1. No category

The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room A (Crystal Ballroom A)
Session Title:
[MOA1] 01. Growth and Characterization : Al-containing Structures
Date:
May 18, 2015 (Monday)
Time:
13:30 ~ 14:55
[MOA1-1]
13:30 ~ 13:55
[Invited] Epitaxial Growth, Characterization, and Devicesof InAlN
Jae-Hyun Ryou
[MOA1-2]
13:55 ~ 14:10
Electrical properties of extremely low-resistivity and high-carrierconcentration Si-doped AlGaN with low AlN molar fraction
Kunihiro Takeda, Kazuki Mori, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya
Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
[MOA1-3]
14:10 ~ 14:25
High p-typeconductivity implement in high Al content AlGaN via
introducingthree-dimensional Mg-doped superlattices
Tongchang Zheng, Wei Lin, Shuping Li, and Junyong Kang
[MOA1-4]
14:25 ~ 14:40
Optimization of growth condition of conductiveAlGaN layer with
high Al content
Toshiki Yasuda, Syouta Katsuno, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi
Kamiyama, Isamu Akasaki, and Hiroshi Amano
[MOA1-5]
14:40 ~ 14:55
Growth of AlN layer on sputtered AlN template substrate by
hydride vapor phase epitaxy
Shinya Tamaki, Daiki Yasui, Hideto Miyake, Kazumasa Hiramatsu, Motoaki
Iwaya, Isamu Akasakai, and Hiroshi Amano
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room B (Crystal Ballroom B)
Session Title:
[MOB1] 04. Fabrication of Hybrid Structures
Date:
May 18, 2015 (Monday)
Time:
13:30 ~ 14:50
[MOB1-1]
13:30 ~ 13:55
[Invited] Ultra low threshold lasing from III-nitride nano/micro
structures
Tao Wang
[MOB1-2]
13:55 ~ 14:20
[Invited] Feasibility of Inorganic Flexible Devices Prepared by
Pulsed Sputtering
Hiroshi Fujioka, Kohei Ueno, Atsushi Kobayashi, and Jitsuo Ohta
[MOB1-3]
14:20 ~ 14:35
Fabrication and Performance of GaN-based UV-LEDs on AlSi
Substrate
Ray-Hua Horng, Guan-Cheng Chen, Sin-Liang Ou, and Dong-Sing Wuu
[MOB1-4]
14:35 ~ 14:50
High Color Rendering Index HybridIII-Nitride/Nanocrystals White
Light-Emitting Diodes
Bin Liu, Zhe Zhuang, Xu Guo, Fengrui Hu, Yi Li, Tao Tao, Jiangping Dai, Ting
Zhi, Zili Xie, Dunjun Chen, Peng Chen, Haixiong Ge, Xiaoyong Wang, Min
Xiao, Rong Zhang, and Youdou Zheng
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room A (Crystal Ballroom A)
Session Title:
[MOA2] 07. Luminescence Properties
Date:
May 18, 2015 (Monday)
Time:
15:10 ~ 16:30
[MOA2-1]
15:10 ~ 15:35
[Invited]
Plasmonics
Towards
High-Efficiency
Light-
EmittingDevices
Koichi Okamoto
[MOA2-2]
15:35 ~ 16:00
[Invited] Complex Nitrogen Doping for P-type ZnO
Dezhen Shen, Zhenzhong Zhang, and Lei Liu
[MOA2-3]
16:00 ~ 16:15
TemperatureDependent
Al0.25Ga0.75N/AlN/GaNand
Spontaneous
Polarization
in
Al0.83In0.17N/AlN/GaN
Heterostructures
Yong Xiang, Tongjun Yu, Xingbin Li, Fujun Xu, Xuelin Yang, Zhijian Yang, Bo
Shen, and Guoyi Zhang
[MOA2-4]
16:15 ~ 16:30
Study of luminescence properties in graphenequantum dots
prepared by graphite intercalate compound and their optical
deviceapplication
Min-Ho Jang, Sung Ho Song, Jin Chung, Sung Hawn Jin, Bo Hyun Kim,
Seung-Hyun Hur, Seunghyup Yoo, Seokwoo Jeon, and Yong-Hoon Cho
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room B (Crystal Ballroom B)
Session Title:
[MOB2] 05. Devices for Energy Harvesting
Date:
May 18, 2015 (Monday)
Time:
15:10 ~ 16:30
[MOB2-1]
15:10 ~ 15:35
[Invited]
Nano-helical
photoelectrodes
for
efficient
energy
harvesting applications
Jong Kyu Kim
[MOB2-2]
15:35 ~ 16:00
[Invited] Solar Energy Harvesting Utilizing Low Dimensional
Nanostructures
Yu-Lun Chueh
[MOB2-3]
16:00 ~ 16:15
Characteristic of nitrogen doping reduced graphene oxide (NrGO) for using photovoltaic device
min Han, Beo Deul Ryu, Jung Hwan Hyung, Kang Bok Ko, Ko Ku Kang,
Young Jae Park, and Chang Hee Hong
[MOB2-4]
16:15 ~ 16:30
Efficient doping of graphene by MoO3 and its application to
graphene-based solar cells
Chandramohan Samygounder, Tae Hoon Seo, Janardhanam Vallivedu, JungHwan Hyung, Chel-Jong Choi, Chang-Hee Hong, and Eun-Kyung Suh
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room A (Crystal Ballroom A)
Session Title:
[TUA1] 01. Growth and Characterization : Defect Analysis and Control
Date:
May 19, 2015 (Tuesday)
Time:
09:00 ~ 10:25
[TUA1-1]
09:00 ~ 09:25
[Invited]
Multi-scale
characterization
of
defects
in
nitride
semiconductor materials
Akira Sakai
[TUA1-2]
09:25 ~ 09:40
Wafer bowing reduction of GaN heteroepitaxial grown on Si
(111) substrate with graphene oxide pattern
Chang Hee Hong, Tran Viet Cuong, and Jin Joo
[TUA1-3]
09:40 ~ 09:55
Effect of annealing on the defect related emission in GaN grown
on Si substrate
Hiroyuki Kobayashi, Takanori Yagi, Ryosuke Tanabe, Takumi Kanematsu,
Hiroyuki Iwata, Nobuhiko Sawaki, Masashi Irie, Yoshio Honda, and Hiroshi
Amano
[TUA1-4]
09:55 ~ 10:10
Growth of AlGaN/GaN heterostructures on Si using multiple
step-graded AlGaN layers and one AlGaN superlattice as buffer
