POET Technologies Enabling the Future

POET Technologies
Enabling the Future
Corporate Presentation
February 2015
Safe Harbor
The following presentation, other than statements of historical fact, may include certain “forward-looking
statements” within the meaning of the United States Private Litigation Reform Act of 1995 and applicable Canadian
securities laws. These forward looking statements are made under the “Safe Harbor” provisions of the aforesaid
act and laws. All statements regarding future plans and objectives are forward-looking statements. Words such as
“expect”, “anticipate”, “estimate”, “future plans”, “may”, “will”, ”should”, “intend”, “believe”, “opportunities”, and
other similar expressions are forward-looking statements. Forward-looking statements are subject to risks,
uncertainties, assumptions and are not guarantees of future results, but rather reflect current views with respect
to future events. Important factors that could cause actual results to differ materially from those expressed or implied in the
forward looking statements include risks and factors disclosed under the heading “Risk Factors” in the public
documents filed from time to time with the System for Electronic Document Analysis and Retrieval (“SEDAR”). Readers should not place undue reliance on any forward-looking statements. We disclaim any obligation to update
or revise any forward looking statements, except as required by law to reflect any change in expectations, events,
conditions or circumstances on which any of the forward looking statements are based, or that may affect the
likelihood that actual results will differ from those set forth in the forward-looking statements. © 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Corporate Introduction
POET Technologies has created a revolutionary
semiconductor technology ultimately replacing current siliconbased IC devices while delivering up to 90% power savings
and dramatic performance gains in like applications.
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Company Overview
Who Is POET?
§ 
POET Technologies, Inc., is a
semiconductor technology
development company
§ 
Full and/or Exclusive IP Ownership
‒  Has been granted 34 patents
with 7 additional patents pending
‒  Continues to drive IP pipeline
§ 
Currently listed on the TSX Venture
Exchange and OTC QX (US)
§ 
Fully SEC compliant (20-F)
§ 
Lab facilities at Storrs Connecticut.
HQ in Toronto, Canada
Background & Objectives
§ 
POET provides revolutionary and
disruptive III-V semiconductor
process and device intellectual
property (IP)
§ 
Vs. existing technologies, POET
enables:
þ  Increased performance
þ  Lower power consumption
þ  Novel devices with wider range of
functionality in integrated
solutions
þ  Lower system cost through
device consolidation and power
reduction
POET will license process IP and generate revenue from fabs and customers
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Management Team
Peter Copetti
Exec. Co-Chairman &
Interim CEO
Ajit Manocha
Exec. Co-Chairman
Dr. Geoffrey Taylor
Chief Scientist
§  Chief architect and strategist of POET transformation
§  Leading POET’s resurgence and monetization activities
§  Capital markets expertise
§  35 years of semiconductor industry experience with deep
knowledge of the technology and operations
§  Most recently CEO of GlobalFoundries (Multi-Billions $US Revenues)
§  Strategic direction advisor to the CEO
§  Technology and IP generation pioneer and world renowned expert
in GaAs and inventor of the POET platform
§  POET technology development for over 20 years
Daniel DeSimone
§  30+ years of semiconductor development and fabrication
experience
§  Responsible for process IP product development
Stephane Gagnon
§  20+ years of semiconductor and telecom management experience §  Responsible for overall operations and business development
Chief Technology
Officer
Chief Operating Officer
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Dr. Geoff Taylor
Chief Scientist
Biography
§  Professor of Electrical & Computer Engineering at the
University of Connecticut
§  Co-Founder & Chief Scientist of POET Technologies Inc.
