» MAY 1 3 - 1 4 , 2 0 1 5
Electron Microscopy and Spectroscopy in Micro and Nano Electronics
TRAINING WORKSHOP
Center for Electron Microscopy and Nanofabrication, Portland State University
DAY 1: May 13, 2015 » Wednesday 8 AM – 5 PM
DAY 2: May 14, 2015 » Thursday 9 AM – 5 PM
MORNING SEMINARS: Smith Memorial Student Union
MORNING SEMINARS: Smith Memorial Student Union
8:00 AM Continental Breakfast
9:00 AM Using EELS to open a window to the nano-world
8:30 AMWelcome
9:00 AM Challenges in yield improvement for ULSI processing
9:40 AM Transmission Kikuchi Diffraction for high resolution quantitative microstructural analysis in the SEM
9:40 AM Basics of plasma etch
10:20 AMBreak
10:20 AMBreak
10:45 AM Quantitative microscopy: Strain and composition measurements
10:45 AM Scanning X-ray photoelectron spectroscopy and its application in semiconductor device process
11:25 AM Nanofabrication at the sub-10nm length scale using inert ions
11:25 AM Advanced DB techniques: STEM and GFIB
AFTERNOON DEMOS: Center for Electron Microscopy & Nanofabrication
12:05 PM Lunch and migration to CEMN
12:05 PM Lunch and migration to CEMN
1:00 PMWelcome/Logistics
AFTERNOON DEMOS: Center for Electron Microscopy & Nanofabrication
1:20 PM Angle-resolved XPS for thin film analysis
1:00 PMWelcome/Logistics
2:10 PM EELS quantification and EFTEM
1:20 PM Surface contamination analysis by XPS
3:00 PMBreak
2:10 PM Nanoprobe elemental quantification and mapping with STEM/EDX
3:20 PM Cross milling without sample rotation
3:00 PMBreak
4:10 PM EBSD analysis in SEM
3:20 PM TEM sample preparation by FIB
5:00 PMConclusion
4:10 PM Elemental quantitative analysis in SEM
5:00 PMConclusion
DAY 1: May 13, 2015 » Wednesday 8 AM – 5 PM
Challenges in yield improvement for ULSI processing
ABSTRACT
Joe Lebowitz
Director of Yield and
CMOS Integration
Maxim Integrated
joe.lebowitz@
maximintegrated.
com
Yield improvement can be one of the most important activities in ULSI
processing. Due the complexity of processing however this can also be a
very challenging endeavor. Many methodologies and tools exist to assist
engineers in this often daunting task. This presentation will touch upon
some of the methods and tools used to drive yields as well as some of
the key challenges faced by yield engineers and how they utilize the
various techniques to address these challenges.
BIO
JOE LEBOWITZ is the Director of Yield and CMOS Integration at Maxim
Integrated in their Beaverton Oregon wafer fabrication facility. Mr. Lebowitz
(Joe) joined Maxim in 2012 where he has been leading the transfer and
development of Maxim’s newest CMOS technologies for use in their highly
integrated Analog solutions. Mr. Lebowitz has been working in the
Semiconductor industry for over 30 years and has deployed best known
methods and systems for yield improvement at Bell Labs, AMD, TI, and
Freescale prior to joining Maxim. He has a BSEE from Steven’s Tech and
an MS in Applied Physics from Caltech.
Basics of plasma etch
ABSTRACT
Gary Stinson
Sr. Yield Manager,
Fab4
Microchip
Technology, Inc.
Plasma Etch is a critical technology for semiconductor processing. In this
presentation we will cover both plasma etch and resist strip processes,
equipment used at Microchip Technology, and what could go wrong.
This presentation is part of a series of internal classes for production
specialists and technicians who are looking for a deeper understanding
of what goes on behind the buttons.
BIO
GARY STINSON has 20 years of experience at Microchip Technology
beginning with patterned and unpatterned wafer inspection, both in Fab2
(Tempe, AZ) and Fab4 (Gresham) beginning in 2002. Promoted to Fab4
Yield Manager in 2004 with responsibilities for Device/Process Integration
in addition to wafer inspection. Developed a partnership with PSU CEMN
for cross section TEM capability beginning in 2012.
gary.stinson@
microchip.com
Scanning X-ray photoelectron spectroscopy and its application in semiconductor device process
ABSTRACT
Zhiqiang “Tony”
Chen
Manager
Center for Electron
Microscopy &
Nanofabrication,
Portland State
University
X-ray photoelectron spectroscopy (XPS) is a qualitative and quantitative
spectroscopic technique that measures the elemental composition and
chemical state of the elements on 1~12nm top surface of the materials
or device. Monochromatic, micro-focused, and scanning x-ray source
provides excellent large area and superior micro-area spectroscopy
performance suitable for semiconductor process development. In
this presentation, we will provide an overview of basic theory,
practical aspects, and application of scanning XPS in semiconductor
wafer process.
