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Technology Roadmap for
NAND Flash Memory
April 2014
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Introduction
NAND Flash is a rapidly changing technology and market. It promises to be very
interesting as the process node approaches 10 nm. At this point, physical
constraints will begin to limit the performance of the basic memory cell design. As
a result, looking more than two years into the future becomes a purely speculative
exercise and we limit our projections to 2016.
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NAND Flash Memory Roadmap 2014
ITRS Technology Roadmap
Source: ITRS
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NAND Flash Memory Roadmap 2014
NAND Annual Technology Roadmaps
Manufacturer
2014
2015
2016
ITRS Flash Roadmap
17 nm
15 nm
14 nm
1X (19 nm)
1Y (16 nm) planar
3D-NAND (24L)
1Z (12 nm) planar
3D-NAND (32L)
1x nm 16 nm
planar
3D-NAND
3D-NAND Gen 2
(1Y?) 15 nm
planar
1Z 15 nm
1Z
3D-NAND (BiCS)
3D-NAND (BiCS)
16 nm planar
3D-NAND?
3D-NAND
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NAND Flash Memory Roadmap 2014
NAND Technology Quarterly Forecast
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NAND Flash Memory Roadmap 2014
2013 NAND Production
Source: http://en.chinaflashmarket.com/Uploads/file/2013%20NAND%20Flash%20market%20annual%20report.pdf
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NAND Flash Memory Roadmap 2014
Micron Memory Roadmap
Source: http://www.enterprisetech.com/2014/02/20/micron-pushes-memory-roadmap-several-routes/
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NAND Flash Memory Roadmap 2014
Micron 16 nm MLC NAND
Our 16 nm NAND technology enables the industry’s
smallest 128Gb MLC Flash memory device. The 16
nm node is not only the leading Flash process, but
it is also the most advanced processing node for
any sampling semiconductor device.
Micron plans to make the transition from 2D NAND
flash to 3D NAND flash when it's more cost
effective. Because Micron already has a good
scaling path for 2D NAND flash, it needs to add a
lot of layers to 3D NAND flash before it makes
economic sense to change over, so it is pursuing
both formats in parallel.
Source: http://www.micron.com/about/innovations/process-tech
Source: http://www.theinquirer.net/inquirer/feature/2286446/micronbets-on-3d-nand-flash-for-the-future-of-storage
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NAND Flash Memory Roadmap 2014
Micron 3D NAND Cell
Micron customers won't have to wait
long for 3D flash memory CEO Mark
Durcan tells CNET that the company will
start providing samples of the advanced
memory technology to customers in the
first quarter of 2014.
Source: http://www.cnet.com/news/micron-customers-wont-have-to-wait-long-for-3d-flash-memory/
Source: Akira Goda “Opportunities and Challenges of 3D NAND Scaling”
International Symposium VLSI Technology, Systems, and Applications (VLSI-TSA), 2013
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NAND Flash Memory Roadmap 2014
Samsung NAND Flash Roadmap
Source: http://www.anandtech.com/show/7237/samsungs-vnand-hitting-the-reset-button-on-nand-scaling
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NAND Flash Memory Roadmap 2014
Samsung 3D V-NAND
Samsung's three-dimensional V-NAND (Vertical NAND) flash memory
is fabricated using an innovative vertical interconnect process
technology to link the 24-layer 3D cell array based on Samsung's 3D
Charge Trap Flash (CTF) structure.
In Samsung's CTF-based NAND flash architecture, first developed in
2006, an electric charge is temporarily placed in a holding chamber of
a non-conductive layer of flash composed of silicon nitride (SiN),
instead of using a floating gate, to mitigate interference between
neighbouring cells. By making this CTF layer three-dimensional, the
reliability and processing speed of our V-NAND has been significantly
improved. Furthermore, by applying both of these technologies,
Samsung's 3D V-NAND is able to provide over twice the scaling of 20
nm-class planar NAND flash.
