Nanostructured Nitride Semiconductors and Their Applications P.C. Ku (古培正) Department of Electrical Engineering & Computer Science, University of Michigan Abstract: In this study, we focus on potential applications of gallium nitride semiconductor nanostructures for future display, wearable technology, photovoltaics, biosensors, and quantum cryptography. The key is the ability to control the strain in these nanostructures. Strain can alter both electronic and optical properties of semiconductors. Properly controlled, strain can greatly improve device performance. Poorly controlled, strain increases defect density and leads to unwanted properties such as efficiency droop in LEDs, difficulties in achieving green emitters, and abnormally large linewidth from quantum dot emission. In this work, we study the impact of strain in nitride semiconductor nanostructures on their optical properties. We have shown the exploitation of strain can lead to monolithic integration of RGB emitters and a lower defect density in nonpolar GaN films. High indium content InGaN nanostructures have also been demonstrated for photovoltaic applications. Bio: P.C. Ku is the associate professor of electrical engineering and computer science at the University of Michigan. He received all his degrees in electrical engineering including a BS from the National Taiwan University and a PhD from the University of California at Berkeley. Dr. Ku has a long career in the field of optoelectronics, starting in 1995 when he joined the lab of Professor Ching-Fuh Lin of the National Taiwan University as a research assistant. After two years of military service as a Navy ensign, he became a full-time student again in 1998 under the guidance of Professor Connie Chang-Hasnain at the University of California Berkeley. His doctoral dissertation is on semiconductor slow light devices. He was among the first to show that the speed of light can be significantly reduced in a specially designed semiconductor structure. As a result of his PhD research, he was awarded the Ross Tucker Memorial Award in 2004. During his PhD study, Dr. Ku was the recipient of the Berkeley Fellowship. After receiving his PhD, Dr. Ku spent two years both as a postdoctoral researcher for the DARPA Center for Optoelectronic Nanostructured Semiconductor Technology and as a senior engineer for Intel. His research shifted from telecommunication devices to optical lithography and phasechange memory. It was during this time Dr. Ku conceived the idea that advanced lithography technology can be revolutionary to optoelectronic devices. In 2006, he returned to academia as an assistant professor of electrical engineering and computer science at the University of Michigan. His research has since been focused on creating impacts for optoelectronic devices in the emerging areas of energy, quantum, and biomedical science. He has worked on a variety of projects funded by NSF, DARPA, and DOE including LEDs, solar cells, nanoscale lasers, biosensors, and single photon sources. He received the DARPA Young Faculty Award in 2010.