1. No category

III-V-MOS
Technology CAD for III-V Semiconductor-based MOSFETs
Project number: 619326
Start date: 01/11/2013
Call (part) identifier: FP7-ICT-2013-11
Funding scheme: Collaborative project
III-V-MOS Dissemination Plan
Authors: Pascale Caulier (SINANO), Enrico Sangiorgi (SINANO), Francis Balestra (SINANO),
Luca Selmi (IUNET)
Edited by: Pascale Caulier (SINANO)
Date: December 1st, 2014
1
Table of Content
1. Executive Summary ......................................................................................................................... 3
2. Introduction..................................................................................................................................... 3
2.1 Introduction to the III-V-MOS Project and Project objectives .................................................. 3
2.2 Purpose and Scope of “Dissemination” activities and “Dissemination plan” ........................... 4
2.3 III-V-MOS Dissemination in the Description of Work ................................................................ 4
3. Target Groups .................................................................................................................................. 4
4. Dissemination Instruments, Strategies and Objectives Internal & External ................................... 5
4.1. Project Website ........................................................................................................................ 5
4.2 Logos, banners, footers, etc. ..................................................................................................... 6
4.3 Overview of Communication Strategies, Purpose and Target groups ...................................... 7
4.4 Standard Project Presentation and Power Point Template ...................................................... 8
4.5 Promotional materials: Press Releases, Newsletter and Factsheet Leaflets............................. 8
4.6 Linking III-V-MOS ....................................................................................................................... 9
4.7 Events, Seminars, Conferences ................................................................................................. 9
4.8 Scientific publications via open access channels....................................................................... 9
5. Planned Monitoring III-V-MOS Dissemination Activities and related instruments....................... 10
6. Dissemination Carried Out and Major public events planned during the project ........................ 11
6.1 Events, Conferences, Seminars, Demonstrations organized by III-V-MOS partners ............... 11
6.2 Presentations at Conferences and Scheduled So Far (highlighted in blue) ............................ 13
6.3 Press Releases, Newsletters and Articles Published and Scheduled So Far ............................ 18
7. Conclusion and Next Steps ............................................................................................................ 21
2
1.ExecutiveSummary
The Dissemination Plan is produced as part of the activities of Task 1.2 “Dissemination” of the III-VMOS project. It is a public rolling document which is made available on the project website for
external parties interested to get in contact or participate to dissemination activities for the III-VMOS project. The document is not intended to replace the periodic reports on dissemination
activities, although some overlap may exist. The document is intended to serve as an open working
instrument for monitoring and planning purposes.
2.Introduction
2.1 Introduction to the III-V-MOS Project and Project objectives
The III-V-MOS project is a scientific project funded by the Community programme ICT-2013.3.1,
focusing on More Moore Nanoelectronics. The project started on 1 November 2013 and runs for
three years. 8 partners from 6 European countries are working towards the following goals:
- to develop, validate and calibrate a consistent set of comprehensive “high-level” tools for
III-V semiconductor based n-MOSFETs at and beyond the 14 nm node and to generate material
parameter data forming the base for TCAD compact model development (WP2, WP3).
- to develop, validate and calibrate TCAD compact models for III-V semiconductor based nMOSFETs at and beyond the 14 nm node forming the base for accurate and predictive quantum drift
diffusion and Monte Carlo TCAD simulations (WP3, WP4).
- to narrow down the technology development options of III-V n-MOSFETs of the III-V/Ge
ITRS scenario by exploring via TCAD and more fundamental tools the viable device optimization
scenarios and by identifying the most promising configurations (WP5).
- to deliver to end users in semiconductor manufacturing industry and nanoelectronics
research labs quantum drift diffusion and Monte Carlo TCAD setups for comparison with available
hardware (WP6).