layer
Jinyu Ni
[TUA1-5]
10:10 ~ 10:25
Epitaxialgrowth of m-plane (10-10) GaN films on (100) γ-LiAlO2
substrates by chemicalvapor deposition
Meng Chieh Wen, Chenlong Chen, Chun Yu Lee, and Mitch M.C. Chou
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room B (Crystal Ballroom B)
Session Title:
[TUB1] 02. Optoelectronic Devices : Application of Plasmonic Structure
Date:
May 19, 2015 (Tuesday)
Time:
09:00 ~ 10:25
[TUB1-1]
09:00 ~ 09:25
[Invited] Progress of GaN-based Terahertz Quantum Cascade
Laser
Hideki Hirayama, Wataru Terashima, Shiro Toyoda, and Norihiko Kamata
[TUB1-2]
09:25 ~ 09:40
Optical properties of modified light-emittingdiodes structures
using localized surface plasmons
Jin Hyeon Yun, Han Su Cho, Kang Bin Bae, and In Hwan Lee
[TUB1-3]
09:40 ~ 09:55
A novel plasmonic nanostructure for nitride LED application
Dong-Sing Wuu, Shih-Hao Chuang, Ching-Ho Chen, and Ray-Hua Horng
[TUB1-4]
09:55 ~ 10:10
Enhanced characteristics of InGaN/GaN green light-emitting
diodes with porous structures by photo-electrochemical etching
Han-Su Cho, Kyeong-Seob Kwon, Myeong-Ji Dong, Jin-Woo Ju, JongHyeob Baek, and In-hwan Lee
[TUB1-5]
10:10 ~ 10:25
Cathodoluminescenceenhancement
coupling
of
multiple
quantum
of
wells
green
LED
withlocalized
through
surface
plasmon in Ag hexagonal arrays
Shuang Jiang, Zhizhong Chen, Yulong Feng, Qianqian Jiao, Junze Li,
Shengxiang Jiang, Jian Ma, Yifan Chen, Tongjun Yu, and Guoyi Zhang
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room A (Crystal Ballroom A)
Session Title:
[TUA2] 01. Growth and Characterization : Optical and Structural Properties
Date:
May 19, 2015 (Tuesday)
Time:
11:00 ~ 12:25
[TUA2-1]
11:00 ~ 11:25
[Invited]
In
situ
X-ray
diffraction
analysis
of
GaInN/GaN
heterostructure (Tentative)
Motoaki Iwaya
[TUA2-2]
11:25 ~ 11:40
Optical
polarization
properties
of
nonpolar
InGaN
films
measured by polarization-resolved photoluminescence excitation
spectroscopy
Ryohei Maeda, Shigeta Sakai, Atsushi A. Yamaguchi, Kaori Kurihara, and
Satoru Nagao
[TUA2-3]
11:40 ~ 11:55
Polarity inversion of GaN by group-III source preflow in metalorganic chemical vapor deposition
Chengguo Li, Hongfei Liu, and Soo Jin Chua
[TUA2-4]
11:55 ~ 12:10
Energy Migration between Eu Luminescent Sites in Eu-Doped
GaN
Yasufumi FUJIWARA, Ryuta WAKAMATSU, Dolf TIMMERMAN, and Atsushi
KOIZUMI
[TUA2-5]
12:10 ~ 12:25
Growth and characterization of InN on α-In2O3/sapphire by RFMBE
Nao Masuda, Akira Buma, Tsutomu Araki, Yasushi Nanishi, Masaya Oda, and
Toshimi Hitora
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room B (Crystal Ballroom B)
Session Title:
[TUB2] 02. Optoelectronic Devices : Carrier Dynamics
Date:
May 19, 2015 (Tuesday)
Time:
11:00 ~ 12:25
[TUB2-1]
11:00 ~ 11:25
[Invited]
Advances
on
Visible-blind
and
Solar-blind
Photodetectors based on Wide Bandgap Semiconductors
Hai Lu, dunjun Chen, Rong Zhang, and Youdou Zheng
[TUB2-2]
11:25 ~ 11:40
Carrier Dynamics in InGaN-Based Light-Emitting Diodes Studied
by Differential Carrier Lifetimes
Dong-Soo Shin, Dong-Pyo Han, Young-Jin Kim, and Jong-in Shim
[TUB2-3]
11:40 ~ 11:55
Change
in
Forward-Voltage
Characteristics
Due
to
Carrier
Overflow in InGaN-Based Light-Emitting Diodes
Dong-Pyo Han, Hyunsung Kim, Dong-Soo Shin, and Jong-in Shim
[TUB2-4]
11:55 ~ 12:10
Alleviated efficiency droop in InGaN/GaN multiple quantum wells
light-emitting diodes by trapezoidal quantum barriers
Sang-Jo Kim, Seong-Ju Park, Kwang Jae Lee, and Jae-Joon Kim
[TUB2-5]
12:10 ~ 12:25
U-shape phenomenon in theefficiency-versus-current curves in
AlGaN-based deep-ultraviolet light-emittingdiodes
Jun-Hyuk Park, Guan-Bo Lin, Dong Yeong Kim, Jong Won Lee, Jaehee Cho,
Jungsub Kim, Jong Kyu Kim, and E. Fred Schubert
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room A (Crystal Ballroom A)
Session Title:
[TUA3] 01. Growth and Characterization : Various Substrates
Date:
May 19, 2015 (Tuesday)
Time:
13:30 ~ 14:55
[TUA3-1]
13:30 ~ 13:55
[Invited] Growth and characterization of low-dislocation density
2~4inch GaN substrate by HVPE (Tentative)
Ke Xu
[TUA3-2]
13:55 ~ 14:10
A new approach to compliant substrate for epitaxial growth of
GaN
Daeyoung Moon, Jeonghwan Jang, Daehan Choi, In-Su Shin, Donghyun
Lee, Dukkyu Bae, Yongjo Park, and Euijoon Yoon
[TUA3-3]
14:10 ~ 14:25
Extremely smooth surface and strain relaxation in GaNepilayers
grown on hemispherical nanoscale patterned sapphire substrate
by MOCVD
Junze Li and Zhizhong Chen
[TUA3-4]
14:25 ~ 14:40
Growth of high quality and less strained GaN on cavity
engineered sapphire substrate
Jeonghwan Jang, Daeyoung Moon, HyoJeong Lee, Donghyun Lee, Daehan
Choi, Dukkyu Bae, Hwankuk Yuh, youngboo moon, Yongjo Park, and
Euijoon Yoon
[TUA3-5]
14:40 ~ 14:55
InGaN-basedlight-emitting
diodes
with
pit
expansionlayers
composed of only SL ormiddle-temperature-grown GaN layer.
