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Department of
Electronic Science
University of Delhi SouthCampus
Benito Juarez Road,
New Delhi - 110021
1
The Department of Electronic Science was established in 1985
and is widely recognised as one of the most prestigious
Electronic Science Departments in the country.
The Department is conducting courses leading to M.Tech in
Microwave Electronics and M.Sc. in Electronics. The aim of
these programmes is to provide the necessary theoretical
background and practical experience in order to meet the
requirements of the R&D Organizations and Industries. All
students joining the M.Sc. course are required to undergo summer
training in the Industry or R&D Organisations. In addition, the
M.Tech and M.Sc. students work for 6 months on projects in
collaboration with Industry and R&D Organisations. The
curriculum of these courses is updated regularly to keep it in
consonance with the changing industrial environment. The
interface with the Industry is further enhanced by an annual
seminar under the Visitor’s Programme in which professionals
from industry, R&D organizations and academics are invited. Our
alumini, now spread over a large number of government and
private organisations, facilitate these interactions.
A full range of resources and facilities are available to the
students. The department has a well equipped computer
laboratory with various circuit simulation and microwave design
software for students. In addition, there are well equipped
laboratories for experimental work in the following areas:
Microwave Measurements, Communication Electronics, Circuit
Design, Electrical Machines and Control Systems, Electronic
Materials and Semiconductor Devices, Microprocessors and
Digital Signal Processing and Optical Electronics.
Attempt is made to assess the students’ performance through
continuous series of tests and presentations in addition to
semester end examinations to ensure highest standards.
The Department is actively helping the students in their
placement through Campus interviews. Students graduating from
the Department have found positions in both government and
private organizations working in Space Applications,
Telecommunications and Semiconductors.
The students graduating from the programs have the necessary theoretical and practical skills to
take on any R&D and Production responsibilities in today’s complex and challenging environment.
This is evident from the contributions and achievements of our alumni in organizations like ST
Microelectronics, Cadence, HFCL, Aricent, Transwitch, SAMEER, ISRO, DRDO laboratories and
many more. The faculty members are actively engaged in research as well as supervision of
research leading to the Ph.D. degree in the field of optical electronics, semiconductors, microwaves
and microelectronics. The Department has national and international collaborations and several
research projects funded by the UGC, CSIR, DST, MIT, AICTE, DRDO, NSF (USA) and JSPS
(Japan) and University of Delhi.
2
FACULTY
S.
No.
1
Name
Qualification
Designation
Specialization
Prof. P.K. Bhatnagar
Ph.D
Professor &
Head
Semiconductor and Nano
materials, Solid State Devices
2
Prof. E. K. Sharma
Ph.D
Professor
Optical Electronics,
Fiber/Integrated Optics and
Microwave Photonics
3
Prof. Avinashi
Kapoor
Ph.D
Professor
Photovoltaics, OptoElectronics, Integrated Optics
4
Prof. Mridula Gupta
Ph.D
Professor
Microelectronics,
Communication and
Microwaves
5
Dr. Harsupreet Kaur
Ph.D
Assistant
Professor
Microelectronics
(Semiconductor Device Modeling
and Simulation)
6
Mr. Kamlesh Patel
M. Tech.
Assistant
Professor
Microwave components and
characterizations
7
Dr. P. Koteswara
Rao
Ph.D,
Post-Doc
Assistant
Professor
Semiconductor Materials and
Devices
8
Mr. Amit Birwal
M. Tech.
Assistant
Professor
Microwave communications
3
COURSES OFFERED
The Department conducts courses leading to M.Tech in Microwave Electronics and M.Sc. in
Electronics. These courses were approved in 1976 and 1984, respectively. All students joining the
M.Sc. course are required to undergo training of 8 weeks in an Industry or R&D Organisation. In
addition, the M.Tech and M.Sc. students work for 6 months on projects in collaboration with
similar organisations. The curriculum of these courses is updated regularly to keep it in consonance
with the changing industrial environment. The interface with Industry is further enhanced by an
annual seminar under the Visitor’s Programme for the Department.
The Department actively helps the students in their placement through Campus interviews. Students
graduating from the Department have found positions in both government and private organizations
working in Space Applications, Telecommunications and Semiconductors etc.
The faculty members are actively engaged in research as well as supervising the schalors leading to
the Ph.D. degree in the field of optical electronics, semiconductors, microwaves and
microelectronics. The Department has international collaborative projects as well as several
research projects funded by the UGC, CSIR, DST, MIT & DRDO.
M. Tech. Programme
Semester I
1.1 Electromagnetic Theory and Transmission Lines
100
1.2 Microwave and MM-Wave Planar Transmission Lines
100
1.3 Microwave Measurement Techniques and Industrial Microwaves
100
1.4 Microwave Devices
100
1.5 Microwave Measurements Laboratory
100
TOTAL
500
Semester II
2.1 Microwave Passive Components
100
2.2 Antenna Theory and Techniques
100
2.3 Communication Theory and Wave Propagation
100
2.4 Computational Electromagnetics
100
2.5 Computational Laboratory
100
TOTAL
500
4
Semester III
3.1
Microwave Active Circuits
100
3.2
Communication Systems
100
3.3
Microwave Integrated Circuits
(CAD, Fabrication and Measurements)
200
TOTAL
400
Semester IV
4.1 Major Project (six months duration)
TOTAL (FOUR SEMESTERS)
400
1800
M. Sc. Programme
Semester I
1.1 High-level Computer Language and Operating System
50
1.2 Engineering Mathematics
50
1.3 Network Analysis and Synthesis
50
1.4 Advanced Analog and Digital Circuit Design
50
1.5 Practical I : High level Computer Languages and Operating Systems
25
1.6 Practical II : Electronic Circuits
1.7 Practical III : Microprocessors
25
25
1.8 Practical IV : Computational Techniques
Semester I total
25
300
Semester II
2.1 Electromagnetics, Antenna and Propagation
50
2.2
Seminconductor Devices and Materials
50
2.3
Microprocessors
50
2.4
Signal Systems and Control
50
5
2.5
Practical I : Electromagnetics
25
2.6
Practical II : Materials and Semiconductor Devices
25
2.7
Practical III : Circuit Design and Simulation
25
2.8
Practical IV : Electrical Machines and Control Systems
Semester II total
Summer Training (8 weeks)
25
300
50
Semester III
3.1
Optical Electronics
50
3.2
Integrated Circuit Technology
50
3.3
Digital Signal Processing
50
3.4
Communication Systems
50
3.5
Practical I : Optical Electronics
25
3.6
Practical II : Science and Technology of Semiconductor Devices
25
3.7
Practical III : Digital Signal Processing
25
3.8
Practical IV : Communication Systems
Semester III total
25
300
Semester IV
4.1
Quantum Electronics
50
4.2
VLSI Circuit Design and Device Modeling
50
4.3
Modern Communication Systems
50
4.4
Microwave Electronics
50
4.5
Seminar
25
4.6
Lectures from Industry
25
4.7
Project
Semester IV total
Grand Total
200
450
1400
6
RESEARCH PROGRAMS
The faculty of the Department is actively engaged in research in many contemporary areas. The
research activity is mainly supported through sponsored projects from various agencies like DRDO,
MIT, DST, CSIR, UGC and AICTE and University of Delhi. This also provides the basic
infrastructure to support the Ph.D. Program of the Department. Students interested in pursuing
research work leading to the Ph.D. degree can identify a research area in consultation with any
teacher of the department and apply for Ph.D. registration in the Department on a prescribed form
at any time of the year. The Board of Research Studies of the Faculty of Interdisciplinary and
Applied Sciences approves the registrations recommended by the Department in its meetings held
three to four times in a year. The major areas of research are shown in the schematic below:
Microwaves
Antenna
Microwave
Integrated
Circuits
Optical
Electronics
Photonics
Laser
Interaction
With Matter
Design &
Modelling Optical
Fiber &
Waveguides
Semiconductors
Devices &
Materials
Photovoltaics
p, n - ZnO
LED - Organic
Semiconductors
Device
Modelling
& VLSI
InP
HEMT &
OPFET
Si & GaAs
MESFET &
MOSFET
SiC
Computer
Aided
Design
Testing
Measurement
Conjugated
Polymers,
Nano-materials
High Temp.
& High Power
Devices
7
Ph. D. theses completed during (2008 -2013)
S. No.
Namer of the student
Topic of Ph D Theses
1.
Dr. Neha Katyal
Investigation of wave mixing in photorefractive materials
(Sillenites)
2.
Mr. Servin Rathi
Modeling, Simulation and Characterization of double gate
high electron Mobility Transistor (MEMT) for high power
and high frequency Applications with two separate/common
modified defferent- metal- insulator geometric control
3.
Dr. Priyanka Malik
Analytical modeling and simulation of gate dielectric and
gate material engineered recessed gate trapezoidal MOSFET
in sub-100nm region.
4.
Mr. Paramjeet Singh
Analysis of Multilayer Lossy Iso/Anisotropic CPW Like
Transmission Lines Using Integrated SDA and SLR
Methods
5.
Dr. Devinder Madhwal
Development of Conducting Polymer Based White Light
Emitting Diode
6.
Mr. Sachin Kumar
Sharma
Analytical Modeling and Simulation of Modulation doped
field effect transistors
7.
Mr. Avneesh Mittal
Genetic algoritum based adaptive control systems
8.
Mr. Ajay Pratap Singh
Theoretical Investigation of optical and transport properties
of quantum OOTS in the kondo regime
9.
Ms. Neha khanna
Dye Sensitised Solar C & U
10.
Ms. Pujarini Ghosh
Analytical Modeling and Simulation Of Dual Material Gate
Stack Architecture Cylindrical/Surrounded Gate MOSFETs.
11.
Ms. Shikha Madan
Optical and Electrical characterization of 11-VI compound
semiconductors quantum dots
12.
Ms. Monika
Bhattacharya
Modeling, Simulation and Characterization of Noise in
InAlAs/InGaAs Tied-geometry Double-gate High Electron
Mobility Transistor for Millimeter-wave Applications
13.
Ms. Rajni Gautam
Analytical Modeling and Simulation of Cylindrical Gate All
Around MOSFET- Reliability and Sensor Application
14.
Ms. Neetu Singh
Dye Sensitised Solar Cell
15.
Ms. Renu Guliani
Theoretical Modeling and parameter extraction oof dye
8
sensitized solar cell
16.
Mr. Y. Premkumar
Singh
Theoretical Study of Absorption Enhancement in Silicon
Substrate using Plasmonic Nanostructures for Photovoltaic
Devices
17.
