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IL211AT/ 212AT/ 213AT
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection in
SOIC-8 package
Features
• Isolation Voltage, 3000 VRMS
• Industry Standard SOIC-8A Surface Mountable
Package
• Compatible with Dual Wave, Vapor Phase and IR
Reflow Soldering
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A 1
8
NC
K 2
7
B
NC 3
6
C
NC 4
5
E
e3
i179002
Agency Approvals
• UL1577, File No. E52744 System Code Y
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Pb
Pb-free
In addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
A choice of 20, 50, and 100 % minimum CTR at
IF = 10 mA makes these optocouplers suitable for a
variety of different applications.
Description
The IL211AT/ IL212AT/ IL213AT are optically coupled pairs with a Gallium Arsenide infrared LED and
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the device
while maintaining a high degree of electrical isolation
between input and output. The IL211AT/ IL212AT/
IL213AT comes in a standard SOIC-8 small outline
package for surface mounting which makes it ideally
suited for high density applications with limited space.
Order Information
Part
Remarks
IL211AT
CTR > 20 %, SOIC-8
IL212AT
CTR > 50 %, SOIC-8
IL213AT
CTR > 100 %, SOIC-8
Available only on Tape and Reel Option
(Conforms to EIA Standard RS481A)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Peak reverse voltage
Forward continuous current
Power dissipation
Derate linearly from 25 °
Document Number 83615
Rev. 1.5, 26-Oct-04
Test condition
Symbol
Value
Unit
VR
6.0
V
IF
60
mA
Pdiss
90
mW
1.2
mW/°C
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1
IL211AT/ 212AT/ 213AT
Vishay Semiconductors
Output
Symbol
Value
Unit
Collector-emitter breakdown voltage
Parameter
Test condition
BVCEO
30
V
Emitter-collector breakdown voltage
BVECO
7.0
V
Collector-base breakdown voltage
VCEO
70
V
ICMAX DC
50
mA
ICMAX
100
mA
Pdiss
150
mW
2.0
mW/°C
Symbol
Value
Unit
Ptot
240
mW
3.2
mW/°C
Storage temperature
Tstg
- 55 to +150
°C
Operating temperature
Tamb
- 55 to +100
°C
10
sec.
ICMAX DC
ICMAX
t < 1.0 ms
Power dissipation
Derate linearly from 25 °C
Coupler
Parameter
Total package dissipation
Test condition
(LED + Detector)
Derate linearly from 25 °C
Soldering time at 260 °C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Typ.
Max
Unit
VF
1.3
1.5
V
VR = 6.0 V
IR
0.1
100
µA
VR = 0
CO
13
Forward voltage
IF = 10 mA
Reverse current
Capacitance
Symbol
Min
pF
Output
Symbol
Min
Collector-emitter breakdown
voltage
Parameter
IC = 10 µA
Test condition
BVCEO
30
Typ.
Max
V
Emitter-collector breakdown
voltage
IE = 10 µA
BVECO
7.0
V
Collector dark current
VCE = 10 V
ICEO
5.0
Collector-emitter capacitance
VCE = 0
CCE
10
50
Unit
nA
pF
Coupler
Parameter
Test condition
Saturation voltage, collector-emitter
IF = 10 mA
Isolation test voltage
1 sec.
Symbol
Min
Typ.
VCEsat
VISO
0.5
Resistance input to output
RIO
100
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2
BVCEO
V
VRMS
CIO
IC = 10 µA
Unit
0.4
3000
Capacitance (input-output)
Collector-emitter breakdown voltage
Max
30
50
pF
GΩ
V
Document Number 83615
Rev. 1.5, 26-Oct-04
IL211AT/ 212AT/ 213AT
Vishay Semiconductors
Current Transfer Ratio
Parameter
Test condition
IF = 10 mA, VCE = 5.0 V
Current Transfer Ratio
Part
Symbol
Min
Typ.
IL211AT
CTR
20
50
Max
Unit
%
IL212AT
CTR
50
80
%
IL213AT
CTR
100
130
%
Switching Characteristics
Parameter
Switching time
Test condition
Symbol
IC = 2 mA, RL = 100 Ω,
VCC = 10 V
ton, toff
Min
Typ.