§  Has dedicated more than 25 years towards the development
of a gallium arsenide (GaAs) semiconductor chip
•  Began research on the GaAs semiconductor chip while
working at Bell Laboratories in New Jersey
§  Background in the areas of materials, devices and circuits for
microelectronics
§  34+ patents issued and 150+ journal papers published
§  B.Sc, Electrical Engineering, Queens University (1966)
M.A.Sc, Electrical Engineering, University of Toronto (1968)
Ph.D, Electrical Engineering, University of Toronto (1972)
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Total Addressable Markets
Global Electronic Component and
Semiconductor Industry
§ 
§ 
Specific Market TAM Examples
Global market is expected to reach
$628 billion, according to MarketLine
Integrated Circuit semiconductors is
the leading market segment with 54%
of overall market
§ 
Cellphone ICs ($119 billion 2016F)
§ 
Standard PC and Tablets ICs ($102
billion 2016F)
§ 
MOS Memories: DRAM, SRAM and
Flash ($89.3 billion 2016F)
§ 
General Purpose Logic ($108 billion
2016F)
§ 
Sensors and Actuators ($13 billion
2016F)
PC & Cellphone IC Markets ($Billions)
$120
$119
$100
$102
Tablet &
Other PC ICs!
$80
$60
Cellp
hone
IC s!
$40
Standard PC ICs!
Source: IC Insights
$20
$0
2008
2009
2010
2011
2012
2013E
2014E
2015E
2016E
Source: IC Insight
Example of POET’s addressable market: PC & Cellphone
IC market is growing to over $220 billion by 2016
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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The Problem
Silicon node migration is hitting
physical barriers:
§  Silicon clock speed is flattening out
§  Power is flattening out with silicon
§  Performance / clock is flattening
with silicon
§  Chip tapeout “Non Recurring
Engineering” (NRE) costs are
escalating geometrically with node
Source: Herb Sutter, “The Free Lunch Is Over: A Fundamental Turn Toward Concurrency
in Software” , Dr. Dobb’s Journal, 30(3), March 2005 (graph updated in 2009)
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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The Solution
Change the Semiconductor Material
§  III-V transistors perform at least 5X better than Si based transistors at same node.
Our projection is that logic performance in our technology should be equivalent
to a 3 to 4 node jump in Si technology
§  III-V transistors also make much better analog circuitry which results in far
superior mixed signal performance that is key to today’s SoCs
§  III-V materials make for excellent photonic devices
Plus INTEGRATE Novel and Disruptive Capabilities
§  New active and passive optical devices to overcome on- and off-chip interconnect
limitations of current Silicon CMOS solutions
§  Novel OE bipolar transistor and thyristor action without stored charge enables very
high speeds PLUS act as photo detectors and emitters
§  New applications made possible by novel devices and integration
§  Optoelectronic functions implemented as co-packaged discrete devices replaced
with single integrated device
POET will enable integration at lower manufacturing costs
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Semiconductor Industry Value Chain
§  Investment costs to keep up with semiconductor performance demand are
increasingly high, and few Fab vendors can afford to keep up
‒  The integrated model is prohibitively high in today’s market
Raw Materials
Semiconductor
Design
Fabless Design
TCAD
Semiconductor
Manufacturing
Foundry
Packaging
Assembly &
Testing
Outsourced
Assembly & Testing
End Products
OEMs
Software
allowing
foundries to
read design
“recipes”
POET can make use of the existing semiconductor manufacturing infrastructure
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Inventions and Process IP
POET - Planar Opto-Electronic Technology
PET - Electrical only Technology
§  Extremely low power -- 4 nodes ahead of Silicon CMOS
-  PET & POET offer 0.3-0.5V operation vs 0.8V in Silicon CMOS
§  High performance applications – Up to 10x faster than current
technologies
POET Applications
Digital
Mixed mode
Analog
High voltage
Optical
§  Multiple optical colors at rates of up to 50 Gbps per color
Main Inventions – Never before realized in GaAs
§  First GaAs process technology to support integrated HFETs and
HBTs (complementary logic)
-  New GaAs p and n HFET devices
PET Applications
Digital
Mixed signal
Analog
-  New GaAs p and n HBT devices
§  Supports concurrent fabrication of fully integrated electrical and
optical circuit components
-  New GaAs Optical Thyristor device
