1. No category

IRLZ14, SiHLZ14
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt Rating
60
RDS(on) (Ω)
VGS = 5.0 V
Available
• Logic-Level Gate Drive
0.20
Qg (Max.) (nC)
8.4
• RDS(on) Specified at VGS = 4 V and 5 V
Qgs (nC)
3.5
• 175 °C Operating Temperature
Qgd (nC)
6.0
Configuration
RoHS*
COMPLIANT
• Fast Switching
Single
• Ease of Paralleling
D
• Simple Drive Requirements
TO-220
• Lead (Pb)-free Available
DESCRIPTION
G
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
G
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRLZ14PbF
SiHLZ14-E3
IRLZ14
SiHLZ14
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 10
VGS at 5.0 V
Continuous Drain Current
TC = 25 °C
ID
TC = 100 °C
Pulsed Drain Currenta
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
TC = 25 °C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Mounting Torque
V
10
7.2
A
40
0.29
W/°C
68
mJ
PD
43
W
dV/dt
4.5
V/ns
TJ, Tstg
- 55 to + 175
Peak Diode Recovery dV/dtc
Soldering Recommendations (Peak Temperature)
UNIT
for 10 s
6-32 or M3 screw
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 793 µH, RG = 25 Ω, IAS = 10 A (see fig. 12).
c. ISD ≤ 10 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91325
S-Pending-Rev. A, 21-Jul-08
WORK-IN-PROGRESS
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IRLZ14, SiHLZ14
Vishay Siliconix
THERMAL RESISTANCE
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
Case-to-Sink, Flat, Greased Surface
RthCS
-
-
62
-
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
-
3.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
VDS
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
60
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.070
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
1.0
-
2.0
V
Gate-Source Leakage
IGSS
VGS = ± 10 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
-
-
25
VDS = 48 V, VGS = 0 V, TJ = 150 °C
-
-
250
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
VGS = 5.0 V
ID = 6.0 Ab
-
-
0.20
VGS = 4.0 V
ID = 5.0 Ab
-
-
0.28
3.5
-
-
-
400
-
-
170
-
-
42
-
VDS = 25 V, ID = 6.0 Ab
µA
Ω
S
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 5.0 V
ID = 10 A, VDS = 48 V
see fig. 6 and 13b
VDD = 30 V, ID = 10 A
RG = 12 Ω, RD= 2.8 Ω
see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
8.4
-
-
3.5
-
-
6.0
-
9.3
-
-
110
-
-
17
-
-
26
-
-
4.5
-
-
7.5
-
-
-
10
pF
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Currenta
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
-
-
40
TJ = 25 °C, IS = 10 A, VGS = 0 Vb
-
-
1.6
V
TJ = 25 °C, IF = 10 A,
dI/dt = 100 A/µsb
-
93
130
ns
-
0.34
0.65
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91325
S-Pending-Rev. A, 21-Jul-08
IRLZ14, SiHLZ14
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Document Number: 91325
S-Pending-Rev. A, 21-Jul-08
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRLZ14, SiHLZ14
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91325
S-Pending-Rev. A, 21-Jul-08
IRLZ14, SiHLZ14
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
- VDD
5.0 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91325
S-Pending-Rev. A, 21-Jul-08
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IRLZ14, SiHLZ14
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T.
RG
+
-
IAS
V DD
VDS
5.0 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
5.0 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91325
S-Pending-Rev. A, 21-Jul-08
IRLZ14, SiHLZ14
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
+
-
-
+
• dV/dt controlled by RG
• Driver same type as D.U.T.
RG
Driver gate drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode
VDD
forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91325.
Document Number: 91325
S-Pending-Rev. A, 21-Jul-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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