93 Sensors md Actuators A, 37-38 (1993) 93-105 Capacitive sensors: when and how to use them* Robert Puers Katholreke Unrversltelt Leuven, Departement Elektrotechmek, ES A T -M I CA S , Kardmaal Merclerlaan 94, B-3001 Heverlee (Belgmm) Abstract Capacitive sensors for the detectIon of mechamcal quanhtles all rely on a displacement measurement The movement of a suspended electrode with respect to a fixed electrode establishes a changmg capacitor value between the electrodes This effect can be measured and if the mechamcal quantity controls the movable electrode, a sensor 1s reahzed Smce the value of the capaator IS dmzctly related to Its size, and a small capacitor means high noise susceptlblhty, capantlve sensors should be as large as possible Capacltlve pressure sensors have been developed mth success for mdustrlal applications, where large membrane sizes are not a cntlcal Issue However, most centres of expertise m s&con sensors show an interest m exploltmg &con technology to produce capacltlve pressure sensors as well From the above, this mmlaturlzatlon trend appears to be an unsound Idea On the other hand, the prmclple of capacitive sensors allows the reahzatlon of measuring systems with so far unknown performance Indeed, the capacltlve sensor reveals dlstmct advantages when compared to Its plezoreslstlve counterpart high sensltivlty, low power consumption, better temperature performance, less senatlve to drift, etc Nevertheless, only a minor fraction of the market for pressure sensors 1s taken up by capaatlve-type sensors When observing the characteristics of capacitive sensors, It may seem surpnsmg to encounter so few devices m real-world apphcatlons The reasons for the lack m breakthrough can be found m the design complexity and the requirements for a matched sensing circuit This paper will extensively discuss the Justlficatlon of the choice for this research effort, and will elaborate on the techniques to fabricate the devices based on electromc manufacturmg procedures BasIcally, slhcon capacitive sensors differ from plezosensors m that they measure the displacement of the membrane, and not its stress! This has important lmphcatlons on the final assembled device less package-induced problems can thus be expected However, a far more Important Issue 1s their extremely high sensltlvlty, together with a low power consumption These ISSUES make them especially attractive m biomedical implant devices, or m other telemetry applications, where power 1s not randomly available So far, this 1s the only field of success for these sensors However, due to the mterestmg detectIon prmclple, new fields of apphcatlon emerge, offering unique and superior performance when compared to avallable sensors Umaxlal accelerometers are a good example, where extremely high cross-sensitivity reduction can be obtained Introduction sensors ~11 generate an electrical signal as a result of the elastic deformation of a membrane, as 1s the case for other sensors, such as the plezoreslstlve types However, It 1s not the bulk-up stress m the membrane that causes the stgnal, but rather Its displacement This phenomenon 1s the essential difference from other sensors and results m unique properties, which will be illustrated later on The basic structure of a capacitive sensor always consists in a set of plates of surface A separated by a distance d (Fig 1) One obtains for the capacitance value at rest d Capacitive-type Co=& 0a where E 1s the dlelectrlc constant (pernuttlvlty) of the medium between the plates (usually air) One can see Rg 1 SchematIc representation of a capacitor, consistmg of two plates and a dlelectnc v&h thickness d To the nght, the non-parallel movement of the plates IS represented that to change the capacitance value, one can either change the surface of or the distance between the plates Most capacitive sensors rely upon the change of the distance d rather than the change m surface A, although the latter phenomenon IS mtnnslcally linear The reason has to be sought m a more elaborate structure and hence a more difficult assembly [l] If one IS able to deform the dlelectnc layer over its entire surface with the distance Ad, such that the plates remam parallel, one has *Invited paper 09244247/93/$X500 @ 1993 - Elsewer Sequoia All nghts reserved 94 From cqns ( 1) and (2), and for Ad c<d, one obtams c Ad ,=‘-Jwhich reveals a linear relatlonshlp From eqn (1) one can also obtain the expression for the sensltlvlty of this sensor A AC dd=-5 which illustrates that the sensltlvlty will increase with the square of the distance d between the electrodes For a small gap a high sensltlvlty can thus be expected However, most sensors cannot be constructed such that expression (2) 1s valid, that is, the plates often do not move m parallel In most cases the capacitance change will be caused by a deformation of one of the electrodes Itself (see Rg 1, nght) Expressions (2) and (3) no longer hold Equation (2) should be wntten as a a x=oy=o where w, a function of x and y, represents the local deflection as a consequence of the pressure One can define u as the mean value of the displacement of the entire electrode a 0 1 o=w dx dy ments must be done mslde the patlent, they require extremely stable, temperature msensltlve and accurate devices Sohd-state strain-gauge devices have already been on the market for a long time [3] and have been widely used for arterial pressure measurement for more than 20 years [4] Whereas these systems are very useful and accurate for measuring dynamic pressure changes, they show deficlenaes when It comes to long-term measurements of low-pressure signals This 1s because these sensors dnft about 100 Pa per day If the pressure signal 