Kohei Sugimoto, Narihito Okada, and kazuyuki Tadatomo
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room B (Crystal Ballroom B)
Session Title:
[TUB3] 02. Optoelectronic Devices : Improvement of Light Extraction
Date:
May 19, 2015 (Tuesday)
Time:
13:30 ~ 14:55
[TUB3-1]
13:30 ~ 13:55
[Invited]
Widegap
semiconductor
lasers
with
micro/nano-
scalearchitectures
Tien-chang Lu
[TUB3-2]
13:55 ~ 14:10
Study on the irradiative recombination and light extraction from
the GaN-based nanorod array LEDs
Qianqian Jiao, Zhizhong Chen, Yulong Feng, Shuang Jiang, Junze Li,
Shengxiang Jiang, Shunfeng Li, and Guoyi Zhang
[TUB3-3]
14:10 ~ 14:25
Enhanced light extraction efficiency for GaN-based LEDs by
nano-void structured reflector
Semi Oh, Kab Ha, Kwang Jae Lee, Sang-Jo Kim, Jae-Joon Kim, Kyoung-Kook
Kim, and Seong-ju Park
[TUB3-4]
14:25 ~ 14:40
High-performance photoconductivity and electrical transport of
ZnO/ZnS core/shell nanowires for multifunctional nanodevices
Sehee Jeong, Minhyeok Choe, Jang-Won Kang, Min Woo Kim, Wan Gil
Jung, Young-Chul Leem, Jaeyi Chun, Bong-Joon Kim, and Seong-Ju Park
[TUB3-5]
14:40 ~ 14:55
Fabrication of GaN light-emitting diodes withreduced graphene
oxide current-spreading layer
Beo Deul Ryu, Min Han, Kang Bok Ko, Young Jae Park, Jung-Hwan Hyung,
Ko Ku Kang, Jaehee Cho, and Chang-hee Hong
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room A (Crystal Ballroom A)
Session Title:
[TUA4] 01. Growth and Characterization : Special Materials and Structures
Date:
May 19, 2015 (Tuesday)
Time:
15:10 ~ 16:25
[TUA4-1]
15:10 ~ 15:25
Growth and optical properties of Zn1-xCdxO for theapplication
in
the
fabrication
of
photonic
devices
covering
full
visiblespectrum
Wu-Ching Chou, Kun-Feng Chien, Ling Lee, and Chin-Hau Chia
[TUA4-2]
15:25 ~ 15:40
Growth of semi-insulating GaN layer for HEMT structure by
eliminating degenerate layer at GaN/sapphire interface
In-Su Shin, Donghyun Kim, Donghyun Lee, Yumin Koh, Chan Soo Shin,
Yongjo Park, and Euijoon Yoon
[TUA4-3]
15:40 ~ 15:55
Polarization and Interface Engineering in ZnMgO/ZnO polar
oxide heterostructures
Jiandong Ye, Shulin Gu, Kie Leong TEO, Rong Zhang, and Youdou Zheng
[TUA4-4]
15:55 ~ 16:10
Sidewall overgrowth of GaN on GaN nanopillars
ming xiao, Jincheng Zhang, and Yue Hao
[TUA4-5]
16:10 ~ 16:25
Molecular beam epitaxy of In(Ga)Nmonolayer in GaN matrix
Xinqiang Wang, Xiantong Zheng, Dingyu Ma, Ping Wang, Bo Shen, Tobias
Schulz, and Martin Albrecht
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room B (Crystal Ballroom B)
Session Title:
[TUB4] 02. Optoelectronic Devices : UV LEDs and Stress Control
Date:
May 19, 2015 (Tuesday)
Time:
15:10 ~ 16:25
[TUB4-1]
15:10 ~ 15:25
High efficiency deep ultraviolet multiplequantum wells using
polarization screening effect
Jinwan Kim, Minhwan Jeon, Jaedo Pyeon, Daemin Choe, Eunyoung Shin,
and Okhyun Nam
[TUB4-2]
15:25 ~ 15:40
Enhanced Light Extraction and ElectricalProperties of DeepUltraviolet
Light-Emitting
Diodes
by
UtilizingTransverse-
Magnetic-Dominant Emission
Jong Won Lee, Jun Hyuk Park, Dong Yeong Kim, and Jong Kyu Kim
[TUB4-3]
15:40 ~ 15:55
Vertical integration of heterogeneous light-emitting diodes by
wafer bonding and transfer printing
Jaeyi Chun, Kwang Jae Lee, Young-Chul Leem, Won-Mo Kang, Tak Jeong,
Jong Hyeob Baek, Hyung Joo Lee, Bong-Joong Kim, and Seong-Ju Park
[TUB4-4]
15:55 ~ 16:10
Reduction of stress on GaN epitaxial layer byusing SiO2 thin film
on the backside of sapphire substrate
Seungmin Lee, Jonghak Kim, Seunghyun Moon, Kisu Joo, Jaehoon Ham,
Yoon-Kyu Song, Jong-In Shim, Yongjo Park, and Euijoon Yoon
[TUB4-5]
16:10 ~ 16:25
Implementation of functional silicate-sphere lithography for
fabrication of GaN-based light emitting diodes on 8 inch Si
Wafer
Hooyoung SONG, Minwoo Lee, Seonock Kim, Ki-Seong Jeon, Jin Hyoun
Joe, Eun Ah Lee, Hwanjoon Choi, Junho Sung, Min-Gu Kang, Yoon-Ho Choi,
and Jeong Soo Lee
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room A (Crystal Ballroom A)
Session Title:
[WEA1] 03. Electronic Devices : HEMTs & FETs
Date:
May 20, 2015 (Wednesday)
Time:
09:00 ~ 10:35
[WEA1-1]
