1. technology and computing

ENGCONF26
Driving Technology Solutions
A Cost Effective Approach for the Development of a Laminate
VCO Platform in both GaAs and SiGe Process Technologies
Ronan Brady, Shane Collins, Eoin Carey, Pierce Nagle, and Robert O’Leary
M/A-COM Technology Solutions, 4 Eastgate Road, Little Island Cork, Ireland
Abstract
Over the last few decades GaAs based technologies have been the most cost effective solution for high power and
high frequency applications in the RF industry. However, recently, GaAs has seen its presence challenged by Si
based solutions, in particular by BiCMOS SiGe which now offers RF functionality at much lower cost. However,
while SiGe based solutions offer lower TMC than those on GaAs, their maskset costs create a large barrier to entry
into this technology. These costs soar when multiple design runs are considered. As a result the time to amortize the
initial engineering and production masksets costs, incurred to develop a product, lengthens significantly.
This paper details a general layout approach that facilitates the fabrication of an entire platform of VCOs via
alterations to a single mask layer only. Therefore, for a given technology, successive production masksets can be
generated by replacing just one mask layer from an existing maskset. Engineering masksets can also be compiled in
a similar fashion. This approach offers considerable time and money savings for both GaAs, and to an even greater
extent, SiGe based approaches and will enhance the feasibility of all future VCO design opportunities
I. INTRODUCTION
Foundry masksets are a significant expense during the development of any semiconductor based IC. This is
especially true for Silicon based technologies. These technologies are typically mature and well established
processes fabricated on larger semiconductor wafers. Hence they can provide both lower unit TMC and increased
capacity for enhanced design complexity. While MPW services can lessen the maskset cost burden from an
engineering design perspective, the production maskset cost can have a significant bearing on whether a design
opportunity even passes the opportunity assessment stage of a product’s development cycle.
The Laminate VCO consists of a varactor tuning flipchip IC and a negative resistance HBT flipchip IC, in
GaAs and/or SiGe technology, mounted on a laminate resonator [1]. To date it has been experimentally shown that
this concept offers a low cost “best in-class” phase noise VCO [2]. It also facilitates a mix & match of technologies,
giving the customer a choice to trade-off between performance and cost. While the laminate approach also offers a
certain degree of frequency customization using off-chip SMT components, this approach does have its limitations.
In general, for a given pair of varactor and HBT flipchips, frequency adjustment is limited to +/-10%. Moreover
other key VCO parameters, including phase noise and bandwidth, cannot be tuned without alterations to the
flipchips. This has critical consequences for the manufacture of their associated production masksets: For any
moderate change in VCO specification an entirely new production maskset would be required. In the context of
replacing the existing platform of full MMIC VCOs with laminate VCOs using GaAs, it is estimated that a total of 16
masksets would be required at a total cost of $400k. This cost would rise to almost $2m for an exclusively SiGe
based approach.
This paper details a layout approach that facilitates the fabrication of an entire platform of VCOs via
alterations to a single metal mask layer only. Therefore, for a given technology, successive production masksets can
be generated by replacing just one mask layer from an existing maskset. Engineering masksets can also be compiled
in a similar fashion. This approach offers considerable time and money savings for both GaAs and, to an even
greater extent, SiGe based approaches and will enhance the feasibility of all future VCO design opportunities.
COMPANY CONFIDENTIAL
1
ENGCONF26
Driving Technology Solutions
II. VCO OPERATION
There is a wide range of literature and academic textbooks [3] dedicated to both the theoretical and practical
aspects of VCO design. The majority of this material is beyond the scope of this paper. However a brief synopsis of
the VCO operation, specific to the architecture adopted by M/A-COM Tech, is essential before discussing the Metal
Mask Approach.
Fig. 1: M/A-COM Tech’s balanced VCO topology indicating the 2Fo tap-off point at the F0 virtual ground.
