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Si4833DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
VDS (V)
rDS(on) ()
–30
ID (A)
0.085 @ VGS = –10 V
3.5
0.180 @ VGS = –4.5 V
2.5
VKA (V)
VF (V)
Diode Forward Voltage
IF (A)
30
0.5 V @ 1.0 A
1.4
SO-8
A
1
8
K
A
2
7
K
S
3
6
D
G
4
5
D
S
K
D
A
G
Top View
Parameter
Symbol
Limit
Drain-Source Voltage (MOSFET)
VDS
–30
Reverse Voltage (Schottky)
VKA
30
Gate-Source Voltage (MOSFET)
VGS
20
Continuous Drain Current (TJ = 150C)
150 C) (MOSFET)a, b
TA = 25C
TA = 70C
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)a, b
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)a, b
Maximum Power Dissipation (Schottky)a, b
TA = 25C
2.8
IDM
20
IS
– 1.7
IF
1.4
IFM
30
A
2
1.3
PD
W
1.9
TA = 70C
Operating Junction and Storage Temperature Range
V
3.5
ID
TA = 25C
TA = 70C
Unit
1.2
TJ, Tstg
C
–55 to 150
Parameter
Maximum Junction-to-Ambient (t 10 sec)a
Maximum Junction-to-Ambient (t = steady state)a
Device
Symbol
Typical
MOSFET
Schottky
Unit
62.5
Schottky
MOSFET
Maximum
65
RthJA
90
C/W
92
Notes
a. Surface Mounted on FR4 Board.
b. t 10 sec.
Document Number: 70796
S-56941—Rev. B, 02-Nov-98
www.vishay.com FaxBack 408-970-5600
2-1
Si4833DY
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = –250 mA
–1.0
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
Drain Source On-State
Drain-Source
On State Resistancea
Forward Transconductancea
Diode Forward Voltagea
ID(on)
rDS(on)
DS( )
V
VDS = 0 V, VGS = "20 V
"100
VDS = –30 V, VGS = 0 V
–1
VDS = –30 V, VGS = 0 V, TJ = 55C
–25
VDS w –5 V, VGS = –10 V
–15
nA
mA
A
VGS = –10 V, ID = –2.5 A
0.066
0.085
VGS = –4.5 V, ID = –1.8 A
0.125
0.180
gfs
VDS = –10 V, ID = –2.5 A
5.0
VSD
IS = –1.7 A, VGS = 0 V
–0.8
–1.2
8.7
15
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = –10
10 V
V, VGS = –10
10 V
V, ID = –2.5
25A
nC
C
1.9
Gate-Drain Charge
Qgd
1.3
Turn-On Delay Time
td(on)
7
15
tr
9
18
14
27
8
15
50
80
Typ
Max
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
VDD = –10
10 V
V,, RL = 10 W
ID ^ –1
1 A,
A VGEN = –10
10 V
V, RG = 6 W
IF = –1.7 A, di/dt = 100 A/ms
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Parameter
Forward Voltage Drop
Maximum
Reverse
Leakage
Current
M i
R
L k
C
Junction Capacitance
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Symbol
VF
Irm
CT
Test Condition
Min
IF = 1.0 A
0.45
0.5
IF = 1.0 A, TJ = 125C
0.36
0.42
Vr = 30 V
0.004
0.100
Unit
V
Vr = 30 V, TJ = 100C
0.7
10
Vr = –30 V, TJ = 125C
3.0
20
Vr = 10 V
62
mA
A
pF
Document Number: 70796
S-56941—Rev. B, 02-Nov-98
Si4833DY
Vishay Siliconix
Output Characteristics
Transfer Characteristics
20
20
VGS = 10, 9, 8, 7, 6 V
TC = –55C
25C
16
5V
I D – Drain Current (A)
I D – Drain Current (A)
16
12
8
4V
4
125C
12
8
4
3V
0
0
0
2
4
6
8
0
2
VDS – Drain-to-Source Voltage (V)
4
6
VGS – Gate-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
700
0.40
Ciss
0.32
C – Capacitance (pF)
r DS(on) – On-Resistance ( )
600
0.24
VGS = 4.5 V
0.16
VGS = 10 V
500
400
300
Coss
200
0.08
Crss
100
0
0
0
3
6
9
12
0
15
6
ID – Drain Current (A)
2.0
1.8
r DS(on) – On-Resistance ( )
(Normalized)
VDS = 10 V
ID = 2.5 A
8
12
18
24
30
VDS – Drain-to-Source Voltage (V)
Gate Charge
10
V GS – Gate-to-Source Voltage (V)
8
6
4
2
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 2.5 A
1.6
1.4
1.2
1.0
0.8
0.6
0
0
2
4
6
Qg – Total Gate Charge (nC)
Document Number: 70796
S-56941—Rev. B, 02-Nov-98
8
10
0.4
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
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Si4833DY
Vishay Siliconix
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
r DS(on) – On-Resistance ( W )
I S – Source Current (A)
20
10
TJ = 150C
TJ = 25C
0.4
0.3
0.2
ID = 2.5 A
0.1
0
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
VSD – Source-to-Drain Voltage (V)
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.8
35
ID = 250 mA
0.6
28
0.4
21
Power (W)
V GS(th) Variance (V)
2
0.2
14
0.0
7
–0.2
–0.4
–50
0
–25
0
25
50
75
100
125
150
0.01
1
0.1
TJ – Temperature (C)
10
30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90C/W
0.02
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
10–4
10–3
4. Surface Mounted
10–2
10–1
1
10
100
600
Square Wave Pulse Duration (sec)
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Document Number: 70796
S-56941—Rev. B, 02-Nov-98
Si4833DY
Vishay Siliconix
Reverse Current vs. Junction Temperature
Forward Voltage Drop
3
1
1
0.1
I F – Forward Current (A)
I R – Reverse Current (mA)
20
10
30 V
10 V
20 V
0.01
TJ = 150C
TJ = 25C
0.1
0.001
0.01
0.0001
0
25
50
75
100
125
150
0
TJ – Junction Temperature (C)
0.2
0.3
0.4
0.5
0.6
VF – Forward Voltage Drop (V)
Capacitance
250
CT – Junction Capacitance (pF)
0.1
200
150
100
50
0
0
4
8
12
16
20
VKA – Reverse Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 92C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
10–4
10–3
4. Surface Mounted
10–2
10–1
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 70796
S-56941—Rev. B, 02-Nov-98
www.vishay.com FaxBack 408-970-5600
2-5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1