1s in this range, they become unsrutable A posslble solution 1s the use of fluld-filled catheters, which are coupled to precise manometer systems outside the patient However, this approach IS generally accepted to be cumbersome, may cause inaccuracies m dynamic signals and restrains the patient It 1s unsuitable for application m telemetry devices Moreover, for such apphcatlons, the power consumption of the sensor and its signal-processmg network become Important, since telemetry system have to rely on a battery The limited amount of power makes the use of plezoreslstlve devices difficult, especially for long-term contmuous momtormg This 1s especially the case for implantable systems, where the size of the battery must be kept to an absolute mmlmum, or where even no battery can be tolerated [5] These conslderatlons gave nse to the development of capacitive-type pressure transducers to achieve an improved static accuracy [6,7] and to provide low-power operation of the en&e system A Construction methods so eqn (5) becomes AC=C&$=C,,(;) (7) The sensltlvlty to pressure can be obtained from this expression There 1s a non-hnear relatlonshlp If, however, the displacement IS small compared with the membrane thickness, v equals about one quarter of the maxnnal deflection at the centre of the membrane [2], allowing an estlmatlon of the performance of the sensor to be made In contrast to piezoresistlve or any piezosensitive transducers, for the capacitive type of sensor the stress in the membranes 1s of no direct relevance to the transduction phenomenon From a constructlon vlewpomt, this offers distinct advantdges, for example, a much larger tolerance can be accepted with respect to the deposited structures on the membrane In fact, the membrane itself acts as a transducllon medium, and not the deposited structures (e g , resistors have to be placed very accurately to obtam maximal sensitlvlty, and are very susceptible to mlsahgnment) Justdicatioo of capacitive sensors Complete dwcrete construction In order to understand the underlying reasons for the growing research m this field, one has to consider the hrmtatlons of the so-called well-established techniques, such as the plezoreslstlve devices One of the fields that has always been looking ahead for more and tighter speclficatlons for sensor systems 1s without doubt me&cal engmeenng Many pressures can and must be monstored m the human body m order to allow proper dlagnosls and therapy Smce some of these measure- Given its mtrmslc slmphclty, the capacmve sensor construction 1s not that obvious First there are the specific requirements with respect to the tolerances m the construction, especially concerning the electrode separation Moreover, the choice and homogeneity of the dlelectnc layer are not evident Discretely built sensors have been realized m commercial apphcatlons, for apphcatlons requumg a high sensltlvlty or for smallsignal differential pressure measurements (e g , m flow- 95 Differential Fig 2 Example of a commermal chfferentral capacltw pressuremeasuring deuce The diameter of the membranes IS about 10 cm, and the output 1s dehvered under the 4-20 mA standard measuring devices) Figure 2 Illustrates a cross section of such a device [8] Since parasltlc effects should be reduced, these sensors are generally large constructions, because the capacitive value (at rest) 1s directly proportional to the surface, and the parasitic capacitance remains approximately constant For mdustrlal control systems the large size IS usually acceptable Figure 3 Illustrates two capacitive sensors, built for medical Implant devices The one on the left 1s a sensor built to cope with the drift problems of strain-gauge sensors It was intended to monitor mtracramal pressure [9], and 1s a good example of what the state of the art was some 15 years ago The size of the sensor 1s 7 mm by 2 mm, with a spacing of 25-75 pm between the diaphragm and Its base The conductive metal surface, which forms the fixed electrode, 1s fired on a glass layer The zero-pressure capacitance was 8 pF, and varied up to 16 pF for a 100 kPa signal On the right-hand side of the Figure 1s a more recent version of the same construction, Introduced for use m cardiology Here, the prime concern was high sensltlvlty coupled to small size and low power consumption, since the device 1s intended for long-term lmplantatlon [lo] A htanrum barrel of 2 5 mm diameter IS filled with a glass slug, fused to its inner wall A layer of gold 1s sputtered on the concave surface of the glass, and the movable counter electrode 1s welded consecutively One obtains titanium pressure a capacitance value of a mere 1 5 pF A slgnal-modulatmg clrcult IS added to boost the output of the sensor so that It can be transmitted over the long catheter wires The entire system 1s encapsulated into a hermetically sealed tltamum package for hocompatlblhty purposes It IS developed by a commercial pacemaker company (for automatic defibrillator triggering) Though the fabrlcatlon sequence IS extremely difficult, these kmds of sensor constructions still seem to be very attractive to designers, with slmphclty as the key issue to Justify their use As another example, the capaclhve prmclple has also recently been proposed for the detectlon of angular position [ 111 Here, printed clrcult board technology 1s used to form overlapping patterns on two different boards, which change their common surface with changing angular position Hence, the total capacitor surface A 1s changed, and thus C varies The conductrve surface (electrodes of the capacitor) 1s shaped m order to Improve the linear relatlonshlp with the angle Thick-film technology Since most mecharucal sensors are m a