Mr. Anil kumar
Study of Surface Plasmon and Lossy Mode Resonances in
Optical Waveguides and their application
List of Ph.D research under progress with expected dates of completion:
S.No
Name of student
Supervisor
Date of
registration
Expected date of
completion
1. Ms Jyoti Bansal
Prof. P.K. Bhatnagar July 2009
2014 (Thesis Submitted)
2. Ms. Nainu Priya
Chaudhari
3. Ms. Rakhi Narang
Prof. A.K. Verma
2009
2014 (Thesis Submitted)
Prof. Mridula Gupta
January 2010
2014 (Thesis Submitted)
4. Ms. Vandana Kumari
Prof. Mridula Gupta
Dr. Manoj Saxena
Prof. P.K. Bhatnagar
Dr. P. Koteswara
Rao
January 2010
2014 (Thesis Submitted)
January 2014
January 2018
6. Joginder Singh
Prof. P.K. Bhatnagar
Dr. P. Koteswara
Rao
January 2014
January 2018
7. Varun Singh Nirwal
Prof. P.K. Bhatnagar
Dr. P. Koteswara
Rao
January 2014
January 2018
8. Niharika Kohli
Prof. E. K. Sharma
November
2011
2015
9. Shivani Sital
Prof. E. K. Sharma
May 2011
2015
10. Raghvendra Tomar
Prof. E. K. Sharma
May 2011
2015
11. Anjli Baliyan
Prof. E. K. Sharma
November
2011
2015
12. Y. Prem Kumar Y
Prof. Avinashi
Kapoor
2011
2014
13. S. Chaudhary
Prof. Avinashi
2011
2014
5. Khyati Gautam
9
Kapoor
14. Davinder Kaur
Prof. Avinashi
Kapoor
2012
2016
15. S. Sharma
Prof. Avinashi
Kapoor
2012
2016
16. N. Gautam
Prof. Avinashi
Kapoor
2013
2017
17. Sugandha Sharma
Prof. Avinashi
Kapoor
2014
2018
18. Basant Saini
Prof. Avinashi
Kapoor
2014
2018
19. Poonam Shokeen
Prof. Avinashi
Kapoor
2014
2018
20. Yogesh Kumar
Prof. Mridula Gupta
2011
2014
21. Jayhind Kumar
Verma
22. Upasana Kardam
Prof. Mridula Gupta
April 2013
2017
Prof. Mridula Gupta
April 2013
2017
23. Sachin Tawra
Prof. Mridula Gupta
July 2013
2017
24. Ajay Singh
Prof. Mridula Gupta
July 2013
2017
10
Significant Publications of the faculty during 2008-2013
Prof. P. K. Bhatnagar
1. Optical Absorption Spectrum of Single Walled Carbon Nanotubes Dispersed in Sodium Cholate
and Sodium Dodecyl Sulfate, Inderpreet Singh, P.K.Bhatnagar, P.C.Mathur, L.M.Bharadwaj,
Journal of Material Research, Vol. 23, p632-636, 2008.
2. Development of Low Size Dispersion, High Volume Fraction and Strong Quantum confined
CdSxSe1-x Quantum Dots Embedded in Borosilicate Glass Matrix and Study of their Optical
Properties, A. Verma, P. K. Bhatnagar, P. C. Mathur, S. Nagpal, P. K. Pandey and J. Kumar,
Advanced Materials Research, 31, p 161-163, 2008.
3. A New FRET Based Sensitive DNA Sensor for Medical Diagnostics using PNA Probe and
Water Soluble Blue Light Emitting Polymer. Nidhi Mathur, Anamika Aneja, P.K.Bhatnagar and
P.C.Mathur. 2008, Accepted in Journal of Sensors. Volume 2008, Article ID 270475, 6 pages
(2008) doi:10.1155/2008/270475
4. Triple-FRET Technique for Energy Transfer Between Conjugated Polymer and TAMRA Dye
with Possible Applications in Medical Diagnostics. Anamika Aneja, Nidhi Mathur, P.K.Bhatnagar
and P.C.Mathur. 2008, Journal of Biological Physics.vol34 p487-493 (2008)
5. Growth Dynamics of II-VI Compound Semiconductor Quantum Dots Embeded in Borosilicate
Glass matrix by A.Verma, P.K.Pandey, J.Kumar, S.Nagpal, P.K.Bhatnagar and P.C.Mathur,
International Journal of Nanoscience, Vol7, p151-160, June (2008)
6. Two-Photon absorption in Quantum Dots of CdSxSe1-x using open aperture Z- scan and
Femto-second laser, Jitender Kumar, A. Verma, P. K. Pandey, P. K. Bhatnagar, P. C. Mathur, M.
Bhatnagar, W. Liu and S.H.Tang NANO: brief reports and reviews (world science Net.), Vol 4, 2329, 2009.
7. Compositional Effect on the Optical Absorption and Photoluminescence of CdSXSe1XQuantum Dots Embedded in Borosilicate Glasses, Jitender Kumar, A. Verma, P. K. Pandey, P. K.
Bhatnagar, P. C. Mathur, M. Bhatnagar, W. Liu and S.H.Tang International Journal of
Nanosciences, (Accepted, 1 Feb 2009).
8. Study of optical absorption and Photoluminescence of Quantum Dots of CdS formed in
Borosilicate Glass matrix, Jitender Kumar, A. Verma, P. K. Pandey, P. K. Bhatnagar, P. C. Mathur,
W. Liu and S.H.Tang Physica Scripta (April ,2009)
9. Optical and electrical characterization of conducting polymer-single walled carbon nanotube
composite films. Inderpreet Singh, P.K. Bhatnagar, P.C. Mathur, I. Kaur, L.M. Bharadwaj, R.
Pandey. Carbon, Vol. 46, Issue 8, pp 1141-1144, July 2008.
10. Study of photoluminescence quenching and DC conductivity measurements in polymer-SWNT
composite films for various SWNT concentrations. Inderpreet Singh, P.K. Bhatnagar, P.C. Mathur,
I. Kaur, L.M. Bharadwaj, R. Pandey. In special issue of International Journal of Nanotechnology
2009.
11
11. Development and characterization of an efficient bio-white polymer light-emitting diode with
red and green phosphorescent dyes as dopants Devinder Madhwal, S. S. Rait, A. Kumar, A. Verma,
K. Tada, M. Onoda, P. K. Bhatnagar and P. C. Mathur Journal of Materials Science Volume 45,
Number 12, 3300-3303, DOI: 10.1007/s10853-010-4343-5 (2010)
12.Increased luminance of MEH–PPV and PFO based PLEDs by using salmon DNA as an
electron blocking layer”. Devinder Madhwal, S.S. Rait, A. Verma, Amit Kumar, P.K.Bhatnagar,
P.C.Mathur, M.Onoda. Journal of Luminescence 130 (2010) 331– 333.
13.The effect of cadmium vacancies on the optical properties of chemically prepared CdS quantum
dots by Shikha Madan, Jitender Kumar, Inderpreet Singh, Devinder Madhwal, P K Bhatnagar and
P C Mathur Phys. Scr. 82 045702 doi:10.1088/0031- 8949/82/04/045702 (2010).
14. Enhanced luminance of MEH-PPV based PLEDs using single walled carbon nanotube
composite as an electron transporting layer by Inderpreet Singh, A. Verma, A.Kumar, S. Rait, I.
Kaur, L.M. Bharadwaj, C.S. Bhatia, P.K. Bhatnagar, P.C. Mathur Journal of Luminescence
Volume 130, Issue 11, November 2010, Pages 2157–2160
15. Self-trapping mechanism in green phosphorescent dye-doped polymer light-emitting diodes,
Devinder Madhwal, S S Rait, A Verma, A Kumar, M Onoda, P. K Bhatnagar and P C Mathur,
Physica Scripta Volume 81, 065701 doi:10.1088/0031- 8949/81/06/065701 (2010)
16. A Nano-Biosensor for DNA Sequence Detection Using Absorption Spectra of SWNT-DNA
Composite by J. Bansal, I. Singh, N. Mathur, A. Aneja, P.K. Bhatnagar, P.C. Mathur J. NanoElectron. Phys. 3 (2011) No1, P. 776-782
17. Vinamrita Singh, Swati Arora, P. K. Bhatnagar, Manoj Arora, and R. P. Tandon, Effects of
aging on the mobility and lifetime of carriersin organic bulk heterojunction solar cells, Journal of
Renewable and Sustainable Energy 3, 063111 (2011) DOI:10.1063/1.3670411
18. Vinamrita Singh,Swati Arora, Pramod Kumar Bhatnagar, Manoj Arora , Ram Pal Tandon, An
anomalous behaviour in degraded bulk heterojunction organic solar cells, Accepted for publication
in Physica Scripta-2011
19. Swati Arora, Satish Kumar Rajouria, Pankaj Kumar, P K Bhatnagar, Manoj Arora and R P
Tandon, Role of donor–acceptor domain formation and interface states in initial degradation of
P3HT:PCBM-based solar cells, Phys. Scr. 83 (2011) 035804, (6pp) doi:10.1088/00318949/83/03/035804
20. Effect of thermal annealing on the efficiency of poly (3-hexylthiphone):[6,6]-phenyl-C61butyric acid methyl ester bulk heterojunction solar cells by Inderpreet Singh, Devinder ,Madhwal,
Jitender Kumar, Pramod K. Bhatnagar, and Parmatma C. Mathur, Charanjit S. Bhatia Journal of
Nanophotonics, vol5,053504 (Apr 11, 2011); doi:10.1117/1.3565485
21. Increasing the luminous efficiency of an MEH-PPV based PLED using salmon DNA and single
walled carbon nanotube by Devinder Madhwal , Inderpreet Singh, Jitender Kumar, C.S. Bhatia,
P.K. Bhatnagar, P.C. Mathur Journal of Luminescence Volume 131, Issue 7, July 2011, Pages
1264–1266
12
22. Improvement in the luminous efficiency of MEH-PPV based light emitting diodes using zinc
oxide nanorods grown by the electrochemical deposition technique on ITO substrates Gupta,
Rohini B.; Kumar, Jitender; Madhwal, Devinder; Singh, Inderpreet; Kaur, I.; Bhardwaj, L. M.;
Nagpal, S.; Bhatnagar, P. K.; Mathur, P. C., Physica Scripta, Volume 84, Issue 1, pp. 015705
(2011).
23. Color tuning and improved performance of poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1, 4phenylenevinylene]-based polymer light emitting diode using cadmium selenide/zinc sulphide core
shell uncapped quantum dots as dopants by Shikha Madan, Jitender Kumar, Devinder Madhwal,
Inderpreet Singh, Pramod Kumar Bhatnagar, and Parmatma Chand Mathur ,J. Nanophoton. 5,
053518 (Aug 09, 2011); doi:10.1117/1.3604001
24.Ultraviolet electroluminescence from zinc oxide nanorods/deoxyribonucleic acid hybrid bio light-
emitting diode by Gupta Rohini Bhardwaj; Nagpal Swati; Arora Swati; Bhatnagar Pramod Kumar;
Mathur Parmatma Chandra , J. Nanophoton. 5, 059505 (2011)
25. Characterisation of CdSeXS1-X Quantum Dots Using XRD, UV-VIS Absorption and Raman
Spectroscopy Measurements by Jitender Kumar, Inderpreet Singh, Shikha Madan ,Devinder
Madhwal, P K Bhatnagar and P C Mathur,International Journal of Nanoscience , Accepted for
publication, Jan 2012
26. Bulk heterojunction formation with induced concentration gradient from a bilayer structure of
P3HT:CdSe/ZnS quantum dots using inter-diffusion process for developing high efficiency solar
cell” by Shiv Kumar Dixit, Shikha Madan, Devinder Madhwal, Jitender Kumar, Inderpreet Singh,
C.S. Bhatia, P.K.Bhatnagar, P.C.Mathur Organic Electronics Vol. 13, Page 710-15, Jan. 2012.
