NOODLES NanOdevice mODeling for Low powEr applicationS Coordinateur: IMEP-LAHC Partenaires: IEMN, INAC, IM2NP, LETI, STM Objectives http://noodles.minatec.grenoble-inp.fr/ Self-heating effects in Si nanowire FETs Preliminary results Electron-phonon scattering in single dopant nanowire FETs 10 -5 10-6 10 VD 4 Ballistic all phonons only optical only acoustic = 0.1V 3 -7 A 10 ID(mA) 1. Evaluation of self-heating effects and hot-carrier transport 2. Realistic description of extra-channel parasitic effects (access resistances and capacitances) 3. Assessment of III-V semiconductors as alternative materials to Si 4. Analytical equations for compact modeling 5. Comparison with characterization data  Self-consistent electro-thermal simulation of SiNWs  Self-heating effects are enhanced by surface roughness M. Pala et al., IWCE (2014) ID(A) • To develop predictive multi-scale simulations and efficient semi-analytical models ranging from fullquantum to semi-classical approaches • To identify the optimal choice of device architecture (nanowires, FinFETs, FDSOI), channel material (sSi, SiGe, III-V) and device operating principle (MOSFET, Tun-FET) for the best performance/consumption trade-off • Scientific tasks: 2 -8 C 1 10-9 B 10-10 0 0.1 0.2 0.3 VG(V) 0.4 0.5 0  Acoustic phonons suppress the hysteresis  Optical phonons generate assisted tunneling H. Carrillo-Nunez et al., JAP 116, 164505 (2014) Hole mobility in Ge/Si core/shell nanowires Electron and hole scattering in FDSOIs Si (1 nm) Ge  The shell acts as a barrier for holes and compresses Ge  Strain promotes light holes  Huge enhancement of the mobility induced by the shell J. Li et al., submitted to APL  FDSOI technologies from STMicroelectronics  Simulation of main scattering mechanisms  Calibration with experiments Band structure of III-V thin films V. H. Nguyen et al., IEEE TED 61, 3096 (2014) Next developments •  Calibration of non-parabolic correction of effective mass, based on tight-binding simulations  Next step: fast carrier mobility calculations (Kubo) G. Mugny et al., submitted to ULIS (2015) CONTACT Marco Pala, CR au CNRS [email protected] • • 3D Poisson-NEGF-heat equation package with results of atomistic simulations Analysis of the effect of the shape and doping profile in source and drain Simulation of ring oscillators with the analytical models developed in NOODLES