Project Partners
Consorzio Nazionale Interuniversitario per la Nanoelettronica (Italy)
Eidgenoessische Technische Hochschule Zurich (Switzerland)
Interuniversitair Micro-Electronica Centrum VZW (Belgium)
IBM Research GMBH (Switzerland)
QuantumWise A/S (Denmark)
GLOBALFOUNDRIES Dresden Module One LLC & Co. KG (Germany)
Synopsys Switzerland LLC (Switzerland)
SiNANO Institute (France)
3
Project Acronym
IUNET
ETHZ
IMEC
IBM
QW
GF
SNPS-CH
SI
2.2 Purpose and Scope of “Dissemination” activities and “Dissemination plan”
The Dissemination Plan is produced as part of the activities of Task 1.2 “Dissemination”. It is a public
rolling document which will be made available on the project website for external parties interested
to get in contact or participate to dissemination activities for the III-V-MOS project. The current
document associates results to be disseminated to different target groups and to the corresponding
dissemination means. It provides an overview of what is known and planned at the timing of the
document in preparation. The document is intended to serve as an open working instrument for
monitoring and planning purposes. As such, it will be subject to periodic reviews and updated
according to actual actions. The document is not intended to replace the periodic reports on
dissemination activities, although some overlap may exist.
The planning of major dissemination activities has been and will be periodically discussed at the
Governing board meetings.
2.3 III-V-MOS Dissemination in the Description of Work
At the time of production of this document, the Dissemination Task (Task 1.2) has completed all the
deliverables listed in the project’s Description of Work: the III-V-MOS project website (D1.2), a
standard project presentation (D1.1) as well as this Dissemination plan. By the end of the second
project year, as done for the first year in the D1.3, a dissemination report (D1.5) will summarise the
efforts made and results achieved with regard to dissemination the project. The website is available
at http://www.iii-v-mos-project.eu/, where D1.1, D1.2 and D1.3 are available publicly in the “Public
Deliverables” section.
As stated in the DoW, the objectives of the III-V-MOS Task 1.2 are also to:
- Create consistent and high quality access to III-V-MOS’s own results and related developments for
both the project partners and an external professional audience.
- Create a network for dissemination purposes; implement concerted actions with ITRS and the
individual project partners; make sure all dissemination activities are in line with plans; maximise
opportunities for dissemination.
- Coordination of all III-V-MOS partners with other EU activities.
3.TargetGroups
To be effective, it is essential that the dissemination is tailored to specific target groups. The
following groups were identified upfront at the time of writing
−
−
−
To the general public and media
To the Scientific and Technological Community (including pre-industrials & industrials)
To the Students' Community
4
−
To policy-makers
In the following existing and planned dissemination actions will be reviewed according to target
groups and objectives.
Members of target groups interested to participate or contribute should contact the III-V-MOS
project dissemination manager: [email protected].
4.DisseminationInstruments,StrategiesandObjectivesInternal&
External
In order to spread the word about the project as well as its outcomes, the III-V-MOS project uses
different instruments according to different strategies. The most important source for any
information about the project is the III-V-MOS project website, which aims to keep both project
partners as well as the general public, up-to-date with the project. The first part of this chapter will
provide an overview of the project website, while the following part focuses on other tools to
communicate about the project to external people.
4.1. Project Website
The project website was launched in January 2014 and will continuously be updated along the whole
project. It is available at: http://www.iii-v-mos-project.eu/ and aims at providing a comprehensive
and easily accessible access point to III-V-MOS related information.
The main goals of the project website are:
- To provide information on the project’s activities, progress and outcomes (public section)
- To offer to project partners access to all documentation and deliverables produced in the
course of the project (Consortium area).
- To provide a section which is used by all partners for internal communication and for
sharing scientific documents.
a) Public Area
The public area of the website addresses the above listed target groups, mainly those kind of users
with an active interest in either activities of III-V or else with a specific interest in More Moore
Nanoelectronics in general. All information provided on these publicly accessible pages aim to inform
external users about the structure, goals and the current and expected outcomes of the project.
Hence, it provides updated information on the following topics:
• Homepage
(Start page with basic information about the project)
• Consortium
(List of all project partners, with location and logos, including links to a specific description for
each partner, including providing contact information and links to their institutional website)
• Work plan
5
(III-V-MOS Work Package structure and interdependences, Short summary of each Work
Package)
• Background and motivation
(Explanation of the context and importance of the project)
• Available Technologies
(from IMEC and IBM)
• Dissemination
(News, Workshop & Conferences, List of performed actions, List of publications, press releases,
etc...)