27. A Environment friendly highly sensitive Ethanol vapor sensor based on
Polymethylethacrylate: Functionalized-Multiwall Carbon Nanotubes Composite. Amandeep Kaur,
Inderpreet Singh, Jitender Kumar, Devinder Madhwal, P. K. Bhatnagar, P. C. Mathur, C. A.
Bernardo and M. C. Paiva Advanced Science and Engineering Medicine 5 1–5, 2013.
28. Bulk heterojunction formation with induced concentration gradient from a bilayer structure of
P3HT:CdSe/ZnS quantum dots using inter-diffusion process for developing high efficiency solar
cell. Shiv Kumar Dixit , Shikha Madan, Devinder Madhwal , Jitender Kumar, Inderpreet Singh,
C.S. Bhatia, P.K. Bhatnagar, P.C. Mathur. Organic Electronics 13 (2012) 710–714.
29. Enhancement of efficiency of a conducting polymer P3HT: CdSe/ZnS quantum dots hybrid
solar cell by adding single walled carbon nanotube for transporting photogenerated electrons. S.K.
Dixit, S. Madan, A. Kaur, D. Madhwal, I. Singh, P. K. Bhatnagar, P. C. Mathur, C. S. Bhatia,
Journal of Renewable and Sustainable Energy, 5 (2013) 033107.
30. J. Bansal, I. Singh, P.K. Bhatnagar, P.C. Mathur “DNA Sequence detection based on Raman
Spectroscopy using Single Walled Carbon Nanotube” Published in J of Bioscience and
Bioengineering, 2013 Apr,115(4),438-41
13
Prof. Enakshi K. Sharma
1. Analysis Of Cladding Modes In An Asymmetric Dual-Core Fiber, Florence Chan, K. Yasumoto
and Enakshi K. Sharma, Microwave and Optical Technology Letters(USA) 51, 507-510 (2009).
2. Er-LiNbo3 Waveguide: Field Approximation for Simplified Gain Calculations in DWDM
Application, Geetika Jain, Amita Kapoor and Enakshi K. Sharma, Journal of Optical Society of
America B (USA) 26, 633-639 (2009).
3. Analysis of Transmission Characteristics of Long Period Gratings in Tapered Optical Fibers,
K.C. Patra, Rashmi Singh, Enakshi K. Sharma and K. Yasumoto, Applied Optics(USA) ,48, G95G100 (2009).
4. Long Period Grating Refractive Index Sensor: optimal design for single wavelength
interrogation, Amita Kapoor and Enakshi K. Sharma, Applied Optics(USA) , 48, G88-G94 (2009).
5. Power exchange in strongly coupled diffused channel waveguide arrays: an analytical approach,
KC Patra, S Srivastava and Enakshi Khular Sharma, J. Optics (UK), 12, 1-8, (2010)
6. Saturation characteristics of InGaAsP-InP bulk SOA, Amita Kapoor, Enakshi K Sharma,
Wolfgang Freude and Juerg Leuthold, Proc. of SPIE (USA), 7597, (2010).
7. Numerical calculation based study of spectral anomalies and their applications in modified
Mach-Zehnder interferometer, Nandan S. Bist, B.K. Yadav, Bhaskar Kanseri, H.C. Kandpal and
Enakshi K. Sharma, Optik (Germany), 121, 581-587, (2010).
8. The influence of source and object characteristics on coincidence imaging , Nandan S. Bist,
Enakshi K. Sharma and H.C. Kandpal, J. Opt.(UK), 12, 045701 (6pp), (2010).
9. Exprimental observation of lensless ghost imaging by measuring reflected photons, Nandan S.
Bist, Enakshi K. Sharma and H.C. Kandpal, Optics and Lasers in Engineering(UK), 48, 671-675,
(2010).
10. Effects of thermal light source properties in two-photon subwavelength coincidence
interference experiments, Nandan S. Bist, Enakshi K. Sharma and H.C. Kandpal, Optik (Germany),
122, 128-132, (2011).
11. Study of the Amplification Characteristics of a Coaxial EDF with varying coupling conditions,
Jyoti Anand, Jagneet Kaur Anand and Enakshi K. Sharma, Optics and Laser Technology (UK), 44,
688-695, (2012).
12. Design and Modeling of Titanium Indiffused LiNbO3 Waveguides for Optimum Coupling to
Communication Grade Fiber, Geetika Jain and Enakshi K. Sharma, Journal of Computational and
Theoretical Nanoscience (Germany),10, 1326-1334 (2013).
13. Inherent Gain Flattening due to Two Mode Interference in Erbium Doped Coaxial Fibers, Jyoti
Anand, Jagneet Kaur Anand and Enakshi Khular Sharma, Optical Fiber Technology, 19, 298-303
(2013).
14
14. Coupled Mode Analysis for Simplified Gain Calculations in Erbium Doped Coaxial Fibers,
Jyoti Anand, Jagneet Kaur Anand and Enakshi Khular Sharma,, J. Optical Soc. Of America B, 30,
1496-1502 (2013)
15. Surface Plasmon Resonance based Fiber Optic Sensor for the Detection of Ttriglycerides using
Gel Entrapment Technique, Anjli Baliyan, Priya Bhatia, B.D.Gupta, Enakshi K Sharma, Arti
Kumari and Rani Gupta, Sensors and Actuators B, 188, 917-922 (2013)
15
Prof. A. K. Verma
1. Nasimuddin, Esselle Karu and Verma A. K. .2007. Wideband Circularly Polarized Stacked
Microstrip Antennas. IEEE Antennas and Wireless Propagation Letters, Vol. 6: 21-24
2.
Nasimuddin, Esselle Karu and Verma A. K. .2007. Optimizing the Coaxial-Feed Location
to Enhance Circular Polarization Bandwidth of Stacked Microstrip Antennas. Microwave
and Optical Tech. Letters, Vol. 49, No. 1, January : pp. 132-135.
3.
Nasimuddin, Esselle Karu and Verma A. K. .2008. Wideband High-Gain Circularly
Polarized Stacked Microstrip Antennas with an Optimized C-Type Feed and a Short Horn.
IEEE Transactions on Antennas and Propagation, Vol 56, No. 2,February: 578-581.
4.
Verma A. K., Singh Himanshu. 2009. Circuit Model of Microstrip Step Discontinuity”,
International Journal of Microwave and Optical Technology, Vol. 4, No. 2, March: 76-82.
5. Verma A. K., Awasthi Y.K., Singh Himanshu. 2009. Closed-form Model of W/hDependent Equivalent Isotropic Relative Permittivity of Microstrip on Multilayer
Anisotropic Substrate. International Journal of Microwave and Optical Technology, Vol. 4,
No. 2, March: 107-114.
6. Singh Himanshu, Verma A. K., Awasthi Y.K. .2009. Circuit model of multilayer microstrip
step discontinuity using SLR formulation”, International Journal of Electromagnetics, Vol.
29, No. 6, July: 483-498.
7.
Verma A. K., Awasthi Y.K., Singh Himanshu. 2009. Equivalent Isotropic Relative
Permittivity of Microstrip on Multilayer Anisotropic Substrate. International Journal of
Electronics, Vol. 96, No .8, August: 865-875.
8. . Awasthi Y.K., Singh Himanshu, Kumar A., Singh P., Verma A. K. . 2009. Accurate
CAD-Model Analysis of Multilayer Microstrip Line on Anisotropic Substrate. Journal of
Infrared, Millimeter, and Terahertz Waves, 16 October.
9.
P. Majumdar and A.K. Verma, “Closed-form Dispersion Models for Propagation
Characteristics of Slot-line in Lossy Media with Conductor Thickness,” International
Journal of Microwave and Optical Technology, Vol.4,No.2, pp-83-89, March 2009.
10. Majumdar,P , Verma A. K.. 2010. Accurate Closed- form Model for Computation of
Conductor Loss of Coplanar Waveguide,” International Journal of RF and Microwave
Computer-Aided Engineering, vol. 20, no.1January ,6-14.
11. Majumdar,P , Verma A. K.. 2010. Modified Closed-form Dispersion and Losses Models of
Slot-Line with Conductor Thickness,” International Journal of Infrared, Millimeter and
Terahertz Waves, vol. 31, no.3, March: 271-287.
12. Y. Ranga, Karu. P. Esselle and A. K Verma, “ Planar-Monopole-Fed, Surface-Mounted
Quasi- TEM Horn Antenna for UWB Systems”, IEEE Trans Antenna and Prop. vol 58,
no.7 pp.2436-2439, July, 2010.
13. Payal Majumdar and A.K. Verma, “Accurate CAD Model of Stopping Distance to
Compute Conductor Loss of CPW,” International Journal of Electronics and
16
Communications, AËU, Vol.64, pp.1157-1166, December 2010.
14. Y. Ranga, Karu. P. Esselle, A. Weily and A. K Verma, “A constant gain printed circular
monopole antenna for UWB applications”, Microwave and Optical Technology Letters, vol.
52, no. 6, June 2010, Pages: 1261-1264.
15. Y. Ranga, Karu. P. Esselle and Andrew R. Weily, “Compact Ultra-Wideband CPW-Fed
PrintedSemicircular Slot Antenna,” Microwave and Optical Technology Letters, vol. 52, no.
10, October 2010, Pages: 2367-2372.
16. Payal Majumdar and A.K. Verma, “CAD Models of Losses for Symmetric Elliptical and
Circular Cylindrical Coplanar Strip Lines,” Int. Journal of Electronics, Vol. 98, No. 7, pp.
863-882, July 2011.
17. Payal Majumdar and A.K. Verma, “Integrated Closed-form model and Circuit Model of
Lossy Slot line,” IET Microwaves, Antennas & Propagation, Vo.5, No.14, 2011, pp.17631773.
18. A.K.Verma and Ashwani Kumar ,”Synthesis of Microstrip Lowpass Filter Using Defected
Ground Structures” IET Microwaves, Antennas & Propagation, 2011.
19. Payal Majumdar and A.K. Verma, “CAD Models of Losses for Symmetric Elliptical and
Circular Cylindrical Coplanar Strip Lines,” Int. Journal of Electronics, Vol. 98, No. 7, pp.
863-882, July 2011.
20. Payal Majumdar and A.K. Verma, “Integrated Closed-form model and Circuit Model of
Lossy Slot line,” IET Microwaves, Antennas & Propagation, vol. 5 ,No. 14 November 18
2011, pp. 1763-1772 .
21. A.K.Verma, Ashwani Kumar “Design of Low Pass Filters using Some Defected Ground
Structures”, International Journal of Electronics and Communications Elsevier, Volume 65,
Issue 10, Pages 864-872, October 2011.
22. A.K.Verma, Ashwani Kumar, “Synthesis of Microstrip Low pass Filter Using Defected
Ground Structures”, IET Microwaves, Antennas & Propagation, Volume: 5 Issue:12,
page(s): 1431 - 1439. September 16 2011.
23. Anand K. Verma, ,Adel Abdel-Rahman, Ashwani Kumar , Nainu P. Chaudhari, Atallah
Balalem and Abbas Omar, "New Compact Dual-Band Bandstop Filter" International
Journal of Electronics,Taylor & Francis.
24. A. K. Verma, Paramjeet Singh, “Loss Computation of Multilayer Coplanar Waveguide
using Single Layer Reduction Method”, International Journal of Electromagnetics and
Applications (IJEA), Vol. 2, No. 6, November 2012, pp. 174-181.
