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The 7th Asia-Pacific Workshop on Widegap Semiconductors
APWS 2015
May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea
Room B (Crystal Ballroom B)
Session Title:
[TUB2] 02. Optoelectronic Devices : Carrier Dynamics
Date:
May 19, 2015 (Tuesday)
Time:
11:00 ~ 12:25
Session Chair:
Hideki Hirayama (RIKEN, Japan)
Jinsub Park (Hanyang Univ., Korea)
[TUB2-1]
11:00 ~ 11:25
[Invited] Advances on visible-blind and solar-blind photodetectors
based on wide bandgap semiconductors
Hai Lu, Dunjun Chen, Rong Zhang, and Youdou Zheng (Nanjing Univ., China)
[TUB2-2]
11:25 ~ 11:40
Carrier dynamics in InGaN-based light-emitting diodes studied by
differential carrier lifetimes
Dong-Soo Shin, Dong-Pyo Han, Young-Jin Kim, and Jong-In Shim (Hanyang
Univ., Korea)
[TUB2-3]
11:40 ~ 11:55
Change in forward-voltage characteristics due to carrier overflow
in InGaN-based light-emitting diodes
Dong-Pyo Han, Hyunsung Kim, Dong-Soo Shin, and Jong-In Shim (Hanyang
Univ., Korea)
[TUB2-4]
11:55 ~ 12:10
Alleviated efficiency droop in InGaN/GaN multiple quantum wells
light-emitting diodes by trapezoidal quantum barriers
Sang-Jo Kim, Kwang Jae Lee, Jae-Joon Kim, and Seong-Ju Park (GIST, Korea)
[TUB2-5]
12:10 ~ 12:25
U-shape phenomenon in the efficiency-versus-current curves in
AlGaN-based deep-ultraviolet light-emitting diodes
Jun Hyuk Park (POSTECH, Korea), Guan-Bo Lin (Rensselaer Polytechnic Inst.,
USA), Dong Yeong Kim, Jong Won Lee (POSTECH, Korea), Jaehee Cho
(Chonbuk Nat'l Univ., Korea), Jungsub Kim (Samsung Electronics Co., Ltd.,
Korea), Jong Kyu Kim (POSTECH, Korea), and E. Fred Schubert (Rensselaer
Polytechnic Inst., USA)