• Calendar of events
(Basic information on internal and external events relevant for either the partners or else the
scientific community)
• Management structure
(detailed organisation chart)
• Public Deliverables
• Contacts
(Contact information to the project coordinator and WP leaders)
b) Consortium Area
The consortium’s area is password protected and restricted to the III-V-MOS consortium members. It
gives access to all documents (Grant Agreement, reporting templates and guidelines, internal
agendas, meeting minutes, presentations, dissemination templates, publications, etc.) and
Milestones and Deliverables produced in the course of the project. All working or restricted
documents in the consortium’s area are made accessible under the WP they were produced in.
Specific tasks of the Consortium area useful for efficient project management are:
- to serve as repository of the official mailing lists for groups of interest in the consortium. (all, GB
members, scientific partners, WP leaders, etc…).
- to provide a dedicated area for sharing scientific documents between III-V-MOS partners (per WP or
global)
The SINANO partner is responsible to develop and maintain the website up-to-date.
4.2 Logos, banners, footers, etc.
The III-V-MOS logo (voted during the Kick-off meeting in November 2013) has a colourful appearance
aimed at stimulating curiosity for the project. To this end it has been included in well visible positions
on all dissemination materials, internal and external documents and webpages, press releases or
other publications as well as all deliverables, milestones and reports produced during the lifetime of
the project. In compliance with the Grant Agreement, the European Union is always mentioned as
funding agency through the updated EC logo.
6
The same purpose of stimulating curiosity and capturing attention toward the project is pursued by
thin banners and short footers added by a few of the consortium members at the end of emails,
messages, etc.
4.3 Overview of Communication Strategies, Purpose and Target groups
Means of
communication
INTERNAL
Main target
groups
Project Website
Consortium area
Project
partners
EXTERNAL
Project Website
Public area
ALL
Partners´
institutional websites
To the
Scientific and
Technological
Community
& To the
Students'
Community
Press releases and
Newsletters
ALL
Professional Social
media
Scientific and
Technological
Community,
Policy-makers
Project presentations
at events on national
and international
level
Scientific and
Technological
Community,
Policy-makers
III-V-MOS
Scientific and
Purpose
Role of partners
Exchange
information,
collaborate
Use the internal pages
and provide relevant
information
Create consistent
and high quality
access to III-VMOS’s own
results and
related
developments
Promote III-VMOS project
Provide relevant
information and
documentation to enrich
the project website and
to be shared by all
Raise awareness,
Inform
at national and
international level
Increase visibility,
Provide easy
redirection to the
project website
Inform the national press
and to diffuse widely
Promote,
disseminate
project results,
foster
collaboration
Inform, give
7
Link to the III-V-MOS
website
Add materials and links
in personal or interest
group webpages on, for
instance, linkedin and
similar social media
Present the project on
national level
Participation of the
dissemination events
Technological
Community
Presentations at
international
conferences,
workshops, …
Participation at
Tutorials, Summer
Schools
Scientific and
Technological
Community
Participation to ENF
Policy makers
Publications in Highlevel journals
Scientific and
Technological
Community
Scientific and
Technological
Community
Demonstrations
Students’
community
visibility,
disseminate
project results
Disseminate
project results
partners, organization
Disseminate
project results,
Stimulate
research in the
field
Create
opportunities to
meet policy
makers at
regional, national
and international
level
Disseminate
project results
Participation of partners
Raise awareness,
Promote project
results
Project partners to make
demonstrations
Partners to participate
Participation of partners
Partners to write
publications
In addition to the continuous update of the project website, and to the actions planned at the time of
writing of the DoW, III-V-MOS will be disseminated externally via various offline and online channels
and in cooperation with the project partners. The SINANO Institute will support the partners in
coordinating the external communication on national level by providing the necessary tools, such as
fact sheets, standard project presentation, Newsletters, …
All partners are requested to further distribute promotional material through their communication
channels and networks.
4.4 Standard Project Presentation and Power Point Template
A standard project presentation containing information on key figures, objectives, partners, structure
of work and technical workflow will be available on the website. A power point template will be
created to be used by all project partners for project presentations.
4.5 Promotional materials: Press Releases, Newsletter and Factsheet Leaflets
8
Press releases will be published targeting various media to inform about the start and ongoing
achievements of the project. The press release produced can be reused and adjusted by the project
partners according to their needs. A press release announcing the start of the project was issued in
several countries. The consortium plans to issue at least one additional press release at the end of
the project to present the final results to the general public
Press releases will be sent out in the different countries by the respective partners of that country.
