The 7th Asia-Pacific Workshop on Widegap Semiconductors APWS 2015 May 17 ~ 20, 2015 / The K Seoul Hotel, Seoul, Korea Room B (Crystal Ballroom B) Session Title: [WEB1] 06. Nanostructures I Date: May 20, 2015 (Wednesday) Time: 09:00 ~ 10:25 Session Chair: Yong-Hoon Cho (KAIST, Korea) Duanjun Cai (Xiamen Univ., China) [WEB1-1] 09:00 ~ 09:25 [Invited] Nanoscale characterization of structural and optical properties of nitride nanostructures using scanning transmission electron microscopy cathodoluminescence Jürgen Christen, Frank Bertram, Marcus Müller, and Peter Veit (Otto-vonGuericke-Univ. Magdeburg, Germany) [WEB1-2] 09:25 ~ 09:40 Column diameter dependence of emission mechanisms in InGaN/GaN single quantum wells nanocolumns Rin Miyagawa, Takao Oto, Yutaro Mizuno, Tatsuya Kano, Jun Yoshida, and Katsumi Kishino (Sophia Univ., Japan) [WEB1-3] 09:40 ~ 09:55 Nanoheteroepitaxy of GaN on AlN/Si(111) nanorods fabricated by nanosphere lithography Donghyun Lee, In-Su Shin, Jin Lu (Seoul Nat'l Univ., Korea), Donghyun Kim (Korea Advanced Nano-Fab Center, Korea), Yongjo Park, and Euijoon Yoon (Seoul Nat'l Univ., Korea) [WEB1-4] 09:55 ~ 10:10 Fabrication of ultraviolet emission device using GaN nano-needle field emitters Jong-Hoi Cho, Je-Hyung Kim (KAIST, Korea), Ju-Hyung Ha (Dong-Eui Univ., Korea), Jun-Mok Ha, Sung-Oh Cho (KAIST, Korea), Won-Jae Lee (Dong-Eui Univ., Korea), and Yong-Hoon Cho (KAIST, Korea) [WEB1-5] 10:10 ~ 10:25 Intrinsic electronic properties of non-polar GaN and InN surfaces Holger Eisele (Technische Universität Berlin, Germany), Michael Schnedler (Forschungszentrum Jülich GmbH, Germany), Andrea Lenz (Technische Universität Berlin, Germany), Verena Portz (Forschungszentrum Jülich GmbH, Germany), Liverios Lymperakis, Jörg Neugebauer (Max-Planck-Institut für Eisenforschung GmbH, Germany), and Philipp Ebert (Forschungszentrum Jülich GmbH, Germany)