rather high cost-price category, the relatively low fabrlcatlon cost of thick-film clrcults seems an attractive altematlve for the realization of sensors This has been extensively the case for plezoreslstlve sensors, where for large-market apphcations, such as the automotive sector, successful designs have been elaborated [ 121 Capacitive devices can be realized m thick-film technology as well, although vu-tually no research has been performed m this directloo Standard thick-film technology allows capacitors to be realized usmg a multilayered structure Special pastes with a high dlelectrlc constant are available to obtain a reasonable capacitor value with a small geometry However, the compliance of this dlelectnc, mostly consisting of a glass matnx, 1s virtually zero, rendermg the structures lmpractlcal for sensor use Other matenals should be adopted Slhcone rubber IS one of them This has been exploited m a device [ 131 by usmg flexible polylmlde film carriers Figure 4 shows a thick-film vanant of this sensor, a force transducer It will gve a better linear performance when fabricated m thick-film membrane port Fig 3 Examples of &scretely built capacmve pressure sensors left, an early intracranial pressure sensor (7 mm diameter, thickness = 12 pm), right,, a more recent vewon (2 5 mm chameter) for apphcatlons m carrhology membrane ;c Rg 4 Capacltwe ant d~electnc electrode thrck-film force transducer matrix substrates Sllastlc 382 based on a comph- technology, since the ceramic substrates give more nglQty to the mdlvldual electrodes Another possrblhty IS to make use of the mechanical properties of the ceramic substrate itself, and measure the deflection of a suspended membrane by the capacitive principle This comes close to the device of Fig 2, but there the ceramic electrode Itself does not flex The only apparent drawback, I e , the low mltlal capacltlve value, typically between 1 and 20 pF for this structure, can well be overcome by rncorporatmg some impedance converting network on the same thick-film substrate The field IS still open for some good (and inexpensive) research’ Sdtcon technology The use of silicon as a constructlon material has long been demonstrated and has been exploited by many centres [ 141 Some 20 years ago, the first major efforts were undertaken to fabricate mlmaturlzed sensors based on exlstmg processing sequences used m electronic clrcmt fabncatlon, and expandmg these to smt the specific requirements for the realization of novel devices These new techniques or processmg sequences are often referred to as mlcromachmmg This mvolves all kinds of three-dlmenslonal structunng of s&con to fabncate mechanical sensors The first efforts were pnmanly aimed at the feaslblhty of the reahzatlon of sensor devices as such, focusing prunanly on the performance of the transducmg mechamsm of these sensors, and looking mto posslblhtles to realize specific mechanical structures [ 15- 191 However, sensors always have to be considered as part of an overall system, where they act pnmarlly at the input stage of a usually complex process Therefore, and also because the (electrical) signal out of the transducer IS usually extremely weak, the sensors must be essentially coupled to some electronic networks to enhance and process then signals Smce the sensor devices are fabricated m s&con, the idea of integrating electronic networks on the same die 1s quite natural However, from the fabrication technology vlewpomt, this approach IS far from natural Sensor fabncatlon requires dedicated processing sequences that conflict with circuit processing, lmpedmg the merging of both devices m the first attempt However, by careful processmg sequence design, one can achieve posltlve results Often, the circuit processmg will have to be performed at the begmnmg, then the wafers are postprocessed m the mlcromachmmg foundry With respect to the more usual plezoreslstlve devices, the specdic ments of capacltlve devices have to be found m their slmphclty, I e , they reqwre less extensive processing (only an electrode 1s needed) on the membrane, and are less susceptible to mlsahgnment errors [20] Once a process has been set up, a high degree of reproduablhty can be expected This apparent ‘slmphclty’, however, should be considered carefully The mterelectrode distance IS a very important parameter m the design and fabrication, and any lack of control will be reflected m a loss of reproduablhty Figure 5 shows a common layout of such a capacitive sensor Mlsahgnment m the x or y direction will have mmor influence on the performance of the device However, tight control of the distance z 1s mandatory for a reproducible device z m fact reflects the distance between the two electrodes This can be affected both by the cavity depth and by all the intermediate layers between the glass and the slhcon wafer Special care must be taken with the feedthrough of the electrode connections to the bonding pads (or the processing network) It 1s best to make use of a dflused layer m order to mmlmlze step coverage failure On the other hand, an ahunuuum path 1OOnm thck can still be bonded hermetically The Figure also reveals two possible mterconnectlon schemes The one at the right 1s best with respect to a parasltlc capacitance, smce the two bondmg pads are on the highly lsolatmg glass layer The mterconnectlon Rg 5 Usual construction for a bulk nucromachmed &con capacitive pressure sensor on the sdlcon The arrows define possible nusahgnments in the assembly Contacts can be made on the glass substrate or 97 on the left 1s preferable when electromc processing circuitry 1s added No matter what method 1s selected, care must be taken m dlcmg the bonded wafers one of the