Source: http://www.samsung.com/global/business/semiconductor/html/product/flash-solution/vnand/overview.html
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NAND Flash Memory Roadmap 2014
Samsung 3D V-NAND
Source: http://www.anandtech.com/show/7237/samsungs-vnand-hitting-the-reset-button-on-nand-scaling
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NAND Flash Memory Roadmap 2014
Samsung 3D V-NAND
Source: Ki-Tae Park et al. “Three-Dimensional 128Gb MLC Veritical NAND Flash-Memory with 24-WL Stacked Layers and
50MB/s High-Speed Programming
Solid-State Circuits Conference Digest of Technical Papers (ISSCC) 2014 pp334-335
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NAND Flash Memory Roadmap 2014
Sandisk NAND Memory Roadmap
Source: http://www.flashmemorysummit.com/English/Collaterals/Proceedings/2013/20130813_Plenary_Shrivastava.pdf
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Sandisk 2D NAND Memory
”One of our goals is to extend the life of 2D NAND technologies as
far as possible because it reflects the huge investment that we
have made in fabs and the technology, over the number of years,”
said Shrivastava. “Of course, 3D NAND is extremely important and
when it becomes cost-effective then it will move into production.”
Sandisk plans to start producing its 3D NAND chips in 2016.
“We are travelling in what we think is the lowest cost path in every
technology generation, going from 19 nm to 1Y where we at the
limit with lithography, and then we will scale to 1Z, which is our
next-generation 2D NAND technology. We believe that this scaling
path gives us the lowest cost structure in each of the nodes and in
terms of cumulative investment.”
Source: http://www.flashmemorysummit.com/English/Collaterals/Proceedings/2013/20130813_Plenary_Shrivastava.pdf
Ritu Shrivastava, Vice President Technology Development, at Sandisk Corporation
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NAND Flash Memory Roadmap 2014
Sandisk BiCS 3D-NAND
Source: http://www.flashmemorysummit.com/English/Collaterals/Proceedings/2013/20130813_Plenary_Shrivastava.pdf
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NAND Flash Memory Roadmap 2014
SK-Hynix NAND Roadmap
Source: 2013SK_hynix_en_1.pdf
www.skhynix.com/en/sustainable/sustain/report.jsp
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NAND Flash Memory Roadmap 2014
SK-Hynix 2D NAND Memory
SK Hynix Inc. announced that it has started full-scale mass
production of 16 nm 64 Gb (Gigabit) MLC (Multi Level Cell)
NAND Flash, which uses the industry's thinnest process
technology. (Nov.20 20013)
We expect Hynix will develop 3D vertical fabrication
technology by year-end or early next year and determine
commercial production timing later. Given very low presence
in the SSD market, unlike other NAND makers, Hynix’s
priority in R&D and product development will be on
enhancing competitive in house controller capability to set up
a more sustainable product portfolio, according to the
company.
Source: http://www.techpowerup.com/194824/sk-hynix-started-full-scale-mass-production-of-16-nm-nand-flash.htm
Source: Global Memory Sector Citi Research Equities 26 Sept 2013
http://pg.jrj.com.cn/acc/Res/CN_RES/INDUS/2013/9/27/2b21dda8-af3a-4861-8b9e-69ad4e9efd5e.pdfl
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NAND Flash Memory Roadmap 2014
SK-Hynix MLC NAND Product Offerings
Source: SK-Hynix
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NAND Flash Memory Roadmap 2014
SK-Hynix 3D V-NAND
Source: http://thememoryguy.com/3d-nand-who-will-make-it-and-when/
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NAND Flash Memory Roadmap 2014
Glossary
•
•
•
•
•
•
•
BiCS- pipe-shaped Bit Cost Scalable flash. A 3D NAND cell being developed by
Toshiba.
eMMC- Embedded Multimedia Card. A 1997 standard combining NAND Flash
and Controller.
HKMG- High K Metal Gate. An advance technology designed to replace silicon
dioxide at small process nodes.
ITRS- International Technology Roadmap for Semiconductors.
MLC- Multilevel Cell. A NAND memory cell that stores more than one bit of
information.
TCAT- Terabit Array Transistor. A 3D NAND cell architecture.
TLC- Triple Level Cell. A NAND memory cell that stores three bits of
information.
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