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Process Characteristics
§  POET (Planar Opto-Electronic Technology) is a novel III-V compound semiconductor
process technology which utilizes InGaAs modulation doped Quantum Wells
§  First GaAs process technology to support complementary HFETs enabling significant
static power savings compared to bipolar or active load compound semiconductor
processes in use today
§  POET supports concurrent fabrication of a full range of highly efficient electrical and
optical circuit components on a single die in a single process
§  Provides density similar to traditional Silicon CMOS
§  Provides dramatically reduced switching and non-switching power consumption
compared to silicon technologies
§  Compatible with existing and planned package technology
§  Standard wafer epitaxy techniques and equipment
§  Standard lithography-based fabrication techniques and equipment
§  Provides traditional GaAs compound semiconductor electrical and optical
performance capabilities
§  Supports fabrication of vertical and horizontal laser cavities
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Value Proposition for
Foundry Partner
§  Increase serviceable addressable markets (SAM) by offering
-  Speed and power upgrades for high speed digital offering
-  Photonics
-  Analog, Mixed Signals, Digital and optical integration capabilities
-  Universal memory cell (NVRAM, DRAM and SRAM)
-  Radiation Hardness
-  IGBT implementation for power applications/epitaxy in GaN
§  PET and POET process will match power/performance roadmap 3-4 node sizes ahead
of Silicon CMOS
-  Extends Moore’s laws for foundries at much lower R&D and new investments
costs
-  Lowers tapeout costs for fabless customers (see comparisons on slides 4 & 5)
§  Roadmap to integration of QUBIT blocks with conventional logic for Quantum
Computing future application
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Value Proposition for
Datacenter
Key Value Proposition
§  Significant server farm computational efficiency savings
§  True acceleration of single-thread computing at higher clock frequencies with lower
power §  Novel system partitioning, reducing electrical noise and power, utilizing chip to chip
optical interconnect capable of 50 gbps per I/O (DWDM capable)
POET enables on-chip coexistence of analog, digital, optical, and mixed-signal
functions
§  Full on-device optical circuit capability, same-die same PIC (Photonic Integrated
Circuit) capable process
§  Denser and lower noise designs are now possible using multi-color optical
generation and global distribution of signals (e.g. clocks)
§  Lower operating voltage provides reduced power even at higher clock rates
§  Advanced optical capabilities, novel system interconnect via chip to chip optical, onchip and inter-chip switching fabric, optical computing are all possible with POET
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Universal Memory Cell
Memory architecture simplification of datacenter representing huge costs savings
§  POET supports a high speed, very high density thyristor-based universal memory
cell
§  A single memory array can be operated as an SRAM, a DRAM, or NVRAM
depending on controller configuration
§  NVRAM capability is phase-change type so no write-based device reliability issues
like NAND flash
§  Can eliminate need for dedicated NVRAM for system backup and recovery since all
embedded memories already have NVRAM capability
§  Density comparable to leading edge DRAM, and much higher than existing SRAM,
NAND flash, NOR flash, or PCRAM technologies
§  Wide band gap material provides much higher noise immunity than Silicon-based
technologies (several orders of magnitude improvement in soft error rates)
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Application Examples vs.
POET Capabilities
Processors
and
SoCs
§  High Performance and Power step function
§  Low voltage operation è 0.3-0.5V
§  Analog and Mixed signal integration of arbitrary
functions
§  CCD imaging, visible and IR
§  Applicable at all geometry levels from 3u to sub
28nm
§  TJ solar cell integrated with power control for all
mobile systems
Analog
and
Digital
Optical
Applications
-
Data Centers
Servers
Optical
Components
§  Enabling microprocessor design at > 20GHz
§  Memory structures for NVRAM, SRAM and DRAM
§  Enabling Opto-Electronic designs on the same die
§ 
§ 
§ 
§ 
VCSELs, 2D VCSEL arrays with integrated drivers
High speed tunable lasers with integrated drivers
TW detectors, SOA’s, modulators with electronics
3D Packaging electrical and optical
