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IRFR110, IRFU110, SiHFR110, SiHFU110
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt Rating
100
RDS(on) (Ω)
VGS = 10 V
Available
• Repetitive Avalanche Rated
0.54
Qg (Max.) (nC)
8.3
• Surface Mount (IRFR110/SiHFR110)
Qgs (nC)
2.3
• Straight Lead (IRFU110/SiHFU110)
Qgd (nC)
3.8
• Available in Tape and Reel
Configuration
Single
COMPLIANT
• Fast Switching
D
DPAK
(TO-252)
RoHS*
• Ease of Paralleling
• Lead (Pb)-free Available
IPAK
(TO-251)
DESCRIPTION
G
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
IRFR110PbF
IRFR110TRLPbFa
IRFR110TRPbFa
IRFR110TRRPbFa
IRFU110PbF
SiHFR110-E3
SiHFR110TL-E3a
SiHFR110T-E3a
SiHFR110TR-E3a
SiHFU110-E3
IRFR110
IRFR110TRLa
IRFR110TRa
-
IRFU110
SiHFR110
SiHFR110TLa
SiHFR110Ta
-
SiHFU110
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
Pulsed Drain
VGS at 10 V
TC = 25 °C
TC = 100 °C
Currenta
ID
IDM
UNIT
V
4.3
2.7
A
17
Linear Derating Factor
0.20
Linear Derating Factor (PCB Mount)e
0.020
W/°C
Single Pulse Avalanche Energyb
EAS
100
Repetitive Avalanche Currenta
IAR
4.3
A
Repetitive Avalanche Energya
EAR
2.5
mJ
Maximum Power Dissipation
TC = 25 °C
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
Peak Diode Recovery dV/dtc
PD
dV/dt
25
2.5
5.5
mJ
W
V/ns
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91265
S-81394-Rev. A, 21-Jul-08
www.vishay.com
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IRFR110, IRFU110, SiHFR110, SiHFU110
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Operating Junction and Storage Temperature Range
SYMBOL
LIMIT
TJ, Tstg
- 55 to + 150
UNIT
°C
260d
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 8.1 mH, RG = 25 Ω, IAS = 4.3 A (see fig. 12).
c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
THERMAL RESISTANCE RATINGS
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
PARAMETER
RthJA
-
110
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
-
50
Maximum Junction-to-Case (Drain)
RthJC
-
5.0
UNIT
°C/W
Note
a. When mounted on 1” square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = 250 µA
100
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.13
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
-
-
25
VDS = 80 V, VGS = 0 V, TJ = 125 °C
-
-
250
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = 2.6 Ab
VGS = 10 V
VDS = 50 V, ID = 2.6 A
µA
-
-
0.54
Ω
1.6
-
-
S
-
180
-
-
80
-
-
15
-
-
-
8.3
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
2.3
Gate-Drain Charge
Qgd
-
-
3.8
Turn-On Delay Time
td(on)
-
6.9
-
tr
-
16
-
-
15
-
-
9.4
-
-
4.5
-
-
7.5
-
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
ID = 5.6 A, VDS = 80 V,
see fig. 6 and 13b
VDD = 50 V, ID = 5.6 A,
RG = 24 Ω, RD = 8.4 Ω, see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
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VGS = 10 V
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
S
Document Number: 91265
S-81394-Rev. A, 21-Jul-08
IRFR110, IRFU110, SiHFR110, SiHFU110
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
-
-
4.3
-
-
17
-
-
2.5
UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 4.3 A, VGS = 0 Vb
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/µsb
V
-
100
200
ns
-
0.44
0.88
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 -Typical Output Characteristics, TC = 150 °C
Document Number: 91265
S-81394-Rev. A, 21-Jul-08
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFR110, IRFU110, SiHFR110, SiHFU110
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91265
S-81394-Rev. A, 21-Jul-08
IRFR110, IRFU110, SiHFR110, SiHFU110
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(on)
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
L
Vary tp to obtain
required IAS
VDS
tp
VDD
D.U.T.
RG
+
-
IAS
V DD
A
VDS
10 V
tp
0.01 Ω
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91265
S-81394-Rev. A, 21-Jul-08
Fig. 12b - Unclamped Inductive Waveforms
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IRFR110, IRFU110, SiHFR110, SiHFU110
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91265
S-81394-Rev. A, 21-Jul-08
IRFR110, IRFU110, SiHFR110, SiHFU110
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
+
• dV/dt controlled by R G
• ISD controlled by duty factor "D"
• D.U.T. - device under test
RG
Driver gate drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode
VDD
forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices and 3 V drive devices
Fig. 14 -For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91265.
Document Number: 91265
S-81394-Rev. A, 21-Jul-08
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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