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IRF510, SiHF510
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
100
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
0.54
8.3
Qgs (nC)
2.3
Qgd (nC)
3.8
Configuration
Single
D
Available
RoHS*
COMPLIANT
DESCRIPTION
TO-220
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
G
S
G
Dynamic dV/dt Rating
Repetitive Avalanche Rated
175 °C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead (Pb)-free Available
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRF510PbF
SiHF510-E3
IRF510
SiHF510
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
Single Pulse Avalanche
Energyb
UNIT
V
5.6
4.0
A
20
0.29
W/°C
mJ
EAS
100
Repetitive Avalanche Currenta
IAR
5.6
A
Repetitive Avalanche Energya
EAR
4.3
mJ
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
PD
43
W
dV/dt
5.5
V/ns
TJ, Tstg
- 55 to + 175
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, RG = 25 Ω, IAS = 5.6 A (see fig. 12).
c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91015
S-81377-Rev. A, 30-Jun-08
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1
IRF510, SiHF510
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
3.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = 250 µA
100
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.12
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
-
-
25
VDS = 80 V, VGS = 0 V, TJ = 150 °C
-
-
250
Gate-Source Threshold Voltage
µA
-
-
0.54
Ω
gfs
VDS = 50 V, ID = 3.4 Ab
1.3
-
-
S
Input Capacitance
Ciss
VGS = 0 V,
-
180
-
Output Capacitance
Coss
VDS = 25 V,
-
81
-
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
ID =3.4 Ab
VGS = 10 V
Dynamic
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
-
15
-
ID = 5.6 A, VDS = 80 V
-
-
8.3
VDS = 10 V,
-
-
2.3
see fig. 6 and 13b
-
-
3.8
-
6.9
-
-
16
-
-
15
-
-
9.4
-
-
4.5
-
-
7.5
-
-
-
5.6
-
-
20
-
-
2.5
V
-
100
200
ns
-
0.44
0.88
µC
VGS = 10 V
VDD = 50 V, ID = 5.6 A
RG = 24 Ω, RD = 8.4 Ω, see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
pF
Between lead,
6 mm (0.25") from
package and center of
die contact
D
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 5.6 A, VGS = 0 Vb
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/µsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91015
S-81377-Rev. A, 30-Jun-08
IRF510, SiHF510
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
101
Top
100
4.5 V
ID, Drain Current (A)
ID, Drain Current (A)
101
175 °C
100
20 µs Pulse Width
TC = 25 °C
10-1
100
4
4.5 V
20 µs Pulse Width
TC = 175 °C
100
10-1
91015_02
101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Document Number: 91015
S-81377-Rev. A, 30-Jun-08
6
7
8
9
10
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance
(Normalized)
ID, Drain Current (A)
100
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
5
VGS, Gate-to-Source Voltage (V)
91015_03
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101
20 µs Pulse Width
VDS = 50 V
10-1
101
VDS, Drain-to-Source Voltage (V)
91015_01
25 °C
3.0
ID = 5.6 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
91015_04
20 40 60 80 100 120 140 160 180
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRF510, SiHF510
400
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)
320
240
Ciss
160
Coss
80
Crss
ISD, Reverse Drain Current (A)
Vishay Siliconix
175 °C
100
25 °C
10-1
VGS = 0 V
0
100
101
0.5
VDS, Drain-to-Source Voltage (V)
91015_05
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
VDS = 50 V
8
4
For test circuit
see figure 13
0
91015_06
2
4
6
8
1.1
1.2
QG, Total Gate Charge (nC)
2
10
100 µs
5
1 ms
2
1
10 ms
5
TC = 25 °C
TJ = 175 °C
Single Pulse
2
0.1
10
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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4
1.0
Operation in this area limited
by RDS(on)
5
VDS = 20 V
0
0.9
102
VDS = 80 V
12
0.8
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = 5.6 A
16
0.7
VSD, Source-to-Drain Voltage (V)
91015_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
0.6
1
91015_08
2
5
10
2
5
102
2
5
103
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91015
S-81377-Rev. A, 30-Jun-08
IRF510, SiHF510
Vishay Siliconix
RD
VDS
VGS
6.0
D.U.T.
RG
+
- VDD
5.0
ID, Drain Current (A)
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
4.0
3.0
Fig. 10a - Switching Time Test Circuit
2.0
VDS
1.0
90 %
0.0
25
50
75
100
125
150
175
TC, Case Temperature (°C)
91015_09
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
0 - 0.5
1
0.2
0.1
PDM
0.05
0.02
0.01
0.1
t1
Single Pulse
(Thermal Response)
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
91015_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T
RG
+
-
IAS
V DD
10 V
tp
0.01 Ω
VDS
A
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91015
S-81377-Rev. A, 30-Jun-08
Fig. 12b - Unclamped Inductive Waveforms
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IRF510, SiHF510
Vishay Siliconix
EAS, Single Pulse Energy (mJ)
300
ID
2.3 A
4.0 A
Bottom 5.6 A
Top
250
200
150
100
50
VDD = 25 V
0
25
91015_12c
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91015
S-81377-Rev. A, 30-Jun-08
IRF510, SiHF510
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
•
•
•
•
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91015.
Document Number: 91015
S-81377-Rev. A, 30-Jun-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1