Download Report

IRF840S, SiHF840S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
500
RDS(on) (Ω)
VGS = 10 V
0.85
Qg (Max.) (nC)
63
Qgs (nC)
9.3
Qgd (nC)
32
Configuration
Single
D
D2PAK
•
•
•
•
•
•
•
•
Surface Mount
Available in Tape and Reel
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirement
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
(TO-263)
G
G D
S
S
N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SMD-220 is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The SMD-220 is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
D2PAK (TO-263)
IRF840SPbF
SiHF840S-E3
IRF840S
SiHF840S
D2PAK (TO-263)
IRF840STRLPbFa
SiHF840STL-E3a
IRF840STRaL
SiHF840STLa
D2PAK (TO-263)
IRF840STRRPbFa
SiHF840STR-E3a
IRF840STRa
SiHF840STRa
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
SYMBOL
LIMIT
VDS
VGS
500
± 20
8.0
5.1
32
1.0
0.025
510
8.0
13
125
3.1
3.5
- 55 to + 150
300d
ID
IDM
Pulsed Drain Currenta
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
EAS
Single Pulse Avalanche Energyb
IAR
Avalanche Currenta
EAR
Repetiitive Avalanche Energya
Maximum Power Dissipation
TC = 25 °C
PD
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
c
Peak Diode Recovery dV/dt
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12).
c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91071
S-81432-Rev. A, 07-Jul-08
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
www.vishay.com
1
IRF840S, SiHF840S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
PARAMETER
RthJA
-
62
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
1.0
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 µA
500
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.78
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
-
-
± 100
VDS = 500 V, VGS = 0 V
-
-
25
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
-
-
0.85
Ω
4.9
-
-
S
-
1300
-
ID = 4.8 Ab
VGS = 10 V
VDS = 50 V, ID = 4.8
Ab
µA
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 8.0 A, VDS = 400 V,
see fig. 6 and 13b
-
310
-
-
120
-
-
-
63
-
-
9.3
Gate-Drain Charge
Qgd
-
-
32
Turn-On Delay Time
td(on)
-
14
-
-
23
-
-
49
-
-
20
-
-
4.5
-
-
7.5
-
-
-
8.0
-
-
32
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
tr
td(off)
VDD = 250 V, ID = 8.0 A,
RG = 9.1 Ω, RD = 31 Ω, see fig. 10b
tf
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 8.0 A, VGS = 0
S
Vb
TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/µsb
-
-
2.0
V
-
460
970
ns
-
4.2
8.9
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91071
S-81432-Rev. A, 07-Jul-08
IRF840S, SiHF840S
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91071
S-81432-Rev. A, 07-Jul-08
www.vishay.com
3
IRF840S, SiHF840S
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91071
S-81432-Rev. A, 07-Jul-08
IRF840S, SiHF840S
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91071
S-81432-Rev. A, 07-Jul-08
www.vishay.com
5
IRF840S, SiHF840S
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T.
RG
+
-
I AS
V DD
VDS
10 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
www.vishay.com
6
Fig. 13b - Gate Charge Test Circuit
Document Number: 91071
S-81432-Rev. A, 07-Jul-08
IRF840S, SiHF840S
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
•
•
•
•
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91071.
Document Number: 91071
S-81432-Rev. A, 07-Jul-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1