VISHAY IRF73 datasheet

IRF730A, SiHF730A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Low Gate Charge Qg results in Simple Drive
Requirement
400
RDS(on) (Ω)
VGS = 10 V
5.5
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Qg (Max.) (nC)
22
Qgs (nC)
5.8
Qgd (nC)
9.3
• Fully
Characterized
Capacitance
Avalanche Voltage and Current
Single
• Effective Coss Specified (See AN1001)
Configuration
Available
RoHS*
COMPLIANT
and
• Lead (Pb)-free Available
D
APPLICATIONS
TO-220
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
G
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
S
G
D
S
• Single Transistor Flyback Xfmr. Reset
N-Channel MOSFET
• Single Transistor Forward Xfmr. Reset
(Both US Line Input Only)
ORDERING INFORMATION
Package
TO-220
IRF730APbF
Lead (Pb)-free
SiHF730A-E3
IRF730A
SnPb
SiHF730A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
VGS
± 30
V
Gate-Source Voltage
VGS at 10 V
Continuous Drain Current
TC = 25 °C
ID
TC = 100 °C
Pulsed Drain Currenta
5.5
3.5
A
IDM
22
0.6
W/°C
Single Pulse Avalanche Energyb
EAS
290
mJ
Repetitive Avalanche Currenta
IAR
5.5
A
Repetitive Avalanche Energya
EAR
7.4
mJ
Linear Derating Factor
Maximum Power Dissipation
TC = 25 °C
PD
74
W
dV/dt
4.6
V/ns
TJ, Tstg
- 55 to + 150
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 19 mH, RG = 25 Ω, IAS = 5.5 A (see fig. 12).
c. ISD ≤ 5.5 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91045
S-Pending-Rev. A, 19-Jun-08
WORK-IN-PROGRESS
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IRF730A, SiHF730A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Case (Drain)
RthJC
-
1.70
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Ambient
RthJA
-
62
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
VDS
VGS = 0 V, ID = 250 µA
400
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.5
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.5
V
nA
IGSS
IDSS
RDS(on)
gfs
VGS = ± 30 V
-
-
± 100
VDS = 400 V, VGS = 0 V
-
-
25
VDS = 320 V, VGS = 0 V, TJ = 125 °C
-
-
250
-
-
1.0
Ω
VDS = 50 V, ID = 3.3 A
3.1
-
-
S
ID = 3.3 Ab
VGS = 10 V
µA
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
-
600
-
Output Capacitance
Coss
VDS = 25 V,
-
103
-
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
-
4.0
-
Output Capacitance
Coss
VDS = 1.0 V, f = 1.0 MHz
-
890
-
VDS = 320 V, f = 1.0 MHz
-
30
-
-
45
-
-
-
22
-
-
5.8
-
-
9.3
-
10
-
-
22
-
-
20
-
-
16
-
-
-
5.5
-
-
22
Effective Output Capacitance
Coss eff.
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
VGS = 0 V
tr
td(off)
VDS = 0 V to 320
VGS = 10 V
Vc
ID = 3.5 A, VDS = 320 V
see fig. 6 and 13b
VDD = 200 V, ID = 3.5 A
RG = 12 Ω, RD = 57 Ω,
see fig. 10b
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 5.5 A, VGS = 0
S
Vb
TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/µsb
-
-
1.6
V
-
370
550
ns
-
1.6
2.4
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. COSS eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
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Document Number: 91045
S-Pending-Rev. A, 19-Jun-08
IRF730A, SiHF730A
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
BOTTOM 4.5 V
10
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
0.1
10
TJ = 25 °C
1
4.5 V
VDS = 50 V
20 µs PULSE WIDTH
20 µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
0.1
4.0
100
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
100
2.5
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
BOTTOM 4.5 V
1
4.5 V
0.1
0.01
0.1
20 µs PULSE WIDTH
TJ = 25 °C
1
10
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Document Number: 91045
S-Pending-Rev. A, 19-Jun-08
100
RDS(on), Drain-to-Source On Resistance
(Normalized)
10
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
TOP
ID, Drain-to-Source Current (A)
TJ = 150 °C
ID = 5.5 A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10 V
0
20
40
60
80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRF730A, SiHF730A
Vishay Siliconix
100
VGS = 0 V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
1000
Ciss
Coss
100
10
ISD, Reverse Drain Current (A)
C, Capacitance (pF)
100000
TJ = 150 °C
10
TJ = 25 °C
1
Crss
1
1
10
100
0.1
0.4
1000
16
1.2
1.0
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
VDS = 320 V
VDS = 200 V
VDS = 80 V
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
ID = 5.5 A
0.6
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
VGS = 0 V
0.8
12
8
10 us
10
100 us
1 ms
1
10 ms
4
TC = 25 °C
TJ = 150 °C
Single Pulse
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
5
10
15
20
25
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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0.1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91045
S-Pending-Rev. A, 19-Jun-08
IRF730A, SiHF730A
Vishay Siliconix
RD
6.0
VDS
VGS
ID, Drain Current (A)
5.0
D.U.T.
RG
4.0
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
3.0
Fig. 10a - Switching Time Test Circuit
2.0
VDS
90 %
1.0
0.0
75
50
25
100
TC, Case Temperature
125
150
10 %
VGS
(°C)
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.001
0.0001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
L
VDS
D.U.T.
RG
IAS
20 V
tp
tp
Driver
+
A
- VDD
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91045
S-Pending-Rev. A, 19-Jun-08
IAS
Fig. 12b - Unclamped Inductive Waveforms
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IRF730A, SiHF730A
Vishay Siliconix
610
ID
2.5 A
3.5 A
BOTTOM 5.5 A
TOP
600
600
VDSav, Avalanche Voltage (V)
EAS, Single Pulse Avalanche Energy (mJ)
700
500
400
300
200
590
580
570
560
550
100
540
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
0.0
1.0
2.0
3.0
4.0
Iav, Avalanche Current (A)
5.0
6.0
Fig. 12d - Typical Drain Source Voltage
vs. Avalanche Current
Current regulator
Same type as D.U.T.
QG
10 V
50 kΩ
12 V
QGS
0.2 µF
0.3 µF
QGD
+
D.U.T.
-
VDS
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91045
S-Pending-Rev. A, 19-Jun-08
IRF730A, SiHF730A
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
•
•
•
•
RG
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode
VDD
forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91045.
Document Number: 91045
S-Pending-Rev. A, 19-Jun-08
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Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
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