25. A.. K. Verma, Paramjeet Singh, Ritu Bansal, “Computation of Static and Frequency
Dependent Line Parameters of Multilayer CPW using Static SDA and Single Layer
Reduction Method”, International Journal of RF and Microwave Computer-Aided
Engineering, (Accepted).
26. A. K. Verma, Paramjeet Singh, Ritu Bansal, “Modeling for Dispersion and Losses of
17
Multilayer Asymmetric CPW on Iso/Anisotropic Substrate”, Progress In Electromagnetics
Research B (PIER-B), Vol. 48, February 2013, pp. 395-419.
27. Anand K. Verma, Nainu P. Chaudhari, and Ashwani Kumar, „High Performance
Microstrip Transverse Resonance Lowpass Filter”, Microwave Optical Tech. Letters, Vol.
55, May 2013.
28. Anand K. Verma, Nainu P. Chaudhari, and Ashwani Kumar, “ Improved performance step
impedance lowpass filter”, Int. J. Electron. Commun. (AEÜ) 67 (2013) 754– 760
18
Prof. A. K. Kapoor
1. Single layer Homogeneous model for surface roughness by polarized light scattering,
Udaibir Singh and Avinashi Kapoor, Optics and Laser Technology, Volume 40, Issue 2, Pages
315-324,
March
2008
2. Effect of S and P Polarization on single layer Homogeneous model, Udaibir Singh and
Avinashi
Kapoor,
Proc.
of
SPIE,
6720,
Art.
No.
67201R,
2008
3. Consistency and Variations in optical characteristics of four-layer polymeric waveguides,
Rajesh Kumar, Amit Pratap Singh, Avinashi Kapoor, K.N. Tripathi, Optik, 119(12), 553-558,
2008.
4. Effects of deposition temperature on the structural and morphological properties of thin
ZnO films fabricated by pulsed laser deposition”, Rakhi Khandelwal, Amit P Singh, Avinashi
Kapoor,
Sorin
Grigorescu, Paola Miglietta, Nadya E Stankova and Alessio Perrone, Optics and Laser
Technology,
Volume
40,
Issue
2,
Pages
247-251,
2008.
5. Effects of deposition temperature on the structural and morphological properties of SnO2
films fabricated by pulsed laser deposition”, Rakhi Khandelwal, Amit P Singh, Avinashi
Kapoor,
Sorin
Grigorescu, Paola Miglietta, Nadya E Stankova and Alessio Perrone, Optics and Laser
Technology, Volume 41, Issue 1, Pages 89-93, 2009
6. Quantum Dot Solar Cell: An Overview Partha Goswami, Garima Puneyani, Naorem
Santakrus Singh and Avinashi Kapoor, Published in Research Signpost review book "Applied
Physics in the 21st
Century",
2008,
159-183.
7. Extraction of parameters of a real solar cell-A review article”, Amit Jain and Avinashi
Kapoor,
Published in Research Signpost review book "Applied Physics in the 21st
Century",
2008,
131-158.
8. Inducement of spin-pairing and correlated semi-metallic state in Mott-Hubbard quantum dot
array, Partha Goswami and Avinashi Kapoor, Physica E, Volume 41, Pages 379-386, 2009.
9. Tuning of PID Parameters Using Artificial Neural Network, Nisha, Avneesh Mittal ,
O.P.Sharma , Nitu Dhyani, Vijay Sharma, Avinashi Kapoor and T.K. Saxena, 2009, IEEEXplore,
pp
309-312.
10. Determination of the solar cell junction ideality factor using special tans function theory
(STFT), N. Santakrus Singh, Amit Jain, Avinashi Kapoor, Solar Energy Materials & Solar
Cells,
Volume
3(2009),
1423-1426.
11. Influence of pump beam Polarization on signal beam in photorefractive crystal in TWM :
transmission geometry”, Neha Katyal, Natasha, Amitava Roy, Avinashi Kapoor, Optik, 2010.
19
12. Investigation of transmittance property of Palladium thin film fabricated by pulsed laser
deposition with polarization using single layer model, Udaibir Singh, Nisha Jha, Tikendra
Prakash
Singh,
Avinashi
Kapoor and Alessio Perrone, Optics and Laser Technology, 42 (2010)1128-1133
13. Designing & Development of Static System for controlling temperature using NNPID,
Nisha Jha, Udaibir Singh, Avinashi Kapoor, Sajosps, 2010 , vol. 11, No. 1, 127-131.
14. High extinction ratio metal–insulator–semiconductor waveguide surface plasmon polariton
polarizer
V.K. Sharma, Anil Kumar, Avinashi Kapoor, Optics Communications Vol.284 pp.1815-1821,
2011
15. Modeling of Dye Sensitized Solar Cells, Neetu Singh, R.M. Mehra, Avinashi
Kapoor, Invertis Journal of Renewable Energy Vol. 1, No. 1, 2011, pp. 51-61
16. Optimal Design of Neural Fuzzy Inference Network for Temperature Control, Nisha Jha,
Udaibir Singh, T.K. Saxena and Avinashi Kapoor, Journal of Applied Sciences, 2011.
17. Online Adaptive Control for Non Linear Processes under influence of External
Disturbance, Nisha Jha, Udaibir Singh, T.K. Saxena and Avinashi Kapoor, International
Journal of Artificial Intelligence and Expert System (IJAE), Vol. 2, Issue 2, pp. 36-46., 2011
18. Synthesis and characterization of ZnO nanoparticles, Neetu Singh, R.M. Mehra, Avinashi
Kapoor,
J. Nano- Electron. Phys. (JNEP), accepted 2011, Vol. 3, (2011) No1, P.132-139.
19. Analysis of surface and guided wave plasmon polariton modes in insulator–metal–
insulator planar plasmonic waveguides, V.K. Sharma, Anil Kumar, A. Kapoor, Optics
Communications,
Vol.285,pp.1123–1127,2012
20. Integrated optic TE/TM pass polarizers using resonant coupling between ITO thin film
lossy modes and dielectric waveguide modes, Anil Kumar, V.K. Sharma, D. Kumar, A.
Kapoor,
Accepted
for
publication
in
Optics
Communications,
2012
21. Disorder induced semiconductor to metal transition and modifications of grain boundaries
in nanocrystalline zinc oxide thin film, Fouran Singh, Babloo Chaudhary, Vinod Kumar, R. G.
Singh,
Sanjeev
Kumar,
J.
Appl.
Phys.,
2012,
112,
073101.
22. Genetic algorithm based incremental PID temperature controller for long dead time
nonlinear bath, Avneesh Mittal, Avinashi Kapoor, T. K. Saxena, IJESR June 2012, Volume2/Issue-6/Article
No-6/449-467.
23. Genetic algorithm based tuning of fixed bias PID controller for a nonlinear constant
20
temperature water bath under load disturbances, Avneesh Mittal, Avinashi Kapoor, T. K.
Saxena,
JASE
6-2,
2012,
96-109.
24. Enhancement in light coupling into silicon solar cells using low cost and earth abundant
aluminium nanoparticles, Y. Prem Kumar Singh, Amit Jain, A. Kapoor, International Journal
of
Engineering
and
Applied
Sciences,
Vol.
1,
2012,
86-90.
25. An exact analytical method for calculating the parameters of a real solar cell using special
trans function theory (STFT), IJRER, Jan 2013.
26. Enhancement in Optical Absorption of Plasmonic Solar Cells, Y. Premkumar Singh, Anil
Kumar, Amit Jain and A. Kapoor, The Open Renewable Energy Journal, Vol. 6, 2013, 1-6.
27. Role of film thickness on the properties of ZnO thin films grown by sol-gel method, Vinod
Kumar, Neetu Singh, R. M. Mehra, Avinashi Kapoor and L. P. Purohit, H.C. Swart, Thin
Solid
Films
(2013),
Elsevier
28. Genetic Algorithm based Neuro Fuzzy Tuning of PID Controller for a Nonlinear
Temperature Water Bath with Feedforward Control, Avneesh Mittal, Priyanka Jain, Avinashi
Kapoor, T. K. Saxena, IEEE Xplore: 978-1-4799-1441-8/13/$31.00 ©2013 IEEE, pp:34-38.
29. High efficiency hybrid solid state blended dyes sensitized solar cell based on zinc oxide
nanostructures, R. G. Singh, Naina Gautam, Subodh K. Gautam, Vinod Kumar and A. Kapoor,
Journal of Renewable and Sustainable Energy, Vol. 5, 2013, 033134- 1-8
30.Adaptive
Tuning
of
PID
Controller
for
a
Nonlinear
Temperature
Water
Bath
under
Set
Point
Disturbances
using
Avneesh
Mittal,
Avinashi
Kapoor,
T.
K.
J. Automation & Systems Engineering (Communicated)
Constant
GANFC
Saxena
21
Prof. Mridula Gupta
1.
Temperature dependent analytical model of sub-micron GaN MESFETs for
microwave frequency applications, Sneha Kabra, Harsupreet Kaur, Subhasis
Haldar, Mridula Gupta and R.S. Gupta, Solid State Electronics, Vol. 52, Pp. 2530, 2008.
2.
Multi-material gate poly-crystalline thin film transistors: Modeling and
simulation for an improved gate transport efficiency, version 3
Amit Sehgal, Tina Mangla, Mridula Gupta, R. S. Gupta, Thin Solid Films, Vol.
No. 516, Pp. 2162-2170, 2008.
3.
Analytical Performance Evaluation of AlGaN/GaN Metal Insulator
Semiconductor Heterostructure Field Effect Transistor (MISHFET) and its
Comparison with Conventional HFETs for High Power Microwave
Applications, Ruchika Aggarwal, Anju Agrawal, Mridula Gupta and R.S.
Gupta, Microwave and Optical Technology Letters, Vol. 50, No. 2, P.331 – 338,
(February) 2008.
4.
Laterally amalgamated Dual Material Gate Concave (L-DUMGAC) MOSFET
for ULSI, Rishu Chaujar, Ravneet Kaur, Manoj Saxena, Mridula Gupta and
R.S. Gupta, Microelectronic Engineering, Vol. 85, Pp. 566 – 576, March 2008.
5.
Dual Material Double Layer Gate Stack SON MOSFET: A Novel Architecture
for enhanced analog performance – Part I Impact of Gate Metal Workfunction
Engineering, Poonam Kasturi, Manoj Saxena, Mridula Gupta and R.S. Gupta,
IEEE Transactions on Electron Devices, Vol. 55, No. 1, Pp. 372-381, 2002008
6.
Dual Material Double Layer Gate Stack SON MOSFET: A Novel Architecture
for enhanced analog performance – Part II Impact of Gate Dielectric Material
Engineering, Poonam Kasturi, Manoj Saxena, Mridula Gupta and R.S. Gupta,
IEEE Transactions on Electron Devices, Vol. 55, No. 1, Pp. 382-387, 2008.
7.
Two-dimensional analytical sub-threshold model of multi-layered
gate dielectric recessed channel (MLaG-RC) nanoscale MOSFET, Rishu
Chaujar, Ravneet Kaur, Manoj Saxena, Mridula Gupta and R.S. Gupta,
Semiconductor Science and Technology, Vol. 23, No. 4, (10pp), April 2008.
8.
