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IRFD014, SiHFD014
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt Rating
60
RDS(on) ()
VGS = 10 V
• For Automatic Insertion
0.20
Available
RoHS*
Qg (Max.) (nC)
11
• End Stackable
Qgs (nC)
3.1
• 175 °C Operating Temperature
5.8
• Fast Switching
Qgd (nC)
Configuration
Single
COMPLIANT
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
D
HVMDIP
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
G
S
G
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
HVMDIP
IRFD014PbF
SiHFD014-E3
IRFD014
SiHFD014
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
Pulsed Drain
VGS at 10 V
TA = 25 °C
TA = 100 °C
Currenta
ID
IDM
Linear Derating Factor
Single Pulse Avalanche
Energyb
Maximum Power Dissipation
EAS
TA = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
UNIT
V
1.7
1.2
A
14
0.0083
W/°C
130
mJ
PD
1.3
W
dV/dt
4.5
V/ns
TJ, Tstg
- 55 to + 175
300d
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 , IAS = 1.7 A (see fig. 12).
c. ISD  10 A, dI/dt  90 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91125
S10-2466-Rev. C, 25-Oct-10
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IRFD014, SiHFD014
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SYMBOL
TYP.
MAX.
UNIT
RthJA
-
120
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
60
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.063
-
V/°C
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
VDS = 60 V, VGS = 0 V
-
-
25
VDS = 48 V, VGS = 0 V, TJ = 150 °C
-
-
250
ID = 1.0 Ab
VGS = 10 V
VDS = 25 V, ID = 1.0 Ab
μA
-
-
0.20

0.96
-
-
S
-
310
-
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
160
-
-
37
-
-
-
11
-
-
3.1
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
-
5.8
Turn-On Delay Time
td(on)
-
10
-
tr
-
50
-
-
13
-
-
19
-
-
4.0
-
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
VGS = 10 V
ID = 10 A, VDS = 48 V
see fig. 6 and 13b
VDD = 30 V, ID = 10 A
Rg = 24 , RD = 2.7 , see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
-
6.0
-
-
-
1.7
-
-
14
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb
-
-
1.6
V
-
70
140
ns
-
0.20
0.40
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
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Document Number: 91125
S10-2466-Rev. C, 25-Oct-10
IRFD014, SiHFD014
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TA = 25 °C
Fig. 1 - Typical Output Characteristics, TA = 25 °C
Fig. 3 - Typical Transfer Characteristics
TA = 175 °C
Fig. 2 - Typical Output Characteristics, TA = 175 °C
Document Number: 91125
S10-2466-Rev. C, 25-Oct-10
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFD014, SiHFD014
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
TA = 25 °C
TJ = 175 °C
SINGLE PULSE
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 8 - Maximum Safe Operating Area
Document Number: 91125
S10-2466-Rev. C, 25-Oct-10
IRFD014, SiHFD014
Vishay Siliconix
RD
VDS
VGS
D.U.T.
ID, Drain Current (A)
Rg
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
TA, Ambient Temperature (°C)
td(on)
td(off) tf
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJA)
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
tr
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Document Number: 91125
S10-2466-Rev. C, 25-Oct-10
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IRFD014, SiHFD014
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T
Rg
+
-
IAS
V DD
VDS
10 V
0.01 W
tp
Fig. 12a - Unclamped Inductive Test Circuit
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91125
S10-2466-Rev. C, 25-Oct-10
IRFD014, SiHFD014
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91128.
Document Number: 91125
S10-2466-Rev. C, 25-Oct-10
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7
Package Information
Vishay Siliconix
HVM DIP (High voltage)
0.248 [6.29]
0.240 [6.10]
0.043 [1.09]
0.035 [0.89]
0.197 [5.00]
0.189 [4.80]
0.133 [3.37]
0.125 [3.18]
0.180 [4.57]
0.160 [4.06]
0.094 [2.38]
0.086 [2.18]
A
L
0.160 [4.06]
0.140 [3.56]
0° to 15°
2x
0.017 [0.43]
0.013 [0.33]
0.045 [1.14]
2 x 0.035 [0.89]
E min.
0.024 [0.60]
4x
0.020 [0.51]
0.100 [2.54] typ.
E max.
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
A
0.310
0.330
7.87
MAX.
8.38
E
0.300
0.425
7.62
10.79
L
0.270
0.290
6.86
7.36
ECN: X10-0386-Rev. B, 06-Sep-10
DWG: 5974
Note
1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.
Document Number: 91361
Revision: 06-Sep-10
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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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