09:00 ~ 09:25
[Invited] The Stability of High Voltage AlGaN/GaN HEMTs
Chih-Fang Huang
[WEA1-2]
09:25 ~ 09:50
[Invited] GaN-based Metal-oxide-semiconductor High-electron
Mobility Transistors
Ching-Ting Lee
[WEA1-3]
09:50 ~ 10:05
Monolithic Integration of AlGaN/GaN Switching FETs andDiodes
Sunghoon Park, Jaegil Lee, Sangwoo Han, and Hoyoung Cha
[WEA1-4]
10:05 ~ 10:20
High Performance AlGaN/GaN MIS-HEMTs with PEALD-Grown
AlN insulator and High-Power Remote Plasma Treatment
Jiejie Zhu, Xiaohua Ma, Weiwei Chen, Bin Hou, Jincheng Zhang, and Yue
Hao
[WEA1-5]
10:20 ~ 10:35
Low-temperature
Au-free
Ohmic
Contact
for
AlGaN/GaN
Heterostructure
Jae-Gil Lee, Hyun-Seop Kim, Donghwan Kim, Sang-Woo Han, Kwang-Seok
Seo, and Jae-Gil Lee
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room B (Crystal Ballroom B)
Session Title:
[WEB1] 06. Nanostructures I
Date:
May 20, 2015 (Wednesday)
Time:
09:00 ~ 10:40
[WEB1-1]
09:00 ~ 09:25
[Invited] Nanoscale Characterization of Structural andOptical
Properties
of
Nitride
Nanostructures
Using
Scanning
Transmission ElectronMicroscopy Cathodoluminescence
Juergen Christen, Frank Bertram, Marcus Mueller, and Peter Veit
[WEB1-2]
09:25 ~ 09:40
Column diameter dependence of emission mechanisms in
InGaN/GaN single quantum wells nanocolumns
Rin Miyagawa, Takao Oto, Yutaro Mizuno, Tatsuya Kano, Jun Yoshida, and
Katsumi Kishino
[WEB1-3]
09:40 ~ 09:55
Nanoheteroepitaxy of GaN on AlN/Si(111) nanorods fabricated
by nanosphere lithography
Donghyun Lee, In-Su Shin, Jin Lu, Donghyun Kim, Yongjo Park, and Euijoon
Yoon
[WEB1-4]
09:55 ~ 10:10
Fabrication of Ultraviolet Emission Device Using GaNNano-needle
Field Emitters
Jong-Hoi Cho, Je-Hyung Kim, Ju-Hyung Ha, Jun-Mok Ha, Sung-Oh Cho,
Won-Jae Lee, and Yong-Hoon Cho
[WEB1-5]
10:10 ~ 10:25
The Light Efficiency Enhancement withNanotube and Nanorod
GaN-based MQWs by Nanoimprint Lithography
Tongxing Yan, Shengxiang Jiang, Qianqian Jiao, Qingbin Ji, and Xiaodong
Hu
[WEB1-6]
10:25 ~ 10:40
Intrinsic electronic properies of non-polar GaN and InN surfaces
Holger Eisele, Michael Schnedler, Andrea Lenz, Verena Portz, Liverios
Lymperakis, Jörg Neugebauer, and Philipp Ebert
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room A (Crystal Ballroom A)
Session Title:
[WEA2] 03. Electronic Devices : Novel Heterostructures
Date:
May 20, 2015 (Wednesday)
Time:
11:00 ~ 12:20
[WEA2-1]
11:00 ~ 11:25
[Invited]
GaN-based
novel
heterostructures
and
electronic
devices
Jincheng Zhang, Jiaduo Zhu, Junshuai Xue, Jinfeng Zhang, Xiaohua Ma, and
Yue Hao
[WEA2-2]
11:25 ~ 11:50
[Invited] Not Submitted Yet
Kwang-Seok Seo
[WEA2-3]
11:50 ~ 12:05
Fabrication
and
characterization
of
p-Si/n-CuInO
nano-
heterojunction by solution basedmethods
Mageshwari Kandhasamy and Jinsub Park
[WEA2-4]
12:05 ~ 12:20
GaAs pHEMT HeterogeneousIntegration on Silicon Substrate by
Epitaxial Layer Transfer Technology
LiShu Wu, Yan Zhao, Wei Cheng, and TangSheng Chen
The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room B (Crystal Ballroom B)
Session Title:
[WEB2] 06. Nanostructures II
Date:
May 20, 2015 (Wednesday)
Time:
11:00 ~ 12:25
[WEB2-1]
11:00 ~ 11:25
[Invited] Classical and Quantum Light Generation from Nitride
Semiconductor Nanostructures
Yong-Hoon Cho
[WEB2-2]
11:25 ~ 11:40
Large-size monolayer hexagonal BN synthesis and transfer as
self-release interlayer for GaN wafer
Chenping Wu, Abdul Majid Soomro, Hongmei Xu, Huachun Wang, Jiejun
Wu, Xu Yang, Junyong Kang, and Duanjun Cai
[WEB2-3]
11:40 ~ 11:55
Bloch surface plasmon enhanced blue emission fromInGaN/GaN
light-emitting diode structures with Al-coated GaN nanorods
Guogang Zhang, Zhe Zhuang, Xu Guo, Fang-Fang Ren, Bin Liu, Haixiong
Ge, Zili Xie, Ling Sun, Ting Zhi, Tao Tao, Yi Li, Youdou Zheng, and Rong
Zhang
[WEB2-4]
11:55 ~ 12:10
Growth
and
characterization
of
nanocolumns
arranged
in
honeycomb and kagome lattice
Kai Motoyama, Shunsuke Ishizawa, Ai Yanagihara, Daijiro Shiba, and
Katsumi Kishino
[WEB2-5]
12:10 ~ 12:25
Study on morphology and shape control ofvolcano-shaped nanopatterned sapphire substrate fabricated by nano-imprintingand
wet etching