All press releases will be archived on the III-V-MOS project website.
A factsheet leaflet will be prepared to be distributed at the first III-V-MOS workshop scheduled for
January 2015 in Bologna, Italy.
4.6 Linking III-V-MOS
To increase the presence of III-V-MOS and its content in the World Wide Web, relevant websites will
be asked to refer to the project in their links sections throughout the project. Currently only a limited
number of websites – including some of the partner institutions – are linking to the III-V-MOS project
website. Increasing the number of links to III-V-MOS on the WWW will affect the google ranking
positively and generally lead to a greater visibility of the III-V-MOS project on the web.
To increase the visibility of the project and promote its existence, it has been decided to create a IIIV-MOS group on Linkedin This point will be further develop later, when we will have more than 1
member…
4.7 Events, Seminars, Conferences
Other important methods of disseminating the project results are International workshops, seminars
and conferences organized by III-V-MOS partners, the European Commission and other relevant
organizations. The events will be published on the calendar of the III-V-MOS website. All III-V-MOS
project presentations are and will be made available on the project website. As for 2015 the
consortium will work on the preparation of the first Workshop at the ULIS-EUROSOI Conference
(Bologna, Italy), Invited and tutorial presentations at the INFOS 2015 (Udine, Italy) and a Workshop at
the ESSDERC 2015 in Graz (Austria).
4.8 Scientific publications via open access channels
The consortium plans to preliminary post on ArXiV papers submitted for publication to regular peer
reviewed journals. The actual use of open access channels typically implies publication costs and will
be evaluated on a case by case basis.
9
5.PlannedMonitoringIII-V-MOSDisseminationActivitiesand
relatedinstruments
In order to capture the impact of communication, a combination of criteria or feedback mechanisms
will be used to measure the effectiveness of each dissemination activity. Regularly, partners will be
asked to provide information on the following aspects:
a) Events:
Type of activity
Place
Date
Participants
Organizer
Conference, workshop, presentation, social media ,
demonstration
Which event? Where the dissemination activity took place?
Date of the dissemination activity
Audience type and number
Partner or collaborating organisation /project
b) Other Communication:
Responsible Partner /Country
Title of article / news
Name of publication / website
Type of publication
Link (if online)
Date of publication
Based on these criteria, which should be short and concise, the SINANO Institute has developed
Dissemination Reporting Templates (see Annex II, III and IV). Partners are required to report regularly
on their activities. The template may be slightly revised in the course of the project to reflect changes
in dissemination requirements. The SINANO Institute is responsible for monitoring the feedback and,
if necessary, reminding the partners to report back.
10
6.DisseminationCarriedOutandMajorpubliceventsplannedduringtheproject
Dissemination actions carried out so far have been listed in D1.3 and will not be repeated here. The following table contains the major actions planned
for execution after November 1st, 2014. At the time of reading, some of these actions might have already taken place. Please consult the project website
at http://www.iii-v-mos-project.eu for an up to date list of activities, publications, etc.
6.1 Events, Conferences, Seminars, Demonstrations organized by III-V-MOS partners
N
°
O.
Type of
activities
Organizer/Partner
s involved
Title of event
Date
Place
(Main purpose of
this activity)
organized
1
Workshop
1
SINANO, IUNET,
Synopsys, IMEC…
Countries addressed
Type of
audience1
1st III-V-MOS Technical
Workshop
January 26,
2015
Bologna, Italy
Type of public: Scientifics, Students, Civil Society, Policy makers, Medias …
11
Scientific
Community
Size of
audience
60
International
2
Demonstrati
on
3
Demonstrati
on
SYNOPSYS
Live demo of the new
features of Synopsys
TCAD tools for III-V
compund
semiconductor devices
January 26,
2015
Bologna, Italy
Scientific
Community
60
International
SYNOPSYS
Live demo of the new
features of Synopsys
TCAD tools at the IEDM
December,
2015
S.Francisco
Scientific
Community
100
International
Researchers in the
field of modeling of
electronic devices
and materials at the
nanoscale
65
USA, Japan, Korea, India,
Australia, Germany, Denmark,
Sweden, Slovakia, Finland, UK,
Belgium, Switzerland.
