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CNY64, CNY65, CNY66
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Very High Isolation Voltage
FEATURES
• Rated recurring peak voltage (repetitive)
VIORM = 1000 VRMS
64
• Thickness through insulation ≥ 3 mm
65
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI ≥ 200
Top View
A
C
4
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
66
C
E
V
D E
APPLICATIONS
• Switch-mode power supplies
17187
• Line receiver
DESCRIPTION
The CNY64/CNY65/CNY66 consist of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 4 pin plastic package.
The single components are mounted opposite one another,
providing a distance between input and output for highest
safety requirements of > 3 mm.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
• DIN EN 60747-5-5 (VDE 0884)
Optocoupler for electrical safety requirements
• IEC 60950/EN 60950
Office machines (applied for reinforced isolation for mains
voltage ≤ 400 VRMS)
• VDE 0804
Telecommunication apparatus and data processing
• IEC 60065
Safety for mains-operated electronic and related
household apparatus
• VDE 0700/IEC 60335
Household equipment
• VDE 0160
Electronic equipment for electrical power installation
• VDE 0750/IEC 60601
Medical equipment
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - IV at mains voltage ≤ 600 V
- for appl. class I - III at mains voltage ≤ 1000 V
according to DIN EN 60747-5-5 (VDE 0884)
AGENCY APPROVALS
• UL1577, file no. E76222 system code H, J, and K, double
protection
• DIN EN 60747-5-5 (VDE 0884)
• VDE related features:
- rated impulse voltage (transient overvoltage),
VIOTM = 8 kV peak
- isolation test voltage (partial discharge test voltage),
Vpd = 2.8 kV peak
ORDER INFORMATION
PART
REMARKS
CNY64
CTR 50 to 300 %, high isolation distance, 4 pin
CNY65
CTR 50 to 300 %, high isolation distance, 4 pin
CNY66
CTR 50 to 300 %, high isolation distance, 4 pin
CNY64A
CTR 63 to 125 %, high isolation distance, 4 pin
CNY65A
CTR 63 to 125 %, high isolation distance, 4 pin
CNY64B
CTR 100 to 200 %, high isolation distance, 4 pin
CNY65B
CTR 100 to 200 %, high isolation distance, 4 pin
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For technical questions, contact: [email protected]
Document Number: 83540
Rev. 1.7, 20-Oct-08
CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output, Vishay Semiconductors
Very High Isolation Voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5
V
Forward current
IF
75
mA
IFSM
1.5
A
Pdiss
120
mW
Tj
100
°C
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
7
V
tP ≤ 10 µs
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector current
IC
50
mA
ICM
100
mA
Pdiss
130
mW
Tj
100
°C
tP/T = 0.5, tP ≤ 10 ms
Collector peak current
Power dissipation
Junction temperature
COUPLER
VISO
8.2
kV
Total power dissipation
AC Isolation test voltage (RMS)
t = 1 min
Ptot
250
mW
Ambient temperature range
Tamb
- 55 to + 85
°C
Storage temperature range
Tstg
- 55 to + 100
°C
Tsld
260
°C
2 mm from case, ≤ 10 s
Soldering temperature
Note
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
1.6
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.25
VR = 0, f = 1 MHz
Cj
50
Collector emitter voltage
IC = 1 mA
VCEO
32
V
Emitter collector voltage
IE = 100 µA
VECO
7
V
VCE = 20 V, If = 0 A
ICEO
200
nA
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
110
kHz
f = 1 MHz
Ck
0.3
pF
Junction capacitance
V
pF
OUTPUT
Collector emitter leakage current
COUPLER
Coupling capacitance
Note
Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the
device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
IC/IF
Document Number: 83540
Rev. 1.7, 20-Oct-08
TEST CONDITION
VCE = 5 V, IF = 5 mA
PART
SYMBOL
MIN.
CTR
50
300
%
CNY64A
CTR
63
125
%
CNY65A
CTR
63
125
%
CNY64B
CTR
100
200
%
CNY65B
CTR
100
200
%
For technical questions, contact: [email protected]
TYP.
MAX.
UNIT
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237
CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
Very High Isolation Voltage
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF
120
mA
Pdiss
250
mW
VIOTM
10
kV
Tsi
150
°C
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
Note
According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
TEST CONDITION
SYMBOL
MIN.
Partial discharge test voltage routine test
PARAMETER
100 %, ttest = 1 s
Vpd
2.8
kV
Partial discharge test voltage lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
Vpd
2.2
kV
Ω
Insulation resistance
TYP.
MAX.
UNIT
VIO = 500 V, Tamb = 25 °C
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109
Ω
VIOTM
250
225
t1, t2
t3 , t4
ttest
tstres
Psi (mW)
200
175
150
VPd
125
VIOWM
VIORM
100
75
= 1 to 10 s
=1s
= 10 s
= 12 s
Isi(mA)
50
25
0
0
0
95 10922
25
50
75 100 125 150 175 200
13930
Tamb (°C)
t3 ttest t4
tTr = 60 s
t1
t2
t stres
t
Fig. 1 - Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
Delay time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
td
2.6
µs
Rise time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
tr
2.4
µs
Fall time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
tf
2.7
µs
Storage time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
ts
0.3
µs
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
ton
5.0
µs
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
toff
3.0
µs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4)
ton
25.0
µs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4)
toff
42.5
µs
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238
MIN.
For technical questions, contact: [email protected]
TYP.
MAX.
