Poster Layout of INC11 (May12‐13) INC11 May12‐13 Panel# Poster# INC11 INC11 May12‐13 May12‐13
Poster# Poster# Panel#
INC11 May12‐13
Poster# 1
1 8 8
15
15 22
I-22
2
2 9 9
I-16
16 23
I-23
3
3 10 10
I-17
17 24
I-24
4
4 11 11
I-18
18 25
I-25
5
5 12 12
I-19
19 26
I-26
6
6 13 13
I-20
20 27
I-27
7
7 14 I-14
I-21
21 28
I-28
INC11 May12‐13 Poster# Panel# INC11 INC11 May12‐13 May12‐13
Poster# Poster# Panel#
INC11 May12‐13
Poster# I-29
29 35 I-35
I-41
41 48
I-48
I-30
30 36 I-36
I-42
42 49
I-49
I-31
31 37 I-37
I-43
43 50
I-50
I-32
32 38 I-38
44 51
I-51
I-33
33 39 I-39
I-45
45 52
I-52
I-34
34 40 I-40
I-46
46 53
I-53
I-47
47 54
I-54
INC 11 Posters : May 12-13, 2015
Poster #
Poster
Panel#
1
Paper Title
Author
Affiliation
Region
1
Orientation-controlled large-grain SiGe on
insulator by gold-induced crystallization at lowtemperature for flexible opto-electronics
Taizoh SADOH
Kyushu University
Japan
2
2
Sn-precipitation-suppressed solid-phase epitaxy
of GeSn on Ge at low-temperatures (~150 degree Taizoh SADOH
C)
Kyushu University
Japan
3
3
Low temperature solid phase crystallization of
GeSn on insulator for flexible electronics
R.Matsumura, Taizoh
Kyushu University
SADOH
Japan
4
4
Fast and precise digital hybrid pixel detectors for
Drozd Aleksandra
X-ray imaging
AGH University of Science and
Technology
5
5
Coupled quantum dot devices
Takumu Honda
Tokyo Institute of Technology, QNERC,
Oda-laboratory
Japan
6
6
Fabrication of silicon nanocrystals by VHF
plasma processes
Shotaro Yamazaki
Tokyo Institute of Technology, QNERC,
Oda-laboratory
Japan
7
7
Fabrication and Thermo-electric Properties of
Ge/Si Core/Shell Nanowires
Tomohiro Noguchi
Tokyo Institute of Technology, QNERC,
Oda-laboratory
Japan
8
8
Growth of thermoelectric strontium hexaboride
thin films with MBE
Tommi Tynell
National Institute for Materials Science
Japan
9
9
Advanced methods for mechanical and structural
characterization of nanoscale materials for 3D IC
integration
Christoph Sander
Fraunhofer IKTS-MD
Europe
10
10
GRAFOL: From Large Scale Graphene Synthesis
Clara Moldovan
to Device Integration for Nanotechnology
Ecole Politechnique Federale de
Lausanne, Switzerland
Europe
11
11
Electro-click coupling: a selective integration of
functionnal building blocks in surface devices.
RYDZEK Gaulthier
NIMS-MANA
Japan
12
12
Tsukuba Power-Electronics Constellations :
TPEC
Michiya Okada
National Institute of Advanced Industrial
Science and Technology
Japan
13
13
European Research on Nano-Scale Dependability Dimitrios Rodopoulos ICCS/NTUA, Greece
Europe
I-14
14
Study, Fabrication and Characterization of FDSOI
devices with SPER activated junctions at low
Luca Pasini
temperature for 3D VLSI - CoolCube Integration
STMicroelectronics, CEA/LETI, IMEPLAHC
Europe
15
15
Research and Collaboration Function at AIST
Kyushu
Eishi MAEDA
National Instite of Advanced Industrial
Science and Technology (AIST)
Japan
I-16
16
TIA-nano, Open platform for nanotechnology
innovation and for human resource development
H. IWATA, S.
Hishita, M.