Under normal large-signal operating conditions the two identical Clapp Oscillators shown in Fig. 1 operate 180°
out of phase at the fundamental frequency (F0). This push-pull mode of operation at F0 leads to a virtual ground at
the centre of the resonator transmission path (2L) connecting the base terminals of the back-to-back HBTs. At the
same time nonlinear harmonics of the fundamental will also exist at this point, the most dominant of these being the
second harmonic (2F0). As a consequence of the balanced topology the virtual node is also mirrored at the centre
point between the pair of emitter capacitors C2. This node provides both a convenient tap-off point for 2F0 and good
rejection of the fundamental, F0 [3]. This fundamental can be extracted (via a buffer) from a non-virtual ground node
along the resonator or, alternatively, it may be coupled-off using an adjacent transmission line alongside the 2L
resonator track.
The VCO frequency is determined by the resonance frequency of the oscillator’s resonant loop which is essentially
a series LC circuit of transmission line resonator inductances “2L” and capacitors C1\C2\C3. The capacitance C3
typically comprises of both constant and variable capacitors which are configured to obtain the desired oscillation
frequency and bandwidth, while the gain of the negative resistance circuits are controlled specifically by C1 and C2.
III. SIGE/GAAS LAMINATE VCO
The Laminate VCO concept, first proposed in [4], is a low cost solution for the Point-to-Point market. It involves
fabricating only the components that are most critical to VCO performance on semiconductor flipchip technology,
and realising the remaining components using a combination of SMTs and/or metal interconnect on an underlying
COMPANY CONFIDENTIAL
2
ENGCONF26
Driving Technology Solutions
multi-layer laminate. The assembly diagram of a typical Laminate VCO is illustrated in Fig. 2. It includes a varactor
flipchip containing all the required variable capacitor diodes for the VCO, a HBT flipchip containing the negative
resistance core, high Q inductive resonator tracks on top metal laminate and finally a number of 0201 SMTs to
complete the required VCO circuitry. The idea here was that with reduced semiconductor area and higher Q
resonator tracks on laminate this design concept has the potential to improve both VCO phase noise performance and
reduce the VCO’s TMC. The results from the first prototype of this design, namely a GaAs/GaAs Laminate
constituting a GaAs Varactor and GaAs HBT Core, were presented in [2]. It exhibited “best-in-class” phase noise
performance beating all purely MMIC based approaches on the same GaAs technology. More recent results from a
SiGe/GaAs, constituting a SiGe core and GaAs Varactor, has demonstrated comparable phase noise performance to
the GaAs/GaAs Laminate VCO but with further TMC reductions. As a result the SiGe/GaAs Laminate VCO was the
chosen technology for the product development of this component.
RF/2 Port
Varactor
Die
VCO Core
Die
Vtune
Port
Inductive Transmission
Lines
RF Port
Fig. 2: MACOM’s Laminate VCO Concept
IV. METAL MASK APPROACH GAAS
Compiling today’s customer requirements with MACOM’s existing family of MMICs VCO, the specifications
cover frequency ranges from 5-15GHz and bandwidths from 500-1400MHz. As argued earlier, the engineering and
production maskset costs for the development of an entire new platform of Laminate VCOs would be substantial. In
fact, despite the laminate VCO’s enhanced flexibility which allows moderate frequency adjustments via laminate
and/or SMT alterations, the entire platform would still require several unique masksets on both GaAs (+$25K/ea)
and SiGe(+$120K/ea) technology to meet all the platform specifications. This presented a huge barrier and an
improved approach was sought in terms of metal mask adjustability. The key idea was to layout both flipchips in
such a way that they could each be reconfigured to operate to any VCO specification by changes to one mask layer
only in their maskset. Successive engineering/production masksets can then be derived by replacing just this one
mask layer in this maskset thereby providing considerable savings during any future VCOs product development.
To realize this approach, the key VCO components that were critical to VCO performance, had to be determined.
Then the required range and resolution of these components values had to be established from simulation and/or
review of historical data. Finally the process technologies layer stack was carefully studied to determine the most
appropriate layer to which Metal Mask Adjustability would be applied. The following two subsections discuss how
the metal mask approach has been applied to the GaAs Varactor flipchip on GCS D1 and to the SiGe HBT core on
IBM’s 5PAE processes.