UNIT
Document Number: 83540
Rev. 1.7, 20-Oct-08
CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output, Vishay Semiconductors
Very High Isolation Voltage
IF
0
IF
0
IC = 5 mA; adjusted through
input amplitude
RG = 50
tp
= 0.01
T
tp = 50 µs
Channel II
100
10 %
0
Oscilloscope
RL 1 M
CL 20 pF
95 10900
tr
td
ts
t on
tp
td
tr
t on (= td + tr)
Pulse duration
Delay time
Rise time
Turn-on time
Fig. 3 - Test Circuit, Non-Saturated Operation
IF
t
100 %
90 %
Channel I
50
tp
IC
+5V
IF
t
tf
t off
ts
tf
t off (= ts + tf)
Storage time
Fall time
Turn-off time
96 11698
Fig. 5 - Switching Times
+5V
IF = 10 mA
0
IC
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Channel II
50 Ω
1 kΩ
Oscilloscope
R L ≥ 1 MΩ
C L ≤ 20 pF
95 10843
Fig. 4 - Test Circuit, Saturated Operation
TYPICAL CHARACTERISTICS
200
1000
IF - Forward Current (mA)
Ptot - Total Power Dissipation (mW)
Tamb = 25 °C, unless otherwise specified
160
120
Coupled device
80
Phototransistor
IR-diode
40
0
0
95 11003
25
50
75
100
Tamb - Ambient Temperature (°C)
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Document Number: 83540
Rev. 1.7, 20-Oct-08
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
VF - Forward Voltage (V)
Fig. 7 - Forward Current vs. Forward Voltage
For technical questions, contact: [email protected]
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239
CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
100
1.5
VCE = 5 V
IF = 10 mA
1.4
1.3
IC - Collector Current (mA)
CTRrel - Relative Current Transfer Ratio
Very High Isolation Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Tamb - Ambient Temperature (°C)
2 mA
1
1 mA
1
10
100
VCE - Collector Emitter Voltage (V)
Fig. 11 - Collector Current vs. Collector Emitter Voltage
1000
1.0
0.9
VCEsat - Collector Emitter
Saturation Voltage (V)
VCE = 20 V
IF = 0
100
10
0.8
0.7
CTR = 50 %
0.6
0.5
0.4
0.3
0.2
20 %
0.1
10 %
0.0
1
1
0 10 20 30 40 50 60 70 80 90 100
96 12000
Tamb - Ambient Temperature (°C)
VCE = 5 V
10
1
0.1
95 11012
1
10
100
IF - Forward Current (mA)
Fig. 10 - Collector Current vs. Forward Current
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240
100
Fig. 12 - Collector Emitter Saturation Voltage vs.
Collector Current
CTR - Current Transfer Ratio (%)
100
0.01
0.1
10
IC - Collector Current (mA)
96 11912
Fig. 9 - Collector Dark Current vs. Ambient Temperature
IC - Collector Current (mA)
5 mA
95 11013
Fig. 8 - Relative Current Transfer Ratio vs.
Ambient Temperature
ICEO - Collector Dark Current,
with open Base (nA)
10 mA
10
0.1
0.1
0.5
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80
96 11911
IF = 50 mA
1000
VCE = 5 V
100
10
1
0.1
95 11015
1
10
100
IF - Forward Current (mA)
Fig. 13 - Current Transfer Ratio vs. Forward Current
For technical questions, contact: [email protected]
Document Number: 83540
Rev. 1.7, 20-Oct-08
CNY64, CNY65, CNY66
50
ton/toff - Turn-on/Turn-off Time (µs)
ton/toff - Turn-on/Turn-off Time (µs)
Optocoupler, Phototransistor Output, Vishay Semiconductors
Very High Isolation Voltage
toff
40
30
ton
20
Saturated operation
VS = 5 V
RL = 1 kΩ
10
0
0
95 11017
5
10
20
15
20
15
toff
10
5
0
0
IF - Forward Current (mA)
95 11016
Fig. 14 - Turn-on/Turn-off Time vs. Collector Current
Non-saturated
operation
VS = 5 V
RL = 100 Ω
ton
4
2
6
8
10
IC - Collector Current (mA)
Fig. 15 - Turn-on/Turn-off Time vs. Forward Current
PACKAGE DIMENSIONS in millimeters FOR CNY64
12.8 ± 0.1
9.1 ± 0.3
6.01 ± 0.1
7.2 ± 0.1
10.16 ± 0.2
5.08 ± 0.2
4
0.
5
0.
A
Cath
Coll
Weight: ca. 0.73 g
Creepage distance: > 9.5 mm
Air path: > 9.5 mm
after mounting on PC board
E
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5038.01-4
Issue: 2; 10.11.98
14765
Document Number: 83540
Rev. 1.7, 20-Oct-08
For technical questions, contact: [email protected]
www.vishay.com
241
CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
Very High Isolation Voltage
PACKAGE DIMENSIONS in millimeters FOR CNY65
17.8 ± 0.1
9.1 ± 0.3
6.1 ± 0.1
9.6 ± 0.1
15.24 ± 0.2
7.62 ± 0.2
technical drawings
according to DIN
specifications
4
0.
5
0.
A
Weight: ca. 1.40 g
Creepage distance: > 14 mm
Air path: > 14 mm
after mounting on PC board
Coll
Cath
E
14763
PACKAGE DIMENSIONS in millimeters FOR CNY66
9.6 ± 0.1
9.1 ± 0.3
6.1 ± 0.1
20.4 ± 0.1
17.8 ± 0.2
7.62 ± 0.2
technical drawings
according to DIN
specifications
4
0.
5
0.
A
Cath
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Coll
Weight: ca. 1.70 g
Creepage distance: > 17 mm
Air path: > 17 mm
after mounting on PC board
E
For technical questions, contact: [email protected]
14764
Document Number: 83540
Rev. 1.7, 20-Oct-08
CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output, Vishay Semiconductors
Very High Isolation Voltage
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 83540
Rev. 1.7, 20-Oct-08
For technical questions, contact: [email protected]
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243
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1