wafers, usually the glass one, must be cut precisely m order not to touch the underlying structure Also, tlus underlying structure should, evidently, not be bonded to the glass, which requires special precautions m the design stage This means that, although mtrmsically much simpler then the plezoreslstlve device, the biggest challenge of the capacitive device hes m its packaging This also forms the ongm of most of its problems One of the speclficatlons directly influenced by the packaging techmque 1s the temperature sensitivity of the sensor depending on the sealing technique one can realize absolute, relative or trapped-gas pressure sensors The first 1s sealed under vacuum, the second 1s sealed such that the reference chamber has a connection with the outslde world or any other medmm (to reahze a differential measurmg set-up) In the case of entrapped gas, extra non-lmearlty 1s added for two reasons first, the gas Itself will be compressed for any movement of the membrane This effect can be dlmmIshed by provldmg extra volume m the sensor reference cavity, e g , at the edge of the sensmg membrane The effect of thermal gas expansion, on the other hand, 1s much larger, and cannot be reduced by any means It can reach values of up to 1% of full scale per “C The only solution 1s to use vacuum-sealed pressure sensors Overmew of developed devices An attempt 1s made here to give an overvlew of capacitive devices currently under development or of devices which have been demonstrated so far Table 1 gives the most important details of about 40 different or related capacltlve-type sensors, all fabncated m slhcon technology Although it would be mtngumg to comment on all of these papers, time and space do not allow us to do so It 1s therefore left to the reader to pick out relevant devices to assess his own state of the art In this text, only a fraction of the Table will be discussed This will be done to Justify the arguments pven here and to illustrate general research pohcles Pressure-sensmg dewces First, It 1s apparent that the pressure sensor IS the most successful device (600/o),at least at the early stages of research m this field This has to match the field of apphcatlon most of the devices are developed with low power consumption m mmd Indeed, a capacitive device consumes Just as much power as Its measurmg circmt The nmnedate apphcatlon lies m the blomedlcal field, where (especmlly for telemetry purposes) reduction of power consumption 1s the maJor design cnterlon The first devtce was developed for use m cardiology [21], and almed at low power consumption In a second version, an oscillator clrcult was added m bipolar technology to yield an overall current dram of 20 pA at a supply from 2 5 to 10 V Figure 6 illustrates a cross section of this ploneenng structure It has been steadily nnproved to incorporate more advanced electronics (for temperature compensation) and finally to include a dummy reference capacitor [22,23] Ko and his co-workers mtroduced the idea of mcorporatmg a dummy capacitor in the same cavity to reduce the effects of parasitic capacitance They also compared square with circular shaped electrodes and illustrated that the highest sensitivity can be obtamed for a circular electrode (of about 36% of the central area of the diaphragm [24,25] Pressure sensors for blomedlcal apphcatlons were the very first technology drivers to simulate research m this direction [26-281 Numerous devices followed the first ones, ullth ever-decreasmg sensor sizes Rest capacltlve values of a mere 0 5 pF [29,30] and, m a later development stage, even going down to 0 3 pF [31], have been reported by the Mlchlgan group of Wise Evidently, such low mtnnslc capacitive values cannot be handled wlthout the matchmg arcmtry close to them In the last two papers, the capacitor and the processmg network were separate chips, avoldmg compatlblhty problems when trymg to merge the two devices on one die An interesting approach to further munaturlzmg the size was proposed in ref 30, where first anodlc bonding 1s performed, after which almost the full frame of the membrane die 1s etched away (see Fig 7) This 1s an excellent example of how standard techniques can still lead to novel and successful designs The arcult chip can be processed by any foundry The only drawback of this approach 1s the protection of the clrcult chip when applied ~1 uvo The group of Esaslu m Japan has proposed a senes of mterestmg combmatlons of sensors wth a matched measuring circuit m one package [32-341 All of these devices are based on the approach of first bonding the wafers and then doing a consecutive backside etch to yield a high degree of mmlatunzatlon Furthermore, a special technique 1s adopted to connect the device all electromcs are encapsulated, and only the backside of the capacltlve membrane 1s exposed to the outside world To contact the electronics, a glass feedthrough 1s realized by ultrasomc drdlmg, sputtermg coating of the hole and finally connecting the lead wire by conductive epoxy (see Fig 8) Although the seahng 1s more advanced in this device, more caution 1s reqmred for the realization of the CMOS/mlcromachmed device chip In the search to improve sensor speaficatlons many more solutions have been proposed Special concern Year 1980 1982 1982 1983 1984 1985 1990 1986 1987 1987 1987 1989 1989 1990 1990 Authors Sander, Knuttl and Memdl Ko, Bao and Hong Lee and Wise Ko, Shao, Fung, Shen and Yeh Snuth, Pnsbe, Shott and Memdl Hanneborg and Ohlkers Srmth, Bowman and Mandl Chau and Wise Mlyoshl, Akxyama, Shmtaku, Inann and HtJklgawa ShoJl, Nwse, Esasht and Matsuo Furuta, Esashl, Shojl and Matsumoto Puers, Peeters and Sansen Backlund, Rosengren, Hok and Svedbergh