SUEHIRO, and S.
IKEDA
AIST, NIMS, University of Tsukuba,
KEK
Japan
I-17
17
Nanotech Career-up Alliance (Nanotech CUPAL)
Shigeo OKAYA
National Institute of Advanced Industrial
Science and Technology (AIST)
Japan
National Institute of Advanced Industrial
Science and Technology(AIST)
Nanoelectronics Research
Institute(NeRI)
Japan
Nanotechnology Platform Center,
National Institute for Materials Science
Japan
I-18
18
Open research facilities in AIST
Shutaro Asanuma,
Ph.D.
I-19
19
Progress of Nanotechnology Platform Japan
Tetsuji Noda
Europe
INC 11 Posters : May 12-13, 2015
Poster #
Poster
Panel#
I-20
Paper Title
Author
Affiliation
Region
20
Nanotechnology Platform at Nara Institute of
Science and Technology (NAIST)
Yoshihiro Todokoro
and Tsuyoshi Kawai
Nara Institute of Science and
Technology
Japan
I-21
21
Investigation of Devices, Center of NanoFerroic
Decices (CNFD)
Takashi Komesu
University of Nebraska-Lincoln
US
I-22
22
South West Academy of Nanoelectronics
Sanjay K. Banerjee
(SWAN): Development of Beyond-CMOS Devices
Microelectronics Research Center at
the University of Texas at Austin
US
I-23
23
The STARnet Functional Accelerated
nanoMaterials Engineering (FAME) Center of
Excellence at UCLA
Kosmas Galatsis
University of California, Los Angeles
US
I-24
24
nanoHUB: the Growth of a United States
Cyberinfrastructure into a Global Learning and
Research Community
Gustavo A ValenciaPurdue University, Network for
Zapata, Michael G
Computational Nanotechnology
Zentner
US
I-25
25
Discovering Usage Patterns of nanoHUB Tools
through Association Rules
Gustavo A ValenciaPurdue University, Network for
Zapata, Michael G
Computational Nanotechnology
Zentner
US
I-26
26
Center for Low Voltage Systems Technology
(LEAST)
Erich W Kinder
University of Notre Dame
US
I-27
27
Creation of innovative integrated electronic
technologies through international industryacademic consortium (CIES consortium)
Takahiro Shinada
Center for Innovative Integrated
Electronic Systems, Tohoku University
I-28
28
ASCENT: A European distributed research
infrastructure
Carlo REITA
CEA-LETI
I-29
29
Bias Dependent Electronic Structures under Highk Device Operation : Operando Hard X-ray
Yoshiyuki Yamashita National Institute for Materials Science
Photoelectron Spectroscopy
I-30
30
Analysis of the SET and RESET states drift of
Phase-Change Memories by Low Frequency
Noise measurements
Luca Perniola
Cea-LETI
Europe
I-31
31
Freestanding 3D-Nanostructures based on ALDfilms on CMOS
Andreas Goehlich,
Joachim Pelka
Fraunhofer IMS
Europe
I-32
32
Threshold Voltage Self-Adjusting MOSFETs and
SRAM Cells Operating at 0.1V
Toshiro Hiramoto
The University of Tokyo
I-33
33
Bilayer Graphene-Hexagonal Boron Nitride
Heterostructure Operating as a Negative
Differential Resistance Interlayer Tunnel FETs
Sangwoo Kang
Microelectronics Research Center at
the University of Texas at Austin
I-34
34
High-Vbd Dual-oxide Complementary BEOL-FETs
Hiroshi Sunamura
for Compact On-chip Power Building Block
Renesas Electronics Corporation
I-35
35
IntAct: a high density active CMOS interposer
Severine Cheramy
CEA-LETI
I-36
36
2D Perovskie Nanosheet: A New Platform for
High-Tempearture Electronics
Yoon-Hyun Kim
National Institute for Materials
Scicence
Japan
Europe
Japan
Japan
US
Japan
Europe
Japan
INC 11 Posters : May 12-13, 2015
Poster #
Panel#
Paper Title