PhD students
10
QuantumWise A/S,
4
Conference
ETH Zürich,
Synopsys.
QuantumHagen – Workshop
on modeling of electronic
devices and materials at the
nanoscale.
1-3 July
2014
Copenhagen,
Denmark
EURODOTS PhD Course
5
PhD Course
IUNET-UD
Nanoscale MOS Transistors:
Semi-Classical Modelling and
Applications
26-30
/05/2014
Udine, Italy
12
European
6.2 Presentations at Conferences and Scheduled So Far (highlighted in blue)
III-V-MOS- LIST OF DISSEMINATION ACTIVITIES
Presentations at the Conferences and Workshops
N
O.
Type of
activitie
s2
Forum
Main leader/
author
Title of event
Partners
involved
ALL
Confere
nce
IUNET, IBM
Summer
School
ALL
Confere
nce
ALL
European Nanoelectronics Forum
INFOS 2015
MIGAS 2016 or SINANO Summer
School 2016
Type of
audience3
Title of paper/presentation/etc.
Emphasize if invited
Date
Participation upon invitation and
poster
Nov. 2015
Invited and contributed
presentations and tutorials
Presentations and tutorials
ESSDERC workshop
2
Conferences, workshops, exhibitions, thesis, interviews…
3
Type of public: Scientifics, Students, Civil Society, Policy makers, Medias …
(Main purpose
of this activity)
13
Scientific
Countries
addressed
European
100
Scientific
06/2015
European
100
06/2015 or
08/2015
08/2015
Presentations
Place
Size
of
audie
nce
Scientific /
Students
Graz,
Austria
European
60
Scientific
50
Internationa
l
1
2
PhD
Course
Worksh
op
Luca Selmi,
Davis Esseni,
IUNET-UD
David Esseni
IUNET-UD
EURODOTS PhD Course
Nanoscale MOS Transistors: SemiClassical Modelling and Applications
2014 International Conference on
Carrier Transport in Nanoscale in
Nanoscale MOSFETs and Tunnel FETs:
Fundamental Aspects and Design
Implications
Simulation of Semiconductor
Processes and Devices (SISPAD)
26-30
/05/2014
Udine,
Italy
PhD students
10
European
08/09/2014
Yokoham
a, Japan
Researchers,
practitioners
and students
55
Internationa
l
80
Internationa
l
INVITED
EC Workshop on Multi Key Enabling
Technologies Pilot lines Project
Participation to a consultation
0910/09/2014
Villach,
Austria
Micro- and
nano- electronic
stakeholders,
Industry,
Experts in
mKET
Simulation and analysis of nMOS
transistors with alternative III-V
compound semiconductor channel
material
Poster presentation to industrial
stakeholders
26/06/2014
Italy
Industrial
stakeholders
40
National
Efficient Simulation of Nanoscale
Electron Devices
Poster presentation to industrial
stakeholders
26/06/2014
Italy
Industrial
stakeholders
40
National
Advanced modelling of nanowire
transistors
Poster presentation to industrial
stakeholders
26/06/2014
Italy
Industrial
stakeholders
40
National
Luca Selmi
3
Open
Worksh
op
IUNET-UD
Enrico Caruso
4
PhD
Expo
IUNET-UD
5
6
PhD
Expo
Patrik Osgnach
PhD
Expo
Daniel Lizzit,
IUNET-UD
IUNET-UD
14
7
Confere
nce
Enrico Caruso,
Daniel Lizzit,
Patrik Osgnach
IUNET-UD
8
Worksh
op
9
Confere
nce
10
Confere
nce
IUNET
Modelling/Simulation of advanced
MOSFET with III-V-channel;
Simulation and design aspects of
planar and nanowire transistors;
Presentations on research progress
within PhD activities
26/06/2014
Italy
Students and
Scientific
Community
18/9/2014
Bologna,
Italy
Scientific
community
Copenhag
en,
Denmark
Scientifics
Paris,
France
Scientifics
Grenoble,
France
Scientifics
Waikoloa
(HI) - USA
Scientific /
Students
80-90
Internationa
l
Grenoble,
Scientifics
40-50
Internationa
40
Regional/N
ational
50
National
65
Internationa
l
100
Internationa
l
50
Internationa
l
Advanced and efficient modelling of
nanoscale devices
Third IUNET Days
QuantumHagen
QW
IWCE
QW
IUNET activity in the More Moore area
Accurate band structures from DFT and
simple phonon-limited mobility
calculations. (Invited talk)
Phonon-limited Mobilities from Landauer
transport combined
2/6/2014
5/6/2014
with molecular dynamics (Poster)
11
Confere
nce
QW
CMOS Emerging Technologies
Research
First-principles Modeling of Novel
Semiconductor Materials and Devices
8/6/2014
(Invited talk)
12
Confere
nce
IUNET-MORE
13
Confere
IMEC
IEEE International Reliability Physics
Symposium (IRPS)