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Manageable adoption
for Industry Partners
Fabless
Design
TCAD
Foundry
Design
§  Industry standard design tool flows
§  Addresses multiple process nodes
§  Low adoption cost
Manufacturing and Testing
§  Supports existing manufacturing and testing infrastructure
Outsourced
Assembly
& Testing
§  Employs all existing test on wafers techniques
§  Supports existing Silicon CMOS post fabrication procedures
Performance and Integration
OEMs
§  Up to 90% solution power savings versus existing technologies
§  Low core voltage operations possible down to 300mV
§  Supports electrical devices switching at over 500 GHz
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Monetization Strategy
Direct Foundry NRE
§  Paid by foundries for POET to transfer and enable their foundry with PET/POET flow
§  Replaces R&D $$$ they would have spent on developing this capability in-house
Foundry Design KIT – Flow-through NRE Royalties
§  Percentage of the POET foundry design kit revenue from foundries that develop
libraries and specific design kits targeting the POET process that they will sell to their
customers
Market Leaders NRE
§  Industry leaders in specific markets to buy exclusivity rights
-  Lock in POET IP keeping their competition out from using POET IP Semiconductor Chip Sales Royalties
§  Royalties on future semiconductor chip sale POET enabled from the foundry flow
Initial NRE revenues expected to start in 2H2015
§  End customer NRE, Foundry NREs, or a combination thereof
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Synopsys TCAD and
Enablement
POET Process Design Kit (PDK) Development
§  POET and Synopsys are collaborating on the deployment of Sentaurus TCAD for the
PDK project
§  Synopsys Sentaurus Process and Device TCAD software is used to accelerate
development of a POET PDK for technology transfers to potential manufacturing
partners
•  Process parameters and device design are optimized for manufacturability and
performance
•  Calibration to measured structures ensures and verifies quality and accuracy of the
technology description minimizing process transfer qualification time
POET PDK Development
§  TCAD is also used to provide a pre-fabrication PDK suitable for design exploration
§  Allows early stage exploration for “System on a Chip” (SoC) and optical
interconnect architectures leveraging unique functionality and performance of
novel POET/PET technologies
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Achieved Technical Milestones
Milestone!
Date!
Technical Achievement!
Definitions!
Q2-11!
Integrated Pulsed Laser"
General purpose laser for on-chip use."
Q2-11!
p and n channel Complementary Heterostructure Field
Effect Transistor Validation1"
High performance, power efficient transistors. World’s first complementary GaAs
HFETs."
Q4-12!
Continuous Wave Vertical Cavity Surface Emitting Laser
Demonstration"
High density laser design for surface-emitting applications (e.g. chip-to-chip in
stacked-die array)."
Q1-13!
n-channel and p-channel Complementary
Heterostructure Field Effect Transistor Radio Frequency
Validation1
Demonstrating radio frequency and microwave performance of revolutionary
complementary HFETs."
Q1-14!
3/4 Terminal Switching Laser Demonstration"
High quality pulsed laser type for critical signal propagation (e.g. clocks, optical
line signaling)."
Q2-13!
Complementary Heterostructure Field Effect Transistorbased Inverter/Oscillator Demonstration"
Complementary HFET-based ring oscillator (standard circuit configuration used
to demonstrate process performance)."
Q1-14!
Optical Thyristor-based Infrared Detector Array
Fabrication and Validation1"
An array of optical thyristors configured as infrared detectors."
Q3-14!
Demonstration of 100 nm or below PET n- and pchannel device"
Demonstration of p and n type HFETs and BJTs at sub-100 nm feature size."
Performance optimization phase on-going."
Q1-14!
POET TDK (Technical Design Kit) Documentation"
Full POET platform TDK documentation release."
Note 1: Milestones noted above were accomplished with a 3rd party fab partner, an international defense services company that is a global leader in military
electronic systems design, development, manufacturing and integration. The 3rd party partner has world-class GaAs research facilities and has numerous
PhD researchers. POET’s partnership has successfully reproduced the POET technology as published, by producing and testing the critical electrical
elements of POET Platform sub-process steps for transistors.