[email protected]
BIO
DR. TONY CHEN is facility manager of CEMN, Portland State University.
Previously he worked as a research scientist at Monsanto Company for
two years and as a senior member of technical staff at Maxim Integrated
Products Inc. for a year. Dr. Chen received his Ph.D. in materials science
from the University of Birmingham. He spent five years at the University
of California, Santa Barbara and Brookhaven National Laboratory doing
postdoctoral research. Following this, he worked as the chief scientist at
the University of Louisville, in charge of TEM, SEM, XPS and XRD facilities
and analytical services. As one of PIs, he acquired a scanning ESCA
microprobe through NSF-MRI funds at PSU. Tony’s research interests
are focused on microstructural characterization using electron microscopy
and spectroscopy in materials science, nanoscience and technology,
semiconductor devices.
Advanced DB techniques: STEM and GFIB
ABSTRACT
Terri Shofner
SEM Lab Supervisor
Lam Research
terri.shofner@
lamresearch.com
This presentation shows the practical methods employed in the lab for
processing challenging samples with a dual beam FIB. First it will discuss
STEM techniques for features <20nm. It will also explore end pointing
techniques using STEM imaging as well as utilizing the 360 degree
rotation of the newer flip stage on the FEI Helios 450F1 and Helios 460F1.
Lastly, it will review the glancing FIB method for removing an overburden
layer from a sample to inspect varying levels of depth through a device.
This presentation will be less about theory and more about practical
techniques of working with challenging samples without sacrificing
throughput in the lab.
BIO
TERRI SHOFNER has worked with Focused Ion Beam systems since 1997,
starting with Lucent Technologies and Bell Laboratories where she assisted
in the development of FIB methods of TEM prep using the ex-situ lift-out
technique. After this she was recruited as a Senior Field Applications
Engineer with FEI Company, and after taking a year to have a child she
returned as a circuit edit specialist with Intel Corporation. For the past 8
years Shofner has been with Lam Research at their Tualatin Oregon facility
(previously Novellus Systems). She has authored and co-authored
numerous technical articles, holds several patents and has presented
at conferences. She holds B.S. degrees in both physics and electrical
engineering as well as a Masters in Library and Information Science.
DAY 2: May 14, 2015 » Thursday 9 AM – 5 PM
Using EELS to open a window to the nano-world
ABSTRACT
Ray Twesten
Product Manager,
Analytical Instruments
Gatan, Inc.
[email protected]
In his historic lecture “Plenty of room at the bottom,” Feynman challenged the
community to “make the electron microscope more powerful.” 55+ years
later, we are still making the same challenge. We not only want to “see” every
atom in the material to determine its position, but we also want to know its
chemical state and how it is bonded to its neighbors. While we are still a
long way off from this goal in the general case, electron energy-loss
spectroscopy (EELS) can help answer some or all of these questions in
some specific cases. In this presentation, we will discuss the fundamentals
of EELS and energy-filtered TEM (EFTEM) and how these technique can reveal
composition, atomic bonding and chemical states at the nanoscale (and even
the atomic scale in some cases). We will draw from recent examples in
catalysts, complex oxides and semiconductors to illustrate these concepts.
BIO
RAY TWESTEN has been using electron microscopy to investigate
material since the 1990s using both standard and custom instruments.
He received his Ph.D. from the University of Illinois at Urbana-Champaign
(UIUC), was postdoc at Sandia Labs and staff scientist/lab manager at the
Center for Microanalysis of Materials at UIUC. Since 2005, Dr. Twesten has
been with Gatan in Pleasanton, CA, first with the EELS R&D group and
later as the manager of the EELS product development group. He is
currently the manager of Gatan’s STEM, EELS and Energy Filter products.
Transmission Kikuchi Diffraction for high resolution quantitative microstructural analysis in the SEM
ABSTRACT
Scott Sitzman
Applications Scientist
Oxford Instruments
scott.sitzman@
oxinst.com
Transmission Kikuchi Diffraction (TKD) is a relatively new way to perform
high resolution microstructural characterization, using a conventional EBSD
system in the SEM. As in TEM, it requires a thin sample, however its use of
a relatively low kV beam restricts the effective information depth to within
approximately 10nm of the bottom (exit) surface. This allows TKD to
analyze very fine grains even where sample thicknesses include more than
one grain, because diffraction information from material closer to the upper
surface is obliterated by subsequent incoherent scattering events. Although
special data acquisition considerations are important in TKD, the data
generated by the technique are identical in format to EBSD data, so all of
the post-processing tools developed for EBSD may be applied. Researchers
have used TKD to effectively study materials that are difficult to analyze by
conventional TEM and EBSD, such as highly strained, fine grained metals.
BIO
SCOTT SITZMAN is an applications scientist with Oxford Instruments
NanoAnalysis, specializing in EBSD. His B.S. and M.S. degrees (UCSB and
the University of Wisconsin—Madison) are in geology, with a minor in
materials science and an emphasis on characterization. He has worked
on EBSD at G.E.s Global Research Center in upstate New York, and later
at HKL Technology, now part of Oxford Instruments.