A new method for extracting interface
state and border trap densities in highk/III-V MOSFETs
CMOS Emerging Technologies
High mobility FinFET Devices
15
June 1-5,
2014
8 July 2014
nce
14
15
Tutorial
Worksh
op
IMEC
M. Luisier, A.
Szabo, and R.
Rhyner,
Research Symposium
(Invited talk)
France
ESSDERC – CMOS technology at
the nm scale era
CMOS scaling to the 10nm technology
node and beyond
a review of FinFET technology
QuantumHagen Workshop (Modeling
of Electronic Devices and Materials at
the Nanoscale)
Advanced electro-thermal simulation of
nano electronic devices
Seminar at Samsung
22
September
2014
l
Venice,
Italy
Scientifics
Scientifics
July 2014
Copenhag
en,
Denmark
Atomistic Simulation of Next Generation
Nanoelectronic Devices
Scientists
May 2014
Milpitas,
CA, USA
Atomistic Simulation of Next Generation
Nanoelectronic Devices
Santa
Clara, CA,
USA
Scientists
May 2014
Scientists
May 2014
Mountain
View, CA,
USA
Hong
Kong
Scientists
40
Internationa
l
Internationa
l
65
ETHZ
16
Seminar
M. Luisier, A.
Szabo, and R.
Rhyner, ETHZ
Seminar
M. Luisier, A.
Szabo, and R.
Rhyner, ETHZ
Seminar at Intel
17
Seminar at Synopsys
Seminar
M. Luisier, A.
Ziegler, and R.
Rhyner, ETHZ
Worksh
op
M. Luisier, R.
Rhyner, and A.
Szabo
Workshop on Simulation and
Modeling of Emerging Devices
(SMEE) 2014 (Keynote)
18
19
Quantum Transport Simulation of Next
Generation Nanoelectronic Devices
Atomistic Simulations of Nanoelectronic
Devices
16
December
2014
USA/Korea
10-15
USA
10-15
10-15
USA/Switze
rland
100
Internationa
l
20
Worksh
op
M. Luisier, A.
Szabo, and R.
Rhyner
21
Confere
nce
22
23
Worksh
op
CECAM Workshop on High
performance models for charge
transport in large-scale materials
systems
Electro-thermal simulations of
nanoelectronic devices
CSInternational 2014
Co-integration of III-V and Ge for CMOS
(Keynote invited)
IBM
NanoKISS 2014
Co-integration of high mobility materials
for CMOS (Invited )
Software release
Release notes
Software release
Newsletter
IBM
SNPS
24
SNPS
25
26
SNPS
SNPS
October
2014
March 18th,
2014
July 15th,
2014
Scientists
Frankfurt,
Germany
Industry,
engineers
300
attend
ees
Internationa
l with large
European
attendance
Daejeon,
Korea
Students,
engineers
100
attend
ees
Korea,
Japan
50
Internationa
l
Sept.2014
SNPS customer
worldwide
SNPS customer
and potential
customers
worldwide
Sept.2014
SNPS customer
worldwide
SNPS customer
worldwide
Software release
Sentaurus Device Monte Carlo User
Guide
Sept.2014
Software
Advanced Calibration for Device
Simulation User Guide
Sept.2014
17
Bremen,
Germany
6.3 Press Releases, Newsletters and Articles Published and Scheduled So Far
III-V-MOS LIST OF SCIENTIFIC (PEER REVIEWED) PUBLICATIONS, STARTING WITH THE MOST IMPORTANT ONES – PRESS-RELEASE –NEWSLETTER DEC 2014
N
O.
