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IRFD9210, SiHFD9210
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt Rating
- 200
RDS(on) (Ω)
VGS = - 10 V
Qg (Max.) (nC)
8.9
Qgs (nC)
2.1
Qgd (nC)
3.9
Configuration
• Repetitive Avalanche Rated
3.0
RoHS*
• For Automatic Insertion
COMPLIANT
• End Stackable
• P-Channel
• Fast Switching
Single
• Ease of Paralleling
S
• Lead (Pb)-free Available
HEXDIP
DESCRIPTION
G
S
Available
The Power MOSFETs technology is the key to Vishay
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design archieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.
G
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
HEXDIP
IRFD9210PbF
SiHFD9210-E3
IRFD9210
SiHFD9210
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 200
Gate-Source Voltage
VGS
± 20
VGS at - 10 V
Continuous Drain Current
TC = 25 °C
ID
TC = 100 °C
Pulsed Drain Currenta
IDM
Linear Derating Factor
UNIT
V
- 0.40
- 0.25
A
- 3.2
0.0083
W/°C
Single Pulse Avalanche Energyb
EAS
210
mJ
Repetitive Avalanche Currenta
IAR
- 0.40
A
Repetitive Avalanche Energya
EAR
0.10
mJ
Maximum Power Dissipation
TC = 25 °C
PD
1.0
W
dV/dt
- 5.0
V/ns
TJ, Tstg
- 55 to + 150
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
300d
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 123 mH, RG = 25 Ω, IAS = - 1.6 A (see fig. 12).
c. ISD ≤ - 2.3 A, dI/dt ≤ 70 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91140
S-Pending-Rev. A, 23-Jun-08
WORK-IN-PROGRESS
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IRFD9210, SiHFD9210
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SYMBOL
TYP.
MAX.
UNIT
RthJA
-
120
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = - 250 µA
- 200
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.23
-
V/°C
VGS(th)
VDS = VGS, ID = - 250 µA
- 2.0
-
- 4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
Gate-Source Threshold Voltage
VDS = - 200 V, VGS = 0 V
-
-
- 100
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
-
-
- 500
µA
-
-
3.0
Ω
gfs
VDS = - 50 V, ID = - 0.24 A
0.27
-
-
S
Input Capacitance
Ciss
VGS = 0 V,
-
170
-
Output Capacitance
Coss
VDS = - 25 V,
-
54
-
f = 1.0 MHz, see fig. 5
-
16
-
-
-
8.9
-
-
2.1
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
ID = - 0.24 Ab
VGS = - 10 V
Dynamic
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = - 10 V
ID = - 4.0 A, VDS = - 80 V
see fig. 6 and 13b
pF
nC
Gate-Drain Charge
Qgd
-
-
3.9
Turn-On Delay Time
td(on)
-
8.0
-
-
12
-
-
11
-
-
13
-
-
4.0
-
-
6.0
-
-
-
- 0.40
-
-
- 3.2
-
-
- 5.8
-
110
220
ns
-
0.56
1.1
µC
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
VDD = - 100 V, ID = - 2.3 A
RG = 24 Ω, RD = 41 Ω,
see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 0.40 A, VGS = 0 Vb
TJ = 25 °C, IF = - 2.3 A, dI/dt = 100 A/µsb
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91140
S-Pending-Rev. A, 23-Jun-08
IRFD9210, SiHFD9210
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91140
S-Pending-Rev. A, 23-Jun-08
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFD9210, SiHFD9210
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91140
S-Pending-Rev. A, 23-Jun-08
IRFD9210, SiHFD9210
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+VDD
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
td(on)
td(off) tf
tr
VGS
10 %
90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IAS
L
Vary tp to obtain
required IAS
VDS
D.U.T.
RG
VDS
+ V DD
IAS
VDD
- 10 V
tp
0.01 Ω
tp
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91140
S-Pending-Rev. A, 23-Jun-08
Fig. 12b - Unclamped Inductive Waveforms
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IRFD9210, SiHFD9210
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91140
S-Pending-Rev. A, 23-Jun-08
IRFD9210, SiHFD9210
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
+
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
+
- VDD
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
*
ISD
VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91140.
Document Number: 91140
S-Pending-Rev. A, 23-Jun-08
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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