Analytical modeling and simulation of subthreshold behavior in nanoscale dual
material gate AlGaN/GaN HEMT, Sona P. Kumar, Anju Agrawal, Rishu
Chaujar, Mridula Gupta and R.S. Gupta, Superlattices and Microstructures, Vol.
44, No. Pp. 37-53, July 2008.
9.
Graded Channel Architecture: the Solution for Misaligned DG FD SOI nMOSFETs, Rupendra Kumar Sharma, Ritesh Gupta, Mridula Gupta and R. S.
Gupta, Semiconductor Science and Technology, Vol. 23, No. 7, Pp., 075041,
2008.
10.
Intermodulation Distortion and Linearity Performance Assessment of 50-nm
gate length LDUMGAC MOSFET for RFIC Design, Rishu Chaujar, Ravneet
Kaur, Manoj Saxena, Mridula Gupta and R.S. Gupta, Superlattices and
Microstructures, Vol. 44, Pp.143-152, 2008.
22
11.
TCAD Assessment of Gate Electrode Workfunction Engineered Recessed
Channel (GEWE-RC) MOSFET and its Multi-Layered Gate Architecture: PartI: Hot Carrier Reliability Evaluation, Rishu Chaujar, Ravneet Kaur, Manoj
Saxena, Mridula Gupta and R.S. Gupta, IEEE Transactions on Electron Devices,
Vol. 55, No. 10, Pp. 2602-2613, 2008.
12.
On-State and RF Performance Investigation of Sub-50nm L-DUMGAC
MOSFET Design for High-Speed Logic and Switching Applications, Rishu
Chaujar, Ravneet Kaur, Manoj Saxena, Mridula Gupta and R.S. Gupta,
Semiconductor Science and Technology, Vol. 23, 095009 (8pp), 2008.
13.
Gate Dielectric Engineering of Quarter Sub Micron AlGaN/GaN MISHFET: A
New Device Architecture for Improved Transconductance and High Cut-off
Frequency, Ruchika Aggarwal, Anju Agrawal, Mridula Gupta and R.S. Gupta,
Solid State Electronics, Vol. 52, Pp. 1610-1614, 2008.
14.
Modeling and Analysis of Fully Strained and Partially Relaxed Lattice
Mismatched AlGaN/GaN HEMT for High Temperature Applications, Parvesh
Gangwani, Ravneet Kaur, Sujata Pandey, Subhasis Haldar, Mridula Gupta and
R.S. Gupta, Superlattices and Microstructures, Vol. 44, No. 6, Pp. 781-793, Dec.
2008.
15.
Two-dimensional threshold voltage model and design considerations for gate
electrode workfunction engineered recessed channel (GEWE-RC) nanoscale
MOSFET: part 1, Rishu Chaujar, Ravneet Kaur, Manoj Saxena, Mridula Gupta
and R.S. Gupta, Semiconductor Science and Technology, Vol. 23, 045006
(10pp), 2008.
16.
Two-Dimensional Analytical Subthreshold Model of Graded Channel DG FD
SOI n-MOSFET with Gate Misalignment Effect, Rupendra Kumar Sharma,
Mridula Gupta and R.S. Gupta, Superlattices and Microstructures, Vol. 45, Pp.
91-104, 2009.
17.
T-gate geometric (solution for submicrometer gate length) HEMT: Physical
analysis, modeling and implementation as parasitic elements and its usage as
dual gate for variable gain amplifiers, Ritesh Gupta, Servin Rathi, Ravneet Kaur,
Mridula Gupta, R.S. Gupta, Superlattices and Microstructures, Vol. 45, No. 3,
Pp. 105-116, 2009.
18.
Investigation of Multi-Layered-Gate Electode Workfunction Engineered
Recessed Channel (MLGEWE-RC) Sub-50nm MOSFET: A Novel Design,
Rishu Chaujar, Ravneet Kaur, Manoj Saxena, Mridula Gupta and R.S. Gupta,
International Journal of Numerical Modelling: Electronic Networks, Devices
and Fields, Vol. 22, No. 3, Pp. 259-278, May/June 2009.
19.
Dynamic Performance of Graded Channel DG FD SOI n-MOSFETs for
Minimizing the Gate Misalignment Effect, Rupendra Kumar Sharma, Mridula
Gupta and R.S. Gupta, Microelectronics Reliability, Vol. 49, No. 6, pp. 592-599,
June 2009.
20.
Dual-material double-gate SOI n-MOSFET: Gate misalignment analysis,
Rupendra Kumar Sharma, Ritesh Gupta, Mridula Gupta and R.S. Gupta, IEEE
Transactions on Electron Devices, Vol. 56, No. 6, 1284–1291, 2009.
23
21.
TCAD assessment of gate electrode workfunction engineered recessed channel
(GEWE-RC) MOSFET and its multi-layered gate architecture: Part II: Analog
and large signal performance evaluation, Rishu Chaujar, Ravneet Kaur, Manoj
Saxena, Mridula Gupta and R.S. Gupta, Superlattices and Microstructeres, Vol.
46, No. 4, Pp. 645-655, October 2009.
22.
Modeling of hetero-interface potential and threshold voltage for tied and
separate nanoscale InAlAs-InGaAs symmetric double-gate HEMT, Servin
Rathi, Jyotika Jogi, Mridula Gupta, R.S. Gupta, Microelectronics Reliability,
Vol. 49, pp. 1508-1514, 2009.
23.
Design considerations and impact of technological parametric variations on
RF/microwave performance of GEWE-RC MOSFET, Rishu Chaujar, Ravneet
Kaur, Manoj Saxena, Mridula Gupta and R.S. Gupta, Microwave and Optical
Technology Letters, Vol. 53, No. 3, P.652-657, 2010.
24.
Gate Material Engineered-Trapezoidal Recessed Channel MOSFET (GMETRC) for High Performance Analog and RF Applications, Priyanka Malik,
Sona P. Kumar, Rishu Chaujar, Mridula Gupta & R.S. Gupta, Microwave and
Optical Technology Letters, Vol. 53, No. 3, P.694-698, 2010.
25.
Metal Insulator Gate Geometric HEMT: Novel Attributes and Design
Consideration for High Speed Analog Applications, Ritesh Gupta, Ravneet
Kaur, Sandeep Kr Aggarwal, Mridula Gupta, and R. S. Gupta, Journal of
Semiconductor Technology and Science, Vol.10, No.1, 66-77, (March), 2010.
26.
Analytical modeling of Channel noise for Gate Material Engineered
Surrounded/Cylindrical Gate (SGT/CGT) MOSFET, Pujarini Ghosh, Rishu
Chaujar, Subhasis Haldar, R.S Gupta and Mridula Gupta, World Academy of
Science, Engineering and Technology No.40, 620-623, 2010.
27.
Two-dimensional Analytical Drain Current Model for Multilayered-Gate
Material Engineered Trapezoidal Recessed Channel (MLGME-TRC) MOSFET:
a Novel Design, Priyanka Malik, Rishu Chaujar, Mridula Gupta, R.S. Gupta,
World Academy of Science, Engineering and Technology vol. 40, pp. 472-476,
2010.
28.
Microwave performance enhancement in Double and Single Gate HEMT with
channel thickness variation. Ritesh Gupta, Servin Rathi, Mridula Gupta and R S
Gupta, Superlattice and Microstructures, Vol. 47, No. 6, P. 779-794, (June)
2010.
29.
An analytical charge-based drain current model for nanoscale In0.52Al0.48AsIn0.53Ga0.47 As separated double-gate HEMT, Servin Rathi, Jyotika Jogi, R.S.
Gupta and Mridula Gupta, Semiconductor Science and Technology, Vol. 25,
No.11, P. 115003-115009, (Oct) 2010.
30.
Physics Based Threshold voltage analysis of Gate Material Engineered
Trapezoidal Recessed Channel (GME TRC) Nanoscale MOSFET and its
Multilayered gate architecture, Priyanka Malik, Rishu Chaujar, Mridula Gupta
and R.S Gupta. International Journal of Microwave and Optical Technology,
Vol.5, No.6, P.361-368, (Nov) 2010.
24
31.
Device linearity and intermodulation distortion comparison of Dual Material
Gate and conventional AlGaN/GaN High Electron Mobility Transistor, Sona P
Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta and R.S. Gupta.
Microelectronics Reliability. Vol. 51, No.3, P. 587-596, (March) 2011.
32.
Improved Linearity Performance of AlGaN/GaN MISHFET over Conventional
HFETs: An Optimization Study for Wireless Infrastructure Applications,
Ruchika Aggarwal, Anju Agrawal, R.S Gupta. and Mridula Gupta. Superlattices
and Microstructures. Vol.50, No. 1, P.1-13, (July) 2011.
33.
Scattering parameter based Modeling and Simulation of symmetric tied-gate
InAlAs/InGaAs DG-HEMT for millimeter-wave applications, Monika
Bhattacharya, Jyotika Jogi, R.S Gupta and Mridula Gupta. Solid State
Electronics, Vol.63, No.1, P.149-153, (September) 2011.
34.
TCAD Assessment of Device Design Technologies for Enhanced Performance
of Nanoscale DG MOSFET, Rupendra Sharma, Mridula Gupta and R.S Gupta,
IEEE Trans. Electron Devices. Vol. 58, No. 9, P. 2936-2943, (September), 2011.
35.
Linearity-Distortion analysis of GME-TRC MOSFET for High Perfromance
and Wireless Applications, Priyanka Malik, R.S.Gupta, Rishu Chaujar and
Mridula Gupta, Journal of Semiconductor Technology and Science, P. 152-174,
(July) 2011.
36.
AC Analysis of nanoscale GME-TRC MOSFET for Microwave and RF
Applications, Priyanka Malik, R.S.Gupta, Rishu Chaujar and Mridula Gupta.
Microelectronic Reliability, Vol. 52, no. 1, pp. 151-158, (January) 2012.
37.
Impact of Interface Fixed Charges on the Performance of the Channel Material
Engineered Cylindrical Nanowire MOSFET, Rajni Gautam, Manoj Saxena, R.S.
Gupta , and Mridula Gupta, AIRCC journal (International journal of VLSI
design & Communication Systems VLSICS ), Vol. 1, No. 3, P. 225-241,
(September), 2011.
38.
Linearity and Analog Performance Analysis of Double Gate Tunnel Fet: Effect
of Temperature and Gate Stack, Rakhi Narang, Manoj Saxena, R. S. Gupta and
Mridula Gupta, International journal of VLSI design & Communication Systems
( VLSICS).,Vol. 2, No. 3, P.185-200, (September), 2011.
39.
An Analytical Drain Current Model for Dual Material Engineered
Cylindrical/Surrounded Gate MOSFET, Pujarini Ghosh, Subhasis Haldar, R.S.
Gupta, and Mridula Gupta, Microelectronics Journal Vol. 43, No. 1, pp.17-24,
2012.
40.
Dielectric Modulated Tunnel Field Effect Transistor – A Bio molecule Sensor,
Rakhi Narang, Manoj Saxena, R.S. Gupta, and Mridula Gupta, IEEE Electron
Device Letters, vol. 33, no. 2, pp. 266-268, Feb 2012.
41.
Two Dimensional Analytical Subthreshold Model of Nanoscale Cylindrical
Surrounding Gate MOSFET Including Impact of Localised Charges, Rajni
Gautam, Manoj Saxena, R.S.Gupta and Mridula Gupta, Journal of
computational and theoretical nanoscience, Vol.9, No.4, p.602-610. (April)
2012.
