1. No category

IRLZ44, SiHLZ44
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt Rating
60 V
RDS(on) (Ω)
VGS = 5.0 V
Available
• Logic-Level Gate Drive
0.028
Qg (Max.) (nC)
66
• RDS(on) Specified at VGS = 4 V and 5 V
Qgs (nC)
12
• 175 °C Operating Temperature
Qgd (nC)
43
• Fast Switching
Configuration
RoHS*
COMPLIANT
• Ease of Paralleling
Single
• Simple Drive Requirements
D
TO-220
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
G
S
G
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRLZ44PbF
SiHLZ44-E3
IRLZ44
SiHLZ44
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Gate-Source Voltage
Continuous Drain Currente
Continuous Drain Current
Pulsed Drain
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
Currenta
SYMBOL
LIMIT
UNIT
VGS
± 10
V
ID
Maximum Power Dissipation
Peak Diode Recovery
TC = 25 °C
dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
Mounting Torque
for 10 s
6-32 or M3 screw
36
A
IDM
200
1.0
W/°C
EAS
400
mJ
PD
150
W
dV/dt
4.5
V/ns
TJ, Tstg
- 55 to + 175
Linear Derating Factor
Single Pulse Avalanche Energyb
50
300
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 179 µH, RG = 25 Ω IAS = 51 A (see fig. 12).
c. ISD ≤ 51 A, dV/dt ≤ 250 A/s, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Current limited by the package, (die current = 51 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91328
S-81274-Rev. A, 16-Jun-08
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IRLZ44, SiHLZ44
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = 250 µA
60
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.070
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
1.0
-
2.0
V
Gate-Source Leakage
IGSS
VGS = 10 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
-
-
25
VDS = 48 V, VGS = 0 V, TJ = 150 °C
-
-
250
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
VGS = 5.0 V
ID = 31 Ab
-
-
0.028
VGS = 4.0 V
ID = 25 Ab
-
-
0.039
23
-
-
-
3300
-
-
1200
-
-
200
-
-
-
66
-
-
12
VDS = 25 V, ID = 31 Ab
µA
Ω
S
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 5.0 V
ID = 51 A, VDS = 48 V,
see fig. 6 and 13b
Gate-Drain Charge
Qgd
-
-
43
Turn-On Delay Time
td(on)
-
17
-
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VDD = 30 V, ID = 51 A,
RG = 4.6 Ω, RD = 0.56 Ω, see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
230
-
-
42
-
-
110
-
-
4.5
-
-
7.5
-
-
-
50c
-
-
200
pF
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 51 A, VGS = 0 Vb
TJ = 25 °C, IF = 51 A, dI/dt = 100 A/µsb
-
-
2.5
V
-
130
180
ns
-
0.84
1.3
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Current limited by the package, (die current = 51 A).
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Document Number: 91328
S-81274-Rev. A, 16-Jun-08
IRLZ44, SiHLZ44
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Document Number: 91328
S-81274-Rev. A, 16-Jun-08
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRLZ44, SiHLZ44
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91328
S-81274-Rev. A, 16-Jun-08
IRLZ44, SiHLZ44
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
- VDD
5.0 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
L
Vary tp to obtain
required IAS
VDS
tp
VDD
D.U.T
RG
+
-
IAS
V DD
VDS
5.0 V
tp
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91328
S-81274-Rev. A, 16-Jun-08
IAS
Fig. 12b - Unclamped Inductive Waveforms
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IRLZ44, SiHLZ44
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
5.0 V
12 V
0.2 µF
0.3 µF
QGS
+
QGD
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
Fig. 13a - Basic Gate Charge Waveform
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IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Document Number: 91328
S-81274-Rev. A, 16-Jun-08
IRLZ44, SiHLZ44
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
•
•
•
•
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91328.
Document Number: 91328
S-81274-Rev. A, 16-Jun-08
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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