IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.078 Qg (Max.) (nC) 350 Qgs (nC) 85 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current 180 Configuration Available Single • Low RDS(on) D • Lead (Pb)-free Available SUPER-247TM APPLICATIONS G • Switch Mode Power Supply (SMPS) S D G • Uninterruptible Power Supply • High Speed Power Switching S N-Channel MOSFET • Hard Switched and High Frequency Circuits ORDERING INFORMATION SUPER-247TM IRFPS43N50KPbF SiHFPS43N50K-E3 IRFPS43N50K SiHFPS43N50K Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID UNIT V 47 29 A IDM 190 4.3 W/°C Single Pulse Avalanche Energyb EAS 910 mJ Repetitive Avalanche Currenta IAR 47 A EAR 54 mJ PD 540 W dV/dt 9.0 V/ns TJ, Tstg - 55 to + 150 Linear Derating Factor Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s 300d °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 0.82 mH, RG = 25 Ω, IAS = 47 A (see fig. 12c). c. ISD ≤ 47 A, dI/dt ≤ 230 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91262 S-81367-Rev. B, 21-Jul-08 www.vishay.com 1 IRFPS43N50K, SiHFPS43N50K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.23 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.60 - V/°C VGS(th) VDS = VGS, ID = 250 µA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 50 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 28 Ab VGS = 10 V VDS = 50 V, ID = 28 A µA - 0.078 0.090 Ω 23 - - S - 8310 - - 960 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Effective Output Capacitance Coss Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Fall Time VGS = 0 V Coss eff. Total Gate Charge Turn-Off Delay Time VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 tr td(off) - 120 - VDS = 1.0 V, f = 1.0 MHz - 10170 - VDS = 400 V, f = 1.0 MHz - 240 - VDS = 0 V to 400 Vc - 440 - - - 350 ID = 47 A, VDS = 400 V, see fig. 6 and 13b - - 85 VGS = 10 V VDD = 250 V, ID = 47 A, RG = 1.0 Ω, see fig. 10b tf pF nC - - 180 - 25 - - 140 - - 55 - - 74 - - - 47 - - 190 - - 1.5 - 620 940 ns - 14 21 µC - 38 - A ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Body Diode Recovery Current Forward Turn-On Time IRRM ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 47 A, VGS = 0 Vb TJ = 25 °C, IF = 47 A, dI/dt = 100 A/µsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91262 S-81367-Rev. B, 21-Jul-08 IRFPS43N50K, SiHFPS43N50K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 1000 100 10 1 4.5V 0.1 20µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 10 TJ = 25 ° C 1 0.1 100 VDS , Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM4.5V I D , Drain-to-Source Current (A) 10 4.5V 1 20µs PULSE WIDTH TJ = 150 °C 0.1 0.1 1 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91262 S-81367-Rev. B, 21-Jul-08 4 5 6 7 8 9 10 11 12 Fig. 3 - Typical Transfer Characteristics TOP 100 V DS= 50V 20µs PULSE WIDTH VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 1000 TJ = 150° C 100 3.5 ID = 48A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFPS43N50K, SiHFPS43N50K Vishay Siliconix VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 100000 100 Coss = Cds + Cgd 10000 Ciss 1000 Coss 100 1000 ISD , Reverse Drain Current (A) 1000000 Crss 10 1 10 100 TJ = 150 ° C 10 TJ = 25 ° C 1 0.1 0.2 1000 1.7 2.2 Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 20 ID = 48A OPERATION IN THIS AREA LIMITED BY RDS(on) V DS= 400V V DS= 250V V DS= 100V ID , Drain Current (A) VGS , Gate-to-Source Voltage (V) 1.2 VSD ,Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage V GS = 0 V 0.7 15 100 10 10us 100us 10 1ms 5 0 0 50 100 150 200 250 300 350 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1 TC = 25 °C TJ = 150 °C Single Pulse 10 10ms 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91262 S-81367-Rev. B, 21-Jul-08 IRFPS43N50K, SiHFPS43N50K Vishay Siliconix RD VDS 50 VGS D.U.T. RG + - VDD ID , Drain Current (A) 40 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 30 Fig. 10a - Switching Time Test Circuit 20 VDS 90 % 10 0 25 50 75 100 125 10 % VGS 150 TC , Case Temperature ( °C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response(Z thJC ) 1 0.1 D = 0.50 0.20 0.10 0.05 0.01 PDM 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V tp L VDS D.U.T RG IAS 20 V tp Driver + A - VDD IAS 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91262 S-81367-Rev. B, 21-Jul-08 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFPS43N50K, SiHFPS43N50K Vishay Siliconix EAS , Single Pulse Avalanche Energy (mJ) 2000 ID 22A 30A 47A TOP BOTTOM 1500 1000 500 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91262 S-81367-Rev. B, 21-Jul-08 IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91262. Document Number: 91262 S-81367-Rev. B, 21-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
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