42.
Simulation Study of Insulated Shallow Extension Silicon On Nothing (ISESON)
25
MOSFET for High Temperature Applications, Vandana Kumari, Manoj Saxena,
R.S. Gupta, and Mridula Gupta, Microelectronics Reliability Vol.52, No.8,
pp.1610:1612 (August), 2012.
43.
Gate-Geometric Recessed Nano-scale In0.52Al0.48As-In0.53Ga0.47As
Double–Gate HEMT for High Breakdown, Servin Rathi, Mridula Gupta and R.
S. Gupta, IEEE Transaction on Device and Material Reliability Vol. 12, No. 1,
pp.139-145, 2012.
44.
Effect of Localised Charges on Nanoscale Cylindrical Surrounding Gate
MOSFET: Analog Performance and Linearity Analysis, Rajni Gautam, Manoj
Saxena, R.S.Gupta and Mridula Gupta, Microelectronics Reliability, vol. 52,
no.6, pp. 989-994, June 2012.
45.
Immunity against Temperature Variability and Bias point Invariability in
Double Gate Tunnel Field Effect Transistor, Rakhi Narang, Manoj Saxena, R.S.
Gupta, and Mridula Gupta, Microelectronics Reliability, Vol.52, No.8, pp.16171620. (August) 2012.
46.
Temperature Dependent Drain Current Model for Gate stack Insulated Shallow
Extension Silicon on Nothing (ISESON)MOSFET for wide operating
temperature range, Vandana Kumari, Manoj Saxena, R.S. Gupta, and Mridula
Gupta, Microelectronics Reliability. Vol. 52, no. 6, pp. 974–983, June 2012.
47.
Analog and Digital Performance Assessment of Empty Space in Double Gate
(ESDG) MOSFET: A Novel Device Architecture, Vandana Kumari, Manoj
Saxena, R.S. Gupta, and Mridula Gupta, Journal of computational and
theoretical nanoscience (JCTN), Vol. 10, no. 2, pp.389-398, 2013.
48.
An Accurate Charge-Control- Based Approach for Noise Performance
Assessment of a Symmetric Tied-Gate INAlAs/INGaAs DG HEMT, Monika
Bhattacharya, Jyotika Jogi, R.S Gupta and Mridula Gupta, IEEE Transactions on
Electron Devices, Vol. 59 , no. 6, pp. 1644 – 1652, June 2012
49.
Analytical Model for Double-Gate Tunneling Field-Effect Transistor (DGTFET) using carrier concentration approach, Rakhi Narang, Manoj Saxena,
R.S. Gupta, and Mridula Gupta, Journal of Computational and Theoretical
Nanoscience (JCTN). Vol. 10, no. 5, pp.1-7, 2013.
50.
Two dimensional analytical drain current model for Double Gate MOSFET
incorporating Dielectric Pocket (DP-DG), Vandana Kumari, Manoj Saxena, R.S.
Gupta, and Mridula Gupta, IEEE Transactions On Electron Devices, vol 59, no.
10, pp. 2567 - 2574, 2012.
51.
A Dielectric Modulated Tunnel FET based Biosensor for Label Free Detection:
Analytical Modeling Study and Sensitivity Analysis, Rakhi Narang, K. V. S.
Reddy, Manoj Saxena, R.S. Gupta, and Mridula Gupta, IEEE Transactions on
Electron Devices, vol. 59, no. 10, pp. 2809-2817, Oct 2012.
52.
An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET
for High Frequency Applications, Pujarini Ghosh, Subhasis Haldar, R.S.Gupta
and Mridula Gupta. Journal of Semiconductor Technology and Science, Vol. 12,
no. 4, pp. 377-387, 2012.
26
53.
Analytical Modeling and Simulation for Dual Metal Gate Stack Architecture
(DMGSA) Cylindrical/Surrounded Gate MOSFET, Pujarini Ghosh, Subhasis
Haldar, R.S.Gupta and Mridula Gupta. Journal of Semiconductor Technology
and Science, Vol. 12, no. 4, pp. 458-466, 2012.
54.
An Investigation of Linearity Performance and Intermodulation Distortion of
GME CGT MOSFET for RFIC Design, Pujarini Ghosh, Subhasis Haldar,
R.S.Gupta and Mridula Gupta, IEEE Transactions on Electron Devices, Vol. 59,
no.12, pp. 3263-3268, 2012.
55.
Numerical Model of Gate All Around MOSFET With Vacuum Gate Dielectric
For Biomolecule Detection, Rajni Gautam, Manoj Saxena, R.S.Gupta, and
Mridula Gupta, IEEE Electron Device Letters, vol.33, no.12, pp. 1756-1758,
2012.
56.
“Numerical analysis of localised charges impact on Static and Dynamic
Performance of Nanoscale Cylindrical Surrounding Gate MOSFET Based
CMOS Inverter”, Rajni Gautam, Manoj Saxena, R. S. Gupta, and Mridula
Gupta, Microelectronics Reliability, Vol. 53, Issue 2, Pages 236–244, 2013.
57.
Assessment of Ambipolar Behavior of a Tunnel FET and Influence of Structural
Modifications, Rakhi Narang, Manoj Saxena, R.S. Gupta, and Mridula Gupta,
Journal of Semiconductor Technology and Science, Vol. 12, no. 4, pp. 482-491,
2012.
58.
Investigation of Empty Space in Nanoscale Double Gate (ESDG) MOSFET for
High Speed Digital Circuit Applications, Vandana Kumari, Manoj Saxena, R.S.
Gupta, and Mridula Gupta, Journal of Semiconductor Technology and Science,
Vol. 13, no. 2, pp.127-138, 2013.
59.
Device and Circuit Level Performance Comparison of Tunnel FET Architectures
and Impact of Heterogeneous Gate Dielectric, R. Narang, M. Saxena, R. S. Gupta
and M. Gupta, Journal of Semiconductor Technology And Science, Vol. 13, no. 3,
pp. 224-236, 2013.
60.
Circuit Level Implementation for Insulated Shallow Extension Silicon On
Nothing (ISE-SON) MOSFET: A Novel Device Architecture, Vandana Kumari,
Manoj Saxena, R.S. Gupta, and Mridula Gupta, IETE Journal of Research, vol
59, no. 4, pp.353-359, 2013.
61.
Temperature Dependent Analytical Model for Microwave and Noise
Performance Characterization of In0.52Al0.48As/InmGa1-mAs (0.53 ≤ m ≤ 0.8)
DG -HEMT, Monika Bhattacharya, Jyotika Jogi, R.S Gupta and Mridula Gupta,
IEEE Transactions on Device and Material Reliability , Vol.13, No.1, pp.293300, 2013.
62.
Hot Carrier Reliability of Gate All Around MOSFET for RF/Microwave
Applications, Rajni Gautam, Manoj Saxena, R.S. Gupta, and Mridula Gupta,
IEEE Transactions on Device and Material Reliability, Vol. 13, no. 1, pp. 245 –
251, 2013.
63.
Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation
of InAlAs/InGaAs Double-gate HEMT, Monika Bhattacharya, Jyotika Jogi, R.S
27
Gupta and Mridula Gupta, Journal of Semiconductor Technology and Science,
Vol. 13, no.4, pp. 331-341, 2013.
64.
Gate All Around MOSFET with Vacuum Gate Dielectric for Improved Hot
Carrier Reliability and RF performance, Rajni Gautam, Manoj Saxena,
R.S.Gupta , and Mridula Gupta, IEEE Transactions on Electron Devices, Vol.
60, no.6, pp. 1820-1827, 2013.
65.
Drain current model for a gate all around GAA p-n-p-n TFET, R. Narang, M.
Saxena, R.S. Gupta, and M. Gupta, Microelectronics Journal, Vol. 44, no. 6, pp.
479-488, 2013.
66.
Analytical Modeling of Dielectric Pocket Double Gate (DP-DG) MOSFET
Incorporating Hot Carrier Induced Interface Charges, Vandana Kumari, Manoj
Saxena, R.S. Gupta, and Mridula Gupta, IEEE Transactions on Device and
Material Reliability, 2013.
67.
Analytical Model of Double Gate MOSFET for High Sensitivity Low Power
Photosensor, Rajni Gautam, Manoj Saxena, R.S.Gupta, and Mridula Gupta,
Journal of Semiconductor Technology and Science, Vol. 13, no.5, pp. 501-510,
2013.
68.
Performance Investigation of Insulated Shallow Extension Silicon On Nothing
(ISE-SON) MOSFET for Low Voltage Digital Applications, Vandana Kumari,
Manoj Saxena, R.S. Gupta, and Mridula Gupta, Journal of Semiconductor
Technology and Science, Vol. 13, no.6, pp. 622-634, 2013.
69.
Comparative Study of Silicon On Nothing and III-V On Nothing Architecture
for High Speed and Low Power Analog and RF/Digital Applications,Vandana
Kumari, Manoj Saxena, R.S. Gupta, and Mridula Gupta, IEEE Trans. On
Nanotechnology, Vol. 12, no. 6, pp. 978-984, 2013.
70.
Impact of Temperature variations on the Device and Circuit Performance of
Tunnel FET: A Simulation Study, Rakhi Narang, Manoj Saxena, R.S. Gupta,
and Mridula Gupta, IEEE Trans. On Nanotechnology, Vol. 12, no. 6, pp. 951957, 2013.
71.
Gate All Around MOSFET for Catalytic Metal Gate for Gas Sensing
application, Rajni Gautam, Manoj Saxena, R.S. Gupta, and Mridula Gupta,
IEEE Trans. On Nanotechnology, Vol. 12, no. 6, pp. 939-944, 2013.
72.
Impact of Temperature and Indium composition in the channel on the
Microwave performance of single-gate and double-gate InAlAs/InGaAs HEMT,
Monika Bhattacharya, Jyotika Jogi, R.S Gupta and Mridula Gupta, IEEE Trans.
On Nanotechnology, Vol. 12, no. 6, pp. 965-970, 2013.
73.
Temperature Dependent Subthreshold Model of Long Channel GAA MOSFET
Including Localized Charges to Study Variations in its Temperature Sensitivity,
Rajni Gautam, Manoj Saxena, R.S. Gupta, and Mridula Gupta, Microelectronics
Reliability, Vol. 54, no.1, pp. 37-43, 2013.
28
74.
Analytical Model of Double Gate MOSFET for High Sensitivity Low Power
Photosensor, Rajni Gautam, Manoj Saxena, R.S.Gupta, and Mridula Gupta,
Journal of Semiconductor Technology and Science, Vol. 13, no.5, pp. 501-510,
2013.
29
Dr Harsupreet Kaur
1. Harsupreet Kaur, Sneha Kabra, Subhasis Haldar, and R. S. Gupta, “An Analytical
Threshold Voltage Model for Graded Channel Asymmetric Gate Stack (GCASYMGAS)
Surrounding Gate MOSFET” Solid State Electronics, vol. 52, pp.305-311, 2008.