Kandler, Elchholz, Manoh and Mokwa 2x6 4x4 pressure pressure 10 2x3 array 81 x loo P0 3x3 pressure pressure 2x35 2 25 10 35 8 35x07 05 1X5 sacrificial layer, polysilicon KOH bulk bulk, KOH bulk, KOH bulk, EDP surface etch EDP, bulk bulk bulk 7 22 bulk bulk, hydrazme bulk, KOH 22 6 12 bulk, 7 hydrazme bulk Etch 22 G (PF) 7 pressure pressure pressure pressure pressure 2x6 2x4 pressure pressure 4x4 2x4 3x3 Dunenslons (mm’> pressure pressure pressure Type TABLE 1 Detads of capacltlve-type sensors fabncated m s~bcon technology na fusion bonding anodx anodx &on Sl-SI na anodlc anodlc sputtered glass anodlc ano& anodx anodlc ano&c Seal SC CMOS LC clrcmt only no separate, CMOS CMOS il0 separate mtegrated oscliIator, bipolar 10pm separate ctip Integrated os&Iator, bipolar 10 pm Integrated CMOS separate integrated, bxpoIar general eye-pressure general car&o blomedlcal general cardlo cardlo general cardlo blomed~cal general general cardlo schmltt oscdlator, hpolar Apphcatlon Circutt prehmmary results LCtuned by pressuretransponder system FEM analysts & hneanzation small assembly, complete backslde etch direct f&on bondmg NI dtaphragm, sacnticxil layer, cheap large batch prod mnuatmxzed companscm with plez,oresistive devices low TCO and dnft temperature compensation ref capacitor Integrated wzth sensmg capacitor effect sealmg on TCO and TCS membrane, drxft aspects ring versus square early device Dtscusslon 47 69 39 33 27 49 30 23 36, 37 22 25 26 24 21 Ref 3 99 bulk, EDP bulk surface etch bulk. KOH bulk, hydrazme 10 16 10 9 9 12 15 X2 28x36 7x1 35x35 3x4s 3x45 *5x5 36x36 5x6 accelerometer accelerometer accelerometer accelerometer accelerometer accelerometer accelerometer accelerometer 1988 1990 1990 1990 1991 1991 1991 1991 Schlaak, Arndt, Steckenbom, Gevatter, Qesewetter and Grethen Muck, Olney %del, Rledel, Kolbeck, Kupke and Komger Suzuki, Tuclutam, Kate, Ueno, Yokota, Sato and Esash~ Kloeck, SW&I, TucIntam, Mlkl, Matsumoto, Sato, Kolde and Sugsawa Payne and Dmswood, and Goodenough Peeters, Vergote, Puers and Sansen Ura and Esashl bulk bulk bulk KOH bulk 20 8x6 accelerometer Rudolf, Jomod, Bergqvlst, Leuthold and Bencze 1987, 1990 Etch G (PF) Year Authors Dunenslons (mm’) 1 (continued) Type TABLE anodlc fusion bond + anodlc na anodlc anodlc anodlc anodlc ano&c Seal 59 65 66 61 62 transparent electrodes on glass allow observation fully integrated device, no bulk nucromachmmg highly symmetrical,,“› tunable damping s&on-oxnutnde suspension general automotlve general general Integrated CMOS separate separate 57 servo actlon general separate 58 64 55, 56 60 device pg Ref good hneanty pg resolution, symmetnc suspension commercial force balancmg resolution Discussion general positlon sensmg space, fight control spacecraft Apphcatlon separate separate separate separate Circuit z 101 bond.lng pads \ bipolar Fig 6 The Stanford 1980 capacltlve pressure sensor, measunng orlglnal 3 mm x 3 mm and mcorporatmg size transducer a bipolar convertmg cmxnt, as proposed m chip glass carrier Rg 7 In order to obtam mnumal size, the sensor chip IS firstly anodlcally bonded to the glass carrier, and then etched down usmg EDP, which stops on the boron-doped ddked structure, forming the mmlature frame and membrane (dotted hne shows the ongmal chip size) The processmg chip dself IS embedded m a cavity m the glass carrier Al wire glass counter Part f \electronlc Fig 8 Fully sealed device mcorporatmg an electronic detection of the capacmve changes A glass feedthrough the connechon to the outslde contact epoxyglue clrcult nrcult for provides has been gven by the Norwegan group [35-371 to lower stress effects m the membrane (which cause temperature effects m the sensltlvlty curve) fis can be achieved by retammg the idea of bonding the s&con chip to a glass carrier, but usmg thm sputtered glass layers on slhcon substrates instead In conJunction, many efforts have been spent m better understandmg capacitive transducmg phenomena, and more precisely many proposals have been made m order to reduce parasmc effects, either by special arcmtry or by specific electrode configurattons, and-to look for a better lmear response of the device [38-431 Also, more recently, more and more efforts are being made to merge CMOS processes vvlth capacltlve pressure sensors [44-481 The mam drive behind this approach 1s to mmmnze parasitic effects, and to look for acceptable process flows for the slbcon foundries This has partially Rg 9 Prmctple of a surface nucromachmed pressure sensor by etchmg the oxide from underneath the polysdlcon, a cavity can be created The doped p+ regton IS used as the movable electrode for the sensor become possible by the use of sacrficlal layer technology, first introduced by Guckel and Burns [49] The method consists m etchmg away the silicon dloxlde from between the upper LPCVD polyslhcon and the n-type slhcon, as shown m Fig 9 A cavity 1s reahzed, which 1s equal to the orrgmal oxide tluckness, e g , 1 m The formation of stress-free polysticon IS a possible tic&y, but the advantage 1sa higher yield per wafer (since no space-consummg backside etchmg 1s reqmred), and an automatic over-pressure stop for pressure sensors [50] Also, the double-sided alignment that ISreqmred m bulk nucromachmmg can be avoided Moreover, this process 1s fully compatible Hrlth the standard CMOS process Other approaches were to use an alternative to alkalme-based etchants, such as TMAH, to perform the bulk etch of the &con, thus avoldmg possible contamination of the CMOS process by KOH [51,52] 102 Accelerometers Accelerometers form the second type of devices for which the capantlve measuring prmaple has proved successful Although the first devices, developed only ten years ago, were