Shengxiang Jiang, Tongxing Yan, Qianqian Jiao, Zhizhong Chen, Tongjun Yu,
and Guoyi Zhang
The 7th Asia-Pacif
A
fic Worksh
hop on Wid
degap Sem
miconductors
AP
PWS 2015
2 5
Ma
ay 17 ~ 20
0, 2015 / The K Seo
oul Hotel, Seoul, Korrea
Ro
oom P (Geu
umkang A Hall)
H
Sesssion Title:
Poster Sesssion I
Date
e:
May 18, 20
015 (Monda
ay)
Time:
16:30 ~ 18
8:00
MOP1-1]
[M
High-brig
ghtness, hig
gh-uniform
mity GaN-b
based LEDss on large-a
area Si sub
bstrates
Seung-Jae Lee, Jae-Chu
hul Song, Seo
ong-Ran Jeo
on, Jin-Woo Ju,
J Tak Jeong
g, and Jong Hyeob Baekk
[M
MOP1-2]
Luminescence prope
erties of de
efects inun
nintentiona
ally doped high-resistance GaN
N
Weike Luo,, Liang Li, Zh
honghui Li, Xun
X Dong, Daqing
D
Peng,
g, Dongguo Z
Zhang, and Xiaojun
X
Xu
[M
MOP1-3]
Raman an
nd photolu
uminescencce characte
erization off p-type In
nGaN films
Li Liang
[M
MOP1-4]
Freestand
ding non-polar m-pla
ane GaN grrowth by hydride
h
vap
por phase epitaxy
e
Seohwi Woo,
Wo Daehong
ng Min, Sang
gil Lee, Uiho
ho Choi, Hyu
unjae Lee, D
Daewoo Cho
oi, Jaiyong Han,
H
Kwangbo Shim,
S
and Okhyun
O
Nam
[M
MOP1-5]
Structurall and Opticcal Charactterization of GaN Films Grown
n on Differe
entSubstra
ates
Using Pullsed Laser Deposition
n
Wei-Kai Wang
Wa and Shiih-Yung Hun
nag
[M
MOP1-6]
VacuumRabi Splittin
ng of Excito
on–Polarito
on Emissio
on in an AlN
N Film
Kongyi Li, Weiying Wang,
Wa
Zhangh
hai Chen, Na Gao, Weih
huang Yang,
g, Wei Li, Hu
uangyang Chen,
Ch
Shuping Li,i, Heng Li, Pe
eng Jin, and
d Junyong Kaang
The 7th Asia-Pacif
A
fic Worksh
hop on Wid
degap Sem
miconductors
AP
PWS 2015
2 5
Ma
ay 17 ~ 20
0, 2015 / The K Seo
oul Hotel, Seoul, Korrea
Ro
oom P (Geu
umkang A Hall)
H
Sesssion Title:
Poster Sesssion I
Date
e:
May 18, 20
015 (Monda
ay)
Time:
16:30 ~ 18
8:00
MOP1-7]
[M
Direct Ob
bservation of Biaxial Stress Effe
ecton Efficciency Droo
op in GaN Based Lig
ghtEmitting Diode under Electrica
alInjection
Zheng Jinjiian
[M
MOP1-8]
Regrowth
h and optim
mization fo
or a 3-term
minal dual color
c
LED
Mundo Parrk, Jun Youb
b Lee, and Dong-Seon
Do
Le
ee
[M
MOP1-9]
Analyzing
g the piezzoelectric field ofInG
GaN-based
d multiple quantum
m wells lig
ghtemitting diodes
d
by usingsuper-lattice/lo
ow tempera
ature n-typ
pe GaN structure
Tae-Hoon Chung, Jong
g Hyeob Baaek, Sang-He
Hern Lee, Sun
ng-Ran Jeon
n, Sung-Hoo
on Jung, Kw
wang
Jae Lee, Paan-Ki Min, an
nd June Keyy Lee
[M
MOP1-10]
Correlatio
on of the efficiency
y droop in
n InGaN LEDs
L
betw
ween the time-resolv
t
ved
photolum
minescence and electrroluminesccence
Gyeong Won
Wo Lee, Don
ng-Soo Shin, Hyunsung Kim,
K
Won-Jin
in Choi, and Jong-In Shim
im
[M
MOP1-11]
Specific nano-pits
n
a
and
N dopiing on O-p
polar ZnO
Hao Wang,
g, Huahan Zh
han, Yinghuii Zhou, Xiaoh
hang Chen, Huiqiong
H
Wa
Wang, and Jun
nyong Kang
[M
MOP1-12]
Mg-ion-im
mplantatio
on Damage
e Influence onthe LattticeDeform
mation of GaN
G
Zheng Sun
n, Marc Olsso
son, Zheng Ye,
Y Tsutomu Nagayama, Tetsuya Waatanaba, Yosshio Honda, and
Hiroshi Am
mano
The 7th Asia-Pacif
A
fic Worksh
hop on Wid
degap Sem
miconductors
AP
PWS 2015
2 5
Ma
ay 17 ~ 20
0, 2015 / The K Seo
oul Hotel, Seoul, Korrea
Ro
oom P (Geu
umkang A Hall)
H
Sesssion Title:
Poster Sesssion I
Date
e:
May 18, 20
015 (Monda
ay)
Time:
16:30 ~ 18
8:00
MOP1-13]
[M
Growth of
o super-thiin AlN/GaN
N superlatttice structu
ureson diffferent GaN crystal pla
ane
ming xiao, Jincheng Zh
hang, and Yue
Yu hao
[M
MOP1-14]
Effect of surface morpholog
gy and th
hickness of
o AlNbufffer layer on structu
ural
properties of GaN/S
Si(111) sub
bstrate usin
ng MOCVD
D
Kee Young
g Lim and Jon
ong Ock Kim
[M
MOP1-15]
High perfformance integrated enhancem
ment/deple
etion-mode
e GaN MIS
S-HEMTs with
w
high-κ die
electric
Yuechan Kong,
Ko
Jianjun Zhou, Cen Kong,
K
Kai Zh
hang, and Taangsheng Ch
hen
[M
MOP1-16]
The impro
oved perfo
ormance off AlGaN/Ga
aN HEMTs by N2O plasma
MINHAN MI,
M Shenglei Zhao, Yunlo
ong He, Xiao
ohua Ma, and
d Yue Hao
[M
MOP1-17]
Effect off fluorine plasma treatmentt on breakdownvoltage perrformance of
AlGaN/Ga
aN HEMTs
yunlong he
e, chong wan
ng, minhan mi, shengleii zhao, jinche