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Future Technical Milestones
and 2015 Roadmap
Milestone Timeframe* Technical Milestone Defini4ons PET Founda+on PDK (Process Design Kit) targe+ng 40nm (V 1.0) Design rules and parameters library models for PET process. Devices include complementary HFET and HBT transistor and a thyristor with both op+cal and electrical opera+on. 3rd Party Foundry 40/100nm transfer Bring up cri+cal layers manufacturing capability in external foundry. Accelerates comple+on of development and op+miza+on learning cycles on 100 and 40nm structures. Also enables more complex test structures. Q1-­‐15 Electrical 100nm ring oscillator Demonstra+on vehicle for high speed performance and power at 100nm process node. Reference standard to compare to Silicon CMOS. Q1-­‐15 50 GHz VCSEL 50 GHz DWDM (dense wavelength division mul+plexing) ver+cal cavity laser device Q1-­‐15 Completed Milestone Timeframe* 2015 Capability Development!
Roadmap Definitions!
PET PDK v2.0 Adds mixed signal and I/O capability Adds high frequency low noise devices for analog and 2.5V HEMTs for electrical I/O to the PET PDK. Update PDK with new devices and calibra+on. Op+cal On-­‐Chip Signal Distribu+on Components Develop and successful demonstra+on of individual components necessary to build WDM op+cal distribu+on and conversion from E-­‐O and O-­‐E. SRAM Structure Develop and successful demonstra+on of 2T thyristor-­‐based bit cell, read and write amps. Goal of layout density greater than equivalent CMOS bit cell at same node. Demonstra+on Digital Cell Library Create basic set of digital cells suitable for trial SoC block post layout performance evalua+on. * Note: Please see Milestone Disclaimer on the next page
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Milestone Disclaimer
The Milestone schedule contained in this presentation was prepared in good faith; however, the Company does not warrant
that it will achieve any results projected in this presentation. This presentation contains "forward-looking
information" (within the meaning of applicable Canadian securities laws) and "forward -looking statements" (within the
meaning of the U.S. Private Securities Litigation Reform Act of 1995). Such statements include all aspects of the milestones
scheduled to be performed after the date of this presentation.
Such forward-looking information or statements are based on a number of risks, uncertainties and assumptions which may
cause actual results or other expectations to differ materially from those anticipated and which may prove to be incorrect.
Assumptions have been made regarding, among other things, plans for and completion of projects by the Company’s third
party relationships, availability of capital, and the necessity to incur capital and other expenditures. Actual results could
differ materially due to a number of factors, including, without limitation, operational risks in the completion of the
Company’s anticipated projects, delays or changes in plans with respect to the development of the Company’s anticipated
projects by the Company’s third party relationships, risks affecting the Company’s ability to execute projects, the ability to
attract and retain key personnel, and the inability to raise additional capital. Although the Company believes that the
expectations reflected in the forward-looking information or statements are reasonable, you should not place undue
reliance on forward-looking statements because the Company can provide no assurance that such expectations will prove
to be correct. Forward- looking information and statements contained in this presentation are as of the date of this
presentation and the Company assumes no obligation to update or revise this forward-looking information and statements
except as required by law.
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Operational Roadmap
Expansion of POET Lab Facility into a 3rd Party Fab
§  Provides POET with operational backup plan (disaster relief)
§  Increase the capacity of our R&D process and device IP development
§  Replication and transfer of current process at a larger scale
•  Multi-wafer and multi-lot
§  Automated production manufacturing with concurrent development capability
•  ISO Certified Facility
§  3” and 6” wafer sizes capabilities
§  Packaging, package and wafer level automated test capabilities
§  Prototyping capability at 100-nm critical features with a goal to reduce to 40-nm
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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Summary
POET - Ready at the right time
§  Silicon CMOS evolution is ending
§  POET will provide a much needed performance and power correction to Moore’s Law
§  Industry’s doubt that Silicon CMOS nodes of 10 and 7nm will succeed
§  Industry is ready for a paradigm shift for the fabrication of complementary logic
semiconductor devices
POET enables new innovations
§  POET enables mixing on the same chip analog, digital and optical devices that will
lead to new innovative products and device consolidation never before possible
§  POET offers a III-V process with very high performance gains over Silicon CMOS
§  POET low voltage operation enables up to a 90% application power savings
POET enables system cost savings
§  Possible device consolidation will lower manufacturing costs at the module and
system level
§  POET will enable much lower system OPEX due to application power savings
© 2015 POET Technologies Inc. – Corporate Presentation February 2015
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