rather prlmltlve [53,54], the first one showed a degree of mlnlatu~zatlon never obtamed m any of the later devices It conslsted of a cantllevered beam, made out of slhcon oxide, the end of which was provided with a deposlted dot of gold, which acts as a selsmlc mass The capacitance value was a mere 4 fF, such that a buffer stage had to be Implemented on the same dre, m l~edlate proxmuty of the cantilever The second device was nothing more than a suspended plate that served as the selsmlc mass The device was soon developed into a more sensitive accelerometer, using a mesa structure to detect the acceleration [5.5,56] The capacitive prmclple also allowed It to be used recrprotally, 1e , by applymg an electrostatic voltage, the electrode can be reposItioned urlth respect to the or?glnal drlvmg force By domg so, the voltage reqmred to restore the equlhbnum posltlon becomes a measure of p7740 Pymx the acceleration Thrs principle IS better known under the term ‘force balancmg’ and became popular m accelerometer development because It allows the range of the device to be expanded by several orders of magnitude [ 57-591 Other designs do not focus on fork-clang systems, but concentrate on the geometry of the structure as a means to Improve the dynamic behavlour One posslhhty 1s to look for highly s~met~cal structures The lmmedlate merrt of this approach IS to obtain extremely high cross-sensltmlty reduction [ 60,611 Both the symmetry of the structure and the capacltlve detecbon prmclple guarantee a speaficatlon of this parameter which 15 some orders of magnrtude better than that of the best commercial devices m other technologies Fjgure 10 gves a thr~-dImensIona nnpresslon of this accelerometer In some designs, the sprmg elements of the accelerometer are no longer s&con and other layers can be used This IS espectally the case for designs where rmmaturlzatlon becomes Important the size of the selsmlc UCASO Rg 10 Three-drmenaonal wew of a fully symmetric accelerometer, reahzed as a four-layer structure, mcludmg both s&on fusron and anodlc bonding [61] 103 mass becomes too small to be susceptible to the desired acceleration Thinner suspension systems can be a solution In two cases, slhcon mtnde membrane 1s used [62, 631 The first uses a set of 64 slhcon mtrlde beams to suspend the selsmlc mass, whereas the second device uses a composite membrane of nitride and oxlmtnde m order to cancel stress effects This device can therefore be made as small as 1 mm x 1 mm x 1 mm It is intriguing to encounter fully commercial capacitive acceleration sensors, a fact which does not appear wth pressure sensors The reason has to be sought m the fact that the capacltlve principle allows for a much better performance than any other detectlon prmclple This IS particularly the case m space and military apphcatlons, where there 1s a strong need for precise accelerometers The Endevco device 1s a good example [64] of such a commercial product It contains a wellcalculated damping system, and it IS shown that the device 1s much more sensitive, stable and has a higher resonance frequency than Its plezoreslstlve counterpart Another commercial product 1s the Analog Device acceleration sensor, developed for the automotlve sector (alrbag system) [65,66] It 1s a very interesting device, built around an mterdlgltlzed structure, realized by reactwe Ion etching of a free-standing polyslhcon layer (surface mlcromachmed) The axls of sensltlvlty IS thus m the plane of the sensor Itself What IS surprlsmg is to see this company, with so far no known experience m mlcromachmmg, capable of putting a high state of the art device into the market (surface nucromachmed, chip surface = 10% sensor, 90% slgnal processmg, meludes force balancing, sensltlve m the chip surface), obviously dwarfing all the research efforts of so many other centres TONOMETER MODULE PMMA LENS L--I--I---- Rg rmmvw!%oIIp I1 Schematic drawmg of the postenor chamber lens, telemetnc tonometer equpped with the Example of blomedtcal deuce development A good example for the Justified application of capacitive sensing prmclples IS the blomedlcal field, especlally when mformatlon has to be transmltted from the mslde of the (human) body to the outslde world For such telemetry systems, low power consumption, high sensltmlty, low temperature drift and a good stablhty of the sensors are a prerequlslte Capacltlve sensors can cope with these demands As an example, the project of eye momtormg 1s gven In ophthalmology, the eye pressure 1s an important parameter However, it IS a very slowly varying slgnal and 1s moreover very small m comparison v&h the atmospheric pressure which on average lies 2000 Pa above it, mth a dally cychc vanatlon m the range of 500 Pa In order to be able to monitor this signal on a contmuous basis, implantable eye-pressure momtonng devices have been proposed They all rely on capactttve sensors [5,67,68] Whereas the first two rely on a purely passlve system (one C, one L whtch act as a resonant arc&), the last approach 1s a fully active device, which picks up Its power from a tuned co11 system It was developed m our laboratory by Van Schuylenbergh and Peeters, and IS dlustrated m Fig 11 [ 51 A commercially available PMMA lens IS machined down to leave only the central optic part A cyhndncal space of 3 5 mm ID and 8 mm OD by 0 5 mm is available Total power delivery by the tuned cod system IS hrmted to 100 VW The Figure illustrates the cn-cular tamer m glass, which contams the receiving co11 on Its bottom part, and the mterconnectlon dlagram for the electromc circmts and the (fixed) sensor electrode at the top side A dedicated switch capacitor clrcmt 1s used to make a dflerentlal measurement