Quantitative microscopy: Strain and composition measurements
ABSTRACT
Vincenzo Grillo
Researcher, Istituto
Nanoscienze S3 and Istituto
dei Materiali per l’
Elettronica ed il Magnetismo
Visiting Assoc Researcher,
Dept. of Physics,
University of Oregon
vincenzo.grillo@
unimore.it
Electron microscopy in material science is often considered a useful tool
for imaging and for qualitative information on nanostructures. However the
development of modern techniques of analysis and simulation has taken
us to a more quantitative use of imaging under different conditions. I’ll
show my personal point of view and contribution on the advancement of
computer-aided microscopy in recent years. To this purpose I’ll show a
few relevant applications on nanoparticles, nanowires and nanostructured
materials. Most applications will demonstrate the possibility to map strain
and to obtain local chemical information from direct image analysis or
aided by simulations. Finally I’ll describe future projects to get even more
accurate chemical information from STEM imaging, pushing toward fast
3D chemical analysis.
BIO
VINCENZO GRILLO was born in 1973 and graduated in Physics in Genova in
1997. He received his Ph.D. in Electron Microscopy at Parma University and
Erlangen University (Germany). In 2001 he was post-doc fellow at the Tokyo
Institute of Technology, working on cathodoluminescence in TEM. Since
2003 he has been working at CNR as a researcher in electron microscopy.
He has developed innovative (S)TEM methodologies, e.g., he published the
first quantitative use of STEM with HAADF detector for chemical analyses.
He also carried on advanced characterization of nanoparticles, nanowires
and layered structures. He has now moved to Vortex beams and holographic
beam generation: he contributed to some important publications in this field
and recently joined McMorran Group for a sabbatical. He has received
several invitations to international seminars and conferences and received
the SISM prize as distinguished young Italian microscopist. Vincenzo Grillo is
co-author of 80 international articles and chapters on books.
Nanofabrication at the sub-10nm length scale using inert ions
ABSTRACT
Soeren Eyhusen
Product Marketing
Manager
Electron and Ion
Microscopes
need email address
Ion microscopy with helium or neon beams created from a gas field ion
source (GFIS) shows great potential and flexibility for many imaging and
nanofabrication applications. Due to the small probe size and the high
precision of the ion beam, sub-10 nm structures can be routinely
fabricated even in very sensitive materials such as graphene. In contrast
to focused gallium ion beams, helium and neon are inert ion species and
leave no chemical contamination in the processed sample. Additionally,
the beam-sample interaction dynamics of helium/neon ion beams offer
unique contrast and stunning surface detail at sub 0.5nm lateral
resolution. In this presentation, we will provide an overview of helium
and neon FIB applications as well as report on new innovations on
sample preparation and 3D nanotomography.
BIO
SOEREN EYHUSEN has a background in materials science and ion beam
physics. After receiving a PhD from Goettingen University, Germany.
In 2005, Soeren joined Carl Zeiss NTS Research and Development in
Oberkochen focusing on electron microscopes and focused ion beam
systems. He specializes in the area of electron optics and system
integration. In 2012, he moved to the United States where he has been
working as a product marketing manager for electron and ion beam
microscopes for Carl Zeiss in Thornwood, New York.
AV
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HALL
HOFFMAN
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PARKING
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BLACK
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MEMORIAL
STUDENT
UNION
MILLER
LIBRARY
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CTR
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FOURTH AVE
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SMITH MEMORIAL STUDENT UNION
• Walk out of the parking garage and follow
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• Cross the Park blocks and turn right (south)
• Enter Smith Memorial Student Union from
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• Head upstairs to the second floor to Room
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CLA
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• Follow signs to Hwy 26
• Take Exit 1D to 12th Avenue
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TR AI N I N G W O R K SH O P
» MAY 13- 14 , 2 0 1 5
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Parking Directions
PAYING FOR PARKING
Pay Stations are
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405
ART LOT
LINCOLN
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PLACE LOT
SCIENCE BUILDING 1
• Walk north on the Park blocks and turn left
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SEMI N AR (1)
May 13
8am – 12:45pm
H AN DS - O N D E M OS ( 2 )
May 13
1pm – 5pm
SEMI N AR (3)
May 14
8am – 12:45pm
H AN DS - O N D E M OS ( 4 )
May 14
1pm – 5pm
Smith Memorial Student Union, Room 236
Center for Electron Microscopy and Nanofabrication, Science
Building 1, Floor B (Basement), Room 22
Smith Memorial Student Union, Room 236
Center for Electron Microscopy and Nanofabrication, Science
Building 1, Floor B (Basement), Room 22
Oregon Nanoscience and Microtechnologies Institute • P.O. Box 2041, Corvallis, OR 97339 •
W W W. O N A M I . U S
• 541.713.1348