VISHAY IRFB9 datasheet

IRFB9N65A, SiHFB9N65A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Low Gate Charge Qg Results in Simple Drive
Requirement
650
RDS(on) (Ω)
VGS = 10 V
0.93
Qg (Max.) (nC)
48
Qgs (nC)
12
Qgd (nC)
19
Configuration
Available
• Improved Gate, Avalanche and Dynamic dV/dt RoHS*
COMPLIANT
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
Single
• Lead (Pb)-free Available
D
APPLICATIONS
TO-220
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
G
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
S
G
D
S
• Single Transistor Flyback
N-Channel MOSFET
• Single Transistor Forward
ORDERING INFORMATION
Package
TO-220
IRFB9N65APbF
SiHFB9N65A-E3
IRFB9N65A
SiHFB9N65A
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
650
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
UNIT
V
8.5
5.4
A
IDM
21
1.3
W/°C
EAS
325
mJ
Currenta
IAR
5.2
A
Repetitive Avalanche Energya
EAR
16
mJ
PD
167
W
dV/dt
2.8
V/ns
TJ, Tstg
- 55 to + 150
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche
Maximum Power Dissipation
Peak Diode Recovery
TC = 25 °C
dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 5.2 A (see fig. 12).
c. ISD ≤ 5.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91104
S-81243-Rev. B, 21-Jul-08
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IRFB9N65A, SiHFB9N65A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
0.75
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
VDS
VGS = 0 V, ID = 250 µA
MIN.
TYP.
MAX.
UNIT
650
-
-
V
-
670
-
mV/°C
2.0
-
4.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
ΔVDS/TJ
VGS(th)
Reference to 25 °C, ID = 1
VDS = VGS, ID = 250 µA
VGS = ± 30 V
-
-
± 100
VDS = 650 V, VGS = 0 V
-
-
25
VDS = 520 V, VGS = 0 V, TJ = 125 °C
-
-
250
-
-
0.93
Ω
VDS = 50 V, ID = 3.1 A
3.9
-
-
S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
1417
-
-
177
-
-
7.0
-
VDS = 1.0 V, f = 1.0 MHz
-
1912
-
VDS = 520 V, f = 1.0 MHz
-
48
-
-
84
-
-
-
48
-
-
12
-
-
19
-
14
-
-
20
-
-
34
-
-
18
-
-
-
5.2
-
-
21
IGSS
IDSS
RDS(on)
gfs
mAd
ID = 5.1 Ab
VGS = 10 V
µA
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
Coss eff.
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
VGS = 0 V
tr
td(off)
VDS = 0 V to 520
VGS = 10 V
Vc
ID = 5.2 A, VDS = 400 V
see fig. 6 and 13b
VDD = 325 V, ID = 5.2 A
RG = 9.1 Ω,RD = 62 Ω,
see fig. 10b
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 5.2 A, VGS = 0
S
Vb
TJ = 25 °C, IF = 5.2 A, dI/dt = 100 A/µsb
-
-
1.5
V
-
493
739
ns
-
2.1
3.2
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
d. Uses SiHFIB5N65A data and test conditions.
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Document Number: 91104
S-81243-Rev. B, 21-Jul-08
IRFB9N65A, SiHFB9N65A
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
1
20µs PULSE WIDTH
4.5V TJ = 25 °C
0.1
0.1
1
10
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
4.0
100
Fig. 1 - Typical Output Characteristics
I D , Drain-to-Source Current (A)
10
4.5V
1
20µs PULSE WIDTH
TJ = 150 ° C
10
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Document Number: 91104
S-81243-Rev. B, 21-Jul-08
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
6.0
7.0
8.0
9.0
Fig. 3 - Typical Transfer Characteristics
TOP
0.1
5.0
VGS , Gate-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
100
V DS = 100V
20µs PULSE WIDTH
ID = 5.2A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFB9N65A, SiHFB9N65A
Vishay Siliconix
2000
ISD , Reverse Drain Current (A)
1600
C, Capacitance (pF)
100
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
1200
Coss
800
400
Crss
0
10
100
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
A
1
10
1000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
0.8
1.0
1.2
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
ID = 5.2A
OPERATION IN THIS AREA LIMITED
BY RDS(on)
VDS = 520V
VDS = 325V
VDS = 130V
16
10us
ID , Drain Current (A)
VGS , Gate-to-Source Voltage (V)
0.6
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
20
V GS = 0 V
0.4
12
8
10
100us
1ms
1
10ms
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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0.1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91104
S-81243-Rev. B, 21-Jul-08
IRFB9N65A, SiHFB9N65A
Vishay Siliconix
RD
VDS
10.0
VGS
D.U.T.
RG
+
ID , Drain Current (A)
8.0
- VDD
10V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
6.0
Fig. 10a - Switching Time Test Circuit
4.0
VDS
90 %
2.0
0.0
25
50
75
100
125
150
10 %
VGS
TC , Case Temperature ( ° C)
t d(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
tr
t d(off) t f
Fig. 10b - Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
t1
0.02
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.01
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V DS
tp
15 V
L
VDS
D.U.T.
RG
IAS
20 V
tp
Driver
+
A
- VDD
A
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91104
S-81243-Rev. B, 21-Jul-08
A
I AS
Fig. 12b - Unclamped Inductive Waveforms
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IRFB9N65A, SiHFB9N65A
EAS , Single Pulse Avalanche Energy (mJ)
Vishay Siliconix
800
TOP
BOTTOM
ID
2.3A
3.3A
5.2A
QG
600
10 V
QGS
400
Q GD
VG
Charge
200
Fig. 13a - Basic Gate Charge Waveform
0
25
50
75
100
125
150
Current regulator
Same type as D.U.T.
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
50 kΩ
12 V
0.2 µF
0.3 µF
800
V DSav , Avalanche Voltage (V)
D.U.T.
780
+
V
- DS
VGS
3 mA
760
IG
ID
Current sampling resistors
740
Fig. 13b - Gate Charge Test Circuit
720
700
A
0
1
2
3
4
5
6
I av , Avalanche Current (A)
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
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Document Number: 91104
S-81243-Rev. B, 21-Jul-08
IRFB9N65A, SiHFB9N65A
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
•
•
•
•
RG
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode
VDD
forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91104.
Document Number: 91104
S-81243-Rev. B, 21-Jul-08
www.vishay.com
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Document Number: 91000
Revision: 18-Jul-08
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