COMPANY CONFIDENTIAL
3
ENGCONF26
Driving Technology Solutions
A. Metal Mask Approach on GaAs
The typical layout for the varactor flipchip die on GCS’s 2µm D1 includes 3 pairs of back-2-back varactor diodes
and a MIM capacitor (termed virtual node capacitor) tied to ground via adjacent Cu pillar bumps. As discussed
earlier both are critical elements of the VCO’s operation as they constitute capacitors C3 and CNODE respectively in
earlier simplified circuit diagram of Fig. 1. The varactors are used to set the frequency/bandwidth characteristics of
the VCO, while the MIM node capacitor which creates optimum impedance at 2fo at the virtual node to enhance the
overall balanced operation of the VCO circuit.
(a)
(b)
(c)
Fig. 3: ADS Momentum 3D & Layout plots of GaAs components employing metal mask approach: (a) A 5pF MiM Capacitor on
GaAs, (b) A 5pF sized capacitor with 40% M2 (Blue) overlap reduction on M1(Green)=> 3pF. (c) An 18 finger varactor with 10
anode/cathode fingers disconnected/isolated => 8 finger varactor.
The chosen adjustable layer on the GCS process was top metal M2. It acts as both the interconnection layer between
circuit components and as the top electrode of the MiM capacitors. In the case of the virtual node MiM cap the
footprint of the largest required capacitance value was first laid out. Variability in this capacitance was then achieved
by peeling back the M2 overlap on the underlying M1 as illustrated in Fig. 3a and Fig. 3b. In terms of the varactors,
just like the MiM capacitor, the largest required periphery was also laid out first i.e. 18 fingers of 150um x 10um
(27000um2). The varactor periphery can then be adjusted by connecting in/out cathode/anode finger pairs to the
common M2 flange at either end of the component as shown in Fig. 3c. This gives the design engineer a generous
adjustment resolution of 1 finger or 1500um2 varactor periphery.
The remaining components on the GaAs varactor flipchip include RF choke inductors and ESD structures. These
are considered to be not critical to VCO operation and, hence, are left fixed.
B. Metal Mask Approach on IBM’s SiGe
The metal mask adjustable layout for the SiGe process contains a number of key VCO circuit components. These
include the HBT biasing resistors which allow the design engineer to trade off VCO phase noise performance with
power consumption as per Lesson’s equation [3]. They also include the capacitors C1, C2 & C3 as illustrated earlier
in Fig.1. In the case of the input capacitor C3 the maximum required capacitance was determined to be 10.8pF from
simulation. Just as in the case of the GaAs process, adjustments to a single metal layer can provide any value of
capacitance up to 10.8pF. Capacitors C1 and C2 have been implemented in a similar fashion. A similar approach has
been adopted for the resistors. In the case of the emitter resistor, the design engineer can select resistance values
ranging from 4Ω to 36Ω with a 1Ω resolution. The pair of base bias resistors have also been implemented in a
similar fashion providing adjustable resistances ranging from 30-300Ω with a 5Ohm resolution.
V. CONCLUSION
This paper has shown how all key VCO characteristics including frequency, bandwidth, phase noise, power and
current consumption can be varied with just a single mask layer change. It highlighted that despite imposing certain
layouts constraints on the GaAs/SiGe flipchip the design engineer still has the complete design flexibility to fabricate
any circuit component values required to design/target an entire platform of laminate VCOs. The expected release
COMPANY CONFIDENTIAL
4
ENGCONF26
Driving Technology Solutions
dates for both SiGe and GaAs masksets that implement the proposed metal mask adjustability approach is
September.
ACKNOWLEDGEMENT
The authors wish to acknowledge the assistance and support of the M/A-COM Engineering Conference
Committee.
REFERENCES
[1] Shane Collins, Ronan Brady, Eoin Carey, and Pierce Nagle, "GaAs and SiGe Options Point-2-Point Laminate VCOs," 2013
Engineering Conference.
[2] Shane Collins, Ronan Brady, Eoin Carey, and Pierce Nagle, "Laminate VCOs for Point-2-Point Applications," 2012
Engineering Conference.
[3] A. Grebennikov, “RF and Microwave Transistor Oscillator Design” John Wiley & Sons, 2007.
[4] Ronan Brady, Shane Collins, Eoin Carey, and Pierce Nagle, "High Frequency Laminate VCOs: A Feasibility Study," 2011
Engineering Conference.
[5] R. E. Collin, Foundations for Microwave Engineering, New York: McGraw-Hill, 1966.
COMPANY CONFIDENTIAL
5