Author Name
Affiliation
Region
I-38
38
Ion-Locking Method for Doping Atomically-Thin
Transistors
Erich W Kinder
University of Notre Dame
US
I-39
39
Electrical Spin Injection and Transport in Si 2DEG
System
Li-Te Chang
UCLA
US
I-40
40
Investigation of Antiferromagnetic Magneto-electric
Surface Electronic Structure with Using Spin Polarized
Inverse Photoemission Spectroscopy
Takashi Komesu
University of Nebraska-Lincoln
US
I-41
41
Epitaxial growth of non polar ZnO/GaN heterojucntion on
Toyohiro Chikyow
Si (100) for ultraviolet light emitting diode
National Institute for Materials Science
Japan
I-42
42
Combinatorial synthesis of Bi contained relaxer
ferroelectric film for high temperature operational thin
film capacitor
Takahiro Nagata
National Institute for Materials Science
Japan
I-43
43
Electrically-driven magnetic domain wall rotation in
submicron-scale multiferroic heterostructures
Hyunmin Sohn
University of California, Los Angeles
US
I-45
45
Characteristics of the Rare-Earth Free Nanostructured
SrFe12O19 Permanent Magnets Synthesized for
Renewable Energy Applications
Aleksey Volodchenkov
University of California, Riverside - Spins
and Heat in Nanoscale Electronic Systems
(SHINES) Center
US
I-46
46
Layered complex nitrides as a new class of
thermoelectric materials
Isao Ohkubo
National Institute for Materials Science
(NIMS)
Japan
I-47
47
Development of Power Electronics Equipment Applying
Daisuke Yoshimi
GaN Power Devices
Corporate R&D Center, Technology &
Development Div, Yaskawa Electric
Corporation
Japan
I-48
48
Proximity-induced ferromagnetism in graphene and
topological insulators interfaced with YIG
Chi Tang
University of California, Riverside
US
I-49
49
Controlling Spin, Charge and Heat for Achieving Higher
Energy Efficiencies in Nanoscale Electronic Devices
Chi Tang
University of California, Riverside
US
I-50
50
Nanoscale planarization and surface modification of 2D
Alexey Ivanov
and 3D substrates by molecular assembly from gas and
Victor Luchinin
liquid phases
St Petersburg Electrotechnical University
Europe
I-51
51
Resistive switching and memory effects in metal oxide
thin films grown by atomic-layer deposition
Liudmila Alekseeva
St. Petersburg Electrotechnical University
(Russia)
Europe
I-52
52
Growth and nucleation dominated phase-change
materials for nano-optoelectronics and display
technology
Carlos Rios
Department of Materials, University of
Oxford
Europe
I-53
53
Addressing the confusion regarding capture cross
sections using charge pumping and reaction kinetics
Asahiko Matsuda
National Institute of Standards and
Technology
US
Late Submission
I-55
Gage Hills, Max Shulaker,
Tony Wu, Mohamed
Dept. of Electrical Enigneering, Stanford
Monolithic 3D CNT Electronics: a Path from Concept to Sabry, Gregoty Pitner,
University, Dept. of Computer Science,
Chi-Shuen Lee, H.-S.
Reality
Stanford University
Philip Wong, Subhasish
Mitra
I-56
Circumventing Carbon Nanotube Variations through
Statistical Error Compensation
G. Hills, T. Gao, M.
Shulaker, E. Kim, C.-S.
Lee, G. Pitner, T. Wu, Stanford University, University of Illinois at
H. Chao, H.-S. P.
Urbana-Champaign
Wong, N. Shanbhag, S.
Mitra
I-57
Carbon Nanotube computer: Transforming Scientific
Discoveries into Working Systems
M. Shulaker, G. Hills, N.
Patil, H. Wei, H.Y.
Stanford University
Chen, H.-S. P. Wong,
S. Mitra
US
US
US