between the reference capacitor and the pressure sensor The interface chip, shown m Fig 12, IS an adapted version of a former development [40], and runs at a mere 35 pA Fig 12 MIcrophotograph of the custom-designed CMOS switched capacitor circuit It measures 19 mm x 2 4 mm and accepts unregulated supply voltages between 4 5 and I5 V References 1 U Zelbstem, Capteurs de pression de fluIdes, m G Asch (ed ), L.es Capfeurs en Ins~rumerziatzonIndustrzelle, Bordas, Pans, 1987, pp 595-599 2 S Timoshenko and S Womowsky-Kneger, Theory of Plates and Shells, McGraw I&II, New York, 1959 3 E Komgsberg, Capablhtles of implatable transducers, m L Harnnson (ed ), Res Anzmals zn Med, DHEW (NIH) 72-333, 1973, pp 1145-1150 4 H Sandler, T Fryer and B Datnow, Smgle channel pressure telemetry umt, J Appl Physrol, 26 (I 969) 235 -238 5 K Van Schuylenbergh, E Peeters, B Puers, W Sansen and A Neetens, An unplantable telemetric tonometer for dnect mtraocular pressure measurements, Absrr 1st Eur Conf Bzomed Eng, Nzce, France, 1991, pp 194- 195 6 J Atkmson, D Shurtleff and E Foltz, Radio telemetry for the measurement of mtracramal pressure, J Neurosurg , 27 (1967) 428-432 7 T Fryer, Telemetry of intracranial pressure, BIorelemetry Patzent Monztorzng, S(2) (1978) 88-122 8 PhilIps Industrial AutomatIon, Dam sheet of PSC-Transmztter PD3 for DzflerentzalPressure and FIow Measurements, 1987 9 T Fryer, A pressure telemetry system utibzmg a capaatancetype transducer, Bzorelemetry III, Academic Press, New York, 1976, pp 279-282 IO A Moore and K Anderson, An Implantable chrome pressure sensor, Proc 4th Int Conf Sohd-State Sensors and Acruarors (Transducers ‘85). Phriadelphza, PA, USA, June 7-11, 1985, pp 189-192 II R Wolffenbuttel and R Van Kampen, An Integrable capacltlve angular dtsplacement sensor with Improved hneanty, Sensors and Actuators A, 25-27 (1991) 835-843 12 B Puers, S Pasczcynskl and W Sansen, Assessment of thick tilm fabncatlon methods for force (pressure) sensors, Sensors and Actuators, 12 (1986) 57-76 13 M Neuman, A Beret and E O’Connor, Capacitive sensors for measurmg finger and thumb tip forces, IEEE Fronlzers Eng Comp zn Health Care, 1984, pp 436-439 I4 K Petersen, S&on as a mechanical matenal, Proc IEEE, 70 (1982) 420-457 I5 K Bean, Amsotroplc etchmg of s&on, IEEE Tram Electron Dewes, ED-25 (1978) 1185- 1193 16 A Bohg, Ethylene dmmme-pyrocatechol-water rnlxture shows etchmg anomaly m boron doped silicon, J Electrochem Sot, 118(1971) 401 I7 T Jackson, M Tischler and K Wise, An electrochenncal P-N Junctlon etchstop for the formation of sdlcon nucrostructures, IEEE Electron Deuzces Letr , EDL-2 (1981) 4445 I8 G Walhs and D Pomerantz, Field assisted glass-metal sealing, J Appl Phys , 40 (1969) 3946-3950 I9 A Brooks and R Donovan, Low temperature electrostatic sihcon to slhcon seals using sputtered borosrhcate glass, J EIec@ochem Sot , 119 (1972) 545-546 20 S Clark and K Wise, Pressure sensmvlty m amsotropically etched thin-diaphragm pressure sensors, IEEE Tram Electron Deuzces, ED-26 (1979) 1887-1896 21 C Sander, J Knuttl and J Memdl, A monohthlc capacitive pressure sensor with pulse period output, IEEE Tram Elecbon Deuzces, ED- 17 (1980) 927-930 22 M Smith, M Pnsbe, J Shott and J Memdl, Integrated cm&s for a capacltwe pressure sensor, Proc IEEE Fronrrers Engzn Comp nz Health Care, 1984, pp 440-443 23 M Smith, L Bowman and J Memdl, Analysis, design and performance of capacltlve pressure sensor IC, IEEE Tram Bzomed Eng , BME-33 ( 1986) 163- I74 24 W Ko, M Bao and Y Hong, A high sensltwity Integrated Cmzuit capacltlve pressure transducer, IEEE Trans Electron Deuzces, ED-29 (1982) 48-56 25 W Ko, B Shao, C Fung, W Shen and G Yeh, Capacitive pressure transducers Hrlth Integrated arcmts, Sensors and Actuators, 4 (1983) 403-411 26 Y Lee and K Wise., A batch-fabncated &con capacltlve pressure transducer vvlth low temperature sensltlvlty, IEEE Trans Elecfron Deorces, ED -29 ( 1982) 42 -48 27 S Shojl, T Nlsase, M Esashl and T Matsuo, Fabncatlon of an Implantable capacltlve type pressure sensor, Proc 5th Int Conf Solzd-State Sensors and Actuators (Transducers ‘87), Tokyo, Japan, June 2-5, 1987, pp 305-308 28 J Sunnnto, G Yeh, T Spear and W Ko, Sdlcon diaphragm capacitive sensor for pressure, flow, acceleration and altitude measurements, Proc 4th Int Conf Solzd-Slate Sensors and Actuators (Transducers ‘87), Tokyo, Japan, June 2-5, 1987, pp 336-339 29 H Chau and K Wise, Scaling hnuts m batch fabncated slhcon pressure sensors, Proc 3rd Inf Conf Sohd-Stare Sensors and Actuators (Transducers ‘85), Phzladelphia,PA, USA, June 7-11, 1985, pp 174-177 30 H Chau and K Wise, An ultra-rnmlature solrd-state pressure sensor for a cardiovascular catheter, Proc 4th Int Conf Solzd-State Sensors and Actuators (Transducers ‘87), Tokyo, Japan, June 2-5, 1987, pp 344-347 31 J Ji, S Cho, Y Zhang, K NaJafi and K Wise, An ultramuuature CMOS pressure sensor for a multlplexed carchovascular catheter, Proc 6th Int Conf Sohd-State Sensors and Actuators (Transducers ‘91), San Franczsco, CA, USA, June 24-28, 1991, pp 1018-1020 32 K Furuta, M Esash~, S ShoJl and Y Matsumoto, Cathetertip capa&ve pressure sensor, Tech Dzgest, 8th Sensor Symp , Japan, 1989, pp 25-28 33 Y Matsumoto, S Shall and M Esashl, A numature mtegrated capawbve pressure sensor, Tech Dzgest, 9th Sensor Symp , Japan, 1990, pp 43-46 34 T Kudoh, S ShoJl and M Esashl, An integrated munature capacltlve pressure sensor, Sensors and Actuators A, 29 (1991) 185-193 105 35 A Hanneborg, T Hansen, P Ohlkers, E Calson, B Dahl and 0 Holwech, A new Integrated capantlve pressure sensor with frequency modulated output, Proc 3rd Int Conf Solui-State Sensors and Actuators (Transducers ‘85), PhdaaZphra, PA, USA, June 7-11, 1985, pp 