Max
Unit
µs
3.0
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Ta = -55°C
1.2
Ta = 25°C
1.1
1.0
0.9
Ta = 100°C
0.8
0.7
.1
150
ICE- Collector-emitter Current - mA
VF - Forward Voltage - V
1.4
1.3
1
10
IF - Forward Current - mA
VCE= 10 V
100
50
VCE= 0.4 V
0.1
100
iil211at_01
1
10
IF - LED Current - mA
iil211at_03
Figure 1. Forward Voltage vs. Forward Current
1.5
100
Normalized to:
VCE =10 V
IF =10 mA
TA =25°C
VCE= 5 V
1.0
0.5
100
Figure 3. Collector-Emitter Current vs.LED Current
NICB - Normalized I CB
NCTRCE - Normalized - CTRCE
TA = 25°C
ı
Normalized to:
VCB = 9.3 V
IF =1 mA
TA = 25°ıC
10
1
VCE= 0.4 V
0.0
.1
iil211at_02
10
1
IF - LED Current - mA
Figure 2. Normalized Non-saturated and Saturated CTRCE vs.
LED Current
Document Number 83615
Rev. 1.5, 26-Oct-04
.1 .1
100
iil211at_04
1
10
IF - LED Current - mA
100
Figure 4. Normalized Collector-Base Photocurrent vs. LED
Current
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3
IL211AT/ 212AT/ 213AT
Vishay Semiconductors
2.0
Normalized to:
VCB = 9.3 V
IF =10 mA
TA = 25°C
1
.1
.01 .1
1
10
IF - LED Current - mA
iil211at_05
ICB- Collector-base Current - µA
100
Input:
IF =10 mA
Pulse width = 100 mS
Duty cycle = 50%
1000
5
TON
1.0
100
10K
Figure 6. Collector-Base Photocurrent vs. LED Current
10 4
500
Switching time (µS)
VCE = 10 V
101
Typical
10 0
40
60
80
Figure 7. Collector-Emitter Leakage Current vs.Temp.
1M
Input:
IF =10 mA
Pulse width = 100 mS
Duty cycle = 50%
FF
TO
50
10
TON
5
1
100
TA - Ambient Temperature - °C
500K
100
10 -1
20
100K
Figure 9. Typical Switching Characteristics vs. Base Resistance
(Saturated Operation)
1000
10 2
50K
Base-emitter resistance, RBE (Ω)
10 5
10 3
F
T OF
10
iil211at_09
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10
Ib - Base Current - µA
Figure 8. Normalized Saturated HFE vs. Base Current and
Temperature
Switching time (µs)
1
10
IF - LED Current - mA
iil211at_06
ICEO - Collector-emitter - nA
Vce = 0.4 V
0.5
1
.1
4
Ta = 25°C
1.0
50
1
iil211at_07
Vce = 10 V
100
10
0
Ib = 20 µA
25°C
iil211at_08
100
10-2
-20
Normalized to:
0.0
TA = 25°C
VCB = 9.3 V
.1
1.5
100
Figure 5. Normalized Collector-Base Photocurrent vs. LED
Current
1000
70°C
50°C
NHFE(sat) - Normalized
Saturated HFE
NICB - Normalized ICB
10
0.1
iil211at_10
0.5
1
5
10
50 100
Load resistance RL (KΩ)
Figure 10. Typical Switching Times vs. Load Resistance
Document Number 83615
Rev. 1.5, 26-Oct-04
IL211AT/ 212AT/ 213AT
Vishay Semiconductors
INPUT
0
VCC=5 V
toff
ton
tpdoff
tpdon
Input
RL
V OUT
td
OUTPUT
tr
0
tr
ts
10%
10%
50%
50%
90%
90%
iil211at_11
Figure 11. Switching Test Circuit
Package Dimensions in Inches (mm)
R .010 (.13)
.120± .005
(3.05± .13)
.240
(6.10)
.154± .005
CL
(3.91± .13)
.050 (1.27)
.014 (.36)
.036 (.91)
.170 (4.32)
.260 (6.6)
.016 (.41)
Pin One ID
.192± .005
(4.88± .13)
.004 (.10)
.008 (.20)
.015± .002
(.38± .05)
40°
.008 (.20)
5° max.
ISO Method A
.050 (1.27)
typ.
.021 (.53)
.020± .004
(.51± .10)
2 plcs.
R.010
(.25) max.
.045 (1.14)
7°
.058± .005
(1.49± .13)
.125± .005
(3.18± .13)
Lead
Coplanarity
±.0015 (.04) max.
i178003
Document Number 83615
Rev. 1.5, 26-Oct-04
www.vishay.com
5
IL211AT/ 212AT/ 213AT
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
6
Document Number 83615
Rev. 1.5, 26-Oct-04