heng zhang, xxiaohua ma, and yue haao
[M
MOP1-18]
Investigattion
of
Undiminish
hed
Surfa
ace
Dono
or
Density
y
of
GaN
N/AlGaN/G
GaN
Heterostrructure on Si-substratte by Electtroreflectan
nce Spectro
oscopy
Woong Sun
n Kim, Jong Hoon Shin, Young Je Jo
o, Kwang Ch
hoong Kim, aand Kyu-Sang
ng Kim
The 7th Asia-Pacif
A
fic Worksh
hop on Wid
degap Sem
miconductors
AP
PWS 2015
2 5
Ma
ay 17 ~ 20
0, 2015 / The K Seo
oul Hotel, Seoul, Korrea
Ro
oom P (Geu
umkang A Hall)
H
Sesssion Title:
Poster Sesssion I
Date
e:
May 18, 20
015 (Monda
ay)
Time:
16:30 ~ 18
8:00
MOP1-19]
[M
Theinfluence
of
improveme
ent
and
performa
ance
AlGa
aN/GaN
HEMT
H
ussing
Al2O­3surface prote
ection laye
er
Ryun-Hwi Kim,
K
Jun-Hye
yeok Lee, Chu
hul-Ho Won, Young-Woo
o Jo, Do-Kyw
wn Kim, and Jung-hee
J
Le
ee
[M
MOP1-20]
Fabricatio
on and characterizatio
on of ZnSn
nO3 p-njun
nction for o
optoelectro
onics
Taek Gon Kim,
K
magesh
hwari kandhaasamy, and Jinsub
J
Park
[M
MOP1-21]
Impacts of surface
e charging
g on the degradatiion modes of AlGa
aN/GaN high
h
electron mobility
m
tra
ansistors under
u
reverrse-bias strress
Wei-Wei Chen,
C
Bin Hou
ou, Jie-Jie Zhu
hu, Jin-Cheng
g Zhang, Xiao
ao-Hua Ma, aand Yue Hao
o
[M
MOP1-22]
Fabricatio
on and characteristicss of Omega
a-shaped-g
gateAlGaN/GaN FinFETs
Sindhuri Vodapally,
Vo
Do
ong-Gi Lee, Young-Woo
Y
Jo, Dong-Hyyeok Son, Ki
Ki-Sik Im, and
d Jung-Hee Lee
L
[M
MOP1-23]
Simulation of InN/G
GaN-based Double-GateTunneling Field-Efffect Transsistor
Jae Hwa Seo,
Se Ra Hee Kwon, Youn
ng Jun Yoon,
n, Young-Woo
oo Jo, Ryun-H
Hwi Kim, Do
ong-Hyeok Son,
S
Jung-Hee Lee,
L
and In Man
M Kang
[M
MOP1-24]
The influe
ence of hyd
drogen adsorption on spontane
eous polarrization of AlN and GaN
G
Jiaduo Zhu
u and Jinchen
eng Zhang
The 7th Asia-Pacif
A
fic Worksh
hop on Wid
degap Sem
miconductors
AP
PWS 2015
2 5
Ma
ay 17 ~ 20
0, 2015 / The K Seo
oul Hotel, Seoul, Korrea
Ro
oom P (Geu
umkang A Hall)
H
Sesssion Title:
Poster Sesssion I
Date
e:
May 18, 20
015 (Monda
ay)
Time:
16:30 ~ 18
8:00
MOP1-25]
[M
Temperature depen
ndent electtrical chara
acteristicsffor AlInN:M
Mg/GaN heterojunct
h
tion
field-effecct transisto
ors
Seongjun Kim
K and Hyu
unsoo Kim
[M
MOP1-26]
Silicon/PE
EDOT:PSS Hybrid So
olar Cell with
w
a the
ermally reduced gra
aphene ox
xide
bufferlaye
er
Jung-Hwan
n Hyung, Be
eo Deul Ryu
u, Min Han, Ko Ku Kan
ng, Tran Vie
et Cuong, Jaaehee Cho, and
Chang-Hee
e Hong
[M
MOP1-27]
Optimum
m thermal design
d
of searchlight module ussingtherma
al simulatio
on
LEE ARAM
[M
MOP1-28]
Discomfo
ort glare type for indo
oor lumino
ousenvironment in sh
hip
youngmoo
on yu
[M
MOP1-29]
Photoelecctronspectrra of AlN/G
GaN hetero
ostructure observed by AR-XPS
S
Daiki Isono
o, Shota Taka
kahashi, Yohe
ei Sugiura, To
omohiro Yam
maguchi, and
d Thoru Hon
nda
The 7th Asia-Pacif
A
fic Worksh
hop on Wid
degap Sem
miconductors
AP
PWS 2015
2 5
Ma
ay 17 ~ 20
0, 2015 / The K Seo
oul Hotel, Seoul, Korrea
Ro
oom P (Geu
umkang A Hall)
H
Sesssion Title:
Poster Sesssion II
Date
e:
May 19, 20
015 (Tuesda
ay)
Time:
16:30 ~ 18
8:00
TUP2-1]
[T
Nano-size
ed InGaN/G
GaN polariized light emitting
e
diiodes
ZiLi Xie, Taao Tao, Ting
g Zhi, Zhe Zhuang,
Zh
jiang
gping Dai, yi
y Li, Fulong Jiang, Bin Liu,
L Hong zh
hao,
Rong Zhan
ng, and Youd
dou Zheng
[T
TUP2-2]
Investigattion of su
urface-plasmon coup
pled red light emittting InGaN
N/GaN mu
ultiquantum well with Ag
A nanopa
articles coa
ated on Ga
aN surface
Yi Li, Bin Liu, Rong Zhang,
Z
Zili Xie,
X Zhe Zhu
huang, Jiangp
ping Dai, Ta
Tao Tao, Ting
g Zhi, Guog
gang
Zhang, Hon
ong Zhao, Pe
eng Chen, Du
unjun Chen, and Youdou
u Zheng
[T
TUP2-3]
Enhanced
d crystal qualities
q
off nitride-ba
asedlight-e
emitting d
diodes with
h MgN intterlayers
Hee-Sung Ku, Jong Hyeob
Hy
Baek, Kwang Cheo
eol Lee, Jin Hong
H
Lee, S
Sang-Mook Kim, Sung-C
Chul
Choi, Hyokkun Son, and
d June Key Lee
L
[T
TUP2-4]
Dark Currrent Mecha
anisms in AlGaN
A
Avalanche Pho
otodiodes
Yin Tang, Zhenguang
Z
S
Shao,
Dun Ju
un Chen, Haai Lu, Rong Zhang,
Z
and Y
Youdou Zhen
ng
[T
TUP2-5]
Investigatting Charg
ge Trap Density
D
off InGaN Blue Ligh
ht Emitting
g Diodes by
Capacitan
