VISHAY IRF9Z datasheet

IRF9Z24, SiHF9Z24
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt Rating
- 60
RDS(on) (Ω)
VGS = - 10 V
Qg (Max.) (nC)
19
Qgs (nC)
5.4
Qgd (nC)
11
Configuration
• Repetitive Avalanche Rated
0.28
Available
RoHS*
• P-Channel
• 175 °C Operating Temperature
COMPLIANT
• Fast Switching
• Ease of Paralleling
Single
• Simple Drive Requirements
S
• Lead (Pb)-free Available
TO-220
DESCRIPTION
G
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
G
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRF9Z24PbF
SiHF9Z24-E3
IRF9Z24
SiHF9Z24
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
VDS
VGS
Continuous Drain Current
VGS at - 10 V
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
TC = 25 °C
TC = 100 °C
ID
IDM
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
for 10 s
6-32 or M3 screw
LIMIT
- 60
± 20
- 11
- 7.7
- 44
0.40
240
- 11
6.0
60
- 4.5
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 2.3 mH, RG = 25 Ω, IAS = - 11 A (see fig. 12).
c. ISD ≤ - 11 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91090
S-Pending-Rev. A, 20-Jun-08
WORK-IN-PROGRESS
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IRF9Z24, SiHF9Z24
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
2.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 60
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.056
-
V/°C
VGS(th)
VDS = VGS, ID = - 250 µA
- 2.0
-
- 4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 60 V, VGS = 0 V
-
-
- 100
VDS = - 48 V, VGS = 0 V, TJ = 150 °C
-
-
- 500
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = - 6.6 Ab
VGS = - 10 V
VDS = - 25 V, ID = - 6.6 Ab
µA
-
-
0.28
Ω
1.4
-
-
S
-
570
-
-
360
-
-
65
-
-
-
19
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
5.4
Gate-Drain Charge
Qgd
-
-
11
Turn-On Delay Time
td(on)
-
13
-
tr
-
68
-
-
15
-
-
29
-
-
4.5
-
-
7.5
-
-
-
- 11
-
-
- 44
-
-
- 6.3
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 11 A, VDS = - 48 V,
see fig. 6 and 13b
VDD = - 30 V, ID = - 11 A,
RG = 18 Ω, RD = 2.5 Ω, see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 11 A, VGS = 0 Vb
TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/µsb
V
-
100
200
ns
-
0.32
0.64
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91090
S-Pending-Rev. A, 20-Jun-08
IRF9Z24, SiHF9Z24
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91090
S-Pending-Rev. A, 20-Jun-08
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IRF9Z24, SiHF9Z24
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91090
S-Pending-Rev. A, 20-Jun-08
IRF9Z24, SiHF9Z24
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+VDD
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
td(on)
td(off) tf
tr
VGS
10 %
90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary tp to obtain
required IAS
IAS
VDS
D.U.T
RG
VDS
+ V DD
VDD
IAS
tp
- 10 V
tp
0.01 Ω
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91090
S-Pending-Rev. A, 20-Jun-08
Fig. 12b - Unclamped Inductive Waveforms
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IRF9Z24, SiHF9Z24
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91090
S-Pending-Rev. A, 20-Jun-08
IRF9Z24, SiHF9Z24
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
+
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
+
- VDD
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
*
ISD
VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91090.
Document Number: 91090
S-Pending-Rev. A, 20-Jun-08
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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