2. Temperature dependent analytical model of sub-micron GaN MESFETs for microwave
frequency applications” Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta
and R.S. Gupta, Solid State Electronics, Vol. 52, Pp. 25-30, 2008
3. Harsupreet Kaur, Sneha Kabra, Subhasis Haldar, and R. S. Gupta, “Impact of Laterally
Asymmetric Channel and Gate Stack Design on Device Performance of Surrounding Gate
MOSFETs : A Modeling and Simulation Study”, Vol. 52, no. 3, pp. 746-750, Microwave
and Optical Technology Letters”, 2010
Dr. P. Koteswara Rao
1. KoteswaraRaoPeta, Sang Tae Lee, Moon-Deock, Kim, Jae-Eung Oh, Song-Gang Kim
and Tae-Geun Kim, Deep level defects in Ga- and N- polarity GaN grown by molecular
beam epitaxy on Si(111), Journal of Crystal Growth, 378 (2013) 299-302.
2. KoteswaraRaoPeta, Byung-Guon Park, Sang-Tae Lee, Moon-Deock, Kim, Jae-Eung Oh,
and Tae-Geun Kim and V. Rajagopal Reddy, Analysis of electrical properties and deep
level defects in undopedGaNSchottky barrier diode, Thin Solid Films, 534 (2013) 603-608.
3. KoteswaraRaoPeta, Byungguon Park, Sang-Tae Lee, Moon-Deock, KimandJae-Eung
Oh, Temperature-dependent electrical properties of (Pt/Au)/Ga-polarity GaN/Si (111)
Schottky diode, Microelectronic Engineering,93 (2012) 100-104.
4. P. KoteswaraRao, Byungguon Park, Sang-Tae Lee, Young-Kyun Noh, Moon-Deock, Kim
and Jae-Eung Oh, Analysis of leakage current mechanisms in Pt/Au Schottky contact on Gapolarity GaN by Frenkel-Poole emission and deep level studies, Journal of Applied Physics
110, (2011) 013716
5. V.Rajagopal Reddy, M.Siva Pratap Reddy and P.KoteswaraRao, Effect of rapid thermal
annealing on deep level defects in the Si-doped GaN, Microelectronic Engineering, Vol. 87,
(2010) 117-121.
6. V.Rajagopal Reddy, M. Ravinandan, P.KoteswaraRao and Chel-Jong Choi, Effect of
thermal annealing on electrical and structural properties of Pt/Mo Schottky contact on n-type
GaN, Journal of Materials Science: Materials in Electronic, Vol. 20, (2009) 1018-1025.
7. M.Ravinandan, P.KoteswaraRao and V.Rajagopal Reddy, Analysis of current-voltage
characteristics of Pd/Au Schottky structure on n-type GaN in wide temperature range,
Semiconductor Science and Technology, Vol.24, (2009) 035004.
8. P.KoteswaraRaoand V.Rajagopal Reddy, Effect of annealing temperature on electrical and
structural properties oftransparent indium-tin-oxide electrode to n-type GaN, Materials
Chemistry and Physics, Vol. 45 (2009) 22-32.
30
9. M. Ravinandan, P.Koteswara Rao and V.Rajagopal Reddy, Temperature dependent of
curent-voltage (I-V) characteristics of Pt/Au Schottky contact on n-type GaN, Journal
ofOptoelectronics and Advanced Materials, Vol. 10 (2008) 2787-2792.
10. V.Rajagopal Reddy, M.Ravinandan, P.KoteswaraRao and Chel-Jong Choi, Electrical and
structural properties of rapidly annealed Pd/Mo Schottky contacts on n-type GaN,
Semiconductor Science and Technology, Vol.23 (2008) 095026.
11. P. KoteswaraRao andV.Rajagopal Reddy, Temperature-dependent electrical properties of Au
Schottky contact and deep level defects in n-type GaN, Optoelectronics and Advanced
Materials-Rapid Communication, Vol.2 (2008) 410-414.
12. V.Rajagopal Reddy and P.KoteswaraRao, Annealing temperature effect on electrical and
structural properties of Cu/Au Schottky contacts to n-type GaN, Microelectronic Engineering,
Vol. 85 (2008) 470-476.
31
h-index: (As per information received from Faculty)
Prof. P. K. Bhatnagar: 8
Prof. Enakshi K. Sharma: 6
Prof. A. K. Verma: 8
Prof. Avinashi Kapoor: 11
Prof. Mridula Gupta: 8
Dr. Harsupreet Kaur: 4
Mr. Kamlesh Patel: 2
Dr. P. Koteswara Rao: 5
Significant projects conducted by the faculty during 2008-2013
Prof. P. K. Bhatnagar
S.
No.
1.
Funding
agencies
DST
Project Title
Duration
Grant Received
Measurement of Optical NonLinearities in Wide BandgapII-VI
Semiconductor Quantum Dots Suitable
for All-Optical Switching Devices
2008-2011
Rs. 18 lakhs
2.
DST
Fabrication characterization and
enhancement of efficiency of
Conducting polymer DNA based white
light emitting diodes
2009-2012
Rs. 37.9536
lakhs
3.
DBT
Mutation Detection for Medical
Diagnostics using Fret Between
Cationic Conjugated Polymer and
Labelled PNA Probes
2010-2013
Rs. 54.094 lakhs
4.
DST- IJCSP
(Japan)
Fabrication and characterization of
Ultraviolet (300-400 nm) Light
Emitting Diodes Based on
Heterojunctions of Electrochemically
grown n-ZnO Nanorods and p-type
Organic Materials
2011-2013
Rs. 4.935 lakhs
5.
DSTPortugal
Development and Characterization of
Chemically functionalized Single and
Multi Walled Carbon Nanotube –
2011-2014
Rs. 4.312 lakhs
32
Thermoplastic Composites
6.
MNRE
Development and Characterization of a
Hybrid Structure: Salmon DNAConducting Polymer (P3HT) –
Quantum Dot (CdSe)- Carbon
Nanotube (SWNT) suitable for a Bio
Solar Cell with High Efficiency due to
Impact Ionization and Improved
Stability
2011-2014
Rs. 90.061 lakhs
7.
DBT
2012-2014
Development of an Accurate &
Reliable Biosensor Based on Raman
Scattering & Photoluminescence
Emission in Single Walled Carbon
Nanotubes for Medical Diagnostics and
Mutation Detection in Diseased DNA
Rs. 14.326 lakhs
8.
DST
Fabrication
characterization
and 2009-2012
enhancement
of
efficiency
of
Conducting polymer DNA based white
light emitting diodes
Rs. 37,95,360
Prof. Enakshi K. Sharma
S.
No.
1.
Funding
agencies
University
Grants
Commission
(UGC)
Project Title
Duration Grant Received
Coupled Mode Analysis for Design
and Simulation of Arrayed
Waveguides and
Coupled Waveguide Device
20112014
Rs.11,86,693
2.
University of
Delhi
Grants under the Scheme to Strengthen
R & D Doctoral Research Program by
Providing Funds to University Faculty
20122013
Rs. 2.0 lakhs
Prof. A. K. Verma
S.
No.
1.
Project Title
Optical control of microwave
devices-I
Duration Funding
agencies
DOE, Govt
of India
Grant Received
Rs.20 Lakhs
33
2.
Optical control of microwave
devices-II
DOE, Govt
of India
Rs.10 Lakhs
3.
High gain microstrip antenna
UGC
Rs.9 Lakhs
Prof. Avinashi Kapoor
S.
No.
1.
Funding
agencies
DST
Project Title
Duration
Grant Received
Study of Electron transport in doped ZnO
thin films by PLD and its Characterization
Date of completion: 2012
2009-2012
Rs.4.0 Lakhs
2.
DST
2009-2012
Rs. 7.0 lakhs
3.
UGC
Quantum – Dot Sensitized Solar Cells
based on Nanostructured ZnO (IndoJapan).
Theoretical study of semiconductor/metal
clad surface Plasmon waveguides.
2011-2014
Rs. 5.0 lakhs
Prof. Mridula Gupta
S.
No.
1.
Project Title
2.
Modeling and simulation of
Nanoscale Dual Material Gate
Insulated Shallow Extension
Silicon on Nothing MOSFET
for Low voltage low power
applications (PI)
2009-2012
UGC
9.21 Lakhs
3.
Physics based Modeling and
Simulation of sub-100 nm
Recessed channel (RC) and
Insulated shallow extension
(ISE) MOSFET with gate
electrode
work-function
engineering structure for high
performance applications (PI).
2011-2012
DRDO
4.7 Lakhs
Noise Analysis of Tunnel Field
Effect
Transistors
for
Biosensing applications and
Impact of Noise on Circuit
Performance (PI)
Funding
agencies
2012-2013
DU
Duration
Grant Received
2.5 Lakhs
34
4.
Modeling,
Simulation
&
Characterization of Modified
Different
Gate
Geometric
Double Gate High Electron
Mobility Transistor for High
Power and High Frequency
Applications
with
Two
Separate/Common Gate Control
(PI)
2008-2011
DST
19.67 Lacs
5.
Modeling,
Simulation
&
Characterization of Modified
Different Gate Geometric High
Electron Mobility Transistor for
Tera Hertz Applications (PI)
2007-2010
DRDO
14.83 Lacs
Dr. P. Koteswara Rao
S. No.
1.
Project Title
Analysis of forward leakage
current GaN based blue light
emitting diode with different
barriers
Sponsoring
Agency/Date of
start
DU R&D
Grant
Budget
Rs. 2, 80,
000
Status
Running
External funding sources for research and grant amount:
The faculty conducts projects which are funded by exxternal sources. Some of the projects
conducted during 2008-2013 are
Completed projects
Prof.P.K.Bhatnagar
S.
No.
1.
Project Title
Duration
Measurement of Optical NonLinearities in Wide BandgapIIVI Semiconductor Quantum
Dots Suitable for All-Optical
Switching Devices
2008-2011
Funding
agencies
DSTCompleted
Grant Received
Rs. 18 lakhs
35
2.
Fabrication characterization and 2009-2012
enhancement of efficiency of
Conducting polymer DNA
based white light emitting
diodes
DSTcompleted
Rs. 37.9536 lakhs
3.
Mutation Detection for Medical
Diagnostics using Fret Between
Cationic Conjugated Polymer
and Labelled PNA Probes
2010-2013
DBTcompleted
Rs. 54.094 lakhs
4.
Fabrication and characterization 2011-2013
of Ultraviolet (300-400 nm)
Light Emitting Diodes Based
on Heterojunctions of
Electrochemically grown nZnO Nanorods and p-type
Organic Materials
DST- IJCSP
(Japan)
Rs. 4.935 lakhs
completed
Total
Rs. 114.9826 Lakhs
Grant Received
Projects with Prof. Mridula Gupta
S.
No.
2.
Project Title
Duration
Modeling and simulation of
Nanoscale Dual Material Gate
Insulated Shallow Extension
Silicon on Nothing MOSFET
for Low voltage low power
applications (PI)
2009-2012
Funding
agencies
UGC
3.
Physics based Modeling and
Simulation of sub-100 nm
Recessed channel (RC) and
Insulated shallow extension
(ISE) MOSFET with gate
electrode
work-function
engineering structure for high
performance applications (PI).
2011-2012
DRDO
4.
Modeling,
Simulation
&
Characterization of Modified
Different
Gate
Geometric
Double Gate High Electron
Mobility Transistor for High
2008-2011
DST
9.21 Lacs
4.7 Lacs
19.67 Lacs
36
Power and High Frequency
Applications
with
Two
Separate/Common Gate Control
(PI)
5.