nce Disperssion Measu
urement
Kyu-Sang Kim,
K
Dong-P
Pyo Han, Hyu
un-Sung Kim
m, and Jong--In Shim
[T
TUP2-6]
Graphene
e interlayerr for curre
ent spread
ding enhan
ncementby engineering of barrier
height in GaN-based
d light-emitting diod
des
Jung-Hong
g Min, Woo--Lim Jeong, Jun-Yeob
J
Lee
ee, and Dong
g-Seon Lee
The 7th Asia-Pacif
A
fic Worksh
hop on Wid
degap Sem
miconductors
AP
PWS 2015
2 5
Ma
ay 17 ~ 20
0, 2015 / The K Seo
oul Hotel, Seoul, Korrea
Ro
oom P (Geu
umkang A Hall)
H
Sesssion Title:
Poster Sesssion II
Date
e:
May 19, 20
015 (Tuesda
ay)
Time:
16:30 ~ 18
8:00
TUP2-7]
[T
A Cu-messh-combined graphe
ene sheet for a tran
nsparent co
onductive layer and its
thickness dependen
nce on the conductiviity
Woo-Lim Jeong,
J
So-Ye
eong Jang, Ju
ung-Hong Min,
M and Don
ng_Seon Lee
e
[T
TUP2-8]
Analysis of
o luminou
us efficienccy in phossphor-conv
versionwhitte light-em
mitting diod
des
for evalua
ating the conversion
c
efficiency of phosph
hor
Guen-Hwan
an Ryu, Won--Bo Yang, Yo
oung-Hwan Choi,
C
Byungj
gjin Ma, and Han-Youl Ryu
Ry
[T
TUP2-9]
Enhanced
d light exttraction off InGaN/G
GaN light emitting d
diode by using NiC
CoO
nanopartiicles
Jinsub Parkk, Dong Su Shin,
S
and Do
o Hyun Kim
[T
TUP2-10]
Design off vertical AlGaN-bas
A
sed ultraviolet LEDs with distrributed bra
ag reflecto
orspixel metal combine
ed electrod
des
Xu Yang, Jiinchai Li, Zhaaorong Yuan
n, Shuping Li,
L Yinghui Zh
hou, and Jun
nyong Kang
[T
TUP2-11]
Removal of Hydrog
gen in Mg
g-Doped GaN
G
Epitax
xial Layer by an Ele
ectrochemical
Method
GilYong Hyyeon, Wael Z.
Z Tawfik, Sun
ngOh Cho, YuanPei
Y
Zhan
ng, SangWaan Ryu, and JuneKey
J
Lee
e
[T
TUP2-12]
SinglePho
oton Detecction Perfformance of 4H-SiC
C Avalanch
he Photodiodes atHigh
Temperature
Dong Zhou
u, Hai Lu, Du
unjun Chen, Fangfang Ren,
Re Rong Zh
hang, and Yo
oudou Zheng
g
The 7th Asia-Pacif
A
fic Worksh
hop on Wid
degap Sem
miconductors
AP
PWS 2015
2 5
Ma
ay 17 ~ 20
0, 2015 / The K Seo
oul Hotel, Seoul, Korrea
Ro
oom P (Geu
umkang A Hall)
H
Sesssion Title:
Poster Sesssion II
Date
e:
May 19, 20
015 (Tuesda
ay)
Time:
16:30 ~ 18
8:00
TUP2-13]
[T
Stress-Ind
duced Piezo
oelectric Field in GaN
N-Based Blue Light-Emitting Dio
odes
Wael Z. Taw
wfik, GilYong
g Hyeon, Sun
ngOh Cho, YuanPei
Y
Zhan
ng, and June
ekey Lee
[T
TUP2-14]
High-tem
mperature and reliab
bility perfformance of 4H-SiC
C Schottk
ky
barrier
photodiod
des for UV
V detection
n
Yisong Xu
[T
TUP2-15]
Effect of Si and Mg
gdopants on
o chemica
al wet-etch
hed phenom
mena of se
emipolar (11(
22) GaN film
f
Ji-Yeon Parrk and Sung-Nam Lee
[T
TUP2-16]
Improved
d light extraction effficiency off GaN-base
edlight-em
mitting diodes by ussing
the aqueo
ous ZnO pa
attern
Hee-jun Le
ee, Nak-Jung
g Choi, and Sung-Nam
S
Lee
L
[T
TUP2-17]
Interfacial Reaction of Ti/Al Ohmic
O
conta
act to N-fa
acen-GaN
Buem Joon
n Kim, Jun Ho
H Son, Hak Ki Yu, and Jong-lam
Jo
Lee
e
[T
TUP2-18]
MgO Laye
er with Na
ano-Facet for
f Enhanccement of LightExtracction Efficiiency in Ga
aNBased Lig
ght-Emitting Diodes
Buem Joon
n Kim, Chul Jong
J
Yoo, Su
ungjoo Kim, Jae Yong Paark, and Jong
ng-lam Lee
The 7th Asia-Pacif
A
fic Worksh
hop on Wid
degap Sem
miconductors
AP
PWS 2015
2 5
Ma
ay 17 ~ 20
0, 2015 / The K Seo
oul Hotel, Seoul, Korrea
Ro
oom P (Geu
umkang A Hall)
H
Sesssion Title:
Poster Sesssion II
Date
e:
May 19, 20
015 (Tuesda
ay)
Time:
16:30 ~ 18
8:00
TUP2-19]
[T
p-GaN oh
hmic of Ni alloy/Ag reflective electrode fo
orhigh efficciency LED
Ds
Kab Ha, So
oon-Cheol Shin,
S
Ji-Youn
ng Baek, Joo
on-Sung Kwo
won, Soo-Hyu
un Kang, an
nd Kyoung-K
Kook
Kim
[T
TUP2-20]
Enhancem
ment of Electrical and
a
Optica
al Properties of LED
D Using Ag
A Reflecttive
Electrode on p-GaN
N Embedded Cu alloy Nano-dotts
Ji-Young Baek,
Ba
Jongyeu
eul Jeong, So
ohyeon Kim, Soon-Cheo
ol Shin, Dong
g-Jun Kim, Nam-Woo
N
Ka
Kang,
and Kyoung
ng-Kook Kim
m
[T
TUP2-21]
Oxide-bassed Quantu
um Well In
nfrared Pho
otodetecto
ors
Zhi Shiuh Lim,
L
Zhihua Yong,
Y
Jie Tan
ng, and Soo
o Jin Chua
[T
TUP2-22]
Improvem
ment of external
e
qu
uantum effficiency for
f
flip-chiipLEDs with optimizzed
SiO2/TiO2
2 DBR