186-188 36 A Hanneborg and P Ohlkers, A capaclhve &con pressure sensor v&h low TCO and iugh long-term stablhty, Sensors and Acfuators, A21-A23 (1990) 151-154 37 A Hanneborg, M Nese, H Jacobsen and R Hobn, Sihcon to thin film anodlc bondmg, MME’92 Workshop Dzgest, Leuuen, Be$rum, 1992, pp 9-19 38 B Puers, E Peeters and W Sansen, CAD tools m mechamcal sensors design, Sensors and Actuators, 17 (1989) 423-429 39 B Puers, E Peeters, A Vanden Bossche and W Sansen, A capacltwe pressure sensor with low impedance output and active suppression of parasltx effects, Sensors and Actuators, AZI-A23 (1990) 108-114 40 P Pons, G Blasquez and N Ratrer, Harmomc response of silicon capacitive pressure sensor, Sensors and Actuators A, 25-27 (1991) 301-305 41 V Artyomov, E Kudryashov, V Shelenshkevlch and A Shulga, Sihcon capaative pressure transducer with mcreased modulation depth, Sensors and Actuators A, 28 (1991) 223230 42 L Rosengren, J Soderkvlst and L Snuth, Mlcromachmed sensor structures mth linear capacltlve response, Sensors and Actuators A, 31 (1992) ZOO-205 43 P Pons and G Blasquez, Transient response of capacitive pressure sensors, Sensorr and Actuators A, 32 (1992) 616-621 44 B Puers, A Vanden Bossche, E Peeters and W Sansen, An Implantable pressure sensor for use m cardiology, Sensors and Actuaiors, A21 -A23 (1990) 944-947 45 J Kung and H Lee, An Integrated ax-gap capacitor process for sensor apphcations, Proc 6th Int Conf Sold-State Sensors and Actuators (Transducers PI), San Francwco, CA, USA, June 24-28, 1991, pp 1010-1013 46 M Kandler, J Etchholz, Y Manoh and W Mokwa, CMOS compatible capacitive pressure sensor with read-out electronics, in H Reich1 (ed ), Mxrosystems, Sprmger, New York, 1990, pp 574-580 47 F Schnatz, U Schoneberg, W Brockherde, P Kopystynslu, T Mehlhom, E Obermeler and H Benzel, Smart CMOS capacitive pressure transducer with on-chip calibration capab&y, Sensors and Actuators A, 34 (1992) 77-83 48 S Mlyoslu, H Akiyama, H Shmtaku, Y Inaml and M Hgdcigawa, A new fabmation process for capacltlve pressures sensors, Proc 4th Int Conf Sohd-State Sensors and Actuators (Transducers ‘87), Tokyo, Japan, June 2-5, 1987, pp 309-311 49 H Guckel and D Bums, Planar processed polyslhcon sealed cavities for pressure transducer arrays, IEDM Tech Digest, 1984, pp 223-225 50 H Guckel, D Bums, H Busta and J Detry, Laser recrystalhzed plezo-resistive micro-diaphragm sensor, Proc 3rd Int Conf Sold-State Sensors and Actuators (Transducers ‘85), Phdadeiphla, PA, USA, June 7-11, 1985, pp 182-185 51 H Terabe, Y Fukaya, S Salrural, 0 Tabata, S Sugiyama and M Esaslu, Capacitive pressure sensor for low pressure measurements with high overpressure tolerance Tech Digest, 10th Sensor Symp, Japan, 1991, pp 133-136 52 T Nagata, H Terabe, S Sakurai, 0 Tahata, S Suglyama and M Esasiu, D@al compensated capacitwe pressure sensor using CMOS technology for low pressure measurements, Proc 6th Inr Conf Sohd-State Sensors and Actuators (Transducers Pl), San Francrrco, CA, (ISA, June 24-28, 1991, pp 308-311 53 K Petersen, A Shartel and N Raley, MIcromechanical accelerometer integrated wth MOS detection cmxntry, IEEE Trans Electron Devices. ED-29 (1982) 23-27 54 F Rudolf, A nucromechamcal &pa&ve accelerometer with a two-point mertlal mass suspens,on, Sensors and Actuators, 4 (1983) 191-198 55 F Rudolf, A Jomod and P Bencze, Slhcon mlcroaccelerometer, Proc 4th Int Conf Sohd-State Sensors and Actuators (Transducers ‘87), Tokyo, Japan, June 2-5, 1987, pp 395-398 56 F Rudolf, A Jomod, J Bergqvist and H Leuthold, Preclslon accelerometers wth pg resolution, Sensors and Actuators, A21 A23 (1990) 297-302 57 S Suzuki, S Tuchltarn, K Sato, S Uneo, Y Yokota, M Sato and M E&u, Semiconductor capacitance-type accelerometer with PWM electrostatic servo techmque, Sensors and Actuators A21-A23 (1990) 316-319 58 H Schlaak, F Amdt, A Steckenbom, H Gevatter, L Kiesewetter and H Grethen, Mlcromechamcal capacitive acceleratlon sensor with force compensation, m H Relchl (ed ), Mxrosystems, Spnnger, New York, 1990, pp 617-622 59 B Kloeck, S Suzuki, S Tuclutam, M Mike, M Matsumoto, K Sate, A Kolde and Y Sugsawa, Motion mvesttgatlon of electrostatic servo-accelerometers by means of transparent IT0 fixed electrodes, Proc 6th Int Conf Sohd-State Sensors and Actuators (Transducers ‘91), San Frannsco, CA, USA, June 24-28, 1991, pp 108-111 60 H Sadel, H Riedel, R Kolbeck, G Muck, W KuDke and M Komger, Capacmve s&on accelerometer wth highly symmetrical design, Sensors and Actuators, A21 -A23 (1990) 312315 61 E Peeters, S Vergote, B Puers and W Sansen, A lughly symmetrical capaabve micro-accelerometer arlth single degree of freedom response, Proc 6fh Int Conf Sohd-State Sensors and Actuators (Transducers ‘91), San Franczrco CA, USA, June 24-28, 1991, pp 97-100 62 N Ura and M Esaslu, Differential capacitwe accelerometer, Tech Dtg iOth Sensor Symp, Japan, 1991, pp 41-44 63 B Puers and S Vergote, A subnurnature capacltlve movement detector using a composite membrane suspension, Sensors and Actuators A, 31 (1992) 90-96 64 D Olney, Acceleration measurement usmg vanable capacitance, Proc Sensors Nuremberg ‘88, Germany, 1988, pp 149160 Surface nucromacluned ac65 R Payne and K Dmswood, celerometer a technology update, SAE Int Automotwe Eng Congr , Detrort, MI, USA, 1991, pp 127-135 66 F Goodenough, Axbags boom when IC accelerometer sees 5Og, Electronrc Destgn, (8 Aug ) (1991) 45-56 67 C Collms, Mmlature passive pressure transensor for lmplantmg m the eye, IEEE Trans Womed Eng , BME-14 (1967) 74-83 68 Y Backlund, L Rosengren, B Hok and B Svedbergh, Passive silicon transensor intended for biomechcal, remote pressure morntormg, Sensors and Actuators, A21LA23 (1990) 58-61
© Copyright 2024