g speed p p printing g HL6756MG HL6321G Printer HL6358MG,HL6396MG 10 HL6714G,HL6748MG HL6319G HL6354MG,HL63102MG 5 HL6312G 3 400- 415 633 - 645 650 - 665 670 - 690 700-730 830-850 Lasing Wavelength (nm) 17 www.ushio-optosemi.com Product Line Up 18 www.ushio-optosemi.com Product Line Up 19 www.ushio-optosemi.com Part Numbering Example: HL6354MG-A HL 63 54 MG –A (a) (b) (c) (d) (e) (a) HL: UOS Laser Diode (b) 63: Wavelength: (first 2-number of wavelength) -63: 635nm, 65: 655~660nm, 67: 670~680nm, 70: 705nm, 73: 730nm, 83: 830nm (or 850nm) (c) 54: Serial Number (d) MG: Package Type (CAN package) - G: 9.0mm, MG: 5.6mm(short can) , DG: 5.6mm (tall can), TG: 3.8mm (short can) (e) -A: RoHS compliant* -A: RoHS compliant, <(Non; without –A)): No RoHS compliant> * All of current available UOS are RoHS compliant. CC Connection Example: HL63101MG HL 63 10 1 MG (a) (b) (c) (d) (e) 3 1 1 PD LD 2 (flange) (a) HL: UOS Laser Diode (b) 63: Wavelength: (first 2-number of wavelength) 40: 404nm, 63: 635nm, 65: 655~660nm, 67: 670~680nm, 70: 705nm, 73: 730nm, 83: 830nm (or 850nm) (c) 10: Serial Number (d) 1 : Internal Circuit (assigned either 1, 2, 3 or 4) ((e)) MG: Package g Type yp (CAN ( package) p g ) - G: 9.0mm, MG: 5.6mm (short can), DG: 5.6mm (tall can), TG: 3.8mm (short can), AT: 3.8mm (tall can) * All products with new numbering are RoHS compliant. (Therefore, No “-A”. ) AC Connection 2 1 3 PD LD 2 (flange) FN Connection 3 3 1 LD 2 (flange) LN Connection 1 3 4 LD 2 (flange) 20 www.ushio-optosemi.com Marking For larger CAN packaged which diameter is 5.6mm or lager, 7~8 letters combination of numerical and alphabetical are laser marked on cap. 1st line : 1st and d 2nd columns l : Product P d t identification id tifi ti code d if code is one character, 1st line is 3 characters. 3rd column : Year code The year code is the last number of the produced year. (ex; “3" means the year 2013) th 4 column : Month code The month code is marked with alphabet character. (see Table-1) 2nd line : 5th to 8th column : UOS internal management code For smaller CAN packaged which diameter is 3.8 3 8 mm mm, 6 letters combination of numerical and alphabetical are laser marked on cap. 1st line : 1st column and 2nd column : Product identification code 3rd column : Year code The year code is the last number of the produced year. (ex; ( “1" means the th year 2011) 2nd line : 4th column : Month code The month code is marked with alphabet character. (see Table-1) 1 2 3 4 5 6 5th to 6th column : UOS internal management code table-1) Month code Month 1 2 3 4 5 6 7 8 9 10 11 12 Code A B C D E F G H J K M L 21 www.ushio-optosemi.com Testing Data Testing data are available upon request with additional charge. Ex. HL63142DG Laser Diode LASER DIODE 1pc/bag 90mm 40mm TYPE No. Serial No. Test condition Ith = 50.05 (mA) , SPECT = 637.7 637 7 (nm) ( ), V.ANG = 18.2 (deg) , Po = 100 (mW) Eta = 1.103 (mW/mA) I = 0.343 Is 0 343 ((mA) A) * H.ANG =8.6 (deg) (Attached data) Optical power Threshold current Slope efficiency Lasing wavelength Monitor current* Beam divergence(perpendicular) Beam divergence(parallel) ・・・・・Po ・・・・・Ith ・・・・・Eta ・・・・・SPECT ・・・・・Is ・・・・・V.ANG ・・・・・H.ANG * In case of providing built-in photodiode 90mm 96mm 44mm 10pcs/box (Marking) (M ki ) UOS part number, quantity and mark are indicated by bar code on a label. (Note) The position of label and the format of label are subject to change without any notice. 22 www.ushio-optosemi.com Information Company p y information August. 06. 2014 USHIO INC. (TOKYO: 6925) (President and CEO: Shiro Sugata), announced today that its wholly owned subsidiary USHIO OPTO SEMICONDUCTORS, INC., headquartered in Tokyo, has signed a demerger agreement with Oclaro Japan, Inc. (President: Tadayuki Kanno), a wholly owned subsidiary of Oclaro, Inc. (CEO: Greg Dougherty). Through this agreement, USHIO OPTO SEMICONDUCTORS will acquire the LED, red, violet and part of the infrared laser diode business from Oclaro Japan. The acquired activity is primarily located in Komoro, Japan and includes approximately 80 employees. * please refer to more detail at the following address. http://www.ushio.co.jp/en/NEWS/ir/20140806_e.html According to the closing of transaction, UOS started the business from October. 27. 2014 October. 27. 2014 USHIO OPTO SEMICONDUCTORS, INC. opened Website. The following is Website address. It will be helpful your business. http://www.ushio-optosemi.com 23 www.ushio-optosemi.com 24 www.ushio-optosemi.com Safety Considerations Avoid direct eye y exposure p to high g p power laser beams emitted from laser diodes. Even though g laser light g is barely visible and/or invisible to the human eye, it can be quite harmful. As a result, avoid looking directly into a laser diode or collimated beam along its optical axis when the diode is activated. Use a phosphor plate or infrared sensitive camera to determine the optical path. USHIO OPTO SEMICONDUCTORS, INC. certifies compliance with US Safety Regulations(21 CFR 1040.10) on laser products as stipulated by the U.S. Department of Health and Human Services. Notes regarding the document 1. USHIO OPTO SEMICONDUCTORS, INC.(UOS) neither warrants the information contained In this document nor grants a license express or implied, to any of its, or any third party’s, patent, copyright, trademark, or other intellectual property rights with respect to the information contained in this document. UOS accepts no responsibility in connection with or related to any such third party’s right, including, but not limited to, intellectual property rights, in connection with use of the information contained in this document. 2 UOS makes 2. k every attempt tt t to t ensure that th t its it products d t are off high hi h quality lit and d reliability. li bilit However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support applications. 3. Design your application so that the product is used within the ranges specified by UOS, particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. UOS bears no responsibility for failure or damage when used beyond the specified range. Even within the specified range, range please consider foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures, such as fail-safes, such that equipment incorporating these product does not cause bodily injury, fire or other consequential damage due to operation of the UOS product. 4. This product is not designed to be radiation resistant. 5. Reproduction or duplication, in any form, in whole or in part, of this document without the express written approval of UOS is strictly prohibited. 6. Please contact our sales office for any questions regarding this document or UOS products. Cautions 1. Laser light, direct or indirect, can be harmful to the human body, especially to the eye. 2. The laser beam should be observed or adjusted through infrared cameras or similar equipments. 3. These products (excluding violet laser diodes) contain gallium arsenide (GaAs), which may seriously endanger your health, even at very low doses. Please avoid any activities which may create GaAs powder or gas gas, such as disassembly or performing chemical experiments experiments. 4. When disposing of product, please follow all applicable local laws and regulations. 25 www.ushio-optosemi.com
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