2nd IEEE International Conference on Emerging Electronics
J N Tata Auditorium, Indian Institute of Science, Bangalore,
December 3-6, 2014.
http://www.cense.iisc.ernet.in/icee
Technical Co-sponsor: IEEE Electron Devices Society
General Chairs
Rudra Pratap (IISc)
Anil Kottantharayil (IIT-B)
Steering Committee
Chairs
Renuka Jindal
(University of Louisiana,
Lafayette)
M K Radhakrishnan, 1.
NanoRel
2.
Technical Committee
Chairs
K. N. Bhat (IISc)
Saurabh Lodha (IIT-B)
Organizing Committee
Chairs
S A Shivashankar (IISc)
Sanjeev Srivastava (IISc)
Publicity/Industry Liaison
Chairs
S. Mohan (IISc)
Navakanta Bhat (IISc)
Tutorial Chairs
Srinivasan Raghavan (IISc)
Swaroop Ganguly (IIT-B)
Advisory Committee
S Mohan (IISc)
J Vasi (IIT-B)
IEEE Liaison
M K.Radhakrishnan,
Nanorel
ICEE Secretariat, SF-34,
Centre for Nano Science
and Engineering (CeNSE),
Indian Institute of Science
(IISc), Bangalore - 560012.
Karnataka, INDIA.
Ph: +91.80.23600209
Fax: +91.80.23604656
Certificate of Awards
This is to certify that the following awards have been given to the participants:
Best Oral Talks:
STC-2. Alison E. Viegas, Debaditya Chatterjee, Tanushree H. Choudhury, Srinivasan Raghavan, Navakanta Bhat,
IISc, Bangalore
Thin Film Anodized Titania Nanotubes-based Oxygen Sensor (1570024971)
SPC-3: Rammohan Sriramdas, Shreevar Rastogi, Rudra Pratap, IISc, Bangalore
Power requirements of Sensing Nodes and Adequacy of Energy Harvesting (1570026731)
CSC-4: Priti Gupta, A. Azizur Rahman, Shruti Subramanian, Shalini Gupta, Nirupam Hatui, B.A. Chalke, R.D. Bapat,
A. Thamizhavel, Arnab Bhattacharya, Dept. of Condensed Matter Physics and Materials Science, Tata Institute of
Fundamental Research, Mumbai, India
Transition-metal dichalcogenides: novel substrates for epitaxial growth of III-nitride semiconductors
(1570026079)
CSC-5:Manikant, Nagaboopathy Mohan, Rohith Soman, Hareesh Chandrasaker and Srinivasan Raghavan, Indian
Innstitute of Science, Bengaluru, India
AlGaN/GaN HEMTs 2DEG behavior on various transition buffers (1570029433)
Best Poster Presentations:
NEP-1: Nagaraj K S, Karthick J, Anitha S, Suma B N, G M Hegde, Indian Institute of Science, Bengaluru, India, and
Sneh Vaswani, Sindhulakshmi Kurup, Siemens Technology and Services Pvt. Ltd, Bengaluru, India
Fabrication of micro-nano fluidic channels with integrated electrodes (1570021061)
NEP-2. Sonali Biswas and Anup Kumar Gogoi, Indian Institute of Technology, Guwahati, India
Design issues of Piezoresistive MEMS accelerometer for an application specific medical diagnostic system
(1570026701)
CSP-6. Ankush Bag, Palash Das, Saptarsi Ghosh, Partha Mukhopadhyay, Syed M. Dinara, Rahul Kumar, Apurba
Chakraborty, Dhrubes Biswas, Indian Institute of Technology, Kharagpur, India
Fowler Nordheim Tunneling Contribution in AlGaN/GaN on Si (111) Schottky Barrier Current (1570021679)
PEP-6. Sandra Dias and S. B. Krupanidhi, Indian Institute of Science, Bengaluru, India
Study of Cu2SnS3 thin films for photoactive applications (1570021333)
CMP-7. Avirup Dasgupta, Chandan Yadav, Priyank Rastogi, Amit Agarwal, and Yogesh Singh Chauhan, Indian
Institute of Technology, Kanpur, India
Analysis and Modeling of Quantum Capacitance in III-V Transistors (1570021579)
PEP-8. Anishkumar Soman, Aldrin Antony, Indian Institute of Technology Bombay, Mumbai, India
One Dimensional Photonic Crystal Reflector using Silicon-rich Silicon Nitride and Silicon Oxynitride Multilayers for
Solar Cells (1570021469)
STP-12. Abinash Tripathy, Ankur Goswami and Prosenjit Sen, Indian Institute of Science, Bengaluru, India
Single Step Fabrication of Nano-Structured Superhydrophobic Surfaces Showing Angle Dependent Colors
(1570026595)
(Dr. Sanjeev Srivastava)
Organizing Chair