1. No category

CNY74–2H/ CNY74–4H
Vishay Telefunken
Multichannel Optocoupler with Phototransistor Output
Description
The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in an 8-lead, resp. 16-lead
plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
circuits,
14926
non-interacting
Features
Emitter Coll.
D CNY74-2H includes 2 isolater channels
D CNY74-4H includes 4 isolater channels
D Isolation test voltage VIO = 5 kV
D Test class 25/100/21 DIN 40 045
D Low coupling capacitance of typical 0.3 pF
D Current Transfer Ratio (CTR) of typical 100%
D Low temperature coefficient of CTR
D Wide ambient temperature range
D Underwriters Laboratory (UL) 1577 recognized,
Coll. Emitter
14711
Galvanically separated
switches
Anode Cath. Cath. Anode
8 PIN
16 PIN
file number E-76222
D CSA (C–UL) 1577 recognized, file number
E-76222 – Double Protection
D Coupling System U
C
Order Instruction
Ordering Code
CNY74–2H
CNY74–4H
Rev. A2, 19–Jul–99
CTR Ranking
50 to 600%
50 to 600%
Remarks
8 Pin = Dual channel
16 Pin = Quad channel
1 (9)
CNY74–2H/ CNY74–4H
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
tp ≤ 10ms
Tamb ≤ 25°C
Symbol
VR
IF
IFSM
PV
Tj
Value
6
60
1.5
100
125
Unit
V
mA
A
mW
°C
Symbol
VCEO
VECO
IC
ICM
PV
Tj
Value
70
7
50
100
150
125
Unit
V
V
mA
mA
mW
°C
Symbol
VIO 1)
Ptot
Tamb
Tstg
Tsd
Value
5
250
–40 to +100
–55 to +125
260
Unit
kV
mW
°C
°C
°C
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Peak collector current
Power dissipation
Junction temperature
Test Conditions
tp/T = 0.5, tp ≤ 10 ms
Tamb ≤ 25°C
Coupler
Parameter
Test Conditions
AC isolation test voltage (RMS) t = 1 min
Total power dissipation
Tamb ≤ 25°C
Ambient temperature range
Storage temperature range
Soldering temperature
2 mm from case, t ≤ 10 s
1) Related to standard climate 23/50 DIN 50014
2 (9)
Rev. A2, 19–Jul–99
CNY74–2H/ CNY74–4H
Vishay Telefunken
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Test Conditions
IF = 50 mA
Symbol
VF
Min.
Typ.
1.25
Max.
1.6
Unit
V
Test Conditions
IC = 1 mA
IE = 100 mA
VCE = 20 V, IF = 0, E = 0
Symbol
VCEO
VECO
ICEO
Min.
70
7
Typ.
Max.
Unit
V
V
nA
Test Conditions
t=2s
VIO = 1000 V,
40% relative humidity
IF = 10 mA, IC = 1 mA
Symbol
VIO1)
RIO1)
Min.
5
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector dark current
100
Coupler
Parameter
DC isolation test voltage
Isolation resistance
Collector emitter
saturation voltage
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 W
Coupling capacitance
f = 1 MHz
1) Related to standard climate 23/50 DIN 50014
Typ.
Max.
W
1012
VCEsat
Unit
kV
0.3
V
fc
100
kHz
Ck
0.3
pF
Current Transfer Ratio (CTR)
Parameter
IC/IF
Test Conditions
VCE = 5 V, IF = 5 mA
VCE = 5 V, IF = 10 mA
Rev. A2, 19–Jul–99
Type
Symbol
CTR
CTR
Min.
0.5
0.6
Typ.
1.0
1.2
Max.
6.0
Unit
3 (9)
CNY74–2H/ CNY74–4H
Vishay Telefunken
Switching Characteristics
Parameter
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
IF
0
Test Conditions
VS = 5 V, IC = 2 mA, RL = 100 W ((see figure
g
1))
Symbol
td
tr
tf
ts
ton
toff
ton
toff
VS = 5 V, IF = 10 mA, RL = 1 kW ((see figure
g
2))
Typ.
