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Strain relaxation in GaN/AlxGa1-xN superlattices
Optical properties and carrier dynamics of self
ASDAM 2014 Sunday 19 October 2014 Monday 20
International Rectifier Update Annual Meeting of the Stockholders November 4, 2013
III-Nitride growth – how to get device
Nanotechnology for Aerospace Applications Prof. Dr. Ekmel
How to Set up your School Day at BSDE
Novel uncooled detector based on gallium nitride micromechanical
SENSITIVE UNCOOLED IR DETECTORS USING GALLIUM NITRIDE
What is the Problem with GaN-based VCSELs ? Joachim Piprek
10. Nonpolar Cubic III Nitrides: From the Basics of Growth to...
14 IEEE Electron Devices Society 講演プログラム 2014年11月17日（月） 10:10–17:05
Formation of two-dimensional electron gas at AlGaN
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