1. No category

EFFICIENCY
提升轉換效率
PHOTOVOLTAIC METALLIZATIONS
太陽能導電漿料
目標為於
年達到
的電池轉換效率
DuPont Solamet PV3Nx silver/aluminum paste for p-type emitter
™
®
杜 邦 Solamet PV3Nx 銀 鋁 漿 – 適 用 於 P型 射 極
™
®
Fineline printability (for gridlines with screen printing)
細線印刷能力(使用於網版印刷)
Fire-through passivation layer
透過燒結穿透鈍化層
Low gridline resistivity (high conductivity)
較低的導線電阻 (較好的導電性)
Co-fireable with rear side contacts
可與背面導電漿料共燒
Good solderability and adhesion
好的焊接性與黏著力
DuPont Solamet complete metallization package for higher efficiency
®
杜邦™ Solamet 為高效率電池打造完整的金屬化方案
™
®
Solamet® PV3Nx or PVD2x (Layer2)
Solamet® PV3Nx (Layer1)
985
965
1
945
0
925
2
905
5
885
3
865
10
4
845
Typical firing window
5
825
Solamet® PV17x
15
Gridline resistivity**
805
Rear passivation
(e.g. SiNx)
20
Contact resistivity*
785
n+-Si (P-doped BSF)
6
25
(uohm*cm)
n-Si (base)
Phosphorus BSF
DuPont™ Solamet® PV3Nx on 60Ω B-doped emitter
ρ c (mohm*cm2)
p+-Si (B-doped emitter)
Boron emitter
Suitable for Single or
double printing
可適用於單層或雙層印刷
785
805
825
845
865
885
905
925
945
965
985
Front passivation
(e.g. SiNx/SiO2)
Contact resistivity on B-doped emitter*
在硼摻雜電極的接觸電阻比較
10
9
30-40%
improvement
8
ρ c (mohm*cm2)
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Low contact resistivity on B-doped emitter layer
在硼摻雜射極層形成較低的接觸電阻
7
6
5
4
Peak SET T(˚C)
825
845
865
The new generation Solamet® PV3N2
provides 30-40% better contact resistivity on
®
B-doped emitter compared to Solamet PV3N1.
新一代Solamet® PV3N2銀鋁漿較Solamet® PV3N1，
在硼摻雜射極層減少30-40%的接觸電阻
3
2
1
0
PV3N1
PV3N2
* Measured by TLM.
** Rgl measured on fired-through contacts. Apparent values calculated assuming uniform line width and height. Crosssectional areas of fired gridlines measured using confocal microscope.