3.0
3.0
4.7
0.3
6.0
5.0
9.0
18.0
Unit
ms
ms
ms
ms
ms
ms
ms
ms
+5V
IF
IC = 2 mA ; Adjusted through
input amplitude
RG = 50 W
tp
= 0.01
T
tp = 50 ms
96 11698
IF
0
Channel I
50
W
100
Channel II
W
t
tp
Oscilloscope
RL = 1 M W
CL = 20 pF
95 10804
IC
100%
90%
Figure 1. Test circuit, non-saturated operation
10%
0
IF
0
IF = 10 mA
td
IC
RG = 50 W
tp
0.01
T
+
ts
ton
tp = 50 ms
Channel I
50 W
Channel II
1 kW
t
tr
+5V
Oscilloscope
RL ≥ 1 MW
CL ≤ 20 pF
tp
td
tr
ton (= td + tr)
tf
toff
pulse duration
delay time
rise time
turn-on time
ts
tf
toff (= ts + tf)
storage time
fall time
turn-off time
Figure 3. Switching times
95 10843
Figure 2. Test circuit, saturated operation
4 (9)
Rev. A2, 19–Jul–99
CNY74–2H/ CNY74–4H
Vishay Telefunken
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
10000
Coupled device
ICEO– Collector Dark Current,
with open Base ( nA )
P tot – Total Power Dissipation ( mW )
300
250
200
Phototransistor
150
IR-diode
100
50
VCE=20V
IF=0
1000
100
10
0
1
0
40
80
120
Tamb – Ambient Temperature ( °C )
96 11700
0
100
IC – Collector Current ( mA )
I F – Forward Current ( mA )
100.0
10.0
1.0
0.1
VCE=5V
10
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )
96 11862
0.1
100
10
Figure 8. Collector Current vs. Forward Current
2.0
100
20mA
IC – Collector Current ( mA )
VCE=5V
IF=5mA
1.5
1.0
0.5
0
–25
1
IF – Forward Current ( mA )
95 11027
Figure 5. Forward Current vs. Forward Voltage
CTR rel – Relative Current Transfer Ratio
100
75
Figure 7. Collector Dark Current vs.
Ambient Temperature
1000.0
95 11025
50
Tamb – Ambient Temperature ( °C )
95 11026
Figure 4. Total Power Dissipation vs.
Ambient Temperature
25
IF=50mA
10mA
10
5mA
2mA
1
1mA
0.1
0
25
50
75
Tamb – Ambient Temperature ( °C )
Figure 6. Relative Current Transfer Ratio vs.
Ambient Temperature
Rev. A2, 19–Jul–99
0.1
95 10985
1
10
100
VCE – Collector Emitter Voltage ( V )
Figure 9. Collector Current vs. Collector Emitter Voltage
5 (9)
CNY74–2H/ CNY74–4H
1.0
t on / t off – Turn on / Turn off Time ( m s )
VCEsat – Collector Emitter Saturation Voltage ( V )
Vishay Telefunken
20%
0.8
CTR=50%
0.6
0.4
0.2
10%
0
1
toff
20
10
ton
0
5
100
10
15
20
Figure 12. Turn on / off Time vs. Forward Current
t on / t off – Turn on / Turn off Time ( m s )
VCE=5V
10
IF – Forward Current ( mA )
95 11031
1000
CTR – Current Transfer Ratio ( % )
30
100
10
IC – Collector Current ( mA )
Figure 10. Collector Emitter Saturation Voltage vs.
Collector Current
1
10
8
Non Saturated
Operation
VS=5V
RL=100W
ton
6
toff
4
2
0
0.1
1
10
100
IF – Forward Current ( mA )
Figure 11. Current Transfer Ratio vs. Forward Current
6 (9)
Saturated Operation
VS=5V
RL=1kW
40
0
95 11028
95 11029
50
0
95 11030
2
4
6
10
IC – Collector Current ( mA )
Figure 13. Turn on / off Time vs. Collector Current
Rev. A2, 19–Jul–99
CNY74–2H/ CNY74–4H
Vishay Telefunken
Type
XXXXXXXX
Date
Code
(YM)
820 U TFK 63
15091
Pin 1
Indication
Coupling
System
Indicator
Company
Logo
Production
Location
Figure 14. Marking example
Dimensions of CNY74–2 in mm
y
y
weight:
ca. 0.55 g
creepage distance: 6 mm
air path:
6 mm
after mounting on PC board
14784
14784
Rev. A2, 19–Jul–99
7 (9)
CNY74–2H/ CNY74–4H
Vishay Telefunken
Dimensions of CNY74–4 in mm
y
y
weight:
ca. 1.0 g
creepage distance: 6 mm
air path:
6 mm
after mounting on PC board
14783
8 (9)
Rev. A2, 19–Jul–99
CNY74–2H/ CNY74–4H
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Rev. A2, 19–Jul–99
9 (9)