Main author,
Title
Partners involved
Title of the
periodical or the
series
Number,
date or
frequency
Publis
her
Place
of
publicat
ion
Year
of
public
ation
Relev
ant
pages
Permanent
identifiers
(if available)
DOI
1
2
3
4
Simulation analysis of III-V nMOSFETs: channel materials,
Fermi level pinning and biaxial
strain
Performance benchmarking
and Effective Channel Length
for nanoscale InAs,
In0.53Ga0.47As and sSi nMOSFETs
The impact of interface states
on the mobility and the drive
current of III-V MOSFETs
A new method for extracting
interface state and border trap
Enrico Caruso, Daniel Lizzit, Patrik
Osgnach, David Esseni, Pierpaolo
Palestri, Luca Selmi
International
Electron Devices
Meeting (IEDM)
December
2014
IEEE
Piscata
way
2014
pp.
188191.
Is/Will open
access
provided to
this
publication?
No
IUNET-UD
D. Lizzit, D.Esseni, P.Palestri,
P.Osgnach and L.Selmi
IUNET-UD
P. Osgnach, E. Caruso, D. Lizzit, P.
Palestri, D. Esseni and L. Selmi
IUNET-UD
G.Sereni
IEEE Transactions
on Electron
Devices
Vol. 61, n. 6
IEEE
Proceeding of the
International
Conference on
Ultimate Integration
on Silicon (ULIS)
Apr 2014
IEEE
IEEE International
Reliability Physics
June 2014
IEEE
18
Piscata
way
Piscata
way
2014
2014
2014
2027 2034
DOI:
10.1109/TED.201
4.2315919;
Scopus: 2-s2.084901363412
No
21-24
DOI:
10.1109/ULIS.201
4.6813896;
Scopus: 2-s2.084901310895
No
DOI: 10.1109/IRP
No
5
6
6
densities in high-k/III-V
MOSFETs
IUNET-MORE
InGaAs Gate-All-Around
Nanowire Devices on 300mm
Si Substrates
N. Waldron, C. Merckling, L. Teugels,
P. Ong, A. Ibrahim, F. Sebaai, K. Barla,
N. Collaert and A. Thean IMEC
A new formulation for surface
roughness limited mobility in
bulk and ultra-thin-body
metal–oxide–semiconductor
transistors
Press Release
Symposium (IRPS)
S.2014.6860590
IEEE EDL
To be
published;
accepted
for
publication
IEEE
Journal of Applied
Physics
December
2014
AIP
Publis
hing
Daniel Lizzit, David Esseni, Pierpaolo
Palestri, and Luca Selmi
-
2014
2014
IUNET-UD
IUNET-SINANO
No
Journ
al of
Applie
d
Physic
s 116,
22370
2
Jan. 2014
III-V-MOS LIST OF SCHEDULED SCIENTIFIC PUBLICATIONS/ NEWSLETTERS
Main author,
NO.
Title
Place of publication
Partners involved
19
Date
http://dx.doi.org/1
0.1063/1.4903768
No
1
1st III-V-MOS Newsletter
SINANO, IUNET, Synopsys,
Quantumwise, IMEC
2
Scientific papers
IUNET, IBM, SNPS, ETHZ, QW
3
2nd III-V-MOS Newsletter
ALL
20
Dec. 2014
EUROSOI-ULIS2015
Jan. 2015
Oct. 2015
7.ConclusionandNextSteps
The dissemination plan describes the tools, activities and means of cooperation, which will ensure
that the III-V-MOS project results and the content itself will be disseminated widely and effectively to
the different target groups. The impact of the different channels on the different user groups as well
as the role of the partners in this process will help to streamline the dissemination efforts. Project
partners are required to actively support the dissemination efforts coordinated by the SINANO
Institute. The dissemination reporting template will help the partners to report on their
dissemination activities in a structured way. Task 1.3 leader will monitor and evaluate the overall
impact of the dissemination efforts.
The dissemination work during the first year was mainly devoted to establishing the tools for internal
and external communication, to inform relevant stakeholders about the new project, to create
conditions for joint actions, to contact the relevant one’s for cross-linking and, if appropriate for joint
dissemination activities.
21