Gil Jun Lee
e, Seung Kyu
u Oh, Yu-Jung
ng Cha, Yu Liim Lee, and Joon Seop K
Kwak
[T
TUP2-23]
Defect distribution
d
n in InGaN/GaNligh
ht-emitting
g diodes investigate
ed by ussing
frequency
y-dependencecapacittance-volta
age measurrement
Tae-Soo Kim,
Ki
Nna-Cho
ho Oh, Hye-J
-Jung Yu, Taae-Kyun Eom
m, Seung Yo
Young Lim, Yungboo
Y
Mo
oon,
Soon-Ku Hong,
H
Jong-H
Hyeob Baek, Taehoon Ch
hung, and Ju
ung-Hoon So
Song
[T
TUP2-24]
Highly tra
ansparent metallic tra
ansparent conductive
eelectrodess deposited by obliqueangle dep
position me
ethod for high-efficie
h
ency GaN-based light-emittingd
diodes
Munsik Oh
h and Hyunso
soo Kim
The 7th Asia-Pacif
A
fic Worksh
hop on Wid
degap Sem
miconductors
AP
PWS 2015
2 5
Ma
ay 17 ~ 20
0, 2015 / The K Seo
oul Hotel, Seoul, Korrea
Ro
oom P (Geu
umkang A Hall)
H
Sesssion Title:
Poster Sesssion II
Date
e:
May 19, 20
015 (Tuesda
ay)
Time:
16:30 ~ 18
8:00
TUP2-25]
[T
Experimental deterrmination of carrierr injection
n efficiency
y in InGa
aN/GaN light
emitting diodes
d
Nancho Oh
h, Taesoo Kim
im, Hyejung Yu, Youngbo
oo Moon, an
nd Junghoon
n Song
[T
TUP2-26]
InGaN/Ga
aNLEDs: A Temperatu
ure Gradien
nt Method
H. Fukunag
ga, S. Nohdaa, M. Kimura,
a, M. Muguru
uma, SHIRO SAKAI, and Y. Muramoto
to
[T
TUP2-27]
Effect of polarity on
n the electtrical chara
acterization
n of Ag oh
hmic conta
acts to p-ty
ype
GaN
Jae-Seong Park, Jaeche
eon Han, and
nd Tae-yeon Seong
S
[T
TUP2-28]
Measurem
ment of pie
ezoelectric field in single- and double-qu
uantum-we
ell green LE
EDs
using elecctroreflecta
ance spectroscopy
Usman Mu
uhammad, Hyunsung
Hy
Kim
m, and Dong
g-soo Shin
[T
TUP2-29]
Theoretical and exp
perimental analysis of
o blue MQW and g
green SQW
W InGaN/G
GaN
light-emittting diode
es
Usman Mu
uhammad, Hyunsung
Hy
Kim
m, and Jong-In Shim
[T
TUP2-30]
Affect of n-doping and n-GaN
N thicknesss on the light extracction efficiiency (LEE)) of
blue InGa
aN/GaN lig
ght-emitting
g Diodes
Usman Mu
uhammad, Hyunsung
Hy
Kim
m, and Jong-in Shim
The 7th Asia-Pacif
A
fic Worksh
hop on Wid
degap Sem
miconductors
AP
PWS 2015
2 5
Ma
ay 17 ~ 20
0, 2015 / The K Seo
oul Hotel, Seoul, Korrea
Ro
oom P (Geu
umkang A Hall)
H
Sesssion Title:
Poster Sesssion II
Date
e:
May 19, 20
015 (Tuesda
ay)
Time:
16:30 ~ 18
8:00
TUP2-31]
[T
Photo-pumped Lasing from In
nGaN Nano
orings
HOI WAI CHOI,
C
KWAI HEI
H LI, and YUK
Y
FAI CHEEUNG
[T
TUP2-32]
Orientatio
on-controllled growtth of inclined GaN
N nanorod
ds on m-sapphire by
metalorga
anic chemiical vapor deposition
d
without catalyst
Kyuseung Lee,
L
Sooryon
ng Chae, Jon
ongjin Jang, Daehong
D
Mi Jaehwan Kim, Yang-S
Min,
Seok Yoo, Yo
ongHoon Cho, and Okhyu
un Nam
[T
TUP2-33]
Study of GaN
G
Decom
mposition in Atmosp
pheric Presssures
SHIH-YUNG
G HUANG, WEI-KAI
W
WAN
ANG, and PO-RUNG LIN
[T
TUP2-34]
Numerica
al investiga
ation of lig
ght extractiion efficien
ncyin AlGaN-based nanorod
n
lig
ghtemitting diode
d
strucctures emitting at ulttravioletwa
avelengthss
Won-bo Yaang, Guen-H
Hwan Ryu, Yo
oung-Hwan Choi,
C
and Han-Youl
Ha
Ryu
u
[T
TUP2-35]
High Qua
ality, Orde
ered InGaN
N Nanopy
yramid ArrraysGrown
n on Si Substrates for
Potential Photovolta
aic Applica
ations
Jian Wei Ho,
H Michael Heuken,
H
And
drew A. O. Taay, and Soo-J
-Jin Chua
[T
TUP2-36]
Patterning
g of ZnO Nanorod Arrays
A
by Modulatin
ng theRoug
ghness of GaN Surfface
using KrF
F Excimer Laser
L
Buem Joon
n Kim, Sungjjoo Kim, Hyu
ung Won Ch
ho, Jae Yong Park, and Jo
ong-lam Lee
e
The 7th Asia-Pacif
A
fic Worksh
hop on Wid
degap Sem
miconductors
AP
PWS 2015
2 5
Ma
ay 17 ~ 20
0, 2015 / The K Seo
oul Hotel, Seoul, Korrea
Ro
oom P (Geu
umkang A Hall)
H
Sesssion Title:
Poster Sesssion II
Date
e:
May 19, 20
015 (Tuesda
ay)
Time:
16:30 ~ 18
8:00
TUP2-37]
[T
Comparison
of
s
simultaneo
ous
and
pulsed-m
mode
MO
OVPE
grow
wthsof
G
GaN
nanocolum
mns
Naoyuki Mizuno,
M
Satosshi Kamiyam
ma, Tetsuya Takeuchi,
Ta
Mo
otoaki Iwaya, and Isamu Akasaki
[T
TUP2-38]
Fabricatio
onof GaN based na
anostructurres by hy
ydrogen en
nvironmen
nt anisotro
opic
thermal etching(HEA
e
ATE)
Akihiko Kikkuchi, Ryo Kita,
Ki Ryo Hach
chiya, and To
omoya Mizuttani