Modeling,
Simulation
&
Characterization of Modified
Different Gate Geometric High
Electron Mobility Transistor for
Tera Hertz Applications (PI)
2007-2010
14.83 Lacs
DRDO
Total
Rs. 50 Lakhs (Approx)
Ongoing Projects:
Prof.P.K.Bhatnagar
S.
No.
1.
Funding
agencies
DSTPortugal
Project Title
Duration
Grant Received
Development and Characterization of
Chemically functionalized Single and
Multi Walled Carbon Nanotube –
Thermoplastic Composites
2011-2014
Rs. 4.312 lakhs
2.
MNRE
Development and Characterization of a
Hybrid Structure: Salmon DNAConducting Polymer (P3HT) –
Quantum Dot (CdSe)- Carbon
Nanotube (SWNT) suitable for a Bio
Solar Cell with High Efficiency due to
Impact Ionization and Improved
Stability
2011-2014
Rs. 90.061 lakhs
3.
DBT
Development of an Accurate &
Reliable Biosensor Based on
2012-2014
Rs. 14.326 lakhs
Total
Rs. 108 Lakhs
(Approx)
Raman Scattering &
Photoluminescence Emission in Single
Walled Carbon Nanotubes for Medical
Diagnostics and Mutation Detection in
Diseased DNA
37
Prof. E. K. Sharma
S.
No.
1.
Funding
agencies
University
Grants
Commission
(UGC)
Project Title
Duration Grant Received
Coupled Mode Analysis for Design
and Simulation of Arrayed
Waveguides and
Coupled Waveguide Device
20112014
Rs.11,86,693/-
Total
Rs. 11.87
Lakhs (Approx)
Prof. Mridula Gupta
S.
No.
1
Funding
agencies
DST
Project Title
Duration Grant Received
Analytical Modeling and Simulation
for sub-100nm Advance Tunnel FET
architectures for RF/Microwave and
Biosensing Applications (PI)
2012-till
date
31.20 Lacs
2
CSIR
Capacitive Modeling, Simulation,
Characterization & Noise analysis of
surrounded/cylindrical Gate MOSFET
(SGT/CGT) for High frequency
Applications(PI)
2011-till
date
10.72 Lacs
Total
Rs. 42 Lakhs
(Approx)
38
Number of students receiving JRF/ SRF Since 2012
S. No.
Name of the students
Date of Registration
Scholarship
1
2
3
Ms. Swati Sharma
Ms. Davinder kaur
Mr. Jay Hind Verma
12.7.2012
12.7.2012
16.4.2013
4
5
Ms. Upasana
Ms. Swati Sharma
16.4.2013
12.7.2012
6
7
Ms. Dhruvashi
Mr. Ajay
Mr. Jayhind Kumar
Verma
Mr. Sachin kumar
16.4.2013
November 2013
NET-JRF
NET-JRF
CSIR-JRF (Project Fellow)
Rajiv Gandhi National Fellowship
SC/ST
NET-JRF
Rajiv Gandhi National Fellowship
SC/ST
NET-JRF
November 2013
November 2013
NET-JRF
NET-JRF
8.
9.
Number of students receiving Non-NET fellowships from 2012
S. No.
Name of the students
Date of Registration
Scholarship
1
2
Ms. Amandeep kaur
Ms. Naina Gautam
27.01.2012
16.4.2013
3
Ms. Dhruvashi
16.4.2013
Project Asstt.
IUAC(Project Fellow)
Rajiv Gandhi National Fellowship
SC/ST
4
Ms. Kusum Rawat
22.7.2013
UGC Department fellowship (NonNET)
39
Significant achievement and awards recevied by the students
The faculty and students of the Department are actively involved in various
activities and have won awards at the International and National level.
Following are some of the achievements of our faculty and students.
Distinguished National/International Awards received by faculty

Prof. Mridula Gupta: Chairperson IEEE EDS Delhi Chapter, The ED Delhi chapter was
presented with the IEEE Electron Devices Society 2013 Region 10 Chapter of year award
for an outstanding record of sustained Region 10 chapter activities.

Prof. Avinashi Kapoor: Bharat Jyoti Award 2011

Dr. Harsupreet Kaur: “Young Scientist Award” in The XXIX General Assembly of the
International Union of Radio Science (Union Radio-Scientifique Internationale) URSI-GA 2008
conference held in Chicago, Illinois, USA during August 7-16, 2008
Distinguished National/International Awards received by students

Harsupreet Kaur: “Young Scientist Award” in The XXIX General Assembly of the
International Union of Radio Science (Union Radio-Scientifique Internationale) URSI-GA 2008
conference held in Chicago, Illinois, USA during August 7-16, 2008

Harsupreet Kaur - Sponsored trip from Conference Organizers to attend XIX General
Assembly of the International Union of Radio Science, (Union Radio Scientifique
Internationale – URSI), Illinois, USA, 2008.

Rishu Chaujar - Best Student paper award in National Conference on Trends in VLSI and
embedded system, Indian Microelectronics Society Conference, Chandigarh, 2007.

Rakhi Narang - Second prize in Oral Paper Presentation at National Conference and Workshop
On Recent Advances in Modern Communication Systems and Nanotechnology (NCMCN2011), Jaipur, India.

Yogest Pratap - first prize in Oral Paper Presentation at International Conference on
Microwave Antenna, propagation & Remote Sensing (ICMARS-2012), Jodhpur, India.

Sachin Kumar - Second prize for best paper presentation at International Conference on
Microwave Antenna, propagation & Remote Sensing (ICMARS-2013), Jodhpur, India
40
List of Internataional MOU's

Indo-Japan Collaboration Project on Infrastructural Communication
Technologies
Supporting Fully Ubiquitous Information Society on the “Analysis, Modeling and Design of
Fiber Gratings for Various Applications Including Gain Flattening Fiber Amplifiers” (20062009) (Prof. E. K. Sharma)

Indo-Japan Collaboration Project (Prof. Avinashi Kapoor)
41
SEMINARS/ CONFERENCES/LECTURES ORGANIZED
International Conferences organized during 2008 -2013
The 12th International Symposium on Microwave and Optical Technology (ISMOT-2009) was
organized in Hotel Ashok, New Delhi, India from December 16-19, 2009 with Prof. Banmali S.
Rawat (ECE 1968, 1970) from the University of Nevada, Reno, USA as General Chair and
Prof. R.S. Gupta (ECE 1969) from the University of Delhi as Symposium Chair.
The symposium was inaugurated by Dr. A.P.J. Abdul Kalam, former President of India who
emphasized the importance of microwave technology and optical fiber communication in global
and Indian communication area and defense in his opening remarks. Dr. Kalam was able to
mingle with young Indian Scientists after the inauguration without any restrictions. The
ISMOT-2009 was jointly organized by the Department of Electrical and Biomedical
Engineering-College of Engineering, University of Nevada, Reno, USA and Department of
Electronic Sciences-South Campus, University of Delhi, India. The other sponsors were; IEEE
EDS Delhi Chapter, India, IEEE MTTS Delhi Chapter, India, Society for Microelectronics and
VLSI, New Delhi, India, IEEE Photonics Chapter and IEEE Northern Nevada Section.
ISMOT-2009 was attended by about 300 microwave and optical technology experts from over
35 countries. Large number of young Indian microwave and optical scientists had the
opportunity to exchange ideas with over 125 foreign experts in these fields. Over 200 research
papers were presented on the latest developments in microwave communication, antennas,
radar, biological effects, microwave and optical devices, meta materials for microwave
applications, optical communication, optical sensing, cellular phones and mobile
communication, high power amplifiers and filters, microwave photonics, electro-optics, optical
fibers, optical solitons, optical networks, laser technology, optical multiplexing/demultiplexing,
and future technologies. Several special sessions and short courses in microwaves, antennas and
optical areas were also organized.
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National Conferences organized during 2008-2013
First National Conference on Recent Developments in Electronics (NCRDE- 2013) was the first
conference organized by IEEE EDS Delhi chapter at University of Delhi, South Campus, New
Delhi, during 18-20 January 2013. The main aim of the conference and the workshop was to
provide a forum for students to interact with the eminent scientists and experts working in the area
of research and development of process, device design & technology.
The conference got an overwhelming response from a large number of researchers and experts from
different parts of the country. The event saw the researchers from industry as well as academia
presenting their work and sharing their views. The Conference received about 81 contributory
papers, out of which 51 were accepted for oral presentations. There were in total 10 technical
sessions along with 14 keynote/invited/plenary talks addressed by very eminent speakers.
The conference was held in conjunction with National Workshop on Recent Trends in
Semiconductor Devices and Technology sponsored by Defence Research and Development
Organisation.
There were two tutorials conducted on diverse topics like “ESD Challenges in Sub-micron Devices:
Design, Testing and Application” by Prof. M.K. RadhaKrishnan (NanoRel Bangalore) and
“Extending Microwave Measurements beyond the Horizon” by Mr. Adesh Kumar Jain (Agilent
Technologies) for the benefit of the students.
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Seminars/Lectures and Talks
The Department organizes seminars, lectures and talks on a regular basis and invites eminent
personalities from academia and industrial organizations to interact with the students and give
them insights about the latest developments taking place in various research areas and to provide
them with the necessary exposure required for placements in industry. Last year, the experts who
delivered invited talks during the Visitors' Programme include, Prof. B. P. Pal, Dr. A. K. Maini, Dr
Meena Mishra, Mr Ajay Ranjan Mishra. This year a short Course on "Nanotechnology Journey
from Quantum Physics to Nanoengineering" was organized and Prof Vijay K. Arora from Wilkes
University, U. S. A., Universiti Teknologi Malaysia was invited to deliver the course. The event
saw a huge participation from across India. Some other events organized during the last few years
are
 IEEE EDS Distinguished Lecture on “ESD Protection Design for RF/AMS ICs” Professor
Albert Wang, Fellow-IEEE, Department of Electrical and Computer Engineering,
University of California, RiversideUSA on May 29, 2009
 The 18th WIMNACT-MQ3-New Delhi, India - Workshop and IEEE EDS Mini-colloquium
on NAnometer CMOS Technology- Mini-Colloquia On Compact Modeling and
Fabrication Techniques of Advance MOSFET/ HEMT Structures was organized during 45 June 2009
 Technical Lecture on “Emerging Technologies for Future Digital Campus” by Dr. Keith
Rajecki, Solution Architect GEH, Sun Microsystem, on August 19, 2009.
 Lecture Series on March 22, 2010 was organized in which Prof. K.L. Chopra Former
Director, IIT Kharagpur, Prof. A.K. Ghatak, Former Professor, IIT Delhi,
Dr. S.K. Mishra, Director, RTDC, Sharda University Prof. Dinesh Singh, Director,
University of Delhi South Campus delivered lectures on varied topics.
 IEEE-EDS Distinguished Lecturer Talk by Dr. M. K. Radhkrishnan, Chief Technical
Consultant, NanoRel on Advancements in Device Analysis : Modes of Search for D-Zone
on September 24, 2010
 IEEE-EDS Distinguished Lecturer Talk Rajendra Singh Holcombe Department of Electrical
and Computer Engineering, Center for Silicon Nanoelectronics, Clemson University,
Clemson on January 07, 2010
 Third National Workshop On Recent Trends in